Yttrium Oxide Films Research Articles

Stress in Y2O3 thin films deposited by radio-frequency magnetron and ion beam sputtering

Thin films of yttrium oxide have been deposited onto substrates of zinc sulfide by rf magnetron and ion beam sputtering. The measured magnitude and the sign of the stresses in these films (interferometric Newton rings method) vary between 7 and 21×109 dyn/cm2 and are found to be compressive. The relationship of the measured stress to various deposition parameters is explored. It is proposed that these compressive film stresses increase the flexural strength and apparent indentation fracture toughness of the ZnS substrates.

Changes in composition and deposition rates in the reactive sputtering of copper, titanium, and yttrium exposed to oxygen

Copper, titanium, and yttrium oxide films were prepared by reactive dc magnetron sputtering in an Ar-O2 plasma and the deposition rates and compositional changes were measured as a function of dc power. The deposition rates of Cu increased monotonically with increasing dc power, while those of Ti and Y increased abruptly by more than one order of magnitude at a critical dc power (Pc). Abrupt compositional changes of metal and oxygen in the thin films were also observed for Ti and Y at Pc. The compositional change curve for Cu had a plateau in dc power dependence. These results correlate with the differences of heat of oxide formation among Cu, Ti, and Y.

Studies of yttrium oxide films prepared by RF magnetron sputtering

Films of yttrium oxide (Y2O3) were deposited on Si substrates from a Y2O3target by RF magnetron sputtering. MIS capacitors in the form of Al and Y2O3(400 ̇)-Si were then fabricated. The leakage current density was about 10−6 A/cm2 at 1.3 × 106 V/cm, and the breakdown field of the films was about 2.75 × 106 V/cm. The dielectric constant of the sputtered Y2O3 was found to be about 12-12.7.

Films of rare earth oxides formed by electron beam evaporation

Rare earth oxides can effectively be deposited by electron beam evaporation. The films thus formed are dense and non-porous and adhere to various metal substrates. The strength of the bond between the films and the substrates is greatly affected by the treatment of the substrate prior to deposition (the substrate needs to be roughened). The structure of the films is affected to a small degree by the substrate condition and deposition parameters. The orientation of the films is dependent on the substrate temperature. The characteristics of erbium oxide and yttrium oxide films are presented.

Antireflection coatings on lithium niobate waveguide devices using electron beam evaporated yttrium oxide

We report the first antireflection coatings for fibre pigtailed Ti:LiNbO3 waveguide devices optimised for the 1.55 ?m wavelength range. The coatings are single-layer, electron-beam-evaporated yttrium oxide films. A reflection of ?35 dB, sufficiently low for operation in conjunction with single-frequency lasers, has been demonstrated.

Reaction between thin yttrium oxide and chromium films in the presence of oxygen

Reaction between thin yttrium oxide and chromium films in the presence of oxygen

Conduction, permittivity, internal photoemission, and structure of electron-beam-evaporated yttrium oxide films

A study has been made of thin electron-beam-evaporated yttrium oxide films. The oxide structure was found to be polycrystalline, with grain sizes of the order of 100 Å, by electron microscopy. dc conduction measurements were made and a Frenkel-type of conduction mechanism was proposed. Step response and bridge dielectric loss measurements were compared. Internal photoemission was used to obtain metal/oxide barrier heights of 3.14 and 3.72 eV in an Al-Y2O3-Al structure.

Radio frequency dielectric dissipation measurements on yttrium oxide thin films

The dielectric dissipation factor (tan δ) of evaporated thin film Al-Y 2-O 3-Au capacitors has been measured in the frequency range 1 kHz-40 MHz. The yttrium oxide films (≈ 5000 Å) were fabricated by the direct electron-beam evaporation of 99.9% Y 2O 3 powder. The geometry of these capacitors (≈ 40 pF) deposited on alumina substrates provided large contact pads for direct attachment to the measuring bridges. Lead inductance was minimal while lead and contact resistance was less than 0.2 ω. Tan δ measurements were made at 20°C with a capacitance bridge, a Wayne Kerr bridge and a Q-meter at appropriate frequencies. At 1 kHz, tan δ values of various specimens varied from 0.004–0.009. These values decreased rapidly with increasingly frequency, however, to a resistance-corrected constant value tan δ≦0.004 over the range 100 kHz-40 MHz.

Yttrium oxide films prepared by electron-beam evaporation

Yttrium oxide films prepared by electron-beam evaporation

Some dielectric properties of electron-beam evaporated yttrium oxide thin films

Thin films of yttrium oxide have been fabricated by the direct electron-beam evaporation, in an oxygen atmosphere, of 99.9% yttrium oxide powder. Such films, ranging in thickness from about 2000 Å to 15,000 Å, have been observed to be quite stable and free of pinholes over areas as large as 0.5 in. × 0.5 in. At 1000 Hz and 25 °C the lowest value of dielectric dissipation factor (tan δ) obtained was 0.00255, decreasing to a value of 0.0024 at 100 kHz. Bridge measurements on such films forming capacitors of the type AlY 2O 3Au further yielded an average dielectric permittivity value ε′ = 13.5 ± 1.5 and a temperature coefficient of capacitance of + 320 p.p.m./°C. Typical breakdown field strengths were in the order of 2.8 × 10 6 volt/cm for such capacitors as large as 0.065 μF, whilst the measured resistivity of the dielectric was estimated to be > 2 × 10 14 Ω cm .