Abstract
In this research, we study the dependence of the shift of the ferromagnetic resonance line in layered structures based on yttrium iron garnet (YIG) on a gadolinium gallium garnet (GGG) substrate, on the magnitude of the external electric field and on the parameters of various piezoelectrics (plumbum zirconate titanate (PZT), Langasite)). The intense development of modern microwave technology leads to the study and creation of new layered structures of materials with different physical properties that can be combined: magnetic and ferroelectric, magnetic and semiconductor, etc. As a result of the study, we obtained the dependences of the shifts of the ferromagnetic resonance line on the parameters of piezoelectrics (mainly, on the magnitude of the dielectric constant) in the layered structures YIG-GGGPZT, YIG-GGG-Langasite. The obtained results show that the ferromagnetic resonance line shift effect can be used to develop new controllable microwave devices, the operating principle of which is based on the electronic tuning of resonance characteristics by means of an electric field and the choice of the type of piezoelectric.
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