Abstract
Double-sided heterostructures were prepared from four-component solid solutions GaxIn1–xAsyP1–y(λ=1.02 μ) and AlxGa1–xSbyAS1–y(λ=0.945 μ). In the former system the problem of compatability of the lattices was solved by adding Ga and As to InP in amounts which ensured that the lattice period was the same (because of the opposite influence of these impurities). Indium phosphide was used as the wide-gap layer. The resultant laser heterostructure was the first system not based on the mutual replacement of Al and Ga, in contrast to earlier heterolasers and to the second investigated system (AlxGa1–xSbyAS1–y).
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