Zinc Oxide Semiconductor Research Articles

Discussion on the wrapping phenomenon of Cu-ZnO system by in-situ investigation during microwave sintering

The microstructure evolution during zinc oxide (ZnO) and metallic copper (Cu) microwave sintering was in situ investigated by using synchrotron radiation computed tomography (SR-CT). Based on the SR-CT experiment, the coupling effect between the materials and the microwave electromagnetic field was discussed. During microwave sintering, special three-dimensional microstructure evolution was directly observed. The copper particles were gradually “wrapped” by surrounding zinc oxide particles. The special phenomenon of "wrapping" may be related to the change in the conductivity of semiconductor ZnO. It was proposed that there might be an "electromagnetic attraction" between particles during the "wrapping" process. The electromagnetic attraction was further discussed by comparing the microstructure evolution in different directions and at different initial distances. The center distance reduction of Cu-ZnO particles in the vertical cross section was more obvious, and the “wrapping” phenomenon was more obvious with a closer initial distance. The electromagnetic attraction proposed in this paper was supported by some experimental phenomena. The research in this article could have implications for revealing the mechanisms of microwave sintering.

Defect assisted Reactive Oxygen Species generation for photocatalytic degradation of methylene blue by nano-structured zinc oxide synthesized in CTAB medium

Herein, we report facile, room temperature synthesis of undoped zinc oxide semiconductor nanoparticles and their efficient photocatalytic property towards methylene blue dye degradation. Synthesis of zinc oxide nanoparticles was carried out by facile, eco-friendly and cost-effective, CTAB-assisted method using various aliphatic amines (methyl amine, dimethyl amine and n-butyl amine) as bases. The phase purity, structure, crystallinity, morphology and optical properties of the materials obtained with different aliphatic amines were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–Vis and photoluminescence spectroscopy investigations. It was proved that the different aliphatic amines used manipulates both photodegradation properties and morphology of the undoped ZnO materials. The nanomaterial synthesized with n-butyl amine showed the highest catalytic degradation due to high absorption (∼40%) in visible region. The presence of oxygen and zinc vacancies were confirmed from the two emission bands under UV excitation in photoluminescence (PL) studies. Visible light-driven photocatalytic activity of the prepared ZnO nanorods was evaluated by measuring the photodegradation of widely used industrial organic pollutants methylene blue, showed good efficiency of the catalytic samples. In this present study, we propose a mechanism involving e-h pair generation through bandgap and ROS generation assisted aptly by the presence of defects, facilitating the photo-catalytic activity towards dye degradation.

Failure analysis on silicon semiconductor device materials: optical and high-resolution microscopic assessments

Defects of silicon (Si) semiconductor epilayers are crucial to be identified at laboratory environs. The identification of failure and its rectification at laboratory settings is essential for large-scaling manufacturing of narrowed down semiconductor devices. This research documented the inspection, identification and the solution for defects found in the Si semiconductor epilayers, fabricated by a simple and conventional photolithography technique, with the integration of metal oxide nanomaterial, zinc oxide (ZnO). The semiconductor epilayers, Si wafer, Si oxide and ZnO coated SiO2 layer were formed and examined. Optical microscope images [high power microscope (HPM) and 3D profilometer] reveal smooth surface of semiconductor epilayers development through thermal oxidation and photolithography techniques. High power ultraviolet-visible (UV-Vis) justified the accuracy of wet thermal oxidation by examining the thickness of oxide layer on Si wafer at 3837.3 Å. The X-ray diffraction (XRD) analysis of sol-gel synthesized ZnO affirmed the hexagonal crystalline state and its nanoscale size at 54 nm. Field emission scanning electron microscopy (FESEM) has shown the insight of Si epilayer morphology with its elemental composition, which provides details of foreign substances on semiconductor surface. ZnO deposited Si epilayer was prepared through lamella preparation, prior to the cross-sectional field emission transmission electron microscopy (FETEM) analysis of the semiconductor, which revealed the uniformity of fabrication and ZnO distribution at Si epilayer. Failure analysis reported several defects on the Si epilayers in the state of patches and accumulation of impurities. The potential cause of the defects and the respective solutions are discussed as the accuracy and handling must be ensured throughout the fabrication process, to develop a flawless semiconductor for high performance applications.

Sol-Gel Synthesis of Zinc oxide Semiconductor Powder for Varistor Structures

Synthesis of ZnO powders created by the sol-gel method for the use in the production of varistors is currently one of the promising areas. This method allows mixing of additives at the atomic level, which promotes a homogeneous distribution of impurities, it also makes it possible to control the particle size, which contributes to the miniaturization of the varistor and does not require secondary heating, and is also an environmentally friendly method. In this work, we carry out the synthesis of ZnO varistor powder with further fabrication of the varistor structure within the framework of the sol-gel method, as well as the study of the obtained samples at all stages of work. During the synthesis process, the ZnO powder was obtained by the sol-gel method, from which samples of varistor structures were made, at a sintering temperature of 900 °C. During the synthesis, the sol was studied at all stages of maturation by IR-Fourier spectroscopy; during the study, the formation of nano-aggregates in the gel and the presence of ZnO in the resulting powder were obtained. The structure of the instrumental samples was studied by scanning electron microscopy, during which the average grain size of ZnO was calculated as 0.25μm. The constructed volt-ampere characteristics in the voltage range of —220...220 Vhad a distinct non-linearity with a coefficient of 2.36.

Electric field responsive nanotransducers for glioblastoma

BackgroundElectric field therapies such as Tumor Treating Fields (TTFields) have emerged as a bioelectronic treatment for isocitrate dehydrogenase wild-type and IDH mutant grade 4 astrocytoma Glioblastoma (GBM). TTFields rely on alternating current (AC) electric fields (EF) leading to the disruption of dipole alignment and induced dielectrophoresis (DEP) during cytokinesis. Although TTFields have a favourable side effect profile, particularly compared to cytotoxic chemotherapy, survival benefits remain limited (~ 4.9 months) after an extensive treatment regime (20 hours/day for 18 months). The cost of the technology also limits its clinical adoption worldwide. Therefore, the discovery of new technology that can enhance both the therapeutic efficiency and efficacy of these TTFields will be of great benefit to cancer treatment and decrease healthcare costs worldwide.MethodsIn this work, we report the role of electrically conductive gold (GNPs), dielectric silica oxide (SiO2), and semiconductor zinc oxide (ZnO) nanoparticles (NPs) as transducers for enhancing EF mediated anticancer effects on patient derived GBM cells. Physicochemical properties of these NPs were analyzed using spectroscopic, electron microscopy, and light-scattering techniques.ResultsIn vitro TTFields studies indicated an enhanced reduction in the metabolic activity of patient-derived Glioma INvasive marginal (GIN 28) and Glioma contrast enhanced core (GCE 28) GBM cells in groups treated with NPs vs. control groups, irrespective of NPs dielectric properties. Our results indicate the inorganic NPs used in this work enhance the intracellular EF effects that could be due to the virtue of bipolar dielectrophoretic and electrophoretic effects.ConclusionsThis work presents preliminary evidence which could help to improve future EF applications for bioelectronic medicine. Furthermore, the merits of spherical morphology, excellent colloidal stability, and low toxicity, make these NPs ideal for future studies for elucidating the detailed mechanism and efficacy upon their delivery in GBM preclinical models.

Functional bioinspired nanocomposites for anticancer activity with generation of reactive oxygen species

Cancer is a debilitating and deadly disease caused by the uncontrolled growth of aberrant cell populations. This disease cannot always be controlled with traditional therapies and medicines. Different medicines are being used for this purpose, however these medicines have their side effects and are harmful to healthy cells. A better way to cure cancer disease is by limiting the agglomeration of cancer cells, minimizing their growth and their population by destroying these harmful cells. This could be achieved by controlling the function of mitochondria and DNA in cancer cells with the use of biocompatible materials with tuneable physical properties. Accordingly, research is ongoing as to the use of nanomaterials and nanotechnology in medicine. Zinc oxide semiconductor nanoparticles have displayed good anticancer behaviour. They have unique properties such as biocompatibility, good stability, and are environmentally friendly. Owing to these characteristics, they are focused on biological applications such as drug delivery and cancer therapy. In the present research work, zinc oxide, titanium dioxide nanoparticles and titanium oxide-zinc oxide nanocomposites were successfully trailed for anti-cancer activity. Pure zinc oxide nanoparticles (ZnO NPs), titanium dioxide nanoparticles (TiO2 NPs) and their nanocomposites (TiO2+ZnO NPs) were prepared by the co-precipitation technique. The structural properties were investigated by X-ray diffraction, which confirmed the Wurtzite structure of pure ZnO NPs. The morphology of the NPs was checked by scanning electron microscopy. For incident light having a higher energy band gap of nanomaterials, the electrons are excited to the conduction band and these electrons generate reactive oxygen species (ROS). The efficacy of these nanomaterials was checked by exposing the NPs to the human liver cancer cell HepG2. The MTT assay describes anticancer activity via cell viability. The cell viability of composites was observed to be greater than pure ZnO NPs. Their results showed that the structure of ZnO NPs remains the same with composites of TiO2 NPs, but the band gap of the composite was intermediate for individual samples. It also showed that the anticancer activity of composites was also less than pure ZnO NPs which is due to the reduction of ROS generation. This is observed that nanocomposites of ZnO and TiO2 could be effective in the development of a treatment of human liver cancer cells.

(Invited) Nanospike Electrode Thin-Film Transistors: A New Design for Improved Nanoscale Tfts

A new design for short channel length thin-film transistors (TFTs) is proposed and demonstrated with indium gallium zinc oxide (IGZO) and organic semiconductor active layers. The principal advantages of the new design arise from two distinct effects: (i) Nanospike array electrodes produce field-emission enhanced charge injection from the source/drain contacts to the semiconductor and lead to higher currents, current densities, and carrier velocities. (ii) Quasi-three-dimensional gate control at low gate voltages leading to improved turn-off characteristics, better sub-threshold swing and reduced drain voltage dependence of sub-threshold behavior. These advantages are very beneficial for back-end-of-the-line (BEOL) TFTs and will also apply to most other semiconductor material TFTs with Schottky contacts. Multi-nanospike TFTs with channel lengths as small as 50 nm, and single nanospike TFTs with channel lengths of ~ 10 nm have been fabricated.

Development of Tetrapod Zinc Oxide-Based UV Sensor for Precision Livestock Farming and Productivity.

In order to ensure the health and welfare of livestock, there has been an emphasis on precision farming of ruminant animals. Monitoring the life index of ruminant animals is of importance for intelligent farming. Here, a wearable sensor for monitoring ultraviolet (UV) radiation is demonstrated to understand the effect of primary and secondary photosensitization on dairy animals. Thin films of wide bandgap semiconductor zinc oxide (ZnO) comprising multilevel of nanostructures from microparticles (MP) to nanoparticles (NP), and tetrapod (T–ZnO), were prepared as the UV sensing active materials. The sensitivity was evaluated by exposing the films to various radiation sources, i.e., 365 nm (UV A), 302 nm (UV B), and 254 nm (UV C), and measuring the electrical resistance change. T–ZnO is found to exhibit higher sensitivity and stable response (on/off) upon exposure to UV A and UV B radiation, which is attributed to their higher surface area, aspect ratio, porosity, and interconnective networks inducing a high density of chemical interaction sites and consequently improved photocurrent generation. A wearable sensor using T–ZnO is packaged and attached to a collar for dynamic monitoring of UV response on ruminant animals (e.g., sheep in this study). The excellent performance of T–ZnO wearable sensors for ruminant animals also holds the potential for a wider range of applications such as residential buildings and public spaces.

C-axis aligned crystalline indium–gallium–zinc oxide ceramics and oxide semiconductor LSI as countermeasures against global warming

In 2009, we discovered an oxide semiconductor (OS) of a ceramic material that has a novel crystal morphology, a c-axis aligned crystalline (CAAC) structure, which is different from a single crystal structure, a polycrystalline structure, and an amorphous structure. Since then, we have evaluated the compatibility of LSIs using OS (OSLSIs) with LSIs using Si (SiLSIs) in terms of manufacturing apparatuses and lines. Consequently, we found that OSLSIs excel SiLSIs in some characteristics, and that the stable production of OSLSIs requires controlling the following three key points: concentrations of hydrogen and oxygen, and distortion energy. Furthermore, we succeeded in downscaling OSLSIs, which is unfeasible for SiLSIs. We obtained a cutoff frequency of 120 GHz in an OS field-effect transistor (OSFET) having a gate length of 6.7 nm. We also obtained an Ioff of 10−22 A/μm (R T.) in an OSFET having a gate length of 22 nm, which is lower than that of a Si field-effect transistor by ten orders of magnitude. Additionally, a stacked structure in which an OSLSI and a SiLSI are combined enabled a normally-off central processing unit (NoffCPU) to have an ultralow power consumption of 10 TOPS/W (8 bits). These characteristics attract some companies that positively consider the mass production of the OSLSIs. The advancement in OSLSI technology can realize the application to data centers and supercomputers. We believe that an ultralow power LSI that employs an OS/Si combined (3D) structure and has a power consumption of one-hundredth of a conventional LSI is the one and only solution to global warming in the topic discussed. Therefore, we propose an OS as a next-generation VLSI semiconductor material.

Application of ink based on zno semiconductor nanomaterials in printing process

This paper studies the application of zinc oxide semiconductor nanomaterials in the printing process, including (1) photolithography technology (2) microcontact technology (3) screen printing (4) inkjet writing technology commonly used in daily life. Among them, the screen printing and lithography technology are analyzed in detail, and the use process and specific process of the two methods are introduced. In the process of preparing zinc oxide into ink, not only the method and process are introduced in detail, but also chemical formulas and examples are listed. In the experiment on ZnO, it can be objectively analyzed that the evaporation characteristics of the organic solvent of the ZnO semiconductor nanomaterials determine the characteristics of the carrier, which leads to the uneven quality of the formed printed film. If the solvent evaporates quickly, the paint will gradually evaporate the water in it during printing to increase the viscosity of the slurry.

Carrier concentration-dependent interface engineering for high-performance zinc oxide piezoelectric device

Piezoelectric semiconductor zinc oxide (ZnO) shows promising applications in many fields, however, its excellent piezoelectric performance is limited by the intrinsic screening effect. Forming p-n junction through interface engineering is an effective strategy to enhance its piezoelectric output, but the unclear regulation mechanism is a bottleneck in developing high-performance devices. In this work, the enhancement mechanism of interface engineering on the piezoelectric performance of ZnO nanorods (NRs) based devices is revealed from the perspective of carrier concentration. Both the theoretical and experimental results show that the piezoelectric output is significantly correlated with the carrier concentration, which is mainly attributed to the suppression of screening effect and the modulation of the device capacitance. After a reasonable matching design of carrier concentration, the piezoelectric potential of the ZnO NRs-based device is greatly enhanced by about 12 times. Apparently, these findings provide a fresh insight to further understand the enhancement mechanism of interface engineering on the electrical output of piezoelectric semiconductor devices, and provide effective support for the design of p-n junction piezoelectric devices.

Ultra-Thin and Lithography-Free Transmissive Color Filter Based on Doped Indium Gallium Zinc Oxide with High Performance.

A kind of ultra-thin transmissive color filter based on a metal-semiconductor-metal (MSM) structure is proposed. The displayed color can cover the entire visible range and switches after H2 treatment. An indium gallium zinc oxide (IGZO) semiconductor was employed, as the concentration of charge carriers can be controlled to adjust the refractive index and achieve certain colors. The color modulation in the designed structure was verified using the rigorous coupled wave analysis (RCWA) method. The angular independence of the relative transmission could reach up to 60°, and polarization-insensitive performance could also be maintained. Numerical results demonstrated that the thickness of IGZO was the key parameter to concentrate the incident light. The overall structure is planar and lithography-free and can be produced with simple preparation steps. The obtained results can also be extended to other similar resonators where a proper cavity allows dynamical functionality.

Photocatalytic activity of zinc oxide – graphene oxide composites

Recently, the use of various dyes in the cellulose, textile, plastics and rubber industries has resulted in severe toxic and dye contamination of wastewater. These toxic dyes are not biodegradable and have a detrimental effect on the environment, blocking sunlight and reducing photosynthesis. Consequently, there is an urgent need to develop a low-cost effective technology for purifying wastewater from harmful organic pollutants. In this context, photocatalysis is an advanced, environmentally friendly oxidation process for wastewater treatment. Recent studies have shown that the use of semiconductor photocatalytically active materials with a wide band gap is an effective method for the decomposition of organic pollutants in aqueous solutions. In this work, a low-cost technology for the synthesis of composite semiconductor zinc oxide / graphene oxide (ZnO / GO) materials by chemical deposition from an aqueous solution has been developed. The morphology, structural and photoluminescent properties of the synthesized ZnO/GO samples with different graphene oxide concentration have been studied. The research of the photocatalytic activity of synthesized zinc oxide – graphene oxide composite materials is carried out by observing an aqueous solution of rhodamine B dye degradation under ultraviolet illumination.

Analysis of the optical properties of ZnO thin films deposited on a glass substrate by the So-gel method

Zinc oxide (ZnO) has attracted the attention of researchers as a photocatalyst material, because ZnO has a wide direct band gap (3.37 eV) and is a semiconductor material with a large excitation binding energy (60 meV). ZnO is a photocatalyst that has many advantages, namely cheap, non-toxic, and theoretically very active under UV irradiation. The most interesting thing about ZnO semiconductor compared to other semiconductors is that ZnO can absorb most of the solar spectrum. However, there is a weakness of the ZnO semiconductor, namely the very fast recombination of charge carriers and the ZnO semiconductor has a low efficiency in the visible region which causes the ZnO semiconductor to have a wide band gap. that is the weakness of ZnO. it is necessary to choose the right method to overcome this deficiency of ZnO. one way that can be done is to increase the photocatalytic ability of zinc oxide, it is necessary to develop it in the manufacture of thin films. The method used in the manufacture of Thin Film is using the sol-gel spray coating method. the first stage is through the manufacture of ZnO precursors by dissolving zinc acetate dehydrate with isopropanol solvent through stirring. then the second stage by adding Monoethanolamine. This stirring lasted for 30 minutes at a temperature of 70°C, the precursor concentration was prepared with three different concentrations which included concentrations of 0.1, 0.3, and 0.5 M. ZnO precursor deposited on the substrate glass is blown at 400 °C. Optical properties are carried out by recording the transmittance and absorbance which are affected by increasing concentrations. The optical transmission spectra show that the transmission increases with decreasing concentration and the maximum transmission in the visible region is about 90% for ZnO thin films prepared with 0.1 M. The optical band gap value produced by the thin film of 0.1 M precursor concentration resulted in an energy band gap of 3.11 eV; thin films of 0.3 M precursor concentration produced an energy band gap of 3.07 eV; and thin film of 0.5M precursor concentration produced an energy band gap of 3.06 eV.©2022 JNSMR UIN Walisongo. All rights reserved.

Evaluation of structural, morphological, optical, and electrical properties of zinc oxide semiconductor nanoparticles with microwave plasma treatment for electronic device applications

ZnO is an important II-IV n-type direct bandgap semiconductor material that has exhibited wide consideration due to its applications in optoelectronic devices. In the present investigation, untreated and plasma-treated ZnO NPs were fabricated by a sol-gel route and analyzed with XRD, Raman, UV-Vis spectra, and I–V characteristic techniques. To be used in electronic applications, the ZnO nanoparticles were subjected to a plasma treatment process to tune their optical, vibrational mode, structural and electrical properties. XRD confirmed the pure Wurtzite tetragonal phase crystalline nature of produced samples. The average crystalline size, lattice constant, unit cell volume, and porosity were found in the range of 3.81–4.68 nm, a = 3.217–3.323 Å and c = 2.032–2.178 Å, 5.662–11.274 Å3 and 7.09–5.03%, respectively. The Raman spectra revealed that the intensity of Raman bands was increased due to the increase in the vibrational amplitude and increase in force constants with the enhancement in grain size, these spectra results are in good agreement with XRD and reveal the purity of samples. The bandgap found reduced from 3.56 eV to 3.39 eV by plasma treatment. The electrical studies revealed that plasma treatment improves the electrical properties of ZnO NPs without producing any structural distortions. I–V characteristic curves confirmed that the conductivity was increased from 8.3 X 10−6 to 5.5 X 10−4 ℧ cm−1 on plasma treatment which caused an increase in leakage current. The improved structural, vibrational mode, optical and electrical properties of prepared ZnO NPs make them a suitable candidate for application in electronic devices.

Development of Photoluminescent ZnO Nanoparticles for Biological Tracking.

Nanoparticles (NPs) that can be optically tracked are of interest for cell and organismal biodistribution studies. However, dyes or fluorophores crosslinked or adsorbed onto NP surfaces may detach or leach, resulting in optical artifacts. NP surfaces altered to carry dyes or fluorophores are also anticipated to affect toxicity profiles, protein interactions, and cell uptake. Zinc oxide (ZnO) NPs provide a potential solution. We have produced ZnO nanoparticles with different morphologies and defect emissions in the visible range using sol-gel chemistry. Several of the nanocomposites produced have a wide visible band emission. ZnO semiconductor nanocomposites have broad applications in many fields. They may be dispersed in polymers, functionalized for cell targeting, conjugated to drugs or proteins. We report a unique 600 nm emission peak, which is of interest for nano-bio interaction studies currently limited by autofluorescence in biologicals and the spectral overlap of common fluorescent dyes and proteins.

Tuneable conductivity at extreme electric fields in ZnO tetrapod-silicone composites for high-voltage power cable insulation

Resistive Field Grading Materials (RFGM) are used in critical regions in the electrical insulation system of high-voltage direct-current cable systems. Here, we describe a novel type of RFGM, based on a percolated network of zinc oxide (ZnO) tetrapods in a rubber matrix. The electrical conductivity of the composite increases by a factor of 108 for electric fields > 1 kV mm−1, as a result of the highly anisotropic shape of the tetrapods and their significant bandgap (3.37 eV). We demonstrate that charge transport at fields < 1 kV mm−1 is dominated by thermally activated hopping of charge carriers across spatially, as well as energetically, localized states at the ZnO–polymer interface. At higher electric fields (> 1 kV mm−1) band transport in the semiconductive tetrapods triggers a large increase in conductivity. These geometrically enhanced ZnO semiconductors outperform standard additives such as SiC particles and ZnO micro varistors, providing a new class of additives to achieve variable conductivity in high-voltage cable system applications.

Influence of thermal treatment on electronic properties of inkjet-printed zinc oxide semiconductor

ABSTRACT Additive manufacturing of electronic devices using inkjet printing provides a potential alternative approach in substitution for conventional electronic fabrication processes. However, the complex nature of inkjet printing involves the liquid deposition and film formation from the vaporization of solvent, which makes it different from film created by conventional deposition methods. Inkjet printing of zinc oxide (ZnO), which is a widely utilized semiconductor, produces polycrystalline film composed of nano-size grains, which could significantly influence the properties of printed film. In this study, low-temperature annealing was employed to treat inkjet-printed ZnO for UV photodetection application, and its influence on electrical properties was studied. Band bending was characterized using the Mott-Schottky plot which examines the charge distribution of the films. It is found that the annealing of inkjet-printed polycrystalline ZnO film has improved its electrical properties, which could be attributed to the reduction of band bending due to the merging of grains. The treatment also helps to reduce impurities of the film, such as zinc hydroxide complexes, which are common for solution-derived films. Hence, the study could pay the way for the improvement of electrical properties of inkjet-printed functional materials.

Impact of cobalt doping on structural and magnetic properties of zinc oxide nanocomposites synthesized by mechanical ball-milling method

A series of zinc oxide (ZnO) semiconductor nanocomposite samples doped with different concentrations of cobalt (Co) were successfully synthesized via simple and highly effective mechanical ball-milling method using suitable precursors. All doped nanocomposites crystallized in hexagonal wurtzite formation of ZnO. No alteration in the wurtzite structure, with no evidence of any segregated secondary phase(s) was detected with increasing doping concentrations. This result unambiguously verified the substitution of Zn2+ sites by Co2+ ions in the ZnO host lattice for different doping concentrations. Moreover, room temperature ferromagnetic behavior was observed in all doped nanocomposite samples in the reported work. Present study clearly shows that mechanical ball-milling is a facile, inexpensive, eco-friendly method to synthesize crystalline and magnetic Co doped ZnO nanocomposites for next generation spin-based devices.

Langmuir-Hinshelwood-Hougen-Watson model for the study of photodegradation properties of zinc oxide semiconductor nanoparticles synthetized by Peumus boldus

In this work zinc oxide nanoparticles (ZnO NPs) are synthesized using Peumus boldus extract for the degradation of methylene blue (MB). The NPs were characterized and the degradation results and experimental data were compared with the Langmuir-Hinshelwood-Hougen-Watson (LHHW) model taking into account an adsorption and reaction steps. The experimental degradation showed 96% degradation in 180 min and according to the model, the mass transfer is present but the reaction stage is dominat for the degradation kinetics. With these results it could be possible to design a larger-scale reactor.