α-Ga2O3 has been attracted a focus of attention in ultraviolet detector applications due to its wide bandgap and cost-effective synthesis technology. This work presents Al-doped α-Ga2O3 nanorod arrays (AG-NRAs) synthesized by a facile hydrothermal method. The optical and photoelectric properties were systematically investigated. By adjusting Al-doping level, the bandgap can be regulated within a certain range from 4.39 to 4.78 eV. Solar blind UV photoresponse relied on the bandgap has been also studied by direct photocurrent measurements using a sandwich-structured FTO/AG-NRAs/FTO photoelectric device. The highest photocurrent density of 44.1pA/cm2 has been achieved in the specimen with Al-doping ratio of 0.15 with a rapid response time of 0.25 s. This finding offers an in-depth vision for bandgap engineering in AG-NRAs, and alternative approach for fabricating solar-blind UV detector.