Window Layer Research Articles

Exploring the impact of substrate placement on Cu3N thin films as a solar cell window layer: Structural and optical attributes

Copper nitride (Cu3N) thin films have garnered significant interest due to their exceptional stability, corrosion resistance, and optical qualities. In this research, Cu3N thin films were produced through reactive dc magnetron sputtering (dcMS) in a nitrogen/argon atmosphere on glass substrates without any external heat treatment. The study examined the effects of substrate positions from the cathode target, and subsequently film thicknesses, on the structure and optical properties of Cu3N thin films. Different methods were employed to examine the structural and optical characteristics of the films, including X-ray diffraction (XRD), scanning electron microscopy (SEM), and ultraviolet-visible-near infrared (UV–vis–NIR) spectrophotometry in the wavelength range of 400–2500 nm. The XRD patterns indicated a cubic crystal structure for the films with a dominant orientation along the (100) plane, while SEM images displayed uniform and smooth surface morphologies for the films. The UV–vis–NIR spectrophotometry findings demonstrated transmittance above 70% in the visible region for the films, and the optical bandgap values ranged between 2.29 and 2.49 eV. The optical conductivity (σ), electrical susceptibility (χc), and optical electronegativity (ηopt) have been calculated. Furthermore, the nonlinear optical qualities of Cu3N thin films were discussed, including the nonlinear refractive index (n2), the nonlinear optical susceptibility, and the nonlinear absorption coefficient (βc). The Cu3N thin films showed promising optical properties, suggesting their potential use as a window layer in solar cell technology.

A new conformationally symmetrical calix[4]pyrrole based supramolecular systems for liquid crystalline and window layer solar cell applications.

A newly symmetrical liquid crystalline compounds (CPB1-CPB4) based on calix[4]pyrrole as a central rigid core were synthesized via esterification reaction. All four compounds exhibit columnar hexagonal phase over a higher mesophase temperature range and stabilized mesophase upto room temperature. The thermal behaviors and optical textures were identified by using differential scanning calorimetry, Polarizing optical microscopyand the molecular organization of the compound in the mesogenic state is confirmed by X-ray diffraction technique. The molecular system based on calix[4]pyrrole core with symmetrical nature exhibited columnar type self-assembly at room temperature. All four supramolecules with different side spacer showed higher thermal stability. Based upon the optimization, compound CPB2 istested in accordance with the optical window layer in thin films solar cell devices. The calix[4]pyrrole functionalized supramolecular liquid crystalline compound based thin films showed suitable transmittance, optical energy band gap together with absorbance and extinction. The linear dependence of current on the voltage demonstrated Ohmic behavior of the CPB2 films. The surface morphology to the developed samples designated nearly uniform deposition of the CPB2 thin films together with grain growth. The findings warrant suitability of the films to implicate these as an eco-friendly optical window layer in thin films based solar cells.

Effect of annealing temperature on photocalaytic dye degradation study of TiO2 nanoparticles prepared by non-conventional sol-gel technique

Titanium dioxide (TiO2) nanoparticles (NP) find several applications starting from window layer of solar-cell to dye degradation due to its varied optical and electrical properties. In this paper a low cost synthesis method of TiO2 nano powder is reported using non-conventional sol-gel method and used for dye degradation study. Here the starting material used was TiO2 micropowder instead of alkoxide. The prepared nano-powders were annealed at various temperatures for the variation in physical properties. The structural, morphological and photocatalytic properties of the prepared samples were studied. The XRD confirm the crystalline phase of all prepared samples and also shows the variation of crystallite size with annealing temperature. The morphological characterization by SEM confirms the uniform spherical shape of the grains. The grain size significantly decreases due to annealing. The prepared samples were used for methylene blue (MB) dye degradation study using an indegeneously built UV-reactor and compared with the degradation rate of the same dye by using raw powder. It is observed that there is four times enhancement in the degradation rate with the prepared samples at 500 degree annealing temperature in comparison to the procured raw powder.

Study of electrodeposited zinc selenide (ZnSe) nanostructure thin films for solar cell applications

Electrodeposition approach was used to grow the ZnSe nanostructure on indium doped tin oxide (ITO) layered glass substrate. Due to low cost and high degree of absorption, binary semiconductors made from chalcogens such as CdSe, ZnO, ZnS and ZnSe provide significant features in photovoltaic and photoelectrochemical cells. The structural and morphological properties of deposited nanostructures were examined by XRD and SEM. X-ray diffraction analysis informed about cubic structure with a preferred orientation and the calculated crystal size was approximately 75 nm. The optical properties were examined by UV–visible absorbance spectra and optical band gap was measured using Tauc plot. The deposited ZnSe nanostructure has direct band gap ∼2.52 eV at room temperature which was less than 2.82 eV which is the band gap of bulk ZnSe. Investigations also focused on additional qualities like excellent optical transmission, low electrical resistance, and good photosensitivity. Because of the presence of defect states in the deposited nanostructure, the band gap energy is smaller than that of bulk material. The current-voltage characteristics were measured in dark mode and under illumination of normal tungsten filament light and LED. There was notable change in the current for both normal light and LED in comparison to dark mode. The findings of all the characterization methodologies suggested that for the production of solar cells low cost ZnSe may be used as an alternative environment friendly Cd-free window layer.

Numerical analysis of Al/Gr/ETL/MoS2/Sb2S3/Ni solar cell using non-toxic In2S3/SnS2/ZnSe electron transport layer

In this study, Molybdenum disulfide (MoS2) based thin film solar cells (TFSCs) of the structure Al/Gr/ETL/MoS2/Sb2S3/Ni have been simulated using SCAPS-1D software. Due to their remarkable properties, three Cd-free and non-toxic (In2S3, SnS2, and ZnSe) electron transport layer (ETL) materials were suggested for MoS2-based TFSCs. The effect of various layer parameters on the performance of the cells was investigated for various ETL materials. The considered parameters are the MoS2 absorber layer thickness, the carrier density and thickness of the ETL, and the ETL/MoS2 interface defect density, as well as the impact of the working temperature, series resistance, and shunt resistance. The simulation results show that the highest power conversion efficiency is achieved for the MoS2 absorber layer thickness of 1.0 µm, and the thickness and carrier density of different ETLs of 0.05 µm and 1016 cm-3, respectively. We found that the defect density of the ETL/MoS2 interface should be controlled under 1012 cm-2. The optimized power conversion efficiencies of MoS2-based TFSCs are found by simulation 27.88%, 28.22%, and 28.29% for the cell with In2S3, SnS2, and ZnSe ETL, respectively. Among the three ETL materials used, zinc selenide (ZnSe) shows the best results due to its wider band gap. We have found that the cells with the FTO window layer show slightly better performance than those with the graphene. Maximum photovoltaic efficiency of 28.54% has been achieved for the solar cell of the structure Al/FTO/ZnSe/MoS2/Sb2S3/Ni. The results of simulations reveal that high-efficiency MoS2 solar cells with non-toxic (In2S3, SnS2, and ZnSe) ETLs can be obtained. Overall, the numerical simulation conducted in this study could contribute to the manufacture of Cd-free non-toxic and highly efficient MoS2-based solar cells.

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of ZnMgO for Efficient CZTS Solar Cells

Cu2ZnSnS4 (CZTS) solar cells are an emerging photovoltaic technology owing to their earth abundance, all-dry processability, and environmental friendliness. Further power conversion efficiency enhancement of the Cd-free CZTS device necessitates the substitution of traditionally used intrinsic ZnO by an alternative wide-band-gap window layer. Here, we demonstrate deposition of a ZnMgO window layer of controlled thickness, composition, and electro-optical properties by atomic layer deposition (ALD). The amorphous ZnMgO deposited at low temperature down to 100 °C using plasma-enhanced ALD showed smoothness superior to that of high-temperature plasma-enhanced ALD and doping density comparable to that of high-temperature thermal ALD but with a much lower electron affinity. The overall charge carrier recombination at the CZTS/ZnSnO/ZnMgO region was reduced due to the optimized ZnMgO conduction band minimum, thus reducing the VOC value and fill factor loss for a CZTS solar cell. In addition, the thinner- and larger-band-gap ZnMgO was believed to reduce the parasitic absorption, improving the JSC value and boosting the efficiency to 10%.

Theoretical investigation of silicon thin film solar cell for improving short and long wavelength response

Theoretical investigation or numerical simulation of performance of a solar cell can provide useful information to maximize power conversion efficiency. In that respect we carried out a set of numerical simulation using AFORS-HET simulation program. Separately the optical absorption of the individual layers of thin film solar cell was analyzed. Current-voltage characteristic curve of a reference cell (Cell-A) was used as the starting device. The power conversion efficiency (PCE) of the reference device was 8.85% with short circuit current density (Jsc) of 15.43 mA/cm2 and fill factor (FF) of 68.3%. After suitable optimization the PCE of this device (Cell-B2) improves to 11.59% (Jsc and FF became 13.0 mA/cm2 and 87% respectively). The results show that the effective optical absorption in the active layer can be improved significantly by optimizing the device structure. The short wavelength response can be improved by reducing the parasitic optical absorption of the doped window layer, while the long wavelength response improves by raising effective absorption length of the active layer. Furthermore, optimum thickness of the active layer, for the highest possible PCE, is found to be dependent upon its defect density.

Design and numerical analysis of CIGS-based solar cell with V2O5 as the BSF layer to enhance photovoltaic performance

Copper indium gallium selenide (CIGS)-based solar cells have exhibited greater performance than the ones utilizing cadmium telluride (CdTe) or hydrogenated amorphous silicon (a-Si: H) as the absorber. CIGS-based devices are more efficient, considering their device performance, environmentally benign nature, and reduced cost. In this article, we proposed a potential CIGS-absorber-based solar cell with an FTO/ZnSe/CIGS/V2O5/Cu heterostructure, with a V2O5 back-surface field (BSF) layer, SnO2:F (FTO) window layer, and ZnSe buffer layer. Using the solar cell capacitance simulator one-dimensional simulation software, the effects of the presence of the BSF layer, the thickness, bulk defect density, and acceptor density of the absorber layer, buffer layer thickness, interfacial defect density, device resistance, and operating temperature on the open-circuit voltage, short-circuit current, fill factor, and efficiency, as well as on the quantum efficiency and recombination and generation rate, of the device have been explored in detail. The simulation results revealed that only a 1 μm-thick-CIGS absorber layer with V2O5 BSF and ZnSe buffer layers in this structure offers an outstanding efficiency of 31.86% with a VOC of ∼0.9 V. Thus, these outcomes of the CIGS-based proposed heterostructure provide an insightful pathway for fabricating high-efficiency solar cells with performance more promising than the previously reported conventional designs.

Modelling the Light Scattering Behavior of Transmission-Mode GaAs Photocathode Under the AlGaAs Window Layer Rough Surface

To improve the understanding of the optical image resolution of transmission-mode GaAs photocathode, by establishing the surface scattering analysis model of AlGaAs window layer, we have researched the effect of the surface height distribution variance σ on scattering surface transfer function (STF) and point spread function (PSF) of transmission-mode GaAs photocathode. The simulation results show that the decrease of surface height distribution variance σ is beneficial to improve the optical image resolution. This improvement is mainly attributed to the decrease in input light energy attenuation and spatial diffusion caused by smaller surface height distribution variance σ, and thus the signal to noise ratio of scattering degraded optical image is increased.

(002) oriented ZnO and ZnO:S thin films by direct ultrasonic spray pyrolysis: A comparative analysis of structure, morphology and physical properties

In this study, we deposit sulfur incorporated ZnO thin films (ZnO:S) by ultrasonic deposition and analyze changes in the structure, morphology, optical and electrical properties of the films in comparison with the pristine ZnO thin films. Further, electronic band structures of ZnO and (ZnO:S) were theoretically calculated using DFT-VASP method. ZnO and (ZnO:S) thin films formed at different conditions showed hexagonal crystal structure with crystallites of 30–40 nm in size fully oriented along [002] direction perpendicular to substrate. The optical band gap of ZnO was 3.2 eV which was reduced to 2.8 eV due to sulfur incorporation. Vacuum annealed ZnO showed a very low sheet resistance of 67 Ω/□ and the value was increased to 470 Ω/□ in ZnO:S films, nearly metallic behavior. Hall effect measurements confirmed the n-type conductivity with a maximum carrier concentration of 5.6 × 1020 cm−3. These films can find potential applications as window layers with improved charge extraction contacts for solar cell applications.

Flexible and transparent thin-film light-scattering photovoltaics about fabrication and optimization for bifacial operation

Flexible and transparent thin-film silicon solar cells were fabricated and optimized for building-integrated photovoltaics and bifacial operation. A laser lift-off method was developed to avoid thermal damage during the transfer of light-scattering structures onto colorless polyimide substrates and thus enhance front-incidence photocurrent, while a dual n-type rear window layer was introduced to reduce optical losses, facilitate electron transport for rear incidence, and thus enhance performance during bifacial operation. The introduction of the window layer increased the rear-to-front power conversion efficiency ratio to ~86%. The optimized bifacial power conversion efficiency for front and rear irradiances of 1 and 0.3 sun, respectively, equaled 6.15%, and the average transmittance within 500–800 nm equaled 36.9%. Additionally, the flexible and transparent solar cells fabricated using laser lift-off exhibited good mechanical reliability (i.e., sustained 500 cycles at a bending radius of 6 mm) and were therefore suitable for building-integrated photovoltaics.

Energy saving performance testing of vacuum water flow window under hot summer and cold winter climate

By applying vacuum glazing (VG) to water flow window, a novel vacuum water flow window (VWFW) is raised in the current study. Its advantages in reducing thermal transmission through windows and enhancing thermal utilization against common double layer water flow window (DWFW) and triple layer water flow window (TWFW) are tested in a hot summer and cold winter climate. The impacts on room heat exchange and water pre-heating performance, as well as the thermal utilization efficiency are compared. In cooling season, room heat gain through the VWFW is found reduced greatly comparing to DWFW, the reduction is in the range of 6%–38%. While those of VWFW and TWFW are comparable because of the high supply water temperature. The other benefit of VWFW is the increased water heat gain. A higher water heat gain efficiency in the range of 34%–70% is achievable with VWFW, this is 7%–30% and 3%–12% higher than those of DWFW and TWFW. In heating season, the VWFW is advantageous in reducing heat loss to ambient and increasing the thermal utilization efficiency. This is more promising under the cloudy day and higher supply warm water temperature conditions.

SCAPS simulation of novel inorganic ZrS2/CuO heterojunction solar cells

ZrS2 is transition metal dichalcogenides (TMDCs) which is believed one of the most talented applicants to fabricate photovoltaics. Therefore, we present here for the first-time numerical simulation of novel inorganic ZrS2/CuO heterojunction solar cells employing SCAPS-1D. The influence of the thickness, carrier concentration, and bandgap for both the window and absorber layers on the solar cell fundamental parameters was explored intensely. Our results reveal that the solar cell devices performance is mainly affected by many parameters such as the depletion width (Wd), built-in voltage (Vbi), collection length of charge carrier, the minority carrier lifetime, photogenerated current, and recombination rate. The η of 23.8% was achieved as the highest value for our simulated devices with the Voc value of 0.96 V, the Jsc value of 34.2 mA/cm2, and the FF value of 72.2%. Such efficiency was obtained when the CuO band gap, thickness, and carrier concentration were 1.35 eV, 5.5 µm, and above 1018 cm−3, respectively, and for the ZrS2 were 1.4 eV, 1 µm, and less than 1020 cm−3, respectively. Our simulated results indicate that the inorganic ZrS2/CuO heterojunction solar cells are promising to fabricate low-cost, large-scale, and high-efficiency photovoltaic devices.

Manufacture of different oxides with high uniformity for copper zinc tin sulfide (CZTS) based solar cells

Herein, we investigate different oxides layers: Zinc Oxide (ZnO), Nickel Oxide (NiO), Titanium Oxide (TiO2), and Copper Oxide (CuO), which are effective materials for Copper Zinc Tin Sulfide (CZTS) based solar cells due to their excellent electrical and optical properties. The different oxide films were prepared using spray pyrolysis as a low-cost technique. Then, the films were characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and UV–Visible to examine different properties. The XRD pattern showed that the different oxides are polycrystalline. ZnO exhibits a hexagonal wurtzite structure, and NiO is cubic. For the TiO2, (101) and (004) peaks have been identified, corresponding to the tetragonal anatase phase. CuO showed diffraction peaks corresponding to the monoclinic structures. The SEM results revealed that the deposited films consist of crystals with low crystallinity for NiO and good crystallinity for the rest oxides. The band gap was calculated from the UV–visible measurement. We obtained 3.26 eV, 3.34 eV, 3.2 eV, and 1.7 eV for ZnO, NiO, TiO2, and CuO respectively. The performance of the CZTS-based solar cell was checked by using the simulator SCAPS. ZnO and TiO2 were used as window layers where CZTS efficiencies are 24.40% and 24.54%, respectively. These findings show that ZnO and TiO2 films can be produced by low-cost techniques such as spray pyrolysis to be used as windows and electron transport layers for CZTS-based solar cells.

Preparation and characterization of CZTS thin films by vacuum-assisted spray pyrolysis and fabrication of Cd-free heterojunction solar cells

The quaternary chalcogenide material Cu2ZnSnS4 (copper zinc tin sulphide [CZTS]) has received much attention owing to its excellent photovoltaic conversion properties. We report the deposition of CZTS thin films by vacuum spray pyrolysis and explore the structural, elemental, optical and electrical properties and its use as an absorber layer in the fabrication of a cadmium-free solar cell device. The thin films were deposited at various substrate temperatures ranging from 325 °C to 400 °C using the vacuum spray pyrolysis technique. Structural analysis shows a crystalline nature with a CZTS kësterite phase formed at 375 °C. FESEM analysis reveals the presence of coral-reef-like morphology. XPS measurements were carried out to confirm the elemental composition. UV–vis measurements indicate that the optical band gap of the as-deposited films is 1.5 eV with a high absorption coefficient of 105 cm−1, which is close to the ideal value for an absorber layer. Hall effect measurement confirms the p-type nature of the samples. A simple heterojunction is fabricated with a device structure <ITO/Al:ZnO/CZTS/Ag> using CZTS as the absorber layer and Al:ZnO as the window layer. The estimated solar cell parameters are V oc = 0.85 V, I sc = 16.68 mA, fill factor = 36.54% and efficiency, η = 2.87%.

Flexible and transparent MXene-platformed ultrafast photodetector for encrypted signal communication in self-powered operation

The record-high responsivity of 0.34 A W−1 is achieved by flexible and transparent Ti3C2Tx-platformed photodetectors (PDs) in self-powered operation. Transparent technology is suitable for future human electronic interface. The Ti3C2Tx/3D semiconductor (Tx = –F, –OH, –O, –Cl) structure has gained considerable attention in the design of high-performance optoelectronic devices. In particular, the unique mechanical and hydrophilic properties of Ti3C2Tx are favored for large-scale flexible photodetectors. However, the self-powered operation and transparency have remained unexplored for Ti3C2Tx/3D semiconductor-based flexible PDs. To access portable and implantable electronic devices, Ti3C2Tx was comprehensively utilized as an active electrical window and charge-transporting layer for transparent PDs. Density functional theory revealed the better charge-transporting channel due to the Ti3C2Tx-functional layer, resulting in the elevated pyro-phototronic current of Ti3C2Tx/Al2O3/ZnO/Ti3C2Tx/ITO/polyethylene terephthalate (PET) PDs. Based on the ultrafast photo-response of the PD (8 μs), an optically transparent (> 68 %) communication system was developed. The flexible and transparent PD (TPD) can process the incident Morse codes of encrypted optical signals to text (“MXENE TPD”) information effectively. This study combines the transparency and self-reliant characteristics into a wearable MXene/bulk semiconductor-based PD, exhibiting great potential for applications in energy-efficient imaging, communication, and health monitoring systems.

Performance simulation of solar cell based on AZO/CdTe heterostructure by SCAPS 1D software

Simulation and analysis of solar cells based on the heterojunction of zinc oxide doped with aluminum (AZO) and cadmium telluride (CdTe) with the structure (Al/AZO/CdTe/NiO/Ni) using the Simulator of the capacitance of solar cells - 1 dimension (SCAPS-1D) has been presented in this paper. AZO is used as a window layer and Nickel oxide (NiO) has been introduced as a hole transport layer (HTL). Through the software, the effect of thickness, absorber (CdTe), and window (AZO) layers carrier concentration, operating temperature, and resistances (series and shunt) have been studied. Simulation results show that the solar cell performance can be greatly improved by adjusting the layer's thickness and carrier concentration, obtaining optimal values of 10 nm and 1018cm−3 for the AZO layer, while for the CdTe layer they were 2 μm and 1015cm−3. The optimum series and shunt resistances are in the range of 1–3 Ωcm2 and 1800–2200 Ωcm2 respectively. A maximum power conversion efficiency (PCE) of 14.2% is achieved with an open circuit voltage (Voc) of 0.74 V, short circuit current density (Jsc) of 26.15 mA/cm2 and a fill factor (FF) of 72.83%, this shows AZO potential to be considered as an interesting material to replace CdS window layer.

A comprehensive photovoltaic study on tungsten disulfide (WS2) buffer layer based CdTe solar cell

Transition metal di-chalcogenides (TMCDs)-Tungsten disulfide (WS2) exhibit excellent optoelectronic properties such as suitable bandgap, high absorption coefficient, good conductivity, high carrier mobility, etc. to be used as a photovoltaic material for thin-film solar cells. In the present work, we have replaced the traditional buffer CdS and ITO/ZnO window layer in CdTe solar cells with the non-toxic, earth-abundant WS2 buffer and SnO2 window layer, respectively. The SCAPS-1D solar simulator is used to investigate the potentiality of WS2 as buffer material in CdTe solar cells. This numerical study provides a comparison of the performances between the proposed structure: SnO2/WS2/CdTe/Au and the baseline structure: ITO/ZnO/CdS/CdTe/Au. The impacts of the charge carrier generation rate, spectral response, current-voltage characteristics, bulk defect density, defect density at buffer/absorber interface, operating temperature, and capacitance-voltage characteristics on the solar cell performance parameters have also been analyzed. The tolerance level of defect density in WS2 bulk and WS2/CdTe interface are found to be 1017 cm−3 and 1012 cm−3, respectively. The temperature study reveals the poor structural robustness and thermal stability of the proposed cell. The conversion efficiency of the proposed cell has found to be 20.55% at the optimized device structure. Nevertheles, these findings may provide an insight to fabricate viable, environment friendly, and inexpensive CdTe thin-film solar cells.

Fabrication and study of (p-Si/CdTe/V2O5/SnO2) solar cell

This article discusses a simple vacuum evaporation technique for deposition of CdTe thin films with different thicknesses (100, 200, 300, 400, and 500) nm on P-type silicon substrates. Then, V2O5 and SnO2 thin films were deposited as a buffer layer and window layer with a thickness of 100 nm respectively, using the same technique. In addition, other samples of these films have been deposited on a glass substrate for the purpose of studying optical transmission and their optical properties. X-ray diffraction (HR-XRD) was used to characterize the films crystalline structures. The aim of this work is to investigate the effects of different thicknesses of CdTe thin films on the optical, Structural and electrical potential of CdTe/V2O5/SnO2 films and their potential applications in solar cells. The results show that using different thicknesses of CdTe-deposited thin films can enhance the performance. The efficiency improved by increasing the thickness of the CdTe films, and at 500 nm it reached (3.3%), and with a Voc (0.382 Volt).

Studying the effect of copper on the p-ZnTe/n-AgCuInSe2/p-Si for thin films solar cell applications

A thin film of AgInSe2 and Ag1-xCuxInSe2 as well as n-Ag1-xCuxInSe2 /p-Si heterojunction with different Cu ratios (0, 0.1, 0.2) has been successfully fabricated by thermal evaporation method as absorbent layer with thickness about 700 nm and ZnTe as window layer with thickness about 100 nm. We made a multi-layer of p-ZnTe/n-AgCuInSe2/p-Si structures, In the present work, the conversion efficiency (η) increased when added the Cu and when used p-ZnTe as a window layer (WL) the bandgap energy of the direct transition decreases from 1.75 eV (Cu=0.0) to 1.48 eV (Cu=0.2 nm) and the bandgap energy for ZnTe=2.35 eV. The measurements of the electrical properties for prepared films showed that the D.C electrical conductivity (σd.c) increased with increasing Cu content for AgCuInSe2 thin films. So the electrical conductivity changed from 1 (Ω.cm)-1 to 29.96 (Ω.cm)-1 when x changed from 0.0 to 0.2. The prepared thin films have two activation energies (Ea1 &amp; Ea2) in the temperature ranges of (300-393) K and (303-473) K. The C-V measurements revealed that all prepared heterojunctions were of the abrupt type and the junction capacitance reduced while the width of depletion region and the built-in potential increased with increasing the Cooper content. The current-voltage characteristics under dark condition of AgCuInSe2 heterojunctions, the current-voltage measurements under illumination showed that the performance of heterojunction solar cell improved with increasing Cu content. The result indicated that the prepared solar cell with 0.2 Ag content exhibited the highest efficiency (η = 1.68%) compared to other prepared solar cells.