Zinc Sulfide Thin Films Research Articles

Zinc sulfide thin films produced by spray pyrolysis: optical and structural characteristics

Zinc sulfide thin films were prepared using the economical spray pyrolysis process. A thin film of exceptional quality with a temperature difference of 300 °C to 400 °C is produced by optimizing variables such as concentration, flow rate, and nozzle to substrate distance. These films' optical characteristics and structure were examined. The deposited thin films displayed a direct and allowed transition, as indicated by the optical transmittance spectra. XRD analysis confirmed that the deposited thin films were polycrystalline with a cubic phase. This film can be used in solar cell applications since the band gap energy fluctuation is high enough, ranging from 3.42 to 3.81 eV.

Comparative Study of Zinc Sulfide Thin Films Fabricated by Spin Coating and Rf Magnetron Sputtering as a Buffer Layer for 2nd Generation Photovoltaics

Comparative Study of Zinc Sulfide Thin Films Fabricated by Spin Coating and Rf Magnetron Sputtering as a Buffer Layer for 2nd Generation Photovoltaics

Physical Properties of Nanostructured Zinc Sulfide Thin Films Deposited by the PLD Method for Gas Sensing

The pulsed laser deposition (PLD) technique created nanostructured semiconducting zinc sulfide (ZnS) thin films onto a quartz substrate. A gas sensing static unit, field emission scanning electron microscopy (FE-SEM), and X-ray diffraction (XRD) were used to analyze the structural, surface morphology, and gas sensing properties of the as-deposited thin films. After the ZnS thin films were formed, they were heated to evaluate the effects of annealing on the characteristics of the ZnS film. XRD analysis reveals that the ZnS thin films exhibit a structure similar to zinc blend cubes, with a preference for the (111) orientation. The X-ray diffraction (XRD) patterns that emerge during annealing show that ZnS thin films become more crystalline. Grain size increases as the annealing temperature rises. Images captured by field emission scanning electron microscopy (FESEM) revealed a grain-like sphere for each of the annealed thin films, confirming the growth of grains. The UV-Vis spectra showed that the ZnS samples' transmittance boosts after annealing because their crystalline quality is improved. The transmittance is measured within the 400 ̶ 900 nm band, and the optical band gap is direct at 3.72 eV, decreasing to 3.51 eV at 350 °C during annealing. Annealing significantly improves the physical properties of ZnS thin films, according to all presented data. NO2 and CO2 gas were used to obtain the I-V values ​​of the samples. The ability of ZnS thin films formed at different annealing temperatures was tested using NO2 gas. The sensors were fabricated and tested at different operating temperatures and NO2 gas concentrations of 100, 300, 400, 500, and 700 ppm.

ZnS and CdS nano thin films – A comprehensive analysis of structural, morphology and optical properties for photovoltaic applications

The current study is on the deposition of Zinc Sulfide and Cadmium Sulfide thin films by chemical bath deposition (CBD) technique. The deposited films were annealed at 200 °C and 350 °C in vacuum system. The Structural, Surface morphology, elemental composition and Optic analysis were performed by XRD, SEM, EDX, PL and optical transmission spectra. The XRD confirmed the formation of ZnS and CdS which revealed a broad spectrum in the low 2θ region due to its amorphous behaviour. The average optical transmission spectrum of ZnS lies between 65 % and 80 % and CdS lies between 50 and 60 %. The optical band gap of both the annealed films was decreasing with increase in temperature. The higher optical transmittance observed from emission spectra of PL analysis can contribute better performance and proved that the annealed ZnS and CdS thin films are applicable for photovoltaic applications.

Structural and opto-electronic engineering with ZnS ETL via PVD technique for efficient and durable heterojunction perovskite solar cells

This study presents a comprehensive investigation into fabrication and characterization of HJPSC leveraging chalcogenide Zinc Sulphide (ZnS) thin films as ETL and Selenium (Se) as a protective capping layer through PVD technique. ZnS thin films annealed at 200 °C, 300 °C and 400 °C were systematically analyzed for their structural and opto-electronic properties. Among them, ZnS-1, annealed at 200 °C, demonstrated superior performance with high transmittance, optimal crystallite size, wide bandgap, lowest photoluminescence intensity, high conductivity and low resistivity. Consequently, ZnS-1 was selected as the ETL for HJPSC fabrication. The HJPSC device was fabricated with ZnS/MAPbI3--Se/Ag as device structure with Se as capping layer. SEM images confirmed the smooth and continuous nature of the ZnS-1 film, while X-Ray diffraction analysis validated the purity and crystallinity of MAPbI3 perovskite layer. The successful alignment of the perovskite absorption band with the solar cell emission spectrum obtained by UV–Vis spectra highlighted the potential for efficient solar energy conversion. J-V characteristics of the HJPSC device exhibited a high short-circuit current (Jsc) of 20.18 mA/cm2, an open-circuit voltage (Voc) of 0.99 V, a power conversion efficiency (PCE) of 9.1 % and fill factor (FF) of 45.7 % was accredited to improved electron conductance and of ZnS-1 as an ETL.

Fabrication of cobalt-doped ZnS thin films by successive ionic layer adsorption and reaction for UV–visible photodetectors on flexible substrate

Photodetectors are widely employed in research and innovation, necessitating swift response times, precision, and stability. However, their application in commercial and industrial settings is hindered by limited flexibility and a constrained capacity to respond across a broad spectrum. In this study, we adopted a facile, cost-effective, and room temperature Successive Ionic Layer Adsorption and Reaction (SILAR) technique to craft thin films of Cobalt-doped ZnS on a flexible paper substrate. The Cobalt doping, with varying wt.% (0, 0.5, 1, and 1.5) exhibiting excellent responsivity to both UV and visible spectra. Zinc Sulfide (ZnS), renowned for its wide bandgap, serves as a versatile semiconductor, making it an ideal candidate for photodetectors. The introduction of Cobalt broadened the responsivity of ZnS, covering a wide spectrum, including UV and visible regions. Structural confirmation of the material was achieved through XRD and Raman analyses. Scanning Electron Microscopy revealed the aggregated spherical nanostructure of ZnS on the cellulose substrate. Verification of Cobalt presence in the ZnS thin film and assessment of elemental oxidation states were conducted using XPS. Temporal response and I–V characteristics of the device were evaluated under varying light conditions, specifically at wavelengths of 325 nm and 700 nm at different intensities. Responsivity calculations yielded values of 22.5 mA/W for UV illumination (light intensity 0.6 mW/cm2) and 37.6 mA/W (light intensity 0.4 mW/cm2) for visible light, with corresponding response times recorded as 1.45 s and 2.13 s, respectively. In addition to performance assessments, bending cycle studies were conducted, demonstrating the excellent flexibility of the device up to 800 cycles. The Cobalt-doped ZnS device, as fabricated, emerges as a promising material for energy harvesting.

Influence of annealing temperature on nano crystalline description for CuZnS thin films

Copper Zinc Sulphide (Cu0.5Zn0.5S) alloy and thin films were fabricated in a vacuum. Nano crystallized (CZS) film with thick 450±20 nm was deposit at substrates glasses using thermal evaporation technique below ~ 2 × 10− 5 mbar vacuum to investigated the films structural, morphological and optical properties depended on annealing temperatures ( as-deposited, 423, 523 and 623) K for one hour. The influences annealed temperature on structurally besides morphologically characteristics on these films were investigated using XRD and AFM respectively. XRD confirms the formation a mixed hexagonal phase of CuS-ZnS in (102) direction with polycrystalline in nature having very fine crystallites size varying from (5.5-13.09) nm. AFM analysis shows the uniform distribution of closely packed grains, grain size for that film diverge on ranges as of (52.37 to 89.25) nm after annealed. The optical properties of all films prepared had been examined for the wavelength range 400 - 1000 nm using UV-Vis-NIR spectrometer. The band gaps of (Cu0.5Zn0.5S) films are obtained in the range of 2.4 to 1.9 eV, which makes it a suitable absorber as well as buffer/window layer for solar cell applications.

Impact of Basic Bath on Optical and Electrical Characteristics of Zinc Sulfide (ZnS) Thin Films

Impact of Basic Bath on Optical and Electrical Characteristics of Zinc Sulfide (ZnS) Thin Films

Recent advancement in the synthesis of zinc sulphide thin films

This research work has given an overview on the preparation of zinc sulphide thin films on different types of substrates (quartz, soda lime glass, silicon, polyethylene terephthalate film, fluorine-doped tin oxide glass, indium tin oxide coated glass, silica, stainless steel, mica, microscopy glass slide and (100) GaAs substrate) using different types of deposition methods. XRD data showed information about the different phases (cubic, wurtzite and hexagonal) presented in the obtained as-deposited films and annealed samples. Based on optical studies, the band gap was observed in the range of 2.6 eV to 3.87 eV with good absorption coefficient value (105 to 106 cm-1). Experimental results indicated these films could be used in solar cell applications, anti-reflection coating, photocatalysts, photo detector devices and laser-oriented coating applications.

A study of morphological, optical, and photoluminescence properties of ZnS thin films doped Mn and ca

In this study, zinc sulfide (ZnS) thin films were deposited via physical vapor deposition (PVD) under high vacuum conditions, incorporating dual dopants manganese (Mn2+) and calcium (Ca2+). Morphological examination by AFM revealed that Mn2+ promoted a uniform and smooth film structure, whereas Ca2+ induced surface roughness. Optical characterization using ultraviolet–visible spectroscopy showed high transparency in the visible range, with doping leading to significant alterations in the bandgap energy. Photoluminescence investigations displayed prominent emission peaks at 385 nm, 448 nm, and 560 nm, characteristic of ZnS bandgap emissions, as well as an additional peak at 600 nm due to the novel dopant's influence. X-ray fluorescence (XRF) and Fourier transform infrared (FTIR) analyses verified the presence of ZnS and other constituents. Doping improved the optical and luminescent characteristics, offering potential for use in optoelectronics, light-emitting diodes (LEDs), and advanced technology development. This customizable approach to ZnS thin films presents innovative opportunities within material science and device manufacturing.

Effect of Annealing Temperature on the Structural Properties of Dual Solution Synthesized AlS: ZnS Thin Films

Using two solution-based techniques—solution growth technique (SGT) and sequential ionic layer adsorption and reaction (SILAR) AlS: ZnS alloyed thin films were successfully produced on glass substrates. The sources of Al, Zn, and S were aluminum sulphate (AlSO4.7H20), zinc sulphaate (ZnSO4.7H20), and sodium thiosulphate (Na2S2S03). The complexing agent that was utilized was ethylene diamine tetraacetic acid (EDTA). Using a Master Chef Annealing Machine, the deposited alloyed samples were annealed between 373K and 523K. The scanning electron microscope (SEM) and X-ray diffractometer (XRD) were used for the crystallographic investigations. Samples R1 and R6 AlS: ZnS alloyed thin films exhibit well-defined peaks in their XRD pattern, indicating that they are polycrystalline in nature. We computed their grain sizes. Spectroscopy using Rutherford backscattering (RBS). Analysis using Rutherford backscattering spectroscopy (RBS) verified the composition of aluminum, zinc, and sulfur in the alloyed thin films. The microstructure of the deposited alloyed thin films is revealed by the results of surface electron microscopy. Two significant semiconductor materials that have potential uses in optoelectronics, photovoltaics, and sensing devices are aluminum sulfide (AlS) and zinc sulfide (ZnS). Depositing these materials in thin films at a reasonable cost and with good efficiency is possible with dual solution synthesis. However, the annealing temperature, a crucial factor in establishing the crystal structure, morphology, and optical properties of these films, can have an impact on their structural characteristics. Prior studies have examined how the annealing temperature affects the structural characteristics of AlS and ZnS thin films separately; however, the dual solution-produced AlS: ZnS thin films have not received as much attention. The purpose of this work is to examine how the annealing temperature affects the crystal structure and surface morphology of AlS: ZnS thin films. The results of this investigation can offer significant understanding regarding the refinement of the annealing temperature to produce superior AlS: ZnS thin films for a range of uses. Based on their properties, sulphide alloyed thin films could find applications in microelectronics, window coating, and antireflection coating. They work well as coatings for eyeglasses and as absorber layers for photocells, among other applications.

Effect of Copper Inclusion in Zinc sulfide Thin Films for Photocatalytic Applications

Transparent and well-adhered pure zinc sulfide (ZnS) and different concentrations of copper-doped zinc sulfide thin films were obtained on glass substrates by the Chemical bath deposition process. Zinc acetate, copper acetate and thiourea were employed as sources of Zn2+, Cu2+ and S2- ions, respectively; ammonia and hydrazine hydrate served as complexing agents for the preparation of pure zinc sulfide and different concentrations of copper-doped zinc sulfide thin films. By adjusting the ammonia concentration, the prepared solution pH was maintained at 11. The prepared samples were deposited at the rates of 60 and 90 minutes each, with the bath temperature being held at 80 °C. The structural, morphological and optical properties of the prepared films were characterized by XRD, FE-SEM and EDX, and the results were reported. The XRD patterns revealed that all thin films possess a polycrystalline cubic zinc blended structure and that the prepared pure and copper-doped ZnS thin films have good crystallinity; the crystallite sizes were less than 20 nm. From the FE-SEM spectra, it is understood that the pure and Cu-doped ZnS thin films were uniformly coated with spherical morphology. The surface morphology, optical characteristics and deposition mechanism were all obviously impacted by the ammonia concentration. Additionally, under UV light irradiation, the effect of the photocatalytic property of the prepared thin films with methylene blue dye was studied and the corresponding dye degradation graphs were reported.

Zinc sulfide thin films deposited by chemical bath: Tuning consideration of structural, optical band gap, and electrical properties for CIGS solar cells application

Zinc sulfide (ZnS) is widely employed in a solar cell structure as a buffer layer due to its excellent physical and chemical properties. ZnS elements discovered in the earth's crust are safe. This study examined the performance characteristics of ZnS thin films deposited on soda lime glass substrate via chemical bath deposition. The ZnS thin films were annealed at temperatures of 300, 400, and 500 °C in a vacuum environment. XRD showed the ZnS thin films with high annealing temperatures are composed of a wurtzite structure. Increased annealing temperature improved crystallization, average crystallite sizes, film thickness, and low dislocation density as well as lattice strain. The FESEM analysis reveals that the morphology of annealed thin film at high temperatures has larger grains compared to the deposited films. EDS spectra confirm that zinc and sulfur are present in the ZnS thin film. Annealed films have an average transmission of 20–50 % in the visible spectrum of 300–1100 nm. Films exhibit 103 Ωcm resistivity, and the bulk carrier density ranges between 1012 and 1014 cm−3. The annealed film at 500 °C has a direct band gap of 3.47 eV, a resistivity of 1.79 × 103 Ωcm, and a bulk concentration of 1.19 × 1014 cm−3. All ZnS thin films have n-type conductivity.

Investigation of Cu Doping Concentration on the Structural and Antimicrobial Properties of TiO₂ Thin Films

This study aims to examine the microorganism-fighting properties of the thin layers of TiO2. These TiO2 film as synthesized through a chemical process, in which different concentrations of copper have been added. The ability of films to inhibit the growth of different types of bacteria and fungi was examined using the disk diffusion technique. TiO2 films without additives exhibited mild antibacterial action, with inhibition areas varying according to the dose and type of microorganism. In contrast, the films that received a dose of copper showed significant increases in their ability to inhibit bacterial growth. More prominent detention areas were observed when a dose of 60 µg/mL and a doping concentration of 0.1% were used. According to X-ray diffraction tests, it was revealed that the thin films of TiO2 exhibit a cubic crystalline configuration, indicating their high crystallinity and the variation in the position of the peaks due to the inclusion of copper in their composition. The effectiveness in combating bacteria increased when the size of the crystals was raised from 6.72 nm (undoped) to 8.39 nm in presence of 0.1% copper. Significant changes occurred in the external appearance, as seen in the photographs taken using scanning electron microscopy (SEM). The modifications higher concentration of Cu doping, a transformation from smooth surfaces of pure ZnS to rough and porous layers in the films doped with Cu is observed. Specifically, the study reveals that by adding copper to thin films of zinc sulfide, their effectiveness can be enhanced, paving the way for the advancement of materials with antimicrobial properties.

Synthesis, characterisation and reactivity of a zinc triazenide for potential use in vapour deposition.

In this study, we synthesised and characterised a new zinc(II) triazenide for potential use in vapour deposition of zinc sulphide thin films. The compound is volatile and quantitatively sublimes at 80 °C under vacuum (0.5 mbar). Thermogravimetric analysis showed a one-step volatilisation with an onset temperature at ∼125 °C and 5% residual mass. The compound also reacted with 2 or 4 molar equivalents of triphenylsilanethiol to give dimeric and monomeric zinc thiolates, respectively. The high volatility, thermal stability, and reactivity with sterically hindered thiols makes this compound a potential candidate for use in vapour deposition of zinc containing thin films.

Retracted: Studying the Effect of Metallic Precursor Concentration on the Structural, Optical, and Morphological Properties of Zinc Sulfide Thin Films in Photovoltaic Cell Applications

Retracted: Studying the Effect of Metallic Precursor Concentration on the Structural, Optical, and Morphological Properties of Zinc Sulfide Thin Films in Photovoltaic Cell Applications

Effect of tin inclusion on zinc sulfide thin films properties for photocatalytic applications

Tin doped zinc sulfide (Sn:ZnS) thin films are synthesized by chemical bath deposition (CBD) technique. Tin concentration is varied from 0 to 12 at.-% by a step of 3 at.-%. Structural investigation by X-ray diffraction (XRD) analysis shows the crystallization of the material along the cubic structure as well as an improvement of the crystallinity after Sn inclusion. The surface morphology and film thickness are examined by scanning electron microscopy (SEM) revealing some surface modifications after tin incorporation. Also, some microstructures are observed for the sample elaborated with 9 at.-% Sn. These new microstructures are due to the segregation of tin in the film. Collected optical data show high transmittance in the visible range. The band gap energy is estimated to be about 3.8 eV. Impedance spectra show single semi-circle indicating a single relaxation process. Photocatalytic activity is evaluated and an increment of the degradation efficiency is remarked with the increase of the irradiation time.

Investigation of structural and optical properties of Mg doped ZnS thin films prepared by Mist-CVD technique: Experimental and theoretical aspects

In the present study, undoped and magnesium (Mg)-doped zinc sulfide (ZnS) thin films were prepared using the low-cost Mist CVD technique on a soda-lime glass substrate in a reactor chamber maintained at a high temperature of 450 °C ± 10 °C. The structural, vibrational, chemical compositional, morphological, optical and electric characteristics of the prepared Zn1-xMgxS thin films were studied using X-ray diffraction (XRD), Raman spectroscopy, energy dispersive spectrometer (EDS), scanning electron microscopy (SEM), photoluminescence emission (PL), atomic force microscopy (AFM) analysis, and Hall effect measurements. The aim of the present work is to examine the effect of incorporation of Mg into ZnS thin films matrix. XRD and Raman spectroscopy investigations confirmed the formation of polycrystalline micro structured films. The presence of Zn, S, and Mg elements was confirmed by EDS Analysis. The growth of the surface roughness of the films with increasing Mg content, as well as the crystalline size lead to a higher carrier concentration (5.103 × 1018 cm−3), and lower resistivity of the thin films (5.021 × 10−3 Ω cm). Furthermore, DFT investigation of the electronic properties using the GGA/PBE + U functional provides a detailed explanation of the band structure and confirms the band gap reduction after doping wurtzite ZnS with Mg (12 at.%). Therefore, the outcome of this of this study might provide an experimental and theoretical background for future research on Mg-doped ZnS.

Carrier–phonon interaction and anharmonic phonon decay in ZnS thin film studied by resonance Raman scattering

AbstractResonance Raman scattering was carried out on polycrystalline zinc sulfide (ZnS) thin film. The resonance Raman spectra revealed strong carrier–phonon interaction where longitudinal optical phonon (LO) with overtones up to the fourth order and its combination phonons with transverse acoustic (TA) phonons were observed, namely, nLO + mTA (where n and m are integers). The resonance Raman scattering processes were well explained within the framework of the cascade scattering model. The wavenumber of the LO phonon with increased temperature was dominated by anharmonic phonon decay. Detailed experimental data fittings showed that thermal expansion contribution to the nLO phonon overtones differed from the fundamental LO phonon due to the involvement of the scattering of the LO phonons at the Brillion zone edge. The negative value of the mode‐Grüneisen parameter for the TA phonon slowed down the wavenumber shift of the combination nLO + mTA phonon modes with increasing temperature compared to the nLO phonons. The anharmonic phonon decay of combination nLO + mTA phonons were dominated by anharmonic phonon decay of nLO phonons.

Synthesis, Structural, and Morphology of Zinc Sulfide Thin Film Nanoparticle Annealing

An electrochemical process was used to deposit zinc sulfide thin films on glass substrates. The study aims to determine whether the annealing of zinc sulfide thin films changes their properties. An analysis of the X-ray diffraction patterns (XRD) determined that annealing controls zinc sulfide (ZnS) thin-film crystallinity and influences the structure of zinc sulfide crystallites, which range from cubic to hexagonal. A Field Emission Scanning Electron Microscope was used (FESEM) to obtain images of thin films. None of thin films that not paneled or annealed displayed grain-like morphologies. while grain growth was an appropriate response to annealing at 150, 250 or 350 °C. Distributed crystalline quality, the EDX analysis confirms the presence of zinc and sulfur in the obtained films, distributed crystalline quality.