Indium-doped Zinc Oxide Research Articles

Au-sensitized metal–organic framework-derived indium-doped zinc oxide for highly enhanced trimethylamine sensing

Preparation of a gas sensor capable of rapidly and accurately detecting trimethylamine is crucial for environmental monitoring, food safety and human health. In this study, Au-In-ZnO with an irregular nanoparticle structure was prepared using simple metal–organic-framework synthesis method and in-situ reduction process. The Au-In-ZnO sensor exhibited a high response of 260.2 to 100 ppm trimethylamine at 250 °C, which is 32 times higher than that of pristine ZnO (350 °C), with the optimal operating temperature lowered by 100 °C. Meanwhile, the sensor had a short response time (2 s), enabling it to quickly react to leaked trimethylamine during practical applications. Additionally, the sensor also possessed low detection limit (0.3 ppm, Rair/Rgas=2.0), high selectivity, excellent moisture resistance, good repeatability, and long-term stability. The mechanism of gas-sensitive properties enhancement was analyzed in combination with the conduction mechanism of hypervalent ions and the electronic and chemical sensitization of noble metals. This study provides a potential gas-sensitive material for the efficient measurement and rapid evaluation of trimethylamine.

Increase the efficiency of lead sulfide colloidal quantum dots solar cells by incorporating In2O3 and NiO interlayers

Substantial advancements have been made in PbS colloidal quantum dot solar cells (CQDSCs) by focusing on device architecture, manipulating band alignment, and refining the surface chemistry of colloidal quantum dots (CQDs). Nevertheless, creating an incredibly stable and efficient solar cell remains a challenging problem for researchers in this field. This study reveals that the efficiency of PbS CQDSCs can be improved by incorporating ultrathin In2O3 (between ITO electrode & indium-doped zinc oxide ETL) and NiO (between PbS-EDT HTL and Au electrode) nanocrystalline interlayers. The enhanced power conversion efficiency (PCE), which increases from 11.5 % to 13.6 %, is attributed to the improved surface smoothness and well-matched energy bandgap. Furthermore, following a heating period of 90 min at a temperature of 80 °C and 50 days of storage in the air, the solar cells containing these interlayers retained 98 % and 99 % of their initial efficiency, respectively. In distinction, the control device without these interlayers maintained only 85 % and 91 % of their initial efficiency under identical testing environments.

Society based photovoltaic application of dye sensitized solar cell of Indium doped ZnO photoanode using cactus fruit via solvothermal method

In this work, Indium doped zinc oxide nanoparticles with various molar concentrations were synthesized by solvothermal method. The prepared nanoparticles were analysis using characterization. The structural properties of X-ray diffraction (XRD) used to obtain the hexogonal structure of nanoparticles. The surface morphology of prepared nanoparticles was magnification by Field Emission Scanning Electron Microscope (FESEM), The optical bandgap and functional groups were obtained by Ultra-Violet Visible spectra and Fourier Transform Infrared spectroscopy. Then the fabrication of dye sensitized solar cell based on indium doped ZnO photoanode using cactus dye. The performance of J-V characterization demonstrate a high short-circuit photocurrent density of 2.83 mA/cm2 and open circuit voltage of 0.63with relevant solar cell efficiency of 0.92 % whereas DSSCs made from pure ZnO NPs exhibited a current density of 8.02 mA/cm2 with 0.19 % efficiency. To increase the light-harvesting efficiency, both the photoanode and photons absorption could be optimized and it good response for UV-region. From this reports dye and photoanode are suitable to increase the efficiency of solar cell.

In-doped ZnO films deposited by modified SILAR method for enhanced ethanol gas sensor application

The rapid and skillful detection of toxic gases is a crucial requirement for the advancement of gas sensors. In this study, we fabricated undoped and In-doped (1 %, 3 %, and 5 % by weight) ZnO films using a two-step modified SILAR deposition technique. The ethanol gas sensing properties of both undoped and In-doped ZnO films were examined across a range of operating temperatures (from room temperature, 27 °C–200 °C) and concentrations (1 ppm–50 ppm). Of all the films, those doped with 5 % Indium exhibited the most stable, reproducible, and highest response, achieving 86.27 % at 50 ppm ethanol at an operating temperature of 100 °C. Compared to the undoped ZnO films, all Indium-doped ZnO films demonstrated significantly shorter response times (17 s) and recovery times (19 s). The response of all the deposited films to various gases such as acetone, methanol, toluene, xylene, and formaldehyde was lower than their response to ethanol. The mechanism behind the enhanced sensing characteristics of the Indium-doped ZnO films is explored. Additionally, the impact of humidity on sensor performance was investigated. This study reveals that 5 % In-doped ZnO films hold great potential as materials for ethanol gas sensing applications.

Indium-doped ZnO nanoparticle effects on the optical and electrical characterization under dark and illumination of OFET: application for optoelectronics and nonvolatile memory devices

Indium-doped ZnO nanoparticle effects on the optical and electrical characterization under dark and illumination of OFET: application for optoelectronics and nonvolatile memory devices

Visible light-driven removal of Rhodamine B using indium-doped zinc oxide prepared by sol–gel method

Industrial dye contamination in wastewater poses significant environmental challenges, necessitating the development of efficient photocatalysts for degradation. In this work, we investigate the In doping effect in the photocatalytic activity of zinc oxide (ZnO) nanoparticles for effective RhB degradation. Indium-doped ZnO nanoparticles were synthesized via sol–gel method and x-ray diffraction (XRD) analysis revealed a wurtzite hexagonal structure, with the crystallite size being varying from 65 nm to 53 nm with the introduction of In content. XPS measurements on the 3% In-doped ZnO sample revealed distinct core level spectra for In 3d, Zn 2p, and O 1s regions, confirming the presence of indium, zinc, and oxygen. Brunauer–Emmett–Teller (BET) analysis revealed increased surface area and pore size, with specific surface areas escalating from 0.9 m²/g for pure ZnO to 10.1 m²/g for 3% indium-doped ZnO. Photocatalytic experiments exhibited significant RhB degradation, with degradation efficiencies reaching 93% for 3% indium-doped ZnO under visible light irradiation due to the effect of the presence of In, which causing light absorption enhancement, narrow the band gap and improve charge carrier separation. These findings underscore the potential of indium-doped ZnO nanoparticles as efficient and sustainable photocatalysts for wastewater treatment, offering a promising avenue to address environmental challenges associated with industrial dye-contaminated effluents.Graphical

Ultrathin Flexible Indium Tin Oxide‐Free Organic Solar Cells with Gradient Bilayer Electron Transport Materials

Ultrathin flexible organic solar cells (OSCs) have garnered widespread attention in wearable electronic devices for their lightweight and excellent conformability. Silver nanowires (AgNWs) are one of the most widely used bottom electrodes because of their high conductivity and transmittance. However, the high roughness of AgNWs on the flexible substrate exerts adverse effects on device performance. To address this critical issue, a bilayer electron‐transport‐materials (ETMs) strategy consisting of an indium‐doped zinc oxide (IZO) and a pristine ZnO is developed. The IZO is utilized as the first layer of ETM, which can effectively fill voids in AgNWs to form a high‐conductive composite electrode. The ZnO is used as the second layer of ETM, facilitating charge extraction. The ultrathin flexible OSCs prepared based on the gradient bilayer ETMs can achieve a power conversion efficiency (PCE) of 16.1%, associated with improved mechanical stability, showing a PCE retention of 93% after 10 000 bending cycles (R = 1 mm) and 82% under 1000 compression (30%)‐release cycling test. To the best of knowledge, it's one of the highest efficiency for ultrathin (less than 10 μm) flexible OSCs based on the solution‐processed electrodes. This work will provide a new avenue for fabricating high‐performance and mechanically robust ultraflexible ITO‐free OSCs.

Monitoring athlete health and performance using an electrochemical sensor based on zinc oxide nanorods

The goal of this work is to create highly sensitive and selective electrochemical sensors that can detect lactate, an essential substance in the body's anaerobic breakdown of carbohydrates, by utilizing lactate oxidase (LOx) and glutaraldehyde (GA)-modified indium-doped zinc oxide (ZnO) nanorods. Several structural investigations validated the effective immobilization of LOx and GA on the modified glassy carbon electrode (GCE) with indium-doped ZnO nanorods. Lactate was detected with the LOx-GA/In-doped ZnO biosensor, which showed linear range of 0.1–36 mM, sensitivity value of 0.73301 µA/mM, and quantification and detection limits of 2.7 μM and 0.8 μM, respectively. The biosensor also displayed stability, repeatability, and selectivity. The sensor demonstrated remarkable lactate recovery rates when applied to real serum and urine specimens from athletes. The serum samples ranged from 96.00% to 99.28% with a relative standard deviation (RSD%) of 3.77–4.25, and the urine samples from 94.00 to 98.58 with an RSD% of 3.55–4.62. These results point to the LOx-GA/In-doped ZnO/GCE sensor platform's potential for a range of biomedical uses.

Reliability of transparent conductive oxide in ambient acid and implications for silicon solar cells

Transparent conductive oxide (TCO) films, known for their role as carrier transport layers in solar cells, can be adversely affected by hydrolysis products from encapsulants. In this study, we explored the morphology, optical-electrical properties, and deterioration mechanisms of In2O3-based TCO films under acetic acid stress. A reduction in film thickness and carrier concentration due to acid-induced corrosion was observed. X-ray photoelectron spectroscopy and inductively coupled plasma emission spectrometry analyses revealed that TCOs doped with less-reactive metals exhibited enhanced corrosion resistance. The efficiency of silicon heterojunction (SHJ) solar cells with tin-doped indium oxide, titanium-doped indium oxide, and zinc-doped indium oxide films decreased by 10%, 26%, and 100%, respectively, after 200 ​h of corrosion. We also found that tungsten-doped indium oxide could effectively safeguard SHJ solar cells against acetic acid corrosion, which offers a potential option for achieving long-term stability and lower levelized cost of solar cell systems. This research provides essential insights into selecting TCO films for solar cells and highlights the implications of ethylene-vinyl acetate hydrolysis for photovoltaic modules.

Photodegradation of methylene blue dye using graphene oxide incorporated, post-transition metal doped zinc oxide thin films by spray pyrolysis

Photocatalytic activity of graphene oxide incorporated pure and metal doped zinc oxide thin films were studied against methylene blue dye under simulated solar irradiation. Thin films were deposited on a glass substrate using an automated spray pyrolysis technique at a temperature of 425 °C. Aluminium, gallium, and indium were the post-transition metals used for doping. Graphene oxide content in the precursor solution was fixed at 0.00375 g/l. The formation of the wurtzite structure of zinc oxide has been confirmed using structural analysis. The average crystallite size of all the thin film samples was found to be in the range of 45–55 nm. The morphology and elemental composition of the films were studied using scanning electron microscopy and energy-dispersive x-ray spectroscopy. The energy band gap of the material was determined from UV–vis-NIR spectroscopic measurements using Tauc’s plot and it is in the range of 3.25–3.28 eV. Photoluminescence spectra of the as-deposited films were recorded. Intensity of the near band emission at 395 nm was found to decrease upon metal doping, indicating a better photocatalytic property. All the films were used for heterogeneous photocatalysis and the indium doped zinc oxide thin film incorporated with graphene oxide was found to be a better catalyst with an efficiency of 94.9% for degrading methylene blue dye in 180 min.

Photocatalytic activity of indium doped zinc oxide seed layers and one dimensional nanorods under solar irradiation

Photocatalytic activity of indium doped zinc oxide seed layers and one dimensional nanorods under solar irradiation

Multi-tile zinc-oxide-based radiation-hard fast scintillation counter for relativistic heavy-ion beam diagnostics: prototype design and test

This contribution summarizes the design and performance test of a prototype radiation-hard fast scintillation detector based on the indium-doped zinc oxide ceramic scintillator, ZnO(In). The prototype detector has been developed for use as a beam diagnostics tool for high-energy beam lines of the SIS18 synchrotron at the GSI Helmholtz Center for Heavy Ion Research GmbH. The new detector consists of multiple ZnO(In) scintillating ceramics tiles stacked on the front and back sides of a borosilicate light guide. The performance of the detector was tested in comparison to a standard plastic scintillation detector with 300 MeV/u energy 40Ar, 197Au, 208Pb, and 238U ion beams. The investigated prototype exhibits 100% counting efficiency and radiation hardness of a few orders of magnitude higher than the standard plastic scintillation counter. Therefore, it provides an improved beam diagnostics tool for relativistic heavy-ion beam measurements.

Synthesis and characterization of indium-doped ZnO nanoparticles by coprecipitation method for highly photo-responsive UV light sensors

In this investigation, we employed a cost-efficient co-precipitation technique to synthesize nanostructures of Indium-doped ZnO, incorporating varying percentages of Indium (0.25 %, 0.5 %, 1 %, 2 %, and 4 %) into the ZnO lattice. These Indium atoms were introduced either by replacing oxygen (O2) or occupying tetrahedral interstitial spaces within the structure. The resultant materials exhibited an average crystal size ranging from approximately 5 to 10 nm and displayed a highly crystalline nature. The UV–visible spectroscopy of these synthesized materials, revealing an excitation spectrum spanning 380 nm–395 nm. Photoluminescence measurements showed two distinct emission peaks at 390 nm and 471 nm, originates from the recombination of the free excitons through an exciton-exciton collision process and the presence of defects or impurities in the In–ZnO nanostructures. Defects in the crystal lattice, such as oxygen vacancies or interstitial defects, can create energy levels within the bandgap. Subsequently, we evaluated the suitability of these Indium-doped ZnO nanostructures for light sensor applications. Response and recovery times to infrared (IR), visible, and ultraviolet (UV) light was recorded. Remarkably, the nanostructures exhibited exceptional response and recovery times, in UV light compared to their performance with IR and visible light. This significant performance of synthesized materials in UV light shows the cost-effective co-precipitation method in fabricating Indium-doped ZnO nanostructures for UV light sensing applications.

Enhanced photocatalytic activity of graphene oxide incorporated ZnO nanorods doped with post-transition metals

Photocatalytic activity of graphene oxide incorporated pure and selected post-transition metal doped zinc oxide nanorods were investigated for the degradation of methylene blue dye. Thin film seed layers were deposited on microscopic glass slides using an automated spray pyrolysis technique at a substrate temperature of 425 °C. Aluminium, gallium, and indium were the metals used for doping. Graphene oxide content in the precursor solution was fixed at 0.00375 g/L. Nanorods of the aforesaid transparent conducting oxide materials were grown by aqueous chemical growth technique, vertically over the respective as-deposited seed layers. Structural and optical properties of the nanorods were studied. Growth of the vertical nanorods was confirmed by scanning electron microscopy. All the nanorod samples were utilized as catalysts for repeated cycles of photocatalysis and the graphene oxide incorporated indium doped zinc oxide nanorod was found to be an efficient and stable photocatalyst by degrading 96.1 % of methylene blue dye in 180 min under simulated solar irradiation.

Gamma-ray irradiation and the alterations in photoluminescence emissions of undoped and indium-doped ZnO single crystals

We investigate the effect of gamma-ray irradiation on the ultraviolet (UV) emissions of undoped and indium-doped zinc oxide (ZnO) single crystals. After irradiation, UV emission broadening is observed which is attributed to shallow defects induced in the strained crystal lattice. These defect states play a role in shortening the UV emission lifetimes, and the difference is found to be more pronounced in the doped ZnO crystal. The underlying phenomena responsible for the observed changes in the photoluminescence properties are discussed.

Tear-Based Electrochemical Sensor for Detecting Complement III Protein Using Indium-Doped Zinc Oxide Nanofibers With Superior Dielectric Properties

Tear-Based Electrochemical Sensor for Detecting Complement III Protein Using Indium-Doped Zinc Oxide Nanofibers With Superior Dielectric Properties

Indium Doped ZnO Thin Film Using Spin Coating for TCO Application

Indium doped zinc oxide (IZO) thin films were fabricated on glass substrates by spin coating technique for transparent conducting oxide (TCO) application. Effect of different indium concentration on their properties were investigated. IZO thin films were deposited on glass substrate using sol-gel spin coating techniques using zinc acetate dihydrate, indium nitrate hydrate, absolute ethanol, and monoethanolamine (MEA). The concentration of indium was varied at 1, 3, 4, and 5 at.%. to study the characteristics of the IZO thin films in terms of structural, optical, and electrical, which is to achieve high visibility of IZO as transparent conducting oxide. The UV-Vis examination of IZO thin film observed that the highest transparency of thin films was IZO with indium concentration of 4% which shows a75.6%. The optical band gap were calculated using Tauc’s plot and was found to be in the range between 3.10 to 3.2 eV. For electrical properties, the lowest resistivity was observed for IZO thin film at 4% doping concentration with a value of 3.25 Ωcm, while the highest resistivity was observed at IZO thin film at 1% which is 15.26 Ωcm.

Investigation on structural, optical and electrical properties of Zn doped indium oxide thin film for gamma dosimetry

Zinc-doped indium oxide thin film was deposited on the glass substrate using the spray pyrolysis method at a substrate temperature of 723K for various Zn concentrations in the range of 2–10 at%. The obtained film confirmed a polycrystalline cubic structure with a shift in preferred growth orientation from (400) to (222) on higher doping levels. The morphological study also exhibited a microstructure change which corroborates with the XRD spectra. Moreover, surface morphology has a great influence on the physical properties of the film. Cubic crystallization of doped In2O3 with no impurity phase and the presence of oxygen vacancies is confirmed by Raman spectra. It also confirms the In substitution by Zn. Optical transmittance decreased with doping which is supported by a decrease in bandgap energy from 3.68 to 3.5. The Refractive index is estimated using three different models with the Herve-Vandamme model showing the least deviation. Urbach energy shows an inverse relation with energy band gaps. Violet-blue emission was observed in the photoluminescence spectra. Zn doping also had an influence on the electrical properties of the material. Thermoluminescence spectroscopy validates Zn-doped In2O3 films' suitability for gamma dosimetry. XPS peak intensity corresponds to oxygen vacancies observed to be higher for Zn doped sample relative to undoped, indicates the formation of defects after doping. The resistivity increased up to 6 at% and then decreased, which can be due to the preferred orientation change to (222) at higher dopant concentrations. From the investigation, it is concluded that 4% Zn doped In2O3 can be used for sensor applications due to its good structural, optical and electrical properties and also lesser defects.

Controlled Synthesis and Enhanced Gas Sensing Performance of Zinc-Doped Indium Oxide Nanowires.

Indium oxide (In2O3) is a widely used n-type semiconductor for detection of pollutant gases; however, its gas selectivity and sensitivity have been suboptimal in previous studies. In this work, zinc-doped indium oxide nanowires with appropriate morphologies and high crystallinity were synthesized using chemical vapor deposition (CVD). An accurate method for electrical measurement was attained using a single nanowire microdevice, showing that electrical resistivity increased after doping with zinc. This is attributed to the lower valence of the dopant, which acts as an acceptor, leading to the decrease in electrical conductivity. X-ray photoelectron spectroscopy (XPS) analysis confirms the increased oxygen vacancies due to doping a suitable number of atoms, which altered oxygen adsorption on the nanowires and contributed to improved gas sensing performance. The sensing performance was evaluated using reducing gases, including carbon monoxide, acetone, and ethanol. Overall, the response of the doped nanowires was found to be higher than that of undoped nanowires at a low concentration (5 ppm) and low operating temperatures. At 300 °C, the gas sensing response of zinc-doped In2O3 nanowires was 13 times higher than that of undoped In2O3 nanowires. The study concludes that higher zinc doping concentration in In2O3 nanowires improves gas sensing properties by increasing oxygen vacancies after doping and enhancing gas molecule adsorption. With better response to reducing gases, zinc-doped In2O3 nanowires will be applicable in environmental detection and life science.

Improvement of structural, optical and electrical properties of indium-doped ZnO nanoparticles synthesized by Co-precipitation method

Improvement of structural, optical and electrical properties of indium-doped ZnO nanoparticles synthesized by Co-precipitation method