The Lorentz single oscillator model is widely utilized to describe the electron-phonon interaction in solids. The use of this model to calculate the dielectric function and optical parameters of compound semiconductors represents a novel approach in materials science which may lead to develop new materials with tailored optical properties and consequently can offer vast applications in areas such as quantum computing and quantum information processing. This work presents direct calculations of the complex dielectric function and some optical parameters, such as refractive index, extinction coefficient, and reflectivity for some selected III-V and II-VI compound semiconductors using Lorentz oscillator model. The dielectric and optical dispersion parameters among the infrared and visible electromagnetic spectra follows the so-called Transmission-Absorption-Reflection-Transmission (TART) trend. The TART curve provides information about how a material interacts with light at different wavelengths, which is crucial for understanding and optimizing various optoelectronic devices. Moreover, dielectric loss functions such as loss tangent, surface energy loss function and volume energy loss function are investigated. The refractive index dispersion is analyzed using Wemple–DiDomenico single effective oscillator model and Sellmeier equation. The energy of the effective single oscillator (Eo) and the dispersion energy (Ed) are estimated.