Wide-gap Layers Research Articles

Electron-beam-pumped semiconductor laser operating at low acceleration voltages

An investigation was made of the threshold characteristics of a laser pumped transversely by an electron beam accelerated by voltages below 25 kV. The target was a three-layer heterostructure with a thin active region between two wide-gap layers. The lowest threshold energy of the electron beam was 10 keV at T≈90 °K (the corresponding threshold value of the current density was jth = 0.45 A/cm2) and 12 keV at T≈300 °K (jth≈0.9A/cm2).

Multilayer GaAs-AIAs heterostructure laser pumped transversely by an electron beam

An experimental investigation was made of the influence of various types of multilayer GaAs--AlAs heterostructure isotypically doped with Zn or Te on the threshold current of a laser pumped transversely by an electron beam in the energy range 10--40 keV. The best results were obtained for a three-layer p-type structure in which the active layer was situated between two wide-gap layers and the structure was pumped through one of these layers. The lowest threshold current density for an electron beam energy of 40 keV was 0.08 A/cm/sup 2/ at T=85 /sup 0/K and 1.3 A/cm/sup 2/ at 300 /sup 0/K.

Heterojunction lasers made of GaxIn1–xAsyP1–yand AlxGa1–xSbyAS1–ysolid solutions

Double-sided heterostructures were prepared from four-component solid solutions GaxIn1–xAsyP1–y(λ=1.02 μ) and AlxGa1–xSbyAS1–y(λ=0.945 μ). In the former system the problem of compatability of the lattices was solved by adding Ga and As to InP in amounts which ensured that the lattice period was the same (because of the opposite influence of these impurities). Indium phosphide was used as the wide-gap layer. The resultant laser heterostructure was the first system not based on the mutual replacement of Al and Ga, in contrast to earlier heterolasers and to the second investigated system (AlxGa1–xSbyAS1–y).