AbstractThis paper is concerned with the waveguide power combining amplifier of reflection type and of transmission type. The structure of the waveguide reflection type power combining amplifier consists of an IMPATT diode (to be called the active element) under a post at the center of the waveguide and of a shorting plunger. At the distance Z in front of the active device, another active device is placed under a post and an inductive window is located at Z in front of this second device. On the other hand, the transmission type (power combining) amplifier consists of an active device under a post located at Z from an inductive window. Another device is placed under a post at Z further down the waveguide and an exit inductive window at Z from the second device. The waveguide height of the two amplifiers are 3 mm for which the stability condition is satisfied for the amplifier. Tapered sections are installed from the reduced height waveguide to standard waveguides.The equivalent circuits of the two amplifiers have been derived from the electromagnetic field equations. The experiment of the power combining amplifiers have been performed at the 10‐GHz range. The output power is 2.5 mW to 103 mW when the input power was changed from 0.5 mW to 20 mW. The calculated results from the equivalent circuits agree well with the measured data.
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