Wafer Scale Integration Research Articles

Wafer-scale integration of two-dimensional perovskite oxides towards motion recognition

Two-dimensional semiconductors have shown great potential for the development of advanced intelligent optoelectronic systems. Among them, two-dimensional perovskite oxides with compelling optoelectronic performance have been thriving in high-performance photodetection. However, harsh synthesis and defect chemistry severely limit their overall performance and further large-scale heterogeneous integration. Here, we report the wafer-scale integration of highly oriented nanosheets by introducing a charge-assisted oriented assembly film-formation process and confirm its universality and scalability. The shallow-trap dominance induced by structural optimization endows the device with a distinguished performance balance, including high photosensitivity close to that of single nanosheet units and fast response speed. An integrated ultra-flexible 256-pixel device demonstrates the versatility of material-to-substrate integration and conformal imaging functionality. Moreover, the device achieves efficient recognition of multidirectional motion trajectories with an accuracy of over 99.8%. Our work provides prescient insights into the large-area fabrication and utilization of 2D perovskite oxides in advanced optoelectronics.

Ultraflat single-crystal hexagonal boron nitride for wafer-scale integration of a 2D-compatible high-κ metal gate.

Hexagonal boron nitride (hBN) has emerged as a promising protection layer for dielectric integration in the next-generation large-scale integrated electronics. Although numerous efforts have been devoted to growing single-crystal hBN film, wafer-scale ultraflat hBN has still not been achieved. Here, we report the epitaxial growth of 4 in. ultraflat single-crystal hBN on Cu0.8Ni0.2(111)/sapphire wafers. The strong coupling between hBN and Cu0.8Ni0.2(111) suppresses the formation of wrinkles and ensures the seamless stitching of parallelly aligned hBN domains, resulting in an ultraflat single-crystal hBN film on a wafer scale. Using the ultraflat hBN as a protective layer, we integrate the wafer-scale ultrathin high-κ dielectrics onto two-dimensional (2D) materials with a damage-free interface. The obtained hBN/HfO2 composite dielectric exhibits an ultralow current leakage (2.36 × 10-6 A cm-2) and an ultrathin equivalent oxide thickness of 0.52 nm, which meets the targets of the International Roadmap for Devices and Systems. Our findings pave the way to the synthesis of ultraflat 2D materials and integration of future 2D electronics.

(Invited) 3D Integration of 2D Devices for Neuromorphic Computing

In this presentation, I will delve into the exciting realm of monolithic 3D integration, where emerging 2D FETs take center stage, empowering advanced memory, and logic devices. Furthermore, I will also discuss our work on bio-inspired neuromorphic computing. Notably, our recent breakthroughs have culminated in the successful demonstration of wafer-scale 2-tier and 3-tier 3D integration, utilizing MoS2 and WSe2 FETs as the building blocks. These achievements have paved the way for multifunctional circuits that hold immense promise for the future of electronics. Delving deeper into our research, we have harnessed the potential of 2D materials to design solid-state devices with low power consumption mimicking auditory processing in barn owl, collision avoidance in locust, and probabilistic computing in dragonfly. By combining the power of 2D materials with bio-inspired principles, our work lays a solid foundation for the creation of highly compact and functionally diverse integrated circuits in the revolutionary third dimension. The implications of this technology are far-reaching and hold the potential to shape the future of electronics and computing.

A Colloidal Route for Ubiquotous Mid-Wave Infrared Sensing

The rapid emergence of the Internet of Things, machine vision, and artificial intelligence have imposed critical requirements on the miniaturization, energy efficiency, and cost-effectiveness of infrared detectors. To meet these requirements, new sensor technologies that can reduce the fabrication cost associated with semiconductor epitaxy and remove the stringent requirement for cryogenic cooling are under active investigation. In the technologically important spectral region of mid-wavelength infrared (3–5 µm), colloidal quantum dots are currently at the forefront of this endeavor, with wafer-scale monolithic integration and Auger suppression being the key material capabilities to minimize the sensor's size, weight, power consumption, and cost (SWaP-C). Infrared sensors based on colloidal quantum dots have been studied for decades, and harnessing the interband transition in these quantum-confined nanostructures has been the mainstream theme in optoelectronic research. More unique photophysical properties can be harnessed by utilizing the transitions within the conduction levels or valence levels, known as intraband (intersubband) transitions. In this presentation, we discuss the progress, challenges, and opportunities of MWIR sensors fabricated from Ag2Se intraband colloidal quantum dots, a heavy metal-free colloidal nanomaterial that has merits for wide-scale adoption in consumer and industrial sectors.

A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors

Photodetectors (PDs) are crucial in modern society, as they enable the detection of a diverse range of light-based signals. With the exponential increase in their development, materials are being used to create a wide range of PDs that play critical roles in enabling various applications and technologies. Image sensor technology has been hindered due to the lack of a universal system that can integrate all types of PDs with silicon-based readout integrated circuits (ROICs). To address this issue, we conducted experiments using two-dimensional materials as an example. We fabricated high-performance MoS2/MoTe2-based photodetectors and identified the most suitable ROICs to pair with them. This established a solid foundation for further research in the field of image sensors. We developed and implemented a versatile testing system that uses a printed circuit board to connect the PD and ROIC. After the ROIC generates the sampled signal, it is collected and processed by algorithms, which overcome device uniformity limitations and produce a high-quality image that is visible to the naked eye. This universal system can be used with a wide range of PD and ROIC types made from different materials, making it highly convenient for diverse testing applications and the development of diverse image sensor types. This robust new platform is expected to spur further innovation and advancements in this rapidly developing field.

Advancing large-scale thin-film PPLN nonlinear photonics with segmented tunable micro-heaters

Thin-film periodically poled lithium niobate (TF-PPLN) devices have recently gained prominence for efficient wavelength conversion processes in both classical and quantum applications. However, the patterning and poling of TF-PPLN devices today are mostly performed at chip scales, presenting a significant bottleneck for future large-scale nonlinear photonic systems that require the integration of multiple nonlinear components with consistent performance and low cost. Here, we take a pivotal step towards this goal by developing a wafer-scale TF-PPLN nonlinear photonic platform, leveraging ultraviolet stepper lithography and an automated poling process. To address the inhomogeneous broadening of the quasi-phase matching (QPM) spectrum induced by film thickness variations across the wafer, we propose and demonstrate segmented thermal optic tuning modules that can precisely adjust and align the QPM peak wavelengths in each section. Using the segmented micro-heaters, we show the successful realignment of inhomogeneously broadened multi-peak QPM spectra with up to 57% enhancement of conversion efficiency. We achieve a high normalized conversion efficiency of 3802% W−1 cm−2 in a 6 mm long PPLN waveguide, recovering 84% of the theoretically predicted efficiency in this device. The advanced fabrication techniques and segmented tuning architectures presented herein pave the way for wafer-scale integration of complex functional nonlinear photonic circuits with applications in quantum information processing, precision sensing and metrology, and low-noise-figure optical signal amplification.

Ultrastable 3D Heterogeneous Integration via N-Heterocyclic Carbene Self-Assembled Nanolayers.

The commercialization of 3D heterogeneous integration through hybrid bonding has accelerated, and accordingly, Cu-polymer bonding has gained significant attention as a means of overcoming the limitations of conventional Cu-SiO2 hybrid bonding, offering high compatibility with other fabrication processes. Polymers offer robust bonding strength and a low dielectric constant, enabling high-speed signal transmission with high reliability, but suffer from low thermomechanical stability. Thermomechanical stability of polymers was not achieved previously because of thermal degradation and unstable anchoring. To overcome these limitations, wafer-scale Cu-polymer bonding via N-heterocyclic carbene (NHC) nanolayers was presented for 3D heterogeneous integration, affording ultrastable packing density, crystallinity, and thermal properties. NHC nanolayers were deposited on copper electrodes via electrochemical deposition, and wafer-scale 3D heterogeneous integration was achieved by adhesive bonding at 170 °C for 1 min. Ultrastable conductivity and thermomechanical properties were observed by the spatial mapping of conductivity, work function, and force-distance curves. With regard to the characterization of NHC nanolayers, low-temperature bonding, robust corrosion inhibition, enhanced electrical conductivity, back-end-of-line process compatibility, and fabrication process reduction, NHC Cu/polymer bonding provides versatile advances in 3D heterogeneous integration, indicating that NHC Cu/polymer bonding can be utilized as a platform for future 3D vertical chip architectures.

Vapor Deposition of Bilayer 3R MoS2 with Room-Temperature Ferroelectricity.

Two-dimensional ultrathin ferroelectrics have attracted much interest due to their potential application in high-density integration of non-volatile memory devices. Recently, 2D van der Waals ferroelectric based on interlayer translation has been reported in twisted bilayer h-BN and transition metal dichalcogenides (TMDs). However, sliding ferroelectricity is not well studied in non-twisted homo-bilayer TMD grown directly by chemical vapor deposition (CVD). In this paper, for the first time, experimental observation of a room-temperature out-of-plane ferroelectric switch in semiconducting bilayer 3R MoS2 synthesized by reverse-flow CVD is reported. Piezoelectric force microscopy (PFM) hysteretic loops and first principle calculations demonstrate that the ferroelectric nature and polarization switching processes are based on interlayer sliding. The vertical Au/3R MoS2/Pt device exhibits a switchable diode effect. Polarization modulated Schottky barrier height and polarization coupling of interfacial deep states trapping/detrapping may serve in coordination to determine switchable diode effect. The room-temperature ferroelectricity of CVD-grown MoS2 will proceed with the potential wafer-scale integration of 2D TMDs in the logic circuit.

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Since the first report on single-layer MoS2 based transistor, rapid progress has been achieved in two-dimensional (2D) material-based atomically thin electronics, providing an alternative approach to solve the bottleneck in silicon device miniaturization. In this scenario, reliable contact between the metal electrodes and the subnanometer-thick 2D materials becomes crucial in determining the device performance. Here, utilizing the quasi-van der Waals (vdW) epitaxy of metals on fluorophlogopite mica, we demonstrate an all-stacking method for the fabrication of 2D devices with high-quality vdW contacts by mechanically transferring pre-deposited metal electrodes. This technique is applicable for complex device integration with sizes up to the wafer scale and is also capable of tuning the electric characteristics of the interfacial junctions by transferring selective metals. Our results provide an efficient, scalable, and low-cost technique for 2D electronics, allowing high-density device integration as well as a handy tool for fundamental research in vdW materials.

Vertical integration of KTN on SOI wafer

Optical modulators play an important role in communication systems, and silicon has been a focal point in this field thanks to its compatibility with CMOS fabrication. However, silicon’s lack of inherent electro-optic behavior makes it suboptimal for modulation purposes. Conversely, potassium tantalate niobate (KTN) materials boast an improved electro-optic coefficient, presenting a path for improving modulation efficiency. However, limited research exists on KTN materials due to the difficulties associated with their fabrication. Here, a fabrication methodology is described for wafer-scale vertical integration of KTN material onto silicon-on-insulator (SOI) wafers. The resulting devices exhibit a propagation loss of 3.3 dBmm1 and a transition loss within the range of 0.46 to 0.76 dB, which are in agreement with simulations. This method tackles the fabrication challenges and showcases the potential of utilising KTN as the integration material on silicon platform for future optical modulators.

Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD.

Two-dimensional (2D) materials exhibit the potential to transform semiconductor technology. Their rich compositional and stacking varieties allow tailoring materials' properties toward device applications. Monolayer to multilayer gallium sulfide (GaS) with its ultraviolet band gap, which can be tuned by varying the layer number, holds promise for solar-blind photodiodes and light-emitting diodes as applications. However, achieving commercial viability requires wafer-scale integration, contrasting with established, limited methods such as mechanical exfoliation. Here the one-step synthesis of 2D GaS is introduced via metal-organic chemical vapor deposition on sapphire substrates. The pulsed-mode deposition of industry-standard precursors promotes 2D growth by inhibiting the vapor phase and on-surface pre-reactions. The interface chemistry with the growth of a Ga adlayer that results in an epitaxial relationship is revealed. Probing structure and composition validate thin-film quality and 2D nature with the possibility to control the thickness by the number of GaS pulses. The results highlight the adaptability of established growth facilities for producing atomically thin to multilayered 2D semiconductor materials, paving the way for practical applications.

Photonic-electronic integrated circuit-based coherent LiDAR engine

Chip-scale integration is a key enabler for the deployment of photonic technologies. Coherent laser ranging or FMCW LiDAR, a perception technology that benefits from instantaneous velocity and distance detection, eye-safe operation, long-range, and immunity to interference. However, wafer-scale integration of these systems has been challenged by stringent requirements on laser coherence, frequency agility, and the necessity for optical amplifiers. Here, we demonstrate a photonic-electronic LiDAR source composed of a micro-electronic-based high-voltage arbitrary waveform generator, a hybrid photonic circuit-based tunable Vernier laser with piezoelectric actuators, and an erbium-doped waveguide amplifier. Importantly, all systems are realized in a wafer-scale manufacturing-compatible process comprising III-V semiconductors, silicon nitride photonic integrated circuits, and 130-nm SiGe bipolar complementary metal-oxide-semiconductor (CMOS) technology. We conducted ranging experiments at a 10-meter distance with a precision level of 10 cm and a 50 kHz acquisition rate. The laser source is turnkey and linearization-free, and it can be seamlessly integrated with existing focal plane and optical phased array LiDAR approaches.

Bias-tunable temperature coefficient of resistance in Ge transistors

Ge-based bolometers are widely used for near-infrared detection for a broad range of applications such as thermography or chemical analysis. Notably, for the thermometers used in bolometers, integration, scaling, and sensitivity as well as functionality are of utmost importance. In this regard, Ge exhibits a favorable temperature sensitivity due to the relatively low bandgap and a high intrinsic charge carrier concentration. In this work, we demonstrate a nanoscale thermometer for bolometric applications on the base of Ge-on-insulator nanosheets with monolithic Al source/drain contacts envisioned for future wafer-scale integration. Importantly, electrostatic gating of the nanosheets allows the operation as a Schottky barrier field-effect transistor, providing tunability of the energy landscape and the involved charge carrier injection in interaction with the metal-semiconductor junctions. In this approach, the top-gate electrode and drain contact are connected, thus resembling a two-terminal device with bias-tunable temperature coefficient of resistance (TCR) values between 0%/K and −3.8%/K in the temperature range of T = 125–150 K. Moreover, in this configuration, even at room temperature, a maximum TCR value of −1.6%/K is achieved. The bias-tunable TCR exhibited in these devices may enable advanced concepts for room temperature bolometric applications and allow co-integration with nanoelectronics.

Enhanced Photogating Gain in Scalable MoS2 Plasmonic Photodetectors via Resonant Plasmonic Metasurfaces.

Absorption of photons in atomically thin materials has become a challenge in the realization of ultrathin, high-performance optoelectronics. While numerous schemes have been used to enhance absorption in 2D semiconductors, such enhanced device performance in scalable monolayer photodetectors remains unattained. Here, we demonstrate wafer-scale integration of monolayer single-crystal MoS2 photodetectors with a nitride-based resonant plasmonic metasurface to achieve a high detectivity of 2.58 × 1012 Jones with a record-low dark current of 8 pA and long-term stability over 40 days. Upon comparison with control devices, we observe an overall enhancement factor of >100; this can be attributed to the local strong EM field enhanced photogating effect by the resonant plasmonic metasurface. Considering the compatibility of 2D semiconductors and hafnium nitride with the Si CMOS process and their scalability across wafer sizes, our results facilitate the smooth incorporation of 2D semiconductor-based photodetectors into the fields of imaging, sensing, and optical communication applications.

Towards large scale integration of MoS2/graphene heterostructure with ALD-grown MoS2

In the pursuit of ultrathin and highly sensitive photodetectors, a promising approach involves leveraging the combination of light-sensitive two-dimensional (2D) semiconducting transition-metal dichalcogenides, such as MoS2 and the high electrical conductivity of graphene. Over the past decade, exfoliated 2D materials and electron-beam lithography have been used extensively to demonstrate feasibility on single devices. But for these devices to be used in the real-world systems, it is necessary to demonstrate good device performance similar to lab-based devices with repeatability of the results from device to device and a path to large scale manufacturing. To work in this way, a fabrication process of MoS2/graphene vertical heterostructures with a wafer-scale integration in a CMOS compatible foundry environment is evaluated here. Large-scale atomic layer deposition on 8 inch silicon wafers is used for the growth of MoS2 layers which are then transferred on a 4 inch graphene-based wafer. The MoS2/graphene phototransistors are fabricated collectively, achieving a minimum channel length of 10 μm. The results measured on dozen of devices demonstrate a photoresponsivity of 50 A W−1 and a remarkable sensitivity as low as 10 nW at 660 nm. These results not only compete with lab-based photodetectors made of chemical vapor deposition grown MoS2 layers transferred on graphene, but also pave the way for the large-scale integration of these emerging 2D heterostructures in optoelectronic devices and sensors.

Three-dimensional integration of two-dimensional field-effect transistors.

In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as 'More Moore'1 but also introduces multifunctionalities for 'More than Moore'2 technologies. Although silicon-based 3D integrated circuits are commercially available3-5, there is limited effort on 3D integration of emerging nanomaterials6,7 such as two-dimensional (2D) materials despite their unique functionalities7-10. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS2 with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS2 and WSe2 with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS2 FETs (channel length, LCH = 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.

Large-area grown ultrathin molybdenum oxides for label-free sensitive biomarker detection.

The rise of two-dimensional (2D) materials has provided a confined geometry and yielded methods for guiding electrons at the nanoscale level. 2D material-enabled electronic devices can interact and transduce the subtle charge perturbation and permit significant advancement in molecule discrimination technology with high accuracy, sensitivity, and specificity, leaving a significant impact on disease diagnosis and health monitoring. However, high-performance biosensors with scalable fabrication ability and simple protocols have yet to be fully realized due to the challenges in wafer-scale 2D film synthesis and integration with electronics. Here, we propose a molybdenum oxide (MoOx)-interdigitated electrode (IDE)-based label-free biosensing chip, which stands out for its wafer-scale dimension, tunability, ease of integration and compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication. The device surface is biofunctionalized with monoclonal anti-carcinoembryonic antigen antibodies (anti-CEA) via the linkage agent (3-aminopropyl)triethoxysilane (APTES) for carcinoembryonic antigen (CEA) detection and is characterized step-by-step to reveal the working mechanism. A wide range and real-time response of the CEA concentration from 0.1 to 100 ng mL-1 and a low limit of detection (LOD) of 0.015 ng mL-1 were achieved, meeting the clinical requirements for cancer diagnosis and prognosis in serum. The MoOx-IDE biosensor also demonstrates strong surface affinity towards molecules and high selectivity using L-cysteine (L-Cys), glycine (Gly), glucose (Glu), bovine serum albumin (BSA), and immunoglobulin G (IgG). This study showcases a simple, scalable, and low-cost strategy to create a nanoelectronic biosensing platform to achieve high-performance cancer biomarker discrimination capabilities.

Wafer-scale organic-on-III-V monolithic heterogeneous integration for active-matrix micro-LED displays.

The organic thin-film transistor is advantageous for monolithic three-dimensional integration attributed to low temperature and facile solution processing. However, the electrical properties of solution deposited organic semiconductor channels are very sensitive to the substrate surface and processing conditions. An organic-last integration technology is developed for wafer-scale heterogeneous integration of a multi-layer organic material stack from solution onto the non-even substrate surface of a III-V micro light emitting diode plane. A via process is proposed to make the via interconnection after fabrication of the organic thin-film transistor. Low-defect uniform organic semiconductor and dielectric layers can then be formed on top to achieve high-quality interfaces. The resulting organic thin-film transistors exhibit superior performance for driving micro light emitting diode displays, in terms of milliampere driving current, and large ON/OFF current ratio approaching 1010 with excellent uniformity and reliability. Active-matrix micro light emitting diode displays are demonstrated with highest brightness of 150,000 nits and highest resolution of 254 pixels-per-inch.

From clean room to machine room: commissioning of the first-generation BrainScaleS wafer-scale neuromorphic system

The first-generation of BrainScaleS, also referred to as BrainScaleS-1, is a neuromorphic system for emulating large-scale networks of spiking neurons. Following a ‘physical modeling’ principle, its VLSI circuits are designed to emulate the dynamics of biological examples: analog circuits implement neurons and synapses with time constants that arise from their electronic components’ intrinsic properties. It operates in continuous time, with dynamics typically matching an acceleration factor of 10 000 compared to the biological regime. A fault-tolerant design allows it to achieve wafer-scale integration despite unavoidable analog variability and component failures. In this paper, we present the commissioning process of a BrainScaleS-1 wafer module, providing a short description of the system’s physical components, illustrating the steps taken during its assembly and the measures taken to operate it. Furthermore, we reflect on the system’s development process and the lessons learned to conclude with a demonstration of its functionality by emulating a wafer-scale synchronous firing chain, the largest spiking network emulation ran with analog components and individual synapses to date.

Wafer-Scale Monolithic Integration of Blue Micro-Light-Emitting Diodes and Green/Red Quantum Dots for Full-Color Displays

We demonstrated a simple method for achieving green and red colors by patterning quantum dots (QDs) on GaN-based blue micro-light-emitting diodes (μLEDs) using standard photolithography and dry etching process. The QDs could be patterned as small as 2 μm in size on a 4-inch wafer, revealing the ultra-high resolution and throughput capability of this method. The individual color-converted green and red μLEDs in a size of 10 μm × 10 μm exhibited a peak external quantum efficiency (EQE) of 9.6% and 14.7%, respectively. We also achieved the monolithic integration of red, green, and blue (RGB) μLEDs as a single pixel by sequentially patterning red and green QDs. The color gamut of the RGB μLEDs covered 83.4% of the Rec. 2020 color space in the CIE 1931 diagram. This method is very effective for patterning color-converted QDs with down to 2μm-size-resolution and achieving high performance for red/green μLEDs, while enabling scalable fabrication of full-color μLED displays.