Abstract
Abstract This paper evaluates Silicon Carbide (SiC) and Gallium Nitride (GaN) as potential wide-bandgap semiconductor materials for Venus’ surface exploration. Both materials possess properties advantageous for withstanding Venus’ extreme conditions. Through an in-depth comparison, the study examines stability, energy efficiency, and integration levels of both materials. Although GaN showcases superior electron mobility and potential for high energy efficiency, it confronts challenges in large-scale circuit integration due to its limited wafer size and intricacies in device structure design. Conversely, SiC-based processors have demonstrated operability at high temperatures, with performance comparable to computers used in previous space missions. While neither material currently achieves the processing prowess of past space exploration computers, the study recommends SiC for Venus exploration due to its demonstrated capabilities and higher potential for integration. The paper concludes that optimized SiC processors hold promise for future Venusian surface missions.
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