Abstract
The paper considers a method for determining the diffusion lengths of non-basic charge carriers based on the analysis of the spectral characteristics of a planar electron-hole transition. The thickness of the illuminated area was reduced by chemical etching. By changing the signal for radiation in the region of strong absorption, the effective length of the tightening of non-basic charge carriers was determined. With removal of layers, a change in the electrical conductivity of the illuminated area was recorded. This made it possible to construct the doping profile and determine the intensity of the built-in electric field. The obtained results made it possible to calculate the diffusion length of the non-basic charge carriers. An example of implementation of the described method for an InSb-based photodiode is given. The proposed technique can be effectively used to determine small values of diffusion lengths of inhomogeneously alloyed layers.
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