ZnS Layer Research Articles

Elucidating Mechanistic Details of Photo-Induced Charge Transfer in Antimony Sulfide-Based p-i-n Junctions

The initial kinetics and mechanisms of photo-induced charge transfer in photovoltaic materials are critical to the operation of fabricated devices. Despite the importance of charge transfer in the picosecond to nanosecond timescales, mechanistic understanding of these events is still limited. To address this challenge, a series of p-i-n junction samples that comprises fluorine-doped tin oxide (FTO)/TiO2/ZnS/Sb2S3/P3HT layers was prepared by atomic layer deposition (ALD). ALD allows for carefully controlled film thickness in samples that enable systematic evaluation of photo-induced charge-transfer kinetics by transient absorption spectroscopy (TAS). Sb2S3 serves as the intrinsic light absorber, P3HT is the hole acceptor, and TiO2 is the electron acceptor. An extremely thin, electron-blocking layer of ZnS was deposited between Sb2S3 and TiO2 varied in thickness by ALD to create a series of 20 samples that included (1) five different ZnS thicknesses (0, 2, 5, 10, and 15 ALD cycles) and (2) four combinations of layers, always including ZnS/Sb2S3, that built up to the completed stack. These mechanistic studies confirm our proposed mechanism for photo-induced electron and hole transfer and recombination in these p-i-n junction samples and provide predictive insights into the charge-transfer processes that may be most determinant in the operation of completed devices.

A comprehensive study of the light soaking effect in ZnS/p-Si heterojunction solar cells

An innovative dopant-free ZnS/p-Si heterojunction solar cell features hole selective WO3 contact were fabricated by thermal evaporation at room temperature. Light soaking effect was observed in the ZnS/p-Si heterojunction solar cells for the first time. The device performance is found to increase with the increasing light soaking times and finally reaches saturation. Besides, when the illumination stops, the power conversion efficiency (PCE) would decrease slightly. Device performance under different light soaking time and preservation time in the dark were investigated. Moreover, different monochromatic illuminations were conducted to further specify the active layer that is responsible for the light soaking effect. The result shows the ZnS layer and the short-wavelength light absorbed in ZnS layer are supposed to be the main reason for the effect. Based on these results, a model was proposed from the point of view of defect states variation in the energy band of ZnS to explain the effect. At last, Deep Level Transient Spectroscopy (DLTS) measurements with different monochromatic illumination were conducted to further verify the proposed model.

Optical properties upon ZnS film thickness in ZnS/ITO/glass multilayer films by ellipsometric and spectrophotometric investigations for solar cell and optoelectronic applications

ZnS film with various thicknesses (d ≈ 100–350 nm) deposited on the ITO coated glass substrate (ZnS/ITO/glass) by an electron beam evaporation process was examined structurally and optically. Different techniques were used to specify and analyze the optical characteristics of the film, such as spectroscopic ellipsometric (SE) and spectrophotometric (SP). The ZnS/ITO/glass films exhibit a wurtzite hexagonal type structure entrenched in the crystalline background of ITO film. XRD analysis revealed changes in structural and microstructural parameters, such as a decrease in lattice parameters, a reduction in microstrain, and a raise in crystallite size. The optical constants and the optical energy gap were extracted from SE by constructing an ellipsometric optical model, while the optical constants were calculated from SP by using Murmann's exact equations. It was seen that the overall behaviour of the refractive index n of the ZnS/ITO/glass films obtained from SE and SP increases with an increase in ZnS layer thickness, which is attributed to the increment of the size of the grain. It was additionally found that, the overall behaviour of the extinction coefficient k of the ZnS/ITO/glass films increases, when the thickness of the ZnS layer increments. Also, the direct optical transition was observed with energy band gap diminishes from 3.423 (d = 100 nm) eV to 3.287 eV (d = 350 nm) that is because of the rise in grain size, the decrease in microstrain, and reduction in lattice constants. Furthermore, it was found that the deposition of ZnS on ITO coated glass substrate increases the absorption compared with the ZnS/glass film and then reduces the transmittance and energy band gap. It was concluded that as the ZnS thickness increases, the optical constants of ZnS/ITO/glass films enhance. Finally, the overall behaviour of the optical constants within the experimental error range of the ZnS/ITO/glass films with different ZnS layer thicknesses obtained by SE was found to be consistent with that calculated from SP measurement. • Synthesis of various thicknesses (d ≈ 100–350 nm) of (ZnS/ITO/glass) via electron beam evaporation. • Investigation of the effects of film thickness on the optical and structural properties of (ZnS/ITO/glass). • The increase in ZnS thickness led to enhance the optical constants of ZnS/ITO/glass films.

Cadmium-Free and Efficient Type-II InP/ZnO/ZnS Quantum Dots and Their Application for LEDs.

It is a generally accepted perspective that type-II nanocrystal quantum dots (QDs) have low quantum yield due to the separation of the electron and hole wavefunctions. Recently, high quantum yield levels were reported for cadmium-based type-II QDs. Hence, the quest for finding non-toxic and efficient type-II QDs is continuing. Herein, we demonstrate environmentally benign type-II InP/ZnO/ZnS core/shell/shell QDs that reach a high quantum yield of ∼91%. For this, ZnO layer was grown on core InP QDs by thermal decomposition, which was followed by a ZnS layer via successive ionic layer adsorption. The small-angle X-ray scattering shows that spherical InP core and InP/ZnO core/shell QDs turn into elliptical particles with the growth of the ZnS shell. To conserve the quantum efficiency of QDs in device architectures, InP/ZnO/ZnS QDs were integrated in the liquid state on blue light-emitting diodes (LEDs) as down-converters that led to an external quantum efficiency of 9.4% and a power conversion efficiency of 6.8%, respectively, which is the most efficient QD-LED using type-II QDs. This study pointed out that cadmium-free type-II QDs can reach high efficiency levels, which can stimulate novel forms of devices and nanomaterials for bioimaging, display, and lighting.

Growth of Cu2ZnSnS4 thin films by hybrid chemical approach

Thin films of Cu2ZnSnS4 (CZTS), an emerging solar cell absorber layer, were prepared by a hybrid chemical process followed by annealing. In this process, two binary layers, SnS and ZnS were grown sequentially using chemical bath deposition method (CBD) onto soda-lime glass substrates. Subsequently the ZnS layer was partly converted into CuxS layer through an ion-exchange process by immersing the stack glass/SnS/ZnS in CuCl2 solution. The resulting stack, namely glass/SnS/ZnS/CuS, was annealed in sulphur atmosphere at 450 °C for an hour to promote inter-diffusion of the layers leading to the formation of CZTS film through the solid-state reaction path. The stack with a ZnS layer of 470 nm thick and 270 nm thick SnS led finally to the desired CZTS phase formation. XRD analysis of these films showed CZTS peaks which are close to the Cu2SnS3 (CTS) phase. Raman spectra recorded to distinguish CTS and CZTS phases showed modes at 291, 338 cm−1 corresponding to CZTS phase confirming its formation. The band gap of CZTS films is found to be 1.42 eV. The films were found to be p-type in nature. An attempt is made to fabricate heterojunction solar cell.

Improving the Cu2ZnSn(S,Se)4-Based Photovoltaic Conversion Efficiency by Back-Contact Modification

Back-contact modification using a 10-nm ZnS layer in CZTSSe-based solar cell can play a crucial role in improving photovoltaic conversion efficiency. An ultrathin layer of ZnS is deposited over Mo-coated soda lime glass substrate before depositing CZTSSe using sputtering. The crystal structure of deposited CZTSSe thin films over ZnS is recognized as (112)-oriented, polycrystalline in nature, and free from the presence of any secondary phases such as Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (S,Se) or Zn(S,Se). The bandgap of CZTSSe thin films deposited over ultrathin ZnS is observed to increase from 1.49 (deposited over Mo directly) to 1.58 eV at room temperature, as determined by spectroscopic ellipsometry. In addition, numerical simulation has been performed using SCAPS software. The impact of ZnS layer has been simulated by using the defects in the absorber and at the interface of ZnS/CZTSSe. The simulated results have been validated with experimentally fabricated CZTSSe device. Simulated device with ZnS intermediate layer is observed to give rise to a photovoltaic conversion efficiency of 15.2%.

Ternary alloyed CdS1−xSex quantum dots on TiO2/ZnS electrodes for quantum dots-sensitized solar cells

Ternary alloyed and tunable band CdS1−xSex quantum dots (QDs) were prepared via successive ionic layer absorption and reaction (SILAR) method. The as-prepared photoanodes at different concentrations were characterized for structural, surface morphological, optical and electrical analysis. The result indicated that the photoresponse region and energy band of prepared CdS1−xSexQDs could be varied by controlling the ratios of S and Se. An aqueous solution of polysulfide electrolyte acted as redox mediator. The QDs size were varied from 10.14 nm to 3.362 nm confirms the quantum confinement effect. The highest and lowest photo conversion efficiency (η) of TiO2/ZnS/CdS1−xSex/ZnS quantum dots-sensitized solar cells (QDSSCs) using CuS counter electrode was obtained 5.12% and 3.43%, respectively. Developing the ZnS layer between the TiO2/QDs and at the interface of QD/electrolyte helps to suppress the charge recombination rate and provide the potential barrier between QDs and electrolyte.The photoconversion efficiency was evaluated by using a solar simulator under illumination with an AM 1.5 G spectrum having light intensity of 100 mWcm−2. These results are encouraging and reveals that tunable energy band QDs controlled by the ratio of atoms can contribute an effective approach for developing the higher efficiency of QDSSCs.

Effects of PbS quantum dots layer and different light scattering films on the photovoltaic performance of double passivated PbS, CdS and CdSe quantum dots sensitized solar cells

In this research, two novel multi-layer photoelectrodes were fabricated and applied in quantum dot sensitized solar cells (QDSCs). The double layer scaffolds were composed of a TiO2 nanocrystalline sub-layer covered with an over-grown TiO2 nanorods (NRs) or ex-synthesized TiO2 hollow spheres (HSs) film. The light sensitization was carried out by deposition of separated PbS, CdS and CdSe quantum dots (QDs) layers. Finally, two electron blocking/passivating films of ZnS and SiO2 were formed for better photovoltaic (PV) performance. The syntheses of TiO2 nanocrystals (NCs), HSs and NRs were performed and tuned through different hydrothermal methods. The depositions of the PbS, CdS and ZnS layers were carried out by conventional successive ionic layer adsorption and reaction (SILAR) process. The CdSe and SiO2 films were also formed using a modified, effective chemical bath deposition (CBD) and sol–gel techniques, respectively. The PbS sensitizing film was additionally utilized for higher PV efficiency and the number of deposition cycles(X) was altered for the purpose of optimization. For the cell with novel TiO2NCs/TiO2NRs/PbS(X)/CdS/CdSe/ZnS/SiO2, X = 0–3, photoanode, the highest efficiency was about 5.5% and achieved for X = 2. This power conversion efficiency (PCE) was enhanced about 28% compared to that of the PbS free photoelectrode. The other improved TiO2 NCs/TiO2HSs/PbS(X)/CdS/CdSe/ZnS/SiO2, X = 0–3, photoanode was also utilized with a light scattering HSs film. The maximum efficiency was achieved about 6.5% for the extra PbS(2) sensitizing layer. This PCE was increased about 20% compared to the PbS free photoelectrode and 51% compared to that of the QDSC with the PbS free, NRs included photoanode. The highest efficiency was attributed to the co-sensitization and optimized PbS sensitizing layer together with the effective light scattering and utilization of double passivating layers.

Enhanced light absorption and charge recombination control in quantum dot sensitized solar cells using copper and manganese doped cadmium sulfide quantum dots

AbstractIn this work, photovoltaic devices with CdSe QDs‐photoanodes doped Cu and Mn metals using the Successive ionic layer adsorption and reaction method for high‐efficiency performance. Here, the molar dopant of Cu was studied from 0% to 5%, while Mn molar was changed between 0% and 40% to optimize conditional experiment. This result shows an increase of current density in both CdSe doped on Cu and Mn as a result of the enhancing light absorption and reducing recombination when a ZnS layer was used as passivation. In fact, a high 4.24% of efficiency for CdSe doped on Cu and 3.9% of efficiency for CdSe doped on Mn were archived comparing with pure CdSe QDs.

High-efficient and reversible temperature sensor fabricated from highly luminescent CdTe/ZnS-SiO2 nanocomposites for rolling bearings

CdTe quantum dots (QDs) have broad application prospects in the field of thermal monitoring of bearing rotating components owing to the linear temperature dependence of their photoluminescence. However, their practical application can be limited by irreversible thermal stability. In this work, we synthesized CdTe/ZnS-SiO2 nanocomposites by a reversed-phase microemulsion method based on CdTe QDs prepared in an aqueous phase. The structure and optical performance of as-synthesized CdTe/ZnS-SiO2 were characterized. CdTe/ZnS-SiO2 shows high photoluminescence, outstanding reversible thermal stability, and low biotoxicity because of the elimination of surface defects on the QDs by the ZnS layer and inorganic protection by the SiO2 layer. The photoluminescence spectra of CdTe/ZnS-SiO2 show linear relationship and reversible thermal stability during heating and cooling cycle processes from room temperature to 80 °C, which facilitates their practical application as temperature sensors. The highly efficient and reversible temperature sensor fabricated from highly luminescent CdTe/ZnS-SiO2 nanocomposites has significant application value in the thermal monitoring field, especially for high-speed bearings under various conditions.

Fabrication of quantum dot-sensitized solar cells with multilayer TiO2/PbS(X)/CdS/CdSe/ZnS/SiO2 photoanode and optimization of the PbS nanocrystalline layer

In this work, two multilayer photoanode structures of TiO2/PbS(X)/CdS/ZnS/SiO2 and TiO2/PbS(X)/CdS/CdSe/ZnS/SiO2 were fabricated and applied in quantum dot-sensitized solar cells (QDSCs). Then, the effect of PbS QDs layer on the photovoltaic performance of corresponding cells was investigated. The sensitization was carried out by PbS and CdS QDs layers deposited on TiO2 scaffold through successive ionic layer adsorption and reaction (SILAR) method. The CdSe QDs film was also formed by a fast, modified chemical bath deposition (CBD) approach. Two passivating ZnS and SiO2 layers were finally deposited by SILAR and CBD methods, respectively. It was shown that the reference cell with TiO2/CdS/ZnS/SiO2 photoanode demonstrated a power conversion efficiency (PCE) of 3.0%. This efficiency was increased to 4.0% for the QDSC with TiO2/PbS(2)/CdS/ZnS/SiO2 photoelectrode. This was due to the co-absorption of incident light by low-bandgap PbS nanocrystalline film and also the CdS QDs layer and well transport of the charge carriers. For the CdSe included QDSCs, the PbS-free reference cell represented a PCE of 4.1%. This efficiency was improved to 5.1% for the optimized cell with TiO2/PbS(2)/CdS/CdSe/ZnS/SiO2 photoelectrode. The maximized efficiency was enhanced about 25% and 70% compared to the PbS-free reference cells with and without the CdSe QDs layer.

The electrical properties of n-CdS/p-CdTe and n-ZnS/p-CdTe heterojunctions fabricated by a combination of SILAR and vacuum deposition techniques

The paper reports successful fabrication of CdS/CdTe and ZnS/CdTe heterojunctions by a combination of two different deposition techniques viz. successive ionic layer adsorption and reaction (SILAR) and conventional vacuum deposition. The SILAR deposited CdS and ZnS layers formed well adherent and stable heterojunctions with the vacuum deposited CdTe. The electrical characteristics of the heterojunctions were analyzed by thermionic emission model and Cheung's model. The ideality factor, series resistance, barrier height, space charge density and thickness of the depletion region were determined by rigorous I–V, J-V and C–V characterization. The barrier heights of the devices were found to be in the range of 0.8 eV–0.9 eV. The thickness of the depletion region was found to be 5.2 nm and 7.1 nm while the space charge density was found to be 3.6 × 1022 m−3 and 1.59 × 1021 m-3, respectively, for CdS/CdTe and ZnS/CdTe heterojunctions.

Fabrication of Cu-rich CZTS thin films by two-stage process: Effect of gas flow-rate in sulfurization process

In this study, CZTS thin films were prepared using a two-stage process consisting of sputter deposition of Cu, Sn and ZnS layers on the glass substrates to form CuSn/ZnS/Cu stacked precursor films followed by sulfurization process under various flow-rate (0, 20, 40, 60, 80, 100 sccm) of Ar+H2 mix gas in a tubular furnace. The EDX measurements of the precursor and reacted films are Cu-rich and Zn-rich composition. However, Zn and Sn loss was observed for samples annealed under the flow-rate of gas above the 60 sccm. The XRD pattern of the samples showed diffraction peaks of pure kesterite CZTS structure and the FWHM values extracted from their XRD patterns and W-H plot calculations demonstrated that CZTS-40 thin film had a more desired crystallite size. The Raman spectra of the samples confirmed the formation of CZTS phase for all samples and indicated the formation of some secondary phases such as Cu2SnS3, SnS2, Sn2S3 except for CZTS-40 thin film. All the samples displayed dense and polycrystalline microstructure according to their SEM images. The optical band gap values of CZTS samples showed variation between 1.40 and 1.48 eV. The room-temperature PL spectra of the samples revealed a broad band that had a peak value at around 1.36–1.40 eV that are close to the optical band gap values for prepared CZTS samples.

ZnS/CdSe0.2S0.8/ZnSSe heterostructure as a novel and efficient photosensitizer for highly efficient quantum dot sensitized solar cells

Herein, we systematically studied the influence of ZnS, ZnSe and ZnSxSe1-x, with S:Se molar ratio of 1:4, layers as both inner and outer layers on photovoltaic properties of QDSSCs based on CdSexS1-x QDs when the molar ratio of S:Se is 4:1. The results show that ZnS and ZnS0.2Se0.8 layers are the best choice for the CdSe0.2S0.8-based QDSSCs as an inner and outer layer, respectively. Hence, we successfully designed and fabrication of QDSSCs based on ZnS/CdSe0.2S0.8/ZnS0.2Se0.8 photosensitizer with a high efficiency of 6.31%, which is almost more than double the efficiency of 3% for bare CdSe0.2S0.8-based QDSSCs. Our results indicated that in this heterostructure structure the ZnS layer acts as both a seed layer and a blocking layer, which leads to an increase in the light harvesting efficiency and a decrease in the interfacial charge recombination. On the other hand, the ZnS0.2Se0.8 layer acts as an effective passivation layer which not only reduces the charge recombination process, but also improves the light absorption range. Therefore, when both of these layers were employed in the CdSe0.2S0.8 QDSSCs, the electron lifetime and thereby the accumulation of photo-injected electrons in the TiO2 film greatly improved and reached to 104 ms and 1.21E + 18 cm3, respectively.

Effect of pH and Polyelectrolytes on the Spectral-Kinetic Properties of AIS/ZnS Semiconductor Quantum Dots in Aqueous Solutions

In aqueous solutions the spectral-kinetic parameters of quantum dots (QD) based on a mixture of semiconductors of groups I–III–VI, namely Ag–In–S and Ag–In–S2, with a layer of ZnS (AIS/ZnS QD), show a specific dependence on pH and on the local polarity caused by interaction with polyelectrolytes (spectral shifts, hyperchromism, and hypochromism in the absorption and photoluminescence spectra, changes of the average photoluminescence life time). It was found that the change in the properties of the AIS/ZnS QDs with variation of the pH of the solution is caused by reversible recharging of ampholyte ion groups, which alters the structure of the Helmholtz double layer at the surface of the QD covered by glutathione molecules. It was shown that the second derivative of the QD absorption spectra both in an acidic medium and during interaction with polyelectrolytes corresponds to a linear Stark effect due to the formation of an induced dipole moment in the QD. The obtained results can be used to develop selective markers based on AIS/ZnS QDs for testing local pH and polarity in biomedicine.

Study of structural, optical and morphological properties of ZnO/ZnS hetrostructures deposited by spray pyrolysis method

We have prepared ZnO/ZnS multi-layer thin films as a hetero-nanocomposite structure by the spray pyrolysis method. The crystalline structure of both ZnS/ZnO core-shell and ZnO/ZnS/ZnO films deposited on a heated glass substrate located on a hot plate at 450 °C was analyzed by X-ray diffraction, field emission scanning electron microscopy, photoluminescence (PL) and UV–Vis spectroscopy. The diffractogram shows that a new hydroxide phase; simonkolleite (Zn5(OH)8Cl2·H2O) is also formed due to the thermal decomposition of ZnS precursor during the deposition heating process. photocatalytic activities of simonkolleite nanostructures is one of its interesting properties in optical applications. Morphology investigation of the prepared nanocomposite revealed the formation of randomly arranged nanoplates. Changes in the absorption edge of ZnO, as well as the reduction in bandgap of the prepared multilayers samples compared to ZnS monolayer, are also discussed. PL intensity ratio of two well-known blue and green emission of ZnO in the multi-layer films show a significantly changed due to the passivation effect of the core/shell structure. We have also discussed the origin of the emission bands affected by surface defects in the interface between ZnO and ZnS layers.

Фотолюминесценция низкоразмерных композитных структур полиметилметакрилат/(Zn,Cd,Mn,Eu)S

A colloidal technology for the synthesis and doping of low-dimensional structures based on zinc and cadmium sulfides directly in the medium of an acrylic monomer is implemented in the process of obtaining optically transparent compositions of polymethylmethacrylate/(Zn,Cd,Mn,Eu)S. It is shown that the photoluminescence of the compositions is associated with a system of levels of structural defects of semiconductor particles located in its band gap, which are formed during successive doping of ZnS and CdS layers with Mn2+ and Eu3+ ions, and with intraband 5D0 → 7F1,2,4 transitions of 4f-electrons of Eu3+ ions. Photoluminescence excitation it occurs as a result of the transition of electrons from the valence band of a semiconductor to the levels of defects in its structure and partial energy transfer to the excited energy levels of Eu3+ ions.

Tunable luminescence of Cu-In-S/ZnS quantum dots-polysaccharide nanohybrids by environmentally friendly synthesis for potential solar energy photoconversion applications

Colloidal semiconductor nanomaterials (QDs) have been systematically investigated as innovative alternatives for green energy production through solar photoconversion devices. Thus, we developed novel fluorescent QD nanostructures based on Cu-In-S (CIS) quantum dot core and ZnS layer (ZCIS) stabilized with carboxymethyl cellulose (CMC) biopolymer ligand for potential applications in solar energy photoconversion. The physicochemical, optical, morphological, and surface properties of the nanostructures were comprehensively characterized by TEM-EDX, AFM, SAED, XPS, XRD, FTIR, DLS, and zeta potential analyses. The results demonstrated that monodispersed CIS QDs (size 3.5 nm) were produced with adjustable emission properties spanning from visible to NIR by altering the concentrations of metallic cations and sulfides. Moreover, the quantum yield presented a drastic enhancement of over 1500% due to the amalgamation of chemical composition and the passivation of surface defects by the formation of quaternary nanostructures (ZCIS). As a proof of concept, a solid-liquid junction solar cell was built based on the photoanode composed of TiO2 sensitized by ZCIS-CMC nanohybrids, which proved photoelectrochemical activity upon visible light irradiation. Thus, these nanohybrids produced strictly via green chemistry colloidal process can be envisioned as promising candidates for the development of solar cells based on quantum dot-sensitized nanostructures.

Investigation of Cu2ZnSnS4 solar cell buffer layer fabricated via spray pyrolysis

Copper zinc tin sulfide solar cells were fabricated by using spray pyrolysis from a window layer to an absorber layer. ZnS and In2S3 buffer layers were deposited on the TiO2 layer, and the photovoltaic characteristics were investigated. The ZnS buffer demonstrated a poor photovoltaic performance because of its poor surface coverage and micro-cracks at fluorine-doped tin oxide/TiO2 layers. The In2S3 buffer layer sprayed at low temperature (<360 °C) showed a large difference between photo and dark currents beyond the open-circuit voltage (VOC). When the spraying temperature exceeded 390 °C, the devices showed high dark leakage currents at reverse biases because of the high conductivity of the buffer layer, resulting in decreased VOC and short-circuit current density (JSC). The optimum temperature for spraying In2S3 is 360 °C, and the best performing device showed 410 mV, 30.4 mA/cm2, 35.3%, and 4.4% of VOC, JSC, fill factor, and efficiency, respectively.

Interfacial Mechanical Strength Enhancement for High-Performance ZnS Thin-Film Anodes.

Thin-film lithium-ion microbatteries with a high energy density and long lifespan are exceedingly desired for developing self-powered integrated micro-nano devices and systems. However, exploring high-performance thin-film anodes still remains a challenge. Herein, a double-layer-structure diamond-like carbon-ZnS (DLC-ZnS) thin-film anode fabricated by radio frequency magnetron sputtering exhibits high specific capacity and good cycling stability up to 1000 cycles, superior to the pure ZnS thin-film anode. To understand the mechanism, the bimodal amplitude modulated-frequency modulated atomic force microscopy was used to explore the mechanical properties of the thin films, and the DLC layer shows significantly higher Young's modulus than the ZnS thin film. The DLC interface with a high Young's modulus can effectively buffer the mechanical stress originating from the huge volume changes of the ZnS layer during lithiation/delithiation processes; therefore, the DLC interface maintains the higher mechanical integrity of the DLC-ZnS thin film and improves the utilization of ZnS. In addition, the electrochemical kinetics of the DLC-ZnS and ZnS thin films were also investigated by electrochemical methods. Electrochemical impedance spectroscopy tests indicate the obstacle of the DLC interface to Li+ ion diffusion in the initial charge/discharge processes; however, the DLC-ZnS thin film exhibits lower total resistance than the ZnS thin film afterward. In particular, galvanostatic intermittent titration technique tests were performed to find out the differences between the two thin films during the galvanostatical charge/discharge processes. The results demonstrate the obviously enhanced conversion reaction reversibility and decreased alloy reaction polarization of the DLC-ZnS thin film; therefore, it delivers higher reversible capacity.