Wide Bandgap Semiconductor Materials Research Articles

Hydrothermal Growth Zinc Oxide Nanorods for pH Sensor Application

The aim of this work is to apply synthesized zinc oxide (ZnO) Nanorods using hydrothermal (HTL) growth technique for pH sensor application. The highly crystallite of ZnO Nanorods was obtained by anneal the growth ZnO Nanorods in furnace at 200 °C for 2 hours. Besides that, XRD analysis shows the produced ZnO Nanorods belonged to the (002) plane. Furthermore, Scanning Electron Microscope (SEM) images confirm that the ZnO Nanorods with hexagonal-faceted structural were successfully produced by HTL growth technique. In addition, Ultraviolet–visible (UV-Vis) spectrophotometer analysis shows that the synthesized ZnO belongs to the wide band gap semiconductor material. The growing ZnO Nanorods were then subjected to electrical measurement with various pH levels. The outcome demonstrates that the current rises as the solution changes from acidic to alkaline. Overall, our study shows a relationship between the electrical as well as the structural characteristics of ZnO Nanorods at various pH levels.

Electron field emission property of NiO-decorated ZnO nanorods grown on diamond films

ZnO/micron diamond (MCD) composite structure combines two wide-band gap semiconductor materials, providing stable performance suitable for high-performance electron field emission (EFE) devices operating in various complex environments. Nonetheless, the optical and electrochemical limitations of ZnO constrain its effectiveness. Typically, NiO can compensate these inherent defects in ZnO, thereby enhancing the performance of field-emitting devices. In this research, NiO-decorated ZnO thin films were fabricated on diamond surfaces using hydrothermal/sol-gel two-step method. The impact of varying Ni doping concentrations caused by nickel acetate solutions on the field emission properties was thoroughly investigated. Furthermore, this study involved the fabrication of NiO-decorated ZnO/micron diamond heterojunction composite structures, exploring the impact of the structure on the optoelectronic performance of the devices. The Ni doping concentration increases in the NiO films formed between the ZnO nanorods, the doped Ni exists in the ZnO/MCD composite structure as both Ni2+ and Ni3+, which are important materials for semiconductor electronic devices. The NiO decoration process induced the creation of defect levels within the bandgap of the nanorod array structure, consequently enhancing the photoluminescence performance of ZnO. Furthermore, the interaction between NiO and ZnO facilitated the formation of a p-n junction at the interface, generating an internal electric field. This electric field significantly improved the current conduction field and maximum current density of ZnO, thereby enhancing its electric field emission performance. The optical and electrical properties of ZnO nanorods doped at 0.1M exhibited the most favorable characteristics among all tested samples. At a doping concentration of 0.1 M, the turn-on electric field reaches a minimum value of 0.96 V/μm and the maximum current density J reaches a maximum value of 2.54 mA/cm2. These results offer novel insights for advancing the development of integrated broadband optical devices.

Hexagonal ZnTiO3 single-crystalline films on α-Al2O3 substrates: Structural and photoelectric properties

Hexagonal ZnTiO3 (h-ZnTiO3) films with stoichiometric were deposited on α-Al2O3 substrates using pulsed laser deposition (PLD) method and post annealing process. The effect of oxygen partial pressure on Zn/Ti atomic ratio, as well as the influence of annealing treatment on the structural and optical properties of the films were investigated in detail. The optimum h-ZnTiO3 film was deposited under 5 Pa oxygen partial pressure and annealed at 800°C, and it exhibited excellent crystalline quality and an optical band gap of 3.72 eV. A photodetector based on the film was fabricated, and its photoresponsivity was approximately 0.18 mA/W under 308 nm ultraviolet light irradiation. This demonstrates that as a wide bandgap semiconductor material, h-ZnTiO3 has potential applications in the field of devices.

Plasmonic Ag Nanoparticles on SiC for Use as SERS Substrate and in Integrated Optical Sensors for Bio-Chemical Applications

Development of optical chemical sensors for the detection of specific toxic chemicals at ultratrace levels and analysis of complex mixtures is crucial for new green and safe technologies [1, 2]. Metallic structures confined at the nanoscale acquire interesting properties such as strongly localizing E fields on their surfaces through Plasmonic Resonance under stimuli of light at certain wavelengths. This nanostructures are called plasmonic structures [3–5]. This effect is exploited to amplify the optical signal obtained by the molecules of interest, located near plasmonic structures [3, 6]. Purpose of the work is the development of innovative, easy to manufacture and cheap optical active layer consisting of Plasmonic Ag Nanoparticles on a Wide Band Gap semiconductor material such as Silicon Carbide to be used as substrate for Surface Enhanced Raman Scattering or for the fabrication of integrated optical sensor for remote chemical and biological applications. In this contest, the phenomenon of Ag thin film thermal dewetting on SiC substrate was implemented to develop a simple nanoparticles synthetic approach. Scanning Electron Microscopy confirmed the formation of Ag nanoparticles by thermal annealing of thin silver film. 4-MBA was used as probe molecule for SERS phenomenon investigation. The formation of a covalent bond between the silver nanostructures, acting as plasmonic "hot spots", and the species of interest enable its detection at very low concentrations, in the range of 10-5 M or less, in both Raman and UV-Vis configurations.

An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties.

Gallium oxide is a wide-bandgap compound semiconductor material renowned for its diverse applications spanning gas sensors, liquid crystal displays, transparent electrodes, and ultraviolet detectors. This paper details the aerosol assisted chemical vapor deposition synthesis of tin doped gallium oxide thin films using gallium acetylacetonate and monobutyltin trichloride dissolved in methanol. It was observed that Sn doping resulted in a reduction in the transmittance of Ga2O3 films within the visible spectrum, while preserving the wide bandgap characteristics of 4.8 eV. Furthermore, Hall effect testing revealed a substantial decrease in the resistivity of Sn-doped Ga2O3 films, reducing it from 4.2 × 106 Ω cm to 2 × 105 Ω cm for the 2.5 at. % Sn:Ga2O3 compared to the nominally undoped Ga2O3.

Numerical investigation of diamond complementary logic integrated circuits

Silicon complementary metal oxide semiconductor (CMOS) technology drives the integrated circuit industry due to its energy efficiency. The narrow bandgap of silicon has led to the development of wide bandgap semiconductor materials, such as diamond, favored in power electronics, radiofrequency and extreme environment applications. Here we have established a model of the diamond CMOS logic inverter for the first time and successfully simulated the static and dynamic characteristics. The simulated physical model and relevant model parameters are well calibrated with experimental data of diamond p-FET in the literature. The simulation results demonstrate that the all-diamond CMOS inverters possess rail-to-rail operation and excellent inversion characteristics, with the peak gain of 83 V/V, the transition region of 0.25 V, and the noise margins for low and high level of 2.44 V and 2.26 V under VDD = 5 V. Particularly, all-diamond CMOS inverters have improved performance compared to the diamond-GaN inverters, operating at 500 °C with well-preserved inversion characteristics. This thermal reliability indicates that diamond CMOS inverters can be better monolithically integrated for applications in high-temperature environments in the future.

Atomic-Level Insights of Polypyrrole Grafted InGaZnO Structure for ppb-Level Ozone Gas Sensing at Low Operating Temperature.

This study explores the utilization of the organic conductive molecule Polypyrrole (PPy) for the modification of Indium Gallium Zinc Oxide (IGZO) nanoparticles, aiming to develop highly sensitive ozone sensors. Pyrrole (Py) molecules undergo polymerization, resulting in the formation of extended chains of PPy that graft onto the surface of IGZO nanoparticles. This interaction effectively diminishes oxygen vacancies on the IGZO surface, thereby promoting the crystallization of the IGZO (1114) facets. The resultant structure exhibits promising potential for achieving high-performance wideband semiconductor gas sensors. The IGZO/PPy device forms a Straddling Gap heterojunction, facilitating enhanced electron transfer between IGZO and ozone molecules. Notably, the adsorption and desorption of ozone gas occur efficiently at a low temperature of approximately 25 °C, obviating the need for additional energy typically associated with wide bandgap semiconductor materials. Density Functional Theory (DFT) calculations attribute this efficiency to the enhanced number of active sites for ozone adsorption, facilitated by hydrogen bonds. The substantial conductivity of PPy, combined with its planar ring structure, induces positively charged polarization on the IGZO side upon ozone adsorption. The resultant device exhibits exceptional sensitivity, boasting a 4-fold improvement compared to sensors reliant solely on IGZO. Additionally, the response time is significantly reduced by a factor of 10, underscoring the practical viability and enhanced performance of the IGZO/PPy sensor field.

Mechanochemical grinding with aluminium-coated nickel and diamond mixed abrasive vitrified bond wheel for reducing anisotropy in (100) surface single-crystal diamond processing

While single-crystal diamond is a promising wide-bandgap semiconductor material, it is also the hardest material in nature and exhibits remarkable anisotropy, presenting a challenge for high-quality and efficient processing. To address this issue, this article introduces a method that utilises aluminium-coated nickel and diamond mixed abrasive vitrified bond grinding wheels for a mechanicochemical grinding process to reduce the anisotropic removal of diamond. Different cutting depths, abrasive ratios, grinding directions, and linear velocities were employed in the processing, with the material-removal mechanism studied through morphological characterisation, elemental content, and other detection methods. The experiment revealed that the catalytic effect of nickel metal occurred along the (111) crystal plane of the diamond. This catalytic process involves a transition from sp3 diamond to amorphous carbon, followed by graphitisation. The spin-rotating mechanicochemical grinding process mainly involves plastic removal in the soft direction and coupled chemical and mechanical removal in the hard direction. Employing this method reduced the surface roughness of the 7 × 7 mm as-grown crystal to Ra 0.467 nm, with a material removal rate of 4.73 μm/h, achieving a nearly damage-free machining surface.

Principles and Methods for Improving the Thermoelectric Performance of SiC: A Potential High-Temperature Thermoelectric Material.

Thermoelectric materials that can convert thermal energy to electrical energy are stable and long-lasting and do not emit greenhouse gases; these properties render them useful in novel power generation devices that can conserve and utilize lost heat. SiC exhibits good mechanical properties, excellent corrosion resistance, high-temperature stability, non-toxicity, and environmental friendliness. It can withstand elevated temperatures and thermal shock and is well suited for thermoelectric conversions in high-temperature and harsh environments, such as supersonic vehicles and rockets. This paper reviews the potential of SiC as a high-temperature thermoelectric and third-generation wide-bandgap semiconductor material. Recent research on SiC thermoelectric materials is reviewed, and the principles and methods for optimizing the thermoelectric properties of SiC are discussed. Thus, this paper may contribute to increasing the application potential of SiC for thermoelectric energy conversion at high temperatures.

Beyond earth: Evaluating SiC and GaN as next-generation semiconductors for Venus exploration

Abstract This paper evaluates Silicon Carbide (SiC) and Gallium Nitride (GaN) as potential wide-bandgap semiconductor materials for Venus’ surface exploration. Both materials possess properties advantageous for withstanding Venus’ extreme conditions. Through an in-depth comparison, the study examines stability, energy efficiency, and integration levels of both materials. Although GaN showcases superior electron mobility and potential for high energy efficiency, it confronts challenges in large-scale circuit integration due to its limited wafer size and intricacies in device structure design. Conversely, SiC-based processors have demonstrated operability at high temperatures, with performance comparable to computers used in previous space missions. While neither material currently achieves the processing prowess of past space exploration computers, the study recommends SiC for Venus exploration due to its demonstrated capabilities and higher potential for integration. The paper concludes that optimized SiC processors hold promise for future Venusian surface missions.

High Sensitive and Stable UV-Vis Photodetector Based on MoS2/MoO3 vdW Heterojunction.

The development of new high-performance photodetectors (PDs) is currently focused on achieving small size, low power consumption, low cost, and large bandwidth. Two-dimensional (2D) materials and heterostructures offer promising approaches for the future development of optoelectronic devices. However, there has been limited research on 2D wide-bandgap semiconductor heterostructures. In this study, we successfully constructed a MoS2/MoO3 vdW heterojunction PD. This PD exhibited excellent response and significant photovoltaic behavior in the ultraviolet (UV) to visible (Vis) range. Under 365 nm UV light and 1 V bias voltage, the PD demonstrated a high responsivity of 645 mA/W, a high specific detectivity of 8.98 × 1010 Jones, and fast response speeds of 55.9/59.6 ms. At 0 V bias voltage, the responsivity reached as high as 157 mA/W. Furthermore, the PD exhibited remarkable stability in its performance. These outstanding characteristics can be attributed to the strong internal electric field created by the type II heterojunction structure and the chemical stability of the materials. This work opens a route for the application of 2D wide-bandgap semiconductor materials in optoelectronic devices.

Synthesis, crystal structure of Ca6Sb2O11 from experiments and DFT-electron structure calculation

This article reports a new perovskite compound Ca6Sb2O11. The X-ray powder diffraction technique was used to analyze its crystal structure. The results show that Ca6Sb2O11 has a tetragonal structure with the I4/m space group, and the lattice parameters are a = b = 5.658 (1) Å, c = 7.984 (1) Å, α = β = γ = 90°. It exhibits a typical A4B'2B″2X12-x anoxic multi-perovskite structure with rock-salt ordering of the B-site cations. The compound's chemical composition and valence states were characterized through scanning electron microscopy-energy dispersion spectrum (SEM-EDS) and X-ray photoelectron spectroscopy (XPS). The presence of oxygen vacancies was confirmed by electron paramagnetic resonance (EPR) spectroscopy. A chemical and structure transition temperature and the full melting temperature of Ca6Sb2O11 were measured, with values of 1515 ± 3 K and 1720 ± 3 K, respectively. The density functional theory (DFT)-electron structure calculation results show that Ca6Sb2O11 is an indirect wide-band gap (∼4.47 eV) semiconductor material, which agrees well with the experimental value (∼4.38 eV) obtained through diffuse reflection spectroscopy (DRS). Moreover, the top of the valence band and bottom of the conduction band are mainly contributed to by O-2p and Ca-3d states, respectively.

New insights into the photoassisted anodic reactions of n-type 4H SiC semiconductors

This study aims to investigate the photoelectrochemical behavior of the n-type 4H-SiC, focusing on aqueous, hydroxide-based electrolytes. Despite its high stability, this wide-bandgap semiconductor material undergoes electrochemical reactions, such as anodic oxidation or etching, under specific conditions. Since electrons are the majority charge carriers in n-type semiconductors, oxidation processes require above-bandgap illumination. Then, the reaction rate is influenced by the number of electron holes available for an oxidation process and the velocity of the transport of hydroxide ions to/from the surface. The goal is to focus on the essential reaction parameters (i.e., potential and electrolyte concentration) to clarify the reaction mechanism in aqueous (alkaline) electrolytes. Methods with controllable hydrodynamic conditions are required to investigate the transport processes in the electrolyte. Even though the rotating disk electrode (RDE) is a commonly used and powerful method, it is not well suited for our purpose. Photoelectrochemical etching of SiC is extraordinary because it involves both mass transfer phenomena and gas evolution but also needs high-intensity illumination from an appropriate light source. Hence, a new concept for an inverted rotating cell was developed and implemented. This setup was used to study the effect of the mass transport of hydroxide ions on the photoelectrochemical behavior of SiC in each potential region at varying rotation speeds. In order to interpret the experimental findings, a distinct electrical network model was formulated for simulating the results, aiding in unraveling the underlying reaction mechanism. Electrochemical measurements were complemented by surface-sensitive analytical techniques. XPS was the method of choice to investigate the composition of the sample surface before and after etching. SEM and AFM allow the characterization of the surface morphology in the initial stages of etching. The totality of this information provides a complete picture of the complex processes in the vicinity of the semiconductor electrode.Graphical abstract

GaN HEMT for High-performance Applications: A Revolutionary Technology

Background: The upsurge in the field of radio frequency power electronics has led to the involvement of wide bandgap semiconductor materials because of their potential characteristics in achieving high breakdown voltage, output power density, and frequency. III-V group materials of the periodic table have proven to be the best candidates for achieving this goal. Among all the available combinations of group III-V semiconductor materials, gallium nitride (GaN), having a band gap of 3.4eV, has gradually started gaining the confidence to become the next-generation material to fulfill these requirements. Objective: Considering the various advantages provided by GaN, it is widely used in AlGaN/GaN HEMTs (High Electron Mobility Transistors) as their fundamental materials. This work aimed to review the structure, operation, and polarization mechanisms influencing the HEMT device, different types of GaN HEMT, and the various process technologies for developing the device. Methods: Various available methods to obtain an enhancement type GaN HEMT are discussed in the study. It also covers the recent developments and various techniques to improve the performance and device linearity of GaN HEMT. Conclusion: Despite the advantages and continuous improvement exhibited by the GaN HEMT technology, it faces several reliability issues, leading to degradation of device performance. In this study, we review various reliability issues and ways to mitigate them. Moreover, several application domains are also discussed, where GaN HEMTs have proven their capability. It also focuses on reviewing and compiling the various aspects related to the GaN HEMT, thus providing all necessary information.

Low-cost O2 plasma activation assisted direct bonding of β-Ga2O3 and Si substrates in air

This study presents a novel technique for directly bonding β-Ga2O3 and Si substrates using O2 plasma activation at room temperature. The activation process resulted in excellent surface hydrophilicity and roughness. Annealing in an N2 atmosphere revealed a bonding strength of 6.23 MPa, with partial fracture of the Si substrate. The bonding interface was observed by TEM and EDS. A distorted amorphous intermediate layer with a thickness of 100 nm and amorphous bubbles were observed in the bonding interface. In addition, the Ga, O, and Si elements were diffused and enriched, forming approximately 30 nm nodules at the bonding interface. This method offers a promising approach for integrating wide bandgap semiconductor materials in devices, bypassing the need for vacuum treatment.

4H–SiC microring resonators—Opportunities for nonlinear integrated optics

Silicon carbide, a wide bandgap semiconductor material platform, has emerged as an exceptional material for nonlinear integrated photonics. Among the different poly-structures, 4H-silicon carbide-on-insulator stacks show promising results to their low loss, which are crucial for commercial applications like communication, metrology, and spectroscopy. High Q-values and low-loss microring resonators are imperative for miniaturization and photonic integration in these applications. This Perspective emphasizes recent advancements in enhancing the quality factor of microresonators based on 4H-silicon carbide, as well as the strides made in experimental results of third-order nonlinearities. Furthermore, this Letter addresses and outlines the prospects of integrating 4H-silicon carbide microring resonators into frequency comb technologies and potential applications.

Construction and simulation of a joint scale model for power electronic converters based on wavelet decomposition and reconstruction algorithms.

In power electronics systems, system design and operation often involve multiple time and space scales, ranging from nanosecond switching dynamics to hour-level system operation behavior. Due to the complexity of these systems and the rise of wide-gap semiconductor technology, a series of multi-scale phenomena have emerged that are difficult to ignore. The high frequency of switching operations makes multi-scale effects particularly significant, including the fast dynamic response of the power loop, EMI, and heat conduction problems. They are key factors that must be considered in the design to ensure the efficient and reliable operation of power electronic devices. This study proposes the construction and simulation of a joint scale model for power electronic converters based on wavelet decomposition and reconstruction algorithms to address the multi-scale phenomenon and limitations of single-scale power electronic converters. Firstly, a joint scale model for power electronic converters at both macro and micro-scales was established, targeting both single-scale models and simple combinations of multiple scale models for power electronic converters. The traditional single-scale model is sufficient to describe the average behavior of the converter, but it has serious limitations in capturing fast transient processes and high-frequency switching behavior in power electronic systems. These limitations often manifest themselves when there is a need to capture fine timescales of detail. By transforming between the time domain and the frequency domain, wavelet decomposition enables the model to capture both macroscopic average characteristics and microscopic transient dynamics. The wavelet reconstruction algorithm can simulate all kinds of fast changes in the actual working process more accurately and compress irrelevant information while retaining key signal features, so as to optimize the simulation performance of the model. Secondly, this algorithm is used to analyze BC in short time scale. Finally, the short time scale characteristics of power electronic converters are analyzed. Experimental results show that the fusion of wavelet decomposition and reconstruction algorithm enhances the accuracy of the power electronic converter model and improves the performance of the system. The model achieves an error reduction of nearly 3% in the calculation step size of 10-7s, which has a significant impact on the high precision requirements of high-frequency operations. In addition, the optimal calculation step size of 8×10-8s achieves an error reduction of more than 14%, making an important contribution to the transient analysis and fine structure simulation. The wavelet algorithm can improve the accuracy of multi-scale modeling in power electronic system and reduce the simulation time. The reduction of error not only shows the improvement of the accuracy of the model, but also shows its practical significance in the design and test of the actual power electronic system. The reduction in error reveals the ability to more accurately predict and mitigate potential performance problems in matching tests with actual hardware, as well as its ability to adapt to emerging wide bandgap semiconductor materials and structures.

Numerical investigation of laser doping parameters for semi-insulating 4H-SiC substrate

Semi-insulating (SI) 4H-polytype of silicon carbide (SiC) is a highly desirable wide bandgap semiconductor material for various applications in challenging environments owing to its exceptional characteristics such as high melting point, remarkable thermal conductivity, strong breakdown field, and excellent resistance to oxidation. This study investigates the critical laser processing parameters to operate a pulsed UV 355 nm laser to dope high-purity (HP) SI 4H-SiC substrates with boron. The doping process parameters are examined and simulated for this UV laser doping system using a liquid precursor of boron. Boron atoms create a dopant energy level of 0.3eV in the doped HP 4H-SiC substrates. Diffusion of boron atoms into 4H-SiC substrates modifies the hole density at 0.3eV energy level, and causing a variation in the dynamic refraction index, and absorption index. Consequently, the optical properties of boron doped samples, namely, transmittance, reflectance, and absorbance, can be modified. The current simulation reported in this study explains the motivation of UV optical doping strategy to dope SiC substrates. A beam homogenizer was used to control the laser spot used to generate doping process. The advantage of the beam homogenizer is demonstrated by producing flat-top beams with uniform intensity over a certain area defined by the focusing lens choice. A simple theoretical model is used to select the laser processing parameters for doping SiC substrates. These modeled parameters are used to determine the efficient laser processing parameters for our doping experiments.

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

β-Ga2O3, an emerging wide bandgap semiconductor material, holds significant potential for various applications. However, challenges persist in improving the crystal quality and achieving controllable doping of β-Ga2O3. In particular, the relationship between these factors and the mechanisms behind them are not fully understood. Molecular beam epitaxy (MBE) is viewed as one of the most sophisticated techniques for growing high-quality crystalline films. It also provides a platform for studying the effects of doping and defects in heteroepitaxial β-Ga2O3. In our study, we tackled the issue of Si source passivation during the MBE growth of Si-doped β-Ga2O3. We did this by using an electron beam vaporize module, a departure from the traditional Si effusion cell. Our research extensively explores the correlation between Si doping concentration and film properties. These properties include microstructure, morphology, defects, carrier conductivity, and mobility. The results from these investigations are mutually supportive and indicate that a high density of defects in heteroepitaxial β-Ga2O3 is the primary reason for the challenges in controllable doping and conductivity. These insights are valuable for the ongoing development and enhancement of β-Ga2O3-based device techniques.

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Emission and capture characteristics of a deep hole trap (H1) in n-GaN Schottky barrier diodes (SBDs) have been investigated by optical deep level transient spectroscopy (ODLTS). Activation energy (E emi) and capture cross-section (σ p) of H1 are determined to be 0.75 eV and 4.67 × 10−15 cm2, respectively. Distribution of apparent trap concentration in space charge region is demonstrated. Temperature-enhanced emission process is revealed by decrease of emission time constant. Electric-field-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission (PFE) model. In addition, H1 shows point defect capture properties and temperature-enhanced capture kinetics. Taking both hole capture and emission processes into account during laser beam incidence, H1 features a trap concentration of 2.67 × 1015 cm−3. The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.