Wafer Samples Research Articles

Direct Determination of Metallic Contamination on and in Wafers Using Laser Ablation Inductively Coupled Plasma Mass Spectrometry

A new analytical technique has been developed for determination of metallic impurities on and in wafers using LA-GED-MSAG-ICP-MS. Up to 300 mm wafer can be analyzed directly without using a small enclosed chamber. Particles generated by a femto-second laser ablation were aspirated together with particle free clean air by an ejector and introduced to the ICP-MS (Inductively Coupled Plasma Mass Spectrometry) via GED (Gas Exchange Device). Particles in air could not be introduced to the plasma of ICP-MS directly because the Ar plasma could not be sustained when air was introduced. The GED exchanged air with Ar efficiently (> 99.98%), the particles came out from GED in Ar gas stream that could be introduced to the plasma of ICP-MS. For quantitation of LA-ICP-MS, MSAG (Metal Standard Aerosol Generation) was used. MSAG could introduce nearly a 100% of aqueous multi-element standard solution to the plasma of ICP-MS, which allowed precise quantitation using the method of standard addition while ablating wafer samples. The technique was used for the following applications:- Metallic contamination mapping of a wafer. Multiple spots (1 cm2/spot) of 300 mm wafer were laser ablated and analyzed by ICP-MS as shown in Fig.1. E6 - E7 atoms/cm2 of detection limit was obtained. The conventional VPD-ICP-MS technique uses a 1 mL scan solution to collect metallic impurities on an entire wafer surface of 300 mm wafer, and the collected solution is analyzed by ICP-MS giving E6 - E7 atoms/cm2 detection limit. It was impossible to get the contamination mapping information at such a low concentration. TRXRF has also been commonly used for the same purpose, but the detection limit is E10 - 12 atoms/cm2.- Particle measurement on a wafer. A spike recovery test of 20 and 50 nm Au nano-particle standard on Si wafer was performed, and individual nano-particle signals were detected by ICP-MS. The number of Au particle recovery was more than 85%. 200 nm SiO2 particles on Si wafer were also detected after the optimization of laser parameters.- Metallic contamination mapping on a wafer bevel. Several metallic contaminants were detected at certain spots of bevel, and E4 atoms of spot contamination could be detected.- Depth profile analysis of an ion implanted wafer. The laser ablation was performed on the same area repeatedly and the profile of As ion implanted wafer could be carried out in atmospheric pressure. This technique was also used for analysis of multi-layer film wafers.This paper explains how the new technique overcame the issues of the conventional LA-ICP-MS technique; why an entire wafer could not be analyzed and why an accurate quantitative analysis was impossible. Figure 1

Effect of soy flour and flour improvers on nutritional value, texture, colour and sensory characteristics of wafer biscuits

Biscuits are a popular and desirable snack food by consumers. Still, the quality of these products decreases during the storage process, so this study focuses on improving the wafer's quality and nutritional value and reducing their fragility by partially replacing wheat flour with soybean flour in the following proportions: 5% (T1), 10% (T2), 15% (T3), 20% (T4), and adding ammonium carbonate in different quantities. The sensory evaluation showed that the best wafer treatment was supported with 15% soy flour and 150 g of ammonium carbonate. At the same time, the mean for sensory evaluation is 8.80. Also, the results of the chemical analysis (protein, moisture, fat, carbohydrate, ash, fibre) texture and colour after direct manufacturing and after three months of storage. The result showed a significant increase in the percentage of protein and fat from 6.56±0.30 to 12.19 ± 0.35, 11.56±0.10 to 19.64±0.55, respectively the moisture content was higher in the control was 3.88±0.02 for wafer sample 2.47±0.13, while fibre was 1.93±0.15. The carbohydrates in the control sample were higher than in other treatments. Texture and colour were improved compared with the control. Commercial-batter biscuits with high nutritional value content and high-quality properties can be prepared by replacing wheat flour with 15% soy flour and adding 150 g of ammonium carbonate.

Direct Determination of Metallic Contamination on and in Wafers Using Laser Ablation Inductively Coupled Plasma Mass Spectrometry

A new analytical technique was developed for determination of metallic impurities in wafers using LA-GED-MSAG-ICP-MS. Up to 300 mm wafer can be analyzed directly without using a small, enclosed chamber. Particles generated by a femto-second laser ablation were aspirated together with a particle free clean air by an ejector and introduced to the ICP-MS (Inductively Coupled Plasma Mass Spectrometry) via GED (Gas Exchange Device). The air was exchanged by Ar gas and the particles came out from GED in Ar gas stream. For quantitation of LA-ICP-MS, MSAG (Metal Standard Aerosol Generation) was used. MSAG could introduce nearly a 100% of aqueous multi-element standard solution to the plasma of ICP-MS, which allowed precise quantitation using the method of standard addition while ablating wafer samples. This paper describes how the new analytical technique works for ultra-trace level of metallic impurities in wafers.

Wavelength-multiplexed multi-mode EUV reflection ptychography based on automatic differentiation

Ptychographic extreme ultraviolet (EUV) diffractive imaging has emerged as a promising candidate for the next generationmetrology solutions in the semiconductor industry, as it can image wafer samples in reflection geometry at the nanoscale. This technique has surged attention recently, owing to the significant progress in high-harmonic generation (HHG) EUV sources and advancements in both hardware and software for computation. In this study, a novel algorithm is introduced and tested, which enables wavelength-multiplexed reconstruction that enhances the measurement throughput and introduces data diversity, allowing the accurate characterisation of sample structures. To tackle the inherent instabilities of the HHG source, a modal approach was adopted, which represents the cross-density function of the illumination by a series of mutually incoherent and independent spatial modes. The proposed algorithm was implemented on a mainstream machine learning platform, which leverages automatic differentiation to manage the drastic growth in model complexity and expedites the computation using GPU acceleration. By optimising over 200 million parameters, we demonstrate the algorithm's capacity to accommodate experimental uncertainties and achieve a resolution approaching the diffraction limit in reflection geometry. The reconstruction of wafer samples with 20-nm high patterned gold structures on a silicon substrate highlights our ability to handle complex physical interrelations involving a multitude of parameters. These results establish ptychography as an efficient and accurate metrology tool.

Use of plasma process diagnostic sensors for the monitoring of in situ dry cleaning of plasma enhanced chemical vapor deposition chamber

A potential source of particle contamination due to poorly maintained PECVD chamber condition forces to perform in situ dry cleaning also actively employed before the wet-cleaning chamber maintenance period. In this paper, we demonstrate the use of plasma process diagnostic sensors, optical emission spectroscope, and quadrupole mass spectrometer for in situ plasma monitoring of the dry-cleaning step. It is worthwhile to know the thin film residue on the chamber’s inner wall, but it is difficult to collect the deposited thin film sample from the wall since the preparation of the sample from the equipment is impossible. To alleviate the concern, we prepared silicon wafer samples mounted on the chamber sidewall over the prolonged exposure of the SiO2 deposition process, and the collected sensory data were investigated under the dry-cleaning condition. The residue film obtained through the experiment was characterized by Fourier transform infrared, x-ray photoelectron spectroscopy, atomic force microscopy, and scanning electron microscopy. We found a useful insight into the chamber dry-cleaning end point detection application through residual gas analysis, and the results contribute to process engineers setting up the in situ dry-cleaning recipe to make sure that subsequent deposition can be consistently maintained.

Determination of the confocal volume of a Raman microscope for probing for single-molecule SERS applications

The confocal volume in Raman spectroscopy refers to the sample region from which scattered photons are collected by a confocal Raman spectrometer, defined by the cone-shaped light beam generated by the microscope’s objective lens in the confocal configuration. The confocal volume is characterized by the confocal height and confocal area, which determine the range of heights and lateral positions, respectively, from which the spectrometer effectively collects scattered photons. In the present study, the confocal height and area were calculated for different configurations of a confocal Raman spectrometer to obtain the confocal volume using a Si wafer sample. Understanding the confocal volume was essential to optimize Raman microscopy experiments and estimate the number of molecules generating surface-enhanced Raman scattering spectroscopy spectra in a single-molecule regime.

Study of the Grinding Process by Friction of Cereal Grains in Stone Mills

The grinding process via friction at the micro-scale in a mill with stones is considered a variable combination of contacts, with two-body (the asperities of lower millstone in direct contact with the asperities of upper millstone) and three-body (micro-particles of ground seeds trapped between the asperities of lower and upper stones of the mill) contacts. Three elements are described: (1) the mechanical contact of the asperities of the lower and upper millstones to predict pressures on asperities by modeling; (2) tests on a millstone sample covered with grinding particles; and (3) tests on a wafer sample formed by the millstones with the grinding particles between them. This paper highlights the combined effects of the micro-scale friction via individual measurements, using an analytical model to sum these effects and validating the model by performing several experiments. An efficiency grind by friction assumes the grain’s movement and interaction between the seeds and solid surfaces, and is highlighted through theoretical and experimental studies. Topography analysis of the surface of the millstones reveals the model of microscopic frictional force. Endpoint measurements (the traces of the surface topography evolution) enable model verification in the grinding process. Thus, the results obtained in the grinding process in the stone mills via friction have practical utility through research benefits. Therefore, they allow for the improvement of quality, reliability, flexible grinding, quality control of the flours, and uniformity degree (fineness/shredding).

Multi-detector simultaneous sampling design in the spot-scanning defects detection system

With the decreases in semiconductor critical dimension and increases in circuit intricacy, the impact of wafer defects on the yield and manufacturing cost of integrated circuits is becoming increasingly significant. In this paper, a multimodal spot-scanning defect detection system designed for unpatterned wafer surfaces is introduced. The defect detection system's mechanics, electronics, and software are introduced, focusing on presenting a multi-detector simultaneous sampling design. The signal sampling is based on the position triggering of the rotary stage encoder. The focused illumination spot is scanned in a helical trajectory relative to the wafer in coordination with the motion of the linear stage and rotary stage. The signal detection is carried out synchronously, and the signal sampling is triggered by rotary stage encoder position pulses to achieve equally spaced sampling. The detector signals are trans-impedance amplified and transmitted differentially to transfer the analogue signals from the optical head to the main control board. Under FPGA control, the main control board completes the simultaneous sampling and signal processing through nine high-precision 16-bit SAR(successive-approximation-register) ADCs(analogue-to-digital converter) under the trigger signal. The defect detection system is designed with a pixel resolution of 4 × 4 μm, requiring a sampling position error of less than 1 pixel and an inter-channel position deviation of less than 0.1 pixel. The rotary stage prototype has a design speed of 120 rpm, and the positioning accuracy of the encoder is ±8 arcsec. Therefore, the maximum sampling position error is 1.94 μm for a 4-inch wafer sample. The maximum phase deviation between the nine channels is 32.5 ns, and the maximum position deviation is 20.4 nm.

Machine learning for rapid inference of critical dimensions in optical metrology of nanopatterned surfaces

Scatterometry-based metrology has the capability to perform high-throughput inspection of large-area nanopatterned surfaces. It utilizes physics-based dependencies between reflectance spectra of light scattered from nanopatterned surfaces and the geometric parameters, or so-called Critical Dimensions (CDs), of such nanopatterns. This paper proposes a novel method for rapid and accurate inference of CDs of complex nanopatterned surfaces through the use of a Machine Learning (ML)-based inverse problem mapping, coupled with the use of a strategic feature selection algorithm, which also originated from the ML domain. Specifically, Latin Hypercube Sampling was utilized to create a multi-dimensional grid of CDs which are used as inputs for physics-based simulations of scattered light spectra for nanopatterned surfaces with those CDs. Simulation results are used to build the training data for the ML model relating simulated reflectance spectra with the corresponding CDs. The Extreme Gradient Boosting (XGBoost) algorithm was utilized to realize the aforementioned mapping. In addition, most informative spectral wavelengths were selected using Recursive Feature Elimination (RFE) algorithm based on the feature importance scores obtained from XGBoost. Capabilities of the newly proposed approach were evaluated through inspection of a semiconductor wafer sample with hourglass patterns, which are characterized by eight CDs. It was observed that the proposed method is capable of real-time CD metrology of large-area nanostructured surfaces with complex nanopatterns, with accuracy and repeatability comparable to that of Scanning Electron Microscopy.

Importance of rheological properties in enrobing efficiency of dark chocolate: application in wafer products

SummaryIn this study, the rheological properties of dark chocolate used for enrobing in wafer production were modified with the use of lecithin and polyglycerol polyricinoleate (PGPR), and its effects on the final product were investigated. Lecithin was added to the dark chocolate from 0.1 to 0.8 g per 100 g in increments of 0.1 g, then, 0.10, 0.15, and 0.20 g per 100 g PGPR were combined separately with 0.40 g per 100 g lecithin containing sample. There were significant differences in the enrobing ratios, colour, texture, and sensory parameters of the wafer samples (P < 0.05) enrobed with dark chocolate, in which lecithin and PGPR were used together, due to the changes in the flow behaviour of the chocolate. The wafers enrobed with emulsifier‐free dark chocolate had the highest enrobing ratio (72.3%), while it was 45% in the sample enrobed with dark chocolate containing 0.40 g per 100 g lecithin + 0.20 g per 100 g PGPR. In parallel with the decrease in the enrobing ratio, changes occurred in the textural hardness and fracturability values of the samples. On the other hand, as the enrobing ratio decreased, the structure of the wafer sheets became more prominent during consumption, resulting in an increase in the sensory evaluation scores.

Rectangular Amplitude Mask-Based Auto-Focus Method with a Large Range and High Precision for a Micro-LED Wafer Defects Detection System.

Auto-focus technology plays an important role in the Micro-LED wafer defects detection system. How to accurately measure the defocus amount and the defocus direction of the Micro-LED wafer sample in a large linear range is one of the keys to realizing wafer defects detection. In this paper, a large range and high-precision auto-focus method based on a rectangular amplitude mask is proposed. A rectangular amplitude mask without a long edge is used to modulate the shape of the incident laser beams so that the spot shape distribution of the reflected laser beam on the sensor changes with the defocus amount of the wafer sample. By calculating the shape of the light spots, the defocus amount and the defocus direction can be obtained at the same time. The experimental results show that under the 20× microscopy objective, the linear range of the auto-focus system is 480 μm and the accuracy can reach 1 μm. It can be seen that the automatic focusing method proposed in this paper has the advantages of large linear range, high accuracy, and compact structure, which can meet the requirements of the Micro-LED wafer defects detection equipment.

Use of the Airy beam to extend the micro-hole measurement range of an OCT system

Optical coherence tomography (OCT) has the advantage of high precision in measuring micrometre-scale precision structures, but its measurement range is limited by the correlation with Rayleigh length of Gaussian beam. Therefore, this study used the Airy beam to extend the focal depth of the OCT system. The system’s coupled power was increased by 7.34 times when the sample position was at an optical defocus of 3 mm. Measurements of the resolution plate and silicon wafer sample showed that Airy beam OCT had a lateral resolution of 7.4 μm and the focal depth was >6 mm. While the focal depth of the Gaussian beam OCT with the equivalent lateral resolution was less than 1 mm. This improved OCT system demonstrates significant potential for sample measurements at large aspect ratios in the industrial surface detection field.

Optical Metrology of Critical Dimensions in Large-Area Nanostructure Arrays With Complex Patterns

AbstractIt was recently demonstrated that scatterometry-based metrology has the capability to perform high-throughput metrology on large-area nanopatterned surfaces. However, the way this approach is currently pursued requires an a priori generated library of reflectance spectra to be simulated for an exhaustive set of possible underlying critical dimensions (CDs) characterizing the measured nanopatterns. Generating this library is time consuming and can be infeasible for complex patterns characterized by a large number of CDs. This article addresses the aforementioned drawback of optical inspection of CDs of nanopatterned surfaces through the use of an inverse problem-based optimization methodology coupled with a recently introduced approach for efficient organization of the library of previously simulated reflectance spectra. Specifically, for each physically measured reflectance spectrum, the best matching simulated spectrum is sought in the initial incomplete library in order to serve as the initial guess for the inverse problem optimization process. Through that optimization process, further refinements of the best matching simulated spectra are conducted to obtain sufficiently accurate estimates of the CDs characterizing the inspected nanopattern geometries. Capabilities of the newly proposed approach are evaluated through inspection of semiconductor wafer samples with hourglass patterns characterized by eight CDs. It was observed that one can obtain significantly faster measurements of CDs compared to inspection times associated with scanning electron microscopy, while at the same time not deteriorating the corresponding Gage Repeatability and Reproducibility. In conclusion, this method enables real-time, accurate, and repeatable metrology of CDs of large-area nanostructured surfaces with complex nanopatterns.

Cross-Chamber Data Transferability Evaluation for Fault Detection and Classification in Semiconductor Manufacturing

Unit-to-unit variation among the production chambers is a long-lasting challenge for Fault Detection and Classification (FDC) development in the semiconductor industry. Currently, various methods are applied for knowledge transfer among chambers and generalized FDC model development. However, the existing methods cannot give a quantitative or qualitative measure for cross-chamber data transferability evaluation. This research proposes a novel methodology for data transferability evaluation and important sensor screening, which can serve as a data quality evaluation tool for any FDC model. In this research, firstly, Time Series Alignment Kernel (TSAK) is incorporated into Multidomain Discriminant Analysis (MDA) algorithm to achieve sensor-based domain generalization. Then, domain-invariant features are directly extracted for sensor visualization. After that, Fisher’s criterion ratios of the labeled good wafer samples and defective ones are computed based on the domain-invariant features of each sensor to quantitatively estimate how easy it is to transfer knowledge of each sensor among chambers, i.e., data transferability evaluation. Lastly, the proposed method develops a Recursive Feature Elimination (RFE)-based sensor selection algorithm to qualitatively analyze the importance of each sensor channel and identify the critical sensor subset. In this study, validation of the proposed method is based on two open-source datasets from real production lines.

An oscillator-driven, time-resolved optical pump/NIR supercontinuum probe spectrometer.

We present a novel, to the best of knowledge, time-resolved, optical pump/NIR supercontinuum probe spectrometer suitable for oscillators. A NIR supercontinuum probe spectrum (850-1250 nm) is generated in a photonic crystal fiber, dispersed across a digital micromirror device (DMD), and then raster scanned into a single element detector at a 5Hz rate. Dual modulation of pump and probe beams at disparate frequencies permits simultaneous measurement of both the bare reflectance R and its photoinduced change ΔR through lock-in detection, allowing for continuously self-normalized measurement of ΔR/R. Example data are presented on a germanium wafer sample that demonstrate for signals of order ΔR/R ∼ 10-3, a 2.87nm spectral resolution and ≲400fs temporal resolution pre-recompression, and comparable sensitivity to standard time-resolved, amplifier-based pump-probe techniques.

Influence of silicon particle morphology on laser-induced plasma properties

In this work, Si particles of varying sizes and a bulk Si wafer are exposed to high-energy nanosecond-pulsed laser excitation. The subsequent laser-induced plasma is characterized using a suite of diagnostic techniques, including spatiotemporal species imaging via high-speed videography and high-resolution gated spectroscopy. The intensity and location of various species in the plasma (e.g., Si I and Si II) are tracked as a function of time over two time regimes, 2–10 μs and 20–80 μs, and show differences in impurities and peak intensities between the various particle sizes and compared to the Si wafer. Electron densities under these conditions decrease from ≈1.8 to 0.8 × 1017 cm−3 from 2 to 8 μs, while plasma excitation temperatures determined from the Boltzmann method range from 9200 to 8000 K over the same time window. The powdered Si samples have characteristically larger and more intense plasmas than the wafer sample. The laser-induced air-shock from energetic materials (LASEM) method was employed on these materials, in concert with their acoustic response, to establish their relative microsecond energy releases. While the powders have similar laser-induced shock velocities, they appear to have differences in their acoustic response which roughly scales as a function of plasma carbon content. The proposed reasons for these shock and acoustic trends are discussed, which include particle size and morphology, surface impurities, and dispersion and flow within the plasma.

Contactless excitation of acoustic resonance in insulating wafers

Contactless excitation and detection of high harmonic acoustic overtones in a thin insulator single crystal are described using radio frequency spectroscopy techniques. Single crystal [001] silicon wafer samples were investigated, one side covered with a Nb thin film, the common starting point for the fabrication of quantum devices. The coupling between electromagnetic signals and mechanical oscillation is achieved from the Lorentz force generated by an external magnetic field. This method is suitable for any sample with a metallic surface or covered with a thin metal film. High resolution measurements of the temperature dependence of the sound velocity and elastic constants of silicon are reported and compared with known results.

CO2 quantification in silicate glasses using µ-ATR FTIR spectroscopy

Abstract A new method for measurements of high-CO2 concentrations in silicate glasses was established using micro–attenuated total reflectance (µ-ATR) Fourier transform infrared (FTIR) spectroscopy in the mid-IR (MIR) region. We studied two glass/melt compositions, namely leucitite and granite, to cover samples in which CO2 is dissolved as carbonate ions (CO32−) or as CO2 molecules (CO3mol). In the leucitite glasses a carbonate absorption doublet with maxima at 1510 and 1430 cm–1 has shown to clearly separate from aluminosilicate lattice vibrations at lower wavenumbers. Due to the lower sensitivity of the µ-ATR method, we were able to measure high-CO2 contents (cCO2 >0.5 wt%) in experimental silicate glasses that would only be measurable with great difficulties using established transmission MIR measurements due to detector linearity limit effects even with very thin sample wafers. The peak heights of the 1430 cm–1 ATR band (A1430), normalized to the integral of the T-O lattice vibrations (T = Si, Al, Fe) at about 930 cm–1 (Int930) show a linear trend with CO2 contents in the range 0.2–4.3 wt%, yielding a linear correlation with cCO2 (wt%) = 0.4394 ± 0.006·A1430·10000/Int930. The normalization of the CO2 related band to a lattice vibration accounts for variations in the quality of contact between ATR crystal and sample, which has a direct effect on signal intensity. In granitic glasses, where CO2 is dissolved as CO3mol only, the asymmetric stretching vibration at 2350 cm–1 overlaps with the signal of atmospheric, gaseous CO2. As the ATR signal of dissolved CO2 is very weak, the atmospheric signal may dominate the spectrum. Since the absorbance spectrum is calculated by division of the single-channel sample spectrum by a single-channel reference spectrum measured in air, keeping the laboratory and spectrometer atmosphere as constant as possible during spectral acquisition can resolve the problem. Nonetheless, a procedure to subtract the signal of remaining atmospheric CO2 may still be required for the spectral evaluation. We studied a series of 5 granitic glasses with CO3mol contents of 0.08 to 0.27 wt% and found an excellent linear relation between CO2 concentration and lattice vibration normalized ATR intensity of the 2350 cm–1 band: cCO2 (wt%) = 0.2632 ± 0.0016·A2350·10000/Int990. Although the CO3mol concentrations in our granitic glass series can still be analyzed without major difficulties by conventional transmission IR spectroscopy, our data demonstrate the potential of the ATR method for samples with higher CO2 contents or for samples where a high spatial resolution is required (melt inclusions, vesicular or partially crystallized glasses). The lower limits of the ATR method are approximately 0.2 wt% CO2 dissolved as carbonate groups or 0.1 wt% CO2 (or slightly less) dissolved in molecular form.

Study of the Utilization of Spent Grain from Malt Whisky on the Quality of Wafers

This study aimed at determining the quality parameters of the wafer formulated with the addition of grain spent (SG), resulting from the obtainment of whisky. In this sense, wafers were formulated from chickpea flour, spent grain, wild garlic paste, golden flaxseed, and hemp seeds. These food products were analyzed in terms of texture, density, and pH of the batter, but also of the final product for proximate analysis, baking loss, texture, water activity, color, antioxidant capacity, water holding capacity and oil holding capacity, microstructure, and sensorial analysis. The addition of spent grain in the wafer formulation led to products with a high acceptability, the texture of the batter underwent changes due to the addition of spent grain, all parameters increased, and only adhesiveness decreased. The density and pH of the samples with SG decreased. The fracturability of the products with SG decreased with the addition of SG compared to the control sample, and the color becomes darker, influenced by the specific color of the SG. With the addition of spent grain, it increases the fiber and protein content, the antioxidant capacity, but also the baking loss due to the fibers contained in it. The microstructure of samples with the addition of SG shows a heterogeneous distribution of pores on the cross section of the samples, with larger pores in the center of the wafer samples.

Evidence of Charging and Storage at the MoS2/Si Interface

Non-volatile memory chips are important in devices for data storage, where demand kept increasing and the demand of large capacity of storage grew with the development in technology. Flash memory is one of the non-volatile memory devices that has a simple structure that is based on CMOS basic structure. Flash memory was introduced by Toshiba in 1984, which is an electrically erasable/programable non-volatile memory device [1]. Due to the development new technology the demand for size scale down of the memory structure was high, at which the size was kept on being reduced. At sizes less than 65nm flash memory started to show different problem including charge loss and the stress-induced leakage current, due to the tunnelling oxide thickness reduction. [2,3]. The structure of the flash memory has been developed to overcome the issues due to size reduction by introducing nanoparticles to the floating gate, which showed huge development. This development made researchers explore different nanoparticles including 2D materials. 2D materials has distinctive electrical, optical, chemical, and mechanical properties that makes them interesting to be implemented in new technology [4]. One of the interesting 2D materials is Molybdenum disulfide (MoS2). MoS2 have a multitude of features such as high strength, flexibility and has better quantum yield than bulk MoS2 [5]. 2D films of MoS2 can be widely used in various devices for their electronic, optical, and catalytic properties [6]. In this work MoS2 nanoflakes were bonded to silicon to study the charge transport at the interface.The initial bulk MoS2 was in crystal form, which was used to prepare the MoS2 nanoflakes. The preparation procedure for the MoS2 flakes was by using mechanical exfoliation technique. Nitto SPV224 PVC tape had been used to exfoliate bulk MoS2, where part of the bulk MoS2 crystal is placed on the sticky part of the tape. The tape is then folded on the MoS2 piece with the tape surrounding the crystal on the top and bottom. The tape is then separated from each other, which results in exfoliation of the MoS2 into flakes. The more the steps are repeated of this process, the thinner the flakes are. The flakes on the tape were transferred to a p-Si wafer on a hot plate at 50C and bonded to create the MoS2/Si interface.The achieved MoS2 nanoflakes on p-Si wafer sample had been imaged using AFM topography and conductivity measurements. The AFM images were collected to identify the distribution of the flakes. AFM images showed clear flakes on the p-Si wafer at which they were distributed randomly over the surface. The thickness of single monolayer flakes measured was 0.65nm and two monolayer flakes were 1.3 nm. Furthermore, conductive AFM was employed to obtain the IV curve over the flake and obtain their electrical properties, where forward and reverses scanning was done showing a hysteresis loop. The hysteresis observed showed a voltage window gap of around ∆Vth=0.5 V. This indicates electron tunneling and charge storage at the MoS2/Si interface or in the MoS2. Finally, the results, highlight the potential use of 2D MoS2 flakes in future no power memory devices.