Highly sensitive, sophisticated and rapidly responding/recovering NO2 sensors are of a pressing demand across various modern applications. However, traditional metal oxide semiconductors (MOSs), such as In2O3, often grapple with issues such as diminished sensitivity and tardy responding/recovering. To address these challenges, we present a novel, simultaneous enhancement strategy centered around Ni atomic clusters (NiAC) integrated into In2O3 yolk-shell microspheres. This innovative structural and compositional design not only enhances NO2 adsorption thermodynamics but also improves kinetics reacting rate. The optimized heterostructured NiAC-In2O3 exhibits exceptional NO2 sensing performances with high response (454.62 to 10 ppm NO2), instantaneous responding/recovering dynamics (1/3 s), and an impressively ultra-low detection limit (1 ppb) at 200 ℃. Reaction kinetics calculation, finite element method (FEM) simulations and further validation through In-situ diffuse reflection infrared Fourier transform spectroscopy (In-situ DRIFTS) and temperature-programmed desorption (TPD) analyses confirms the accelerated NO2 adsorption/desorption dynamics, enhanced NO2 dissociation and trace-concentration NO2 molecule capturing capability attributed to NiAC. Considering these merits, The fabricated NiAC-In2O3 ensures high-precise, instantaneous, ppb-level NO2 detections.
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