Wide Band Gap Research Articles

On-demand performance optimization of AlGaN/GaN high electron mobility transistors using stoichiometric variation of dielectric alloy AlxTayO

The current research investigates the potential advantages of optimally combining wide bandgap Al2O3 with high dielectric constant (high-κ) Ta2O5 for gate dielectric applications. Various compositions of 10 nm AlxTayO oxide films are grown on the Al0.3Ga0.7N/GaN heterostructure by co-sputtering Al and Ta metals, followed by thermal oxidation at 500 °C. The average root-mean-square roughness of the grown oxide films is ∼1.2–1.4 nm compared to 0.4 nm for as-deposited metal. X-ray photoelectron spectroscopy and transmission electron microscopyconfirm the formation and thickness of the grown oxide films. The bandgap (Eg) of the oxide films calculated from O1s electron energy loss spectra show a linear increase from 4.85 eV for pure Ta2O5 to 6.4 eV for pure Al2O3. The dielectric constant (εox) calculated from capacitance–voltage (CG−VG) measurements decreases linearly from 25.7 for Ta2O5 to 7.9 for Al2O3. The interface trap density (Dit) is estimated from the frequency dispersion of capacitance–voltage (CG−VG) characteristics. The DC and radio frequency (RF) characteristics of AlxTayO/Al0.3Ga0.7N/GaN high electron mobility transistor (HEMT) devices are measured and compared with the Schottky HEMT devices (without any gate oxide). Compared to Schottky HEMT devices, AlxTayO/Al0.3Ga0.7N/GaN HEMT devices show superior DC characteristics, which helps us achieve maximum RF output power. Furthermore, the OFF-state measurements show that the AlxTayO/Al0.3Ga0.7N/GaN HEMT devices can sustain higher source-to-drain voltages, from a minimum of 88 V on pure Ta2O5 metal-oxide-semiconductor (MOS)-HEMTs to a maximum of 138 V on pure Al2O3 MOS-HEMTs before the dielectric breakdown happens, compared to a 57 V breakdown voltage on Schottky HEMT devices. An oxide variation of AlxTayO, with Al composition ratio of 0.34, shows an exceptional ION/IOFF ratio of 4 × 1011, a gate leakage current of 8 × 10−12 A/mm, a near-ideal subthreshold slope of 63.8 mV/dec, and the unity current gain frequency (fT) of 25.6 GHz.

Fabrication of In2S3 and In–Ga–S Thin Films via Atmosphere‐Controlled Fine‐Channel Mist Chemical Vapor Deposition

In the field of thin‐film solar cells, there is a growing need for cadmium‐free buffer layers and fabrication techniques that are both cost‐effective and environmentally friendly. In this study, the deposition of In2S3 and In–Ga–S thin films as alternative buffer layer materials in thin‐film solar cells, using mist chemical vapor deposition (CVD) at atmospheric pressure, is focused on. Indium diethyldithiocarbamate (DTC) and gallium DTC dissolved in dehydrated tetrahydrofuran are used as precursors. The deposited In2S3 demonstrates a wider direct bandgap (Eg‐dir ≈ 2.7 eV) than CdS, showing a potential for reducing parasitic absorption. Introducing a certain amount of gallium into In2S3 induces structural changes, resulting in a wider bandgap material. This bandgap widening primarily lowers electron affinity, making it beneficial for absorber materials with wider bandgap energies. Overall, the In2S3 and In–Ga–S thin films deposited via mist CVD exhibit preferable properties as alternatives to the CdS buffer layer. Moreover, the deposition technique proposed in this study can be adapted for the nonvacuum and cost‐effective deposition of other sulfide materials.

An Amorphous-to-Anatase Phase Transition Study of TiO2 Nanotubes by Temperature-Dependent Synchrotron-Based In Situ X-ray Diffraction.

TiO2 nanotubes (NTs) with amorphous and crystalline structures have attracted interest due to their wide range of applications, particularly black TiO2, which addresses the limitations of conventional TiO2 (a wide band gap of 3.0-3.2 eV). Understanding the amorphous-to-anatase phase transition is crucial for phase control of crystalline TiO2. This study investigates the size-dependent phase transition behavior of TiO2 and black TiO2 NTs using temperature-dependent synchrotron-based X-ray diffraction. Thermal treatments reveal that phase transitions occur in the ranges of 210-240 °C for normal NTs and 270-300 °C for black NTs. The onset temperature and crystallization growth are dependent on size, especially NT length, at least in the system under investigation. We observe anisotropic crystallization in quantum confinement, with the unit cell undergoing compression in the a-axis and expansion in the c-axis during crystallization. The longest black NTs (BV50T4) show a significant difference in the c/a ratio. Defects, such as oxygen vacancies, localize on specific NT planes.

A Stable Perovskite Sensitized Photonic Crystal P-N Junction with Enhanced Photoelectrochemical Hydrogen Production.

The slow photon effect in inverse opal photonic crystals represents a promising approach to manipulate the interactions between light and matter through the design of material structures. This study introduces a novel ordered inverse opal photonic crystal (IOPC) sensitized with perovskite quantum dots (PQDs), demonstrating its efficacy for efficient visible-light-driven H2 generation via water splitting. The rational structural design contributes to enhanced light harvesting. The sensitization of the IOPC with PQDs improves optical response performance and enhances photocatalytic H2 generation under visible light irradiation compared to the IOPC alone. The designed photoanode exhibits a photocurrent density of 3.42 mA cm-2 at 1.23 V vs RHE. This work advances the rational design of visible light-responsive photocatalytic heterostructure materials based on wide band gap metal oxides for photoelectrochemical applications.

A Multifunctional NaxBi/NaCl Flexible Interface Layer for Solid‐State Na Metal Batteries

AbstractNa3Zr2Si2PO12 (NZSP) electrolyte with excellent air stability and acceptable ionic conductivity demonstrates a significant potential for application in solid‐state Na metal batteries. However, the poor interfacial contact between NZSP and Na anode has severely hindered its practical application. Herein, a BiCl3/polytetrafluoroethylene flexible interface layer is constructed between NZSP and Na metal anode. BiCl3 can react with Na metal to form a multifunctional NaxBi/NaCl‐rich flexible interface layer during the cycling process, which can effectively enhance the interfacial contact, avoid the formation of voids and reduce the interfacial resistance. NaxBi with low energy barrier can provide fast Na+ diffusion path, and NaCl with a wide band gap can inhibit electron injection and suppress Na dendrite growth. Owing to the multifunctional NaxBi/NaCl flexible interface layer, the Na/BiCl3@NZSP/Na symmetric cell exhibits a reduced interfacial resistance from 1252.1 to 67.6 Ω and achieves a high critical current density of 2 mA cm⁻2 at 25 °C. At 0.1 mA cm⁻2/0.1 mAh cm⁻2 and 0.3 mA cm⁻2/0.3 mAh cm⁻2, the symmetric cell can stably cycle for 3000 and 1100 h. Additionally, the Na3V2(PO4)3/BiCl3@NZSP/Na full cell can retain 96.7% of initial capacity (≈111 mAh g−1) after 300 cycles at 0.5 C and excellent rate capability.

Histidine-based hybrid perovskites as promising materials for wide wavelength photodetection

Layered 2D hybrid organic-inorganic perovskites (2D-HOIPs) exhibit a distinctive array of properties, including remarkable structural flexibility, enhanced resistance to moisture, and optoelectronic characteristics valuable for practical applications. Consequently, these materials are now widely acknowledged as pivotal components in optical and optoelectronic technologies. However, a significant drawback of 2D-HOIPs is their wide band gaps that has hindered their widespread application in optoelectronic devices. In this work we address this limitation by offering a novel series of 2D mixed-halide tin-based HOIPs with general formula (L-HisH)2SnBrxI4−x (where L-His = L-histidine, x = 4, 3.37, 1.70, 0.56, 0.44, and 0) for which the band gap can reach record narrow values, which are not typical for 2D-HOIPs. These compounds can be easily obtained in wide compositional range by implementing halide substitution approach. Each hybrid perovskite features a chiral structure imparted by chiral L-histidinium(+) cations interleaved between corner-shared tin halide octahedra, organized into single-layer thin inorganic slabs. Crucially, these new materials provide a high degree of flexibility in tuning their band gaps throughout the entire visible light spectrum, encompassing a range between 1.82 and 3.05 eV. As a “proof-of-concept”, we created a prototype HOIPs photodetector in which this HOIP was used as an active layer. It is noteworthy that the band gap of pure iodide perovskite is surprisingly narrow for this class of materials. The production of semiconductor materials with a variable width of the optical bandgap is the key to more versatile and diverse applications of these materials in the active components of modern optoelectronic devices. For the obtained prototype, light detection is observed in the wide range covering UV, visible and near-IR regions, marking a record achievement for 2D-HOIPs. Beyond photodetectors, these new histidine-based perovskites hold promise for applications in various other optoelectronic devices, including solar cells, photodiodes, phototransistors, polarized light detectors, and more.

Enhanced high-temperature energy storage performances in polymer dielectrics by synergistically optimizing band-gap and polarization of dipolar glass

Polymer dielectrics play an irreplaceable role in electrostatic capacitors in modern electrical systems, and have been intensively studied with their polarization and breakdown strength (Eb) optimized for high discharged energy density (Ud) at elevated temperatures. Small molecules have been explored as fillers, yet they deteriorate thermal stability of matrix which limits their optimal loading to ~1 wt%. Herein, we develop a polymer blend dielectric consisting of common polyimide and a bifunctional dipolar glass polymer which are synthesized from two small molecule components with wide band-gap and large dipole moment. The bifunctional dipolar glass with large molecular weight not only maintains thermal stability of polymer blends even at a high loading of 10 wt%, but also induces substantial enhancement in polarization and Eb than any of individual components does, achieving an ultrahigh Ud of 8.34 J cm−3 (150 °C) and 6.21 J cm−3 (200 °C) with a charge-discharge efficiency of 90%.

Band gap correction via GGA[formula omitted]mBJ function and strained modulated physical properties of 2D-like DyOBr oxybromide

Two-dimensional (2D) oxyhalides offer unique and fascinating properties due to long-range magnetic ordering in a low dimensional limit. These have potential applications in spintronics and low-dimensional data storage devices. Herein, we demonstrate the biaxial ([110]) strain impact on the electronic and magnetic properties of thermodynamically stable 2D like DyOBr oxybromide based on the first-principles calculations including Hubbard parameter (U) and U+mBJ (modified-Becke-Johnson) methods as well as spin–orbit coupling (SOC) effects. Our calculations predict that an unstrained system exhibits an anti-ferromagnetic (AFM) insulating state with a direct wide energy band gap (Eg) of 5.404 eV within GGA+U+mBJ scheme and the estimated Neel temperature (TN) using the Ising model is 13 K, which is in excellent agreement with the experimentally observed values of 5.41 eV and 9.5 K, respectively. Moreover, it is revealed that Dy ions displayed a large partial spin magnetic moment (ms) of 4.969 μB/f.u. (per formula unit) with S = 2.5 as they lie in ＋ 3 state having the electronic configuration of [fx(x2−3y2)+fy(3x2−y2)]↑2↓1, [fxz2+fyz2]↑2↓1, [fz(x2−y2)]↑1↓0, [fxyz]↑1↓0, and [fz3]↑1↓0. Interestingly, the system displays a large magnetic anisotropy energy of 4.31 meV/atom with a magnetic easy axis of [100] (a-axis), which enhances its utilization in magnetic memory devices. Further, it is established that the AFM insulating behavior of the structure remains robust against biaxial ([110]) strain for the considered range of ±5%. However, a well-ordered shift in conduction band edge (CBE) position to higher and lower energy values is predicted for compressive and tensile strains, respectively. Strikingly, it is found that the TN increases to 265% for ＋5% strain.

Evaluating the mechanical stability and flexibility of Ga2O3 films on mica substrates via Pulsed Laser deposition and CASTEP simulations

This research analyzes the mechanical stability and flexibility of Ga2O3 films on mica substrates, advancing material science. Integrating Cambridge Sequential Total Energy Package (CASTEP) simulations with Pulsed Laser Deposition (PLD) reveals β-Ga2O3′s electronic structure and wide bandgap of 4.98 eV. X-ray diffraction (XRD) analysis indicates a significant increase in crystallite size from 26 nm to 152 nm as the substrate temperature increased from 500 °C to 800 °C. Scanning Electron Microscopy (SEM) images show enhanced grain size and defined boundaries at higher temperatures. The mechanical properties, including a bulk modulus of 201.35 GPa, shear modulus of 97.52 GPa, and Young’s modulus of 251.90 GPa, confirm the material’s strong mechanical stability. These properties suggest that Ga2O3 films suit high-stress and flexible electronic applications. This study bridges theoretical predictions with empirical observations, contributing to developing Ga2O3-based materials for next-generation technologies. © 2017 Elsevier Inc. All rights reserved.

Effect of scatterer shape, opening angle and periodicity on sound attenuation by local resonating sonic crystal

Noise Control has become critical and demanding task for acoustic engineers due to continuous Technological developments in construction, transportation, and industries. These developments have raised the level of low frequency noise in densely populated areas. Unfortunately, there cannot be sufficient noise reduction with traditional acoustic materials. However, new research has shown that the manipulation of sound waves and drastic reduction in sound transmission can be possible using periodic structure known as Sonic Crystals (SnC). This study describes the eigenfrequency analysis to investigate the effect of different shapes, periodicities, and opening angles of scatterers in a Local resonating Sonic Crystal (LRSnC). The Block-Floquet boundary condition is applied to the unit cell of the LRSnC, using the Finite Element Method to study the complex acoustic wave interactions throughout the structure. An acoustic module has been applied to find the band gap and to simulate transmission loss spectra in COMSOL Multiphysics. Results show that shape, opening angle and periodicity effect the band gap and transmission loss significantly. Based on these results, it is possible to develop advanced SnC with a wider band gap and higher sound attenuation in the lower sound frequency range by carefully considering these factors.

Pioneering the future with silicon carbide integrated photonics

Silicon carbide (SiC) integrated photonics is advancing rapidly, promising to overcome the limitations of other integrated photonics platforms and enable new quantum devices. This progress is driven by SiC’s exceptional optical properties and significant advancements in epitaxial growth technologies, enabling wafer-scale production and manufacturability. The development of photonic components in SiC and SiC on Insulators at the wafer scale marks a paradigm shift in the role of SiC in photonics, a field dating back over 20 years. These advancements are seamlessly incorporating SiC into both integrated photonics and the emerging quantum photonics sector. SiC’s wide bandgap, high thermal conductivity, and robust nonlinear optical response make it ideal for a range of applications, from resilient photonic circuits in harsh environments to quantum devices that could revolutionize computing and communication. As research progresses, SiC-integrated photonics is poised to deliver cutting-edge, energy-efficient, and high-performance solutions that align with the goals of a sustainable and technologically advanced future.

NiO@GaN nanorods-based core-shell heterostructure for enhanced photoelectrochemical water splitting via efficient charge separation

Remarkable properties of III-V semiconductors, particularly GaN nanostructured based photoelectrodes offers a potential attention in the field of photoelectrochemical water splitting (PEC-WS) for clean and sustainable hydrogen production, due to its wide bandgap, magnificent optoelectrical properties. However, the presence of inevitable surface states in GaN nanorods (NRs) leads to low solar-to-hydrogen (STH) conversion efficiency with poor stability, thereby severely limiting their practical application in PEC-WS, which can be effectively alleviated by constructing a hybrid heterostructures. Herein, we present the development of interfacial engineering of a type-II core-shell heterostructure based on p-NiO nanoparticles (NPs) loaded on n-GaN NRs photoelectrodes for PEC-WS. We assessed the impact of the NiO NPs shell density on core GaN NRs, finding that the optimized NiO@GaN NRs photoelectrode achieved a photocurrent density (Jph) of 1.38 mA/cm² at 1.23 V versus RHE and an excellent applied bias photo-to-current conversion efficiency (ABPE) of ∼0.39 %, which was 3.8 (Jph) and 4.8 (ABPE)-fold times higher than the pristine GaN NRs photoanode under 1-Sun illumination. The type-II p-n heterojunction band alignment between core-shell NiO@GaN NRs photoelectrode effectively reduced the photogenerated carrier recombination rate through surface states passivation and boost the light absorption and harvesting capacity. This facilitates a significant charge separation and transfer at the photoanode/electrolyte interface leading to enhanced redox reactions, resulting in improved PEC-WS and STH performances. These findings offer a promising strategy to design and fabricate highly efficient III-V hybrid heterostructure photoelectrodes for futuristic PEC-WS-based green energy applications.

Machine learning for locally periodic structure transmission modelling

This research aims to obtain an analytical transmission model for locally periodic structures with the approach of data-driven physics. So far, this task has been done mainly numerically for non-trivial geometries. From a dataset of Bloch phases generated for given frequency band and structure geometry parameters, it is possible to learn equations relating dispersion relation to axis-symmetric geometry. The dataset is transformed into a lower-dimensional space by applying Principal Component Analysis (PCA) to reduce the complexity of the problem. In the newly obtained coordinate system, the lower-dimensional patterns are extracted via symbolic regression. The resulting model is interpretable in terms of underlying physics and can be used, e.g., to propose an optimized design for a desired band gap width. Note that this has been so far possible only with numerical optimization repeatedly going back and forth from geometry to the dispersion relation, and hence, it significantly contributes to the overall readability of the system features.

Transformative elastic metamaterials: Temperature-induced passband-to-bandgap conversion

Elastic metamaterials favor the wide bandgap generation, but their formation mechanisms impose certain constraints on the achievable locations and widths. To overcome this limitation, this study proposes an innovative method that optimizes specific passbands and subsequently transforms them into bandgaps through an external stimulus. As an illustration, two meta-beams with different third passbands are optimized. In addition, to examine the formation and transformation mechanisms of the optimized passbands, this study develops several meta-beam models, incorporating force neutralizers, moment neutralizers, and their hybrid combinations, which are modally equivalent to the optimized unit cells. Samples for the two optimized meta-beams are fabricated using a three-dimensional printing technique. The experimental measurements are conducted at both room temperature and elevated temperatures, and the results confirm that when the temperature increases to approximately 60 °C, the optimized third passbands transform into bandgaps. Furthermore, repeated thermal loading cycles substantiate the reversibility of this transformation, demonstrating a promising application potential of the proposed method to tunable broadband meta-beam designs.

Hardware Testing Methodologies for Wide Bandgap High-Power Converters

Wide bandgap (WBG) power semiconductor devices are increasingly replacing silicon IGBTs in high-power and high-voltage power electronics applications. However, there is a significant gap in the literature regarding efficient testing methodologies for high-power and high-voltage converters under constrained laboratory resources. This paper addresses this gap by presenting comprehensive, hardware-focused testing methodologies for high-power and high-voltage WBG power semiconductor-based converter bring-up before the control validation phase steps in. The proposed methods enable thorough evaluation and validation of converter hardware, including device switching characteristics, driving circuit functionality, thermal management performance, insulation integrity, and sustained operation at full power. We utilized the double pulse test (DPT) to characterize switching performance in a two-level phase leg configuration, extract circuit parasitics, and validate magnetic components. The DPT was further applied to optimize gate driving circuits, validate overcurrent protection mechanisms, and measure device on-resistance. Additionally, a multicycle test was introduced to rapidly assess steady-state converter performance and estimate efficiency. Recognizing the critical role of thermal management in high-power converters, our methodologies extend to the experimental extraction of key thermal parameters—such as junction-to-ambient thermal resistance and thermal capacitance—via a heat loss injection method. A correlation method between temperature sensor measurements and junction temperature is presented to enhance the accuracy of device temperature monitoring during tests. To ensure reliability and safety, dielectric withstand tests and partial discharge measurements were conducted at both component and converter levels under conventional 60 Hz sinusoidal and high-frequency PWM waveforms. Finally, we highlight the importance of testing converters under full voltage, current, and thermal conditions through power circulating tests with minimal power consumption, applicable to both non-isolated and isolated high-power converters. Practical examples are provided to demonstrate the effectiveness and applicability of these hardware testing methodologies.

Topology-optimized 2D silicon–air phononic crystal slabs for enhancing quality factor of laterally vibrating resonators

Two-dimensional phononic crystal (PnC) slabs have shown advantages in enhancing the quality factors Q of piezoelectric laterally vibrating resonators (LVRs) through topology optimization. However, the narrow geometries of most topology-optimized silicon–air 2D PnC slabs face significant fabrication challenges owing to restricted etching precision, and the anisotropic nature of silicon is frequently overlooked. To address these issues, this study employs the finite element method with appropriate discretization numbers and the genetic algorithm to optimize the structures and geometries of 2D silicon–air PnC slabs. The optimized square-lattice PnC slabs, featuring a rounded-cross structure oriented along the ⟨110⟩ directions of silicon, achieve an impressive relative bandgap (RBG) width of 82.2% for in-plane modes. When further tilted by 15° from the ⟨100⟩ directions within the (001) plane, the optimal RBG width is expanded to 91.4%. We fabricate and characterize thin-film piezoelectric-on-silicon LVRs, with or without optimized 2D PnC slabs. The presence of PnC slabs around anchors increases the series and parallel quality factors Qs and Qp from 2240 to 7118 and from 2237 to 7501, respectively, with the PnC slabs oriented along the ⟨110⟩ directions of silicon.

Enhanced photocatalytic degradation activity of titanium dioxide by adsorbing aromatic amines through N-bonding

Narrowing the wide band gap of TiO2 (∼3.2 eV) to enhance its visible light efficiency is crucial for advancing photocatalytic degradation of organic pollutants in industrial wastewater. In this study, we achieved band gap reduction and slowed recombination rates by adsorbing some aromatic amines, like aniline and its electron-donating derivatives, onto TiO2. The predominantly present N-bonded amine species reduced the band gap and decelerated charge carriers’ recombination, enhancing photocatalytic degradation under visible light. In contrast, the amine with electron-withdrawing group is adsorbed as only H-bonded species, which showed no improvement in photocatalytic activity, performing similarly to pristine TiO2. This surface modification strategy offers potential for creating visible light-driven photocatalysts for effective degradation of organic pollutants in water.

Unravelling the efficiency of CoAl-LDH / g-C3N4 nanosheets: Type-II heterojunction for photocatalytic hydrogen production and dye degradation under solar light irradiation

The generation of hydrogen fuel, and wastewater treatment according to solar-driven catalysis possesses considerable prospective for establishing a carbon-neutral and ecologically sound power infrastructure. Driven by this problem, we suggest in this study, adopting a simple impregnation method, a customized association of CoAl-LDH and graphitic carbon nitride (CN), a visible light active narrow and wide band gap semiconductors. Several characterization approaches were implemented to understand the CoAl-LDH@g-C3N4 (CACN) composites' physiochemical and optical features. The CACN hetero structural forms exhibited significantly improved solar light-induced photocatalytic H2 generation and dye pollutants decomposition in contrast with pristine materials. The most effective catalyst 5 wt% CoAl-LDH@g-C3N4 (5-CACN) generated the highest hydrogen (∼430.7 μmolg−1h−1), which is 11.9-fold H2 production efficiency compared with CN and depicted significant Brilliant black dye removal efficacy via photocatalytic degradation (up to ∼79%). This was primarily ascribed to the development of the Type-II CACN heterojunctions, which promoted the separation of charges and expanded the abundance of surface-active sites while absorbing the visible spectrum of solar light.

Mechanism of Co3O4-TiO2 Nanocomposite Formation with Enhanced Photocatalytic Performance

TiO2 nanotubes are tubular structures that have garnered significant attention in materials science and engineering due to their unique properties and diverse applications. In this study, highly ordered and well aligned TiO2 nanotubes were successfully synthesized through anodization of Ti foil in ethylene glycol (C2H6O2) containing ammonium fluoride (NH4F) and hydrogen peroxide (H2O2) at 60 V for 30 minutes. The effectiveness of TiO2 as a photocatalyst under solar light is limited by its wide band gap and high recombination rate of charge carriers. To address these limitations, TiO2 nanotubes were modified with cobalt oxide. The resulting Co3O4-TiO2 nanocomposite was synthesized using a wet impregnation technique, aiming to enhance the photocatalytic performance of TiO2 nanotubes across a broader range of the solar spectrum. The formation of Co3O4-TiO2 nanocomposite is by immersing the TiO2 nanotubes in the metal salt precursor solution of Co(NO3)2 for a certain soaking period. The soaking cycle was repeated a few times to ensure the deposition of cobalt oxide nanostructures on the TiO2 nanotube samples. This diffusion interstitial process via wet impregnation was time dependent, which altered the amount of cobalt loaded on the nanotube's surface. The addition of cobalt significantly improved the photodegradation activity of the nanotubes under visible light, outperforming bare TiO2 nanotubes. This enhancement is likely due to the cobalt acting as shallow traps, which effectively promote the separation of photogenerated charge carriers.

Composite metastructure with tunable ultra-wide low-frequency three-dimensional band gaps for vibration and noise control

Low-frequency vibration and noise control present enduring engineering challenges that garner extensive research attention. Despite numerous active and passive control solutions, achieving multiple ultra-wide attenuation regions remains elusive. Addressing vibration and noise control across a multidirectional broad low-frequency spectrum, three-dimensional metastructures have emerged as innovative solutions. This study introduces a novel three-dimensional composite metastructure featuring multiple ultra-wide three-dimensional complete band gaps. The research emphasizes the design strategy of elastic ligaments to achieve multiple ultra-wide attenuation regions spanning from 0.7 to 40 kHz. The band structures are elucidated through modal analysis and further substantiated by an analytical model based on a spring-mass chain with an additional resonator. The underlying physical mechanism for the formation of multiple ultra-wide band gaps is revealed through novel vibration modes from finite element analyses. Furthermore, we demonstrate that the distribution and the relative width of the ultra-wide band gaps can be tuned by modifying the geometric parameters of the metastructure. Utilizing additive manufacturing, prototypes are fabricated, and low-amplitude vibration tests are conducted to evaluate real-time vibration attenuation properties. Consistency is observed among theoretical, numerical, and experimental results. The proposed structure shows significant potential for high-performance meta-devices aimed at controlling noise and vibration across an extremely wide low-frequency spectrum.