Abstract
Memristor effect in ZnO thin films was investigated. It was shown, that increase in the number of laser pulses during the formation of a thin ZnO film from 1000 to 3000 leads to increase resistance of ZnO film in the high resistance state (HRS) from 28.31±8.27 kΩ to 1943.53±123.11 kΩ and decrease resistance of ZnO film in the low resistance state (LRS) from 3.85±2.15 kΩ to 3.22±1.32 kΩ, respectively. Memristor structure fabrication technique was developed. Al2O3/TiN/ZnO/Ti memristor structure was fabricated and investigated. Resistive switching from HRS to LRS occurred at 0.4±0.1 V, and from LRS to HRS at -0.72±0.2 V. Endurance test shown that HRS is 72.41±6.22 kΩ, LRS is 1.05±0.32 kΩ. It was shown, that HRS/LRS ratio was about 69.7 at read voltage 0.3 V. As a result, Al2O3/TiN/ZnO/Ti memristor structure fabrication allowed to decrease switching voltage from 3.2±0.6 V to 0.4±0.1 V for SET, and from -3.5±1.1 V to -0.72±0.2 V for RESET, decrease current from 0.9±0.4 mA to 5.2±2.2 μA, and get less resistance dispersion, than Al2O3/TiN/ZnO structure.
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