The recent development of XPS instrumentation with near-micron spatial resolution has advanced the capability of elemental and chemical-state imaging accompanied by small-area analysis (down to 15 µm). In this paper, the combined use of X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) at enhanced spatial resolution is shown to have significantly improved the understanding of interfacial delamination and related problems encountered in the production of electronic devices in the field of microelectronics. An example of the application of surface analysis for ITO/Mo adhesion problems will be presented. The mathematical procedure using principal component analysis (PCA) in the reduction of noise in XPS images will also be described. The dramatic improvements in the image contrast and chemical component determination from multispectral image data sets will be presented. This study is intended to explore the contributions given by advanced surface analysis tools to solve real-world problems. Copyright © 2007 John Wiley & Sons, Ltd.