Vertical Silicon Nanowire Research Articles

Mimicking the retinal neuron functions by a photoresponsive single transistor with a double gate

To realize a low-cost neuromorphic visual system, employing an artificial neuron capable of mimicking the retinal neuron functions is essential. A photoresponsive single transistor neuron composed of a vertical silicon nanowire is proposed. Similar to retinal neurons, various photoresponsive characteristics of the single transistor neuron can be modulated by light intensity as well as wavelength and have a high responsivity to green light like the human eye. The device is designed with a cylindrical surrounding double-gate structure, enclosed by an independently controlled outer gate and inner gate. The outer gate has the function of selectively inhibiting neuron activity, which can mimic lateral inhibition of amacrine cells to ganglion cells, and the inner gate can be utilized for the adjustment of the firing threshold voltage, which can be used to mimic the regulation of photoresponsivity by horizontal cells for adaptive visual perception. Furthermore, a myelination function that controls the speed of information transmission is obtained according to the inherent asymmetric source/drain structure of a vertical silicon nanowire. This work can enable photoresponsive neuronal function using only a single transistor, providing a promising hardware implementation for building miniaturized neuromorphic vision systems at low cost.

Scalable Large-Area 2D-MoS2/Silicon-Nanowire Heterostructures for Enhancing Energy Storage Applications.

Two-dimensional (2D) transition-metal dichalcogenides have shown great potential for energy storage applications owing to their interlayer spacing, large surface area-to-volume ratio, superior electrical properties, and chemical compatibility. Further, increasing the surface area of such materials can lead to enhanced electrical, chemical, and optical response for energy storage and generation applications. Vertical silicon nanowires (SiNWs), also known as black-Si, are an ideal substrate for 2D material growth to produce high surface-area heterostructures, owing to their ultrahigh aspect ratio. Achieving this using an industrially scalable method paves the way for next-generation energy storage devices, enabling them to enter commercialization. This work demonstrates large surface area, commercially scalable, hybrid MoS2/SiNW heterostructures, as confirmed by Raman spectroscopy, with high tunability of the MoS2 layers down to the monolayer scale and conformal MoS2 growth, parallel to the silicon nanowires, as verified by transmission electron microscopy (TEM). This has been achieved using a two-step atomic layer deposition (ALD) process, allowing MoS2 to be grown directly onto the silicon nanowires without any damage to the substrate. The ALD cycle number accurately defines the layer number from monolayer to bulk. Introducing an ALD alumina (Al2O3) interface at the MoS2/SiNW boundary results in enhanced MoS2 quality and uniformity, demonstrated by an order of magnitude reduction in the B/A exciton photoluminescence (PL) intensity ratio to 0.3 and a reduction of the corresponding layer number. This high-quality layered growth on alumina can be utilized in applications such as for interfacial layers in high-capacity batteries or for photocathodes for water splitting. The alumina-free 100 ALD cycle heterostructures demonstrated no diminishing quality effects, lending themselves well to applications that require direct electrical contact with silicon and benefit from more layers, such as electrodes for high-capacity ion batteries.

Surface roughening and hemi-wicking: Synergistic impact on flow boiling

This study advances thermal management in flow boiling by investigating the synergy between nanoscale surface structures, hemi-wicking, and bubble dynamics during phase changes, with a particular focus on innovative surface morphology. Nanowires, known for enhancing heat transfer through surface roughening and interfacial wicking, play a crucial role. We highlight the importance of morphological roughening and its synergy with hemi-wicking in enhancing critical heat flux (CHF) in flow boiling. We demonstrate that surfaces functionalized with vertical silicon nanowires show a significant increase in CHF compared to smooth surfaces. This enhancement is attributed to improved liquid supply and prevention of bubble pinning, thus maximizing heat dissipation. However, the absence of hemi-wicking on nano-inspired surfaces unexpectedly leads to a substantial CHF reduction compared to smooth counterparts. By visualizing bubble dynamics under forced convection, we reveal the critical role of hemi-wicking in sustaining continuous liquid supply and postponing the onset of film boiling by ensuring an anti-pinning effect of bubbles. These findings offer valuable insights into interface functionalization and surface morphology design for efficient heat dissipation, emphasizing the often-overlooked role of hemi-wicking in preventing bubble pinning. This knowledge is pivotal for developing compact and high-efficiency cooling technologies.

The dopant (n- and p-type)-, band gap-, size- and stress-dependent field electron emission of silicon nanowires.

This study investigates the electron field emission (EFE) of vertical silicon nanowires (Si NWs) fabricated on n-type Si (100) and p-type Si (100) substrates using catalyst-induced etching (CIE). The impact of dopant types (n- and p-types), optical energy gap, crystallite size and stress on EFE parameters has been explored in detail. The surface morphology of grown SiNWs has been characterized by field emission scanning electron microscopy (FESEM), showing vertical, well aligned SiNWs. Optical absorption and Raman spectroscopy confirmed the presence of the quantum confinement (QC) effect. The EFE performance of the grown nanowire arrays has been examined through recorded J-E measurements under the Fowler-Nordheim framework. The Si NWs grown on p-type Si showed a minimum turn-on field and also a higher field enhancement factor. The band-bending diagram also suggests a lower barrier height of p-type Si NWs compared to n-type Si NWs, which plays a key role in enhancing the EFE performance. These investigations suggest that dopant types (n- and p-types), band gap, crystallite size and stress influence the EFE parameters and Si NWs grown on p-type Si (100) substrates are much more favorable for the investigation of EFE properties.

Impact of exposing lithium metal to monocrystalline vertical silicon nanowires for lithium-ion microbatteries

Silicon has attracted considerable attention for use as high-capacity anodes of lithium-ion microbatteries. However, its extreme volume change upon (de-)lithiation still poses a challenge for adoption as it leads to severe active lithium loss that shortens the cycle life. Here, we fabricate three-dimensional monocrystalline vertical silicon nanowires on a silicon wafer using low-cost metal-assisted chemical etching, then cover them with lithium using thermal evaporation prior to the battery operation as the pre-lithiation step, to investigate its impact on electrochemical performance. To reveal the underlying physical and electrochemical mechanisms, we also process a comparative planar monocrystalline silicon. We find that pre-lithiation results in improved (de-)lithiation behavior, especially in planar silicon-based cells, while silicon nanowire-based cells exhibit low capacity in early cycles. This study sheds light on the surface design and structural modification of monocrystalline silicon nanowires with respect to pre-lithiation by lithium thermal evaporation.

Analysis of synthesized doped vertical silicon nanowire arrays for effective sensing of nitrogen dioxide: As gas sensors

In the present study, the controllable fabrication of silicon nanowires (Si NWs) with vertical alignment was accomplished using metal assisted chemical etching (MACE). The different characteristics, such as structural, morphological, chemical, optical, and dielectric properties were analyzed using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Raman spectroscopy, ultraviolet-visible diffuse reflectance spectroscopy (UV-DRS), and LCR [inductance (L), capacitance (C), and resistance (R)] meter (volume of the gas-sensing chamber is 650 mm3). It was revealed from the morphological study i.e., from the FESEM that p-type Si NWs are smaller in size than n-type Si NWs which is attributable to the energy band gap. The optical band gap (Eg) is observed to increase from 1.64 to 1.89 eV with the decreasing of the crystallite size and the optical reflection spectra of the Si NWs show a shift toward a lower wavelength (blue shift). Moreover, Raman spectra verified the red-shifted, asymmetrically broadened Raman line-shapes, which provides information about the size confinement effect in Si NWs. The MACE approach is excellent for synthesizing nanowire structures for use in gas-sensing applications due to its flexibility. The sensitivity of synthesized Si NWs was tested for NO2 gas. The sensor method is unique based on the testing of the device in the presence of a test gas because the use of the gas-sensing setup has the potential to measure the change in resistance by varying frequency, temperature, and time.

The Array of Si Nanowires Covered with Ag Nanoparticles by ALD: Fabrication Process and Optical Properties

In this work, we proposed a method for creating an Ag/Si composite structure consisting of an array of vertical silicon nanowires (SiNWs) decorated with silver nanoparticles (AgNPs). A two-stage metal-assisted chemical etching of Si was used to obtain the SiNW array, and atomic layer deposition was used to fabricate the AgNPs. A uniform distribution of AgNPs along the SiNW height was achieved. The measured characteristics by spectroscopic ellipsometry directly established the presence of AgNPs deposited on the SiNWs. The height of the sublayers and the fractions of Si and Ag in them were determined using the multilayer model and the effective Bruggeman medium approximation in the interpretation of the experimental data. For AgNP layers deposited on an Si wafer surface, the thickness (from 2.3 to 7.8 nm) and complex dielectric functions were verified within the framework of the Drude–Lorentz model. The optical properties of Ag/SiNW structures with complex spatial geometry were simulated in the COMSOL Multiphysics software. The expected localization of the electric field on the surface and near the AgNP was observed as a result of the plasmon resonance excitation. The calculated enhancement factor reached 1010, which indicates the possibility of using such structures as substrates for surface-enhanced Raman scattering.

Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation.

Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalyzed top-down etching process. The piezoresistance response of these SiNW arrays was analyzed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly 1 pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation were determined for isostatic pressure below atmospheric pressure.

Performance Assessment and Optimization of Vertical Nanowire TFET for Biosensor Application

This paper reports the performance assessment of vertical silicon nanowire TFET (V-siNWTFET) design for biosensor applications using dielectric-modulation and gate underlap technique. The sensitivity of the V-siNWTFET is recognizing by immobilizing the different biological molecules such as lipids, biotin, uricase, protein, Gox, streptavidin, uriease, zein etc. in the cavity region which is created under the gate electrode and source oxide. The performance analysis is observed by varying the relative permittivity of the different biomolecules and analyzes the parametric variation both for neutral and charged biomolecules. The sensitivity of the biosensor has been detecting in the terms of drain current (ID), threshold voltage (VTH), subthreshold slope (SS), transconductance (gm), and ION/IOFF ratio. The proposed device structure has capable to reduce the leakage currents and high sensitivity biosensor design in the nanoscale regimes. The obtained best optimum parameters of the proposed devices are ION (1.37E−08 A/µm), IOFF (9.44E−19 A/µm), SS (29.97 mV/dec) and ION/IOFF (4.29E + 10) ratio with gate work-function (ϕgate = 4.8 eV) and uniformly doped (1 × 10–19 cm−3) silicon nanowire at drain to source voltage (VDS = 1.0 V). The higher sensitivity of the proposed V-siNWTFET for Biosensor is observed for Zein biomolecules (K = 5).

Dual-Mechanism-Driven Strategy for High-Coverage Detection of Serum Lipids on a Novel SALDI-MS Target.

Serum lipid metabolites have been emerging as ideal biomarkers for disease diagnosis and prediction. In the current stage, nontargeted or targeted lipidomic research mainly relies on a liquid chromatography-mass spectrometry (LC-MS) platform, but future clinical applications need more robust and high-speed platforms. Surface-assisted laser desorption ionization mass spectrometry (SALDI-MS) has shown excellent advantages in the high-speed analysis of lipid metabolites. However, the platform in the positive ion mode is more inclined to target a certain class of lipids, leading to the low coverage of lipid detection and limiting its practical translation to clinical applications. Herein, we proposed a dual-mechanism-driven strategy for high-coverage detection of serum lipids on a novel SALDI-MS target, which is a composite nanostructure comprising vertical silicon nanowires (VSiNWs) decorated with AuNPs and polydopamine (VSiNW-Au-PDA). The performance of laser desorption and ionization on the target can be enhanced by charge-driven desorption coupled with thermal-driven desorption. Simultaneous detection of 236 serum lipids (S/N ≥ 5) including neutral and polar lipids can be achieved in the positive ion mode. Among these, 107 lipid peaks were successfully identified. When combined with VSiNW-Au-PDA and VSiNW chips, 479 lipid peaks can be detected in serum samples in positive and negative ion modes, respectively. Based on the platform, serum samples from 57 hepatocellular carcinoma (HCC) patients and 76 healthy controls were analyzed. After data mining, 14 lipids containing different lipid types (TAG, CE, PC) were selected as potential lipidomic biomarkers. With the assistance of an artificial neural network, a diagnostic model with a sensitivity of 92.7% and a specificity of 96% was constructed for HCC diagnosis.

Tissue Imprinting on 2D Nanoflakes-Capped Silicon Nanowires for Lipidomic Mass Spectrometry Imaging and Cancer Diagnosis.

Spatially resolved tissue lipidomics is essential for accurate intraoperative and postoperative cancer diagnosis by revealing molecular information in the tumor microenvironment. Matrix-free laser desorption ionization mass spectrometry imaging (LDI-MSI) is an emerging attractive technology for label-free visualization of metabolites distributions in biological specimens. However, the development of LDI-MSI technology that could conveniently and authentically reveal molecular distribution on tissue samples is still a challenge. Herein, we present a tissue imprinting technology by retaining tissue lipids on 2D nanoflakes-capped silicon nanowires (SiNWs) for further mass spectrometry imaging and cancer diagnosis. The 2D nanoflakes were prepared by liquid exfoliation of molybdenum disulfide (MoS2) with nitrogen-doped graphene quantum dots (NGQDs), which serve as both intercalation agent and dispersant. The obtained NGQD@MoS2 nanoflakes were then decorated on the tip of vertical SiNWs, forming a hybrid NGQD@MoS2/SiNWs nanostructure, which display excellent lipid extraction ability, enhanced LDI efficiency and molecule imaging capability. The peak number and total ion intensity of different lipids species on animal lung tissues obtained by tissue imprinting LDI-MSI on NGQD@MoS2/SiNWs were ∼4-5 times greater than those on SiNWs substrate. As a proof-of-concept demonstration, the NGQD@MoS2/SiNWs nanostructure was further applied to visualize phospholipids on sliced non small cell lung cancer (NSCLC) tissue along with the adjacent normal tissue. On the basis of selected feature lipids and machine learning algorithm, a prediction model was constructed to discriminate NSCLC tissues from the adjacent normal tissues with an accuracy of 100% for the discovery cohort and 91.7% for the independent validation cohort.

Fast response and broadband self-powered photodetectors based on CZTS/SiNW core-shell heterojunctions for health monitoring

In this work, fast response and broadband self-powered photodetectors based on heterojunctions of vertical smooth silicon nanowires (SiNWs) were proposed, which were achieved through spin-coating p-CZTS on top of n-SiNWs adopting a simple two-step method. First, CZTS was uniformly and tightly attached to the sidewalls of SiNWs in the form of nanoparticles. The prepared CZTS/SiNWs core-shell heterojunctions exhibited typical rectification characteristics in dark and excellent light response characteristics in light illumination. Our device could perform self-driven detection under the UV-VIS-NIR light irradiation without an external energy supply. The responsivity and specific detectivity were estimated to be 14 mAW-1 and 1.5 × 1011 Jones, which can be improved to 0.35 AW-1 and 1.2 × 1013 Jones at −1.5 V bias. In addition, the present device also possesses distinct advantages of a large Ilight/Idark ratio exceeding 4.25 × 104, fast response rate with rise/fall times of 1.4/14.2 μs, and outstanding environmental stability. Finally, a heart rate health monitoring application by CZTS/SiNWs detector was proposed. All these results may pave a way for the real application of the self-driven detector in the field of health monitoring in the future.

Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode

Production of high-aspect-ratio silicon (Si) nanowire-based anode for lithium ion batteries is challenging particularly in terms of controlling wire property and geometry to improve the battery performance. This report demonstrates tunable optimization of inductively coupled plasma reactive ion etching (ICP-RIE) at cryogenic temperature to fabricate vertically-aligned silicon nanowire array anodes with high verticality, controllable morphology, and good homogeneity. Three different materials [i.e., photoresist, chromium (Cr), and silicon dioxide (SiO2)] were employed as masks during the subsequent photolithography and cryogenic ICP-RIE processes to investigate their effects on the resulting nanowire structures. Silicon nanowire arrays with a high aspect ratio of up to 22 can be achieved by tuning several etching parameters [i.e., temperature, oxygen/sulfur hexafluoride (O2/SF6) gas mixture ratio, chamber pressure, plasma density, and ion energy]. Higher compressive stress was revealed for longer Si wires by means of Raman spectroscopy. Moreover, an anisotropy of lattice stress was found at the top and sidewall of Si nanowire, indicating compressive and tensile stresses, respectively. From electrochemical characterization, half-cell battery integrating ICP-RIE-based silicon nanowire anode exhibits a capacity of 0.25 mAh cm−2 with 16.67% capacity fading until 20 cycles, which has to be improved for application in future energy storage devices.

A Vertical Silicon Nanowire Based Single Transistor Neuron with Excitatory, Inhibitory, and Myelination Functions for Highly Scalable Neuromorphic Hardware.

A single transistor neuron (1T-neuron) is demonstrated by using a vertically protruded nanowire from an 8 in. silicon (Si) wafer. The 1T-neuron adopts a gate-all-around structure to completely surround the Si nanowire (Si-NW) to make a floating body and allow aggressive downscaling. The Si-NW is composed of an n+ drain at the top, n+ source at the bottom, and p-type floating body at the middle, which are self-aligned vertically. Thus, it occupies a small footprint area. The gate controls an excitatory/inhibitory function. In addition, myelination of a biological neuron that changes membrane capacitance is mimicked by an inherently asymmetric source/drain structure. Two spiking frequencies at the same input current are controlled by whether the neuron is myelinated or unmyelinated. Using the vertical 1T-neuron, pattern recognition is demonstrated with both measurements and semiempirical circuit simulations. Furthermore, handwritten numbers in the MNIST database are recognized with accuracy of 93% by software-based simulations. Applicability of the vertical 1T-neuron to various neural networks is verified, including a single-layer perceptron, multilayer perceptron, and spiking neural network.

Ultrasensitive and High Reproducible Detection of Urinary Metabolites Using the Tip–Contact Extraction Method Coupled with Negative LDI-MS

More and more evidence has proved that urinary metabolites can instantly reflect disease state. Therefore, ultra-sensitive and reproducible detection of urinary metabolites in a high-throughput way is urgently desirable for clinical diagnosis. Matrix-free laser desorption/ionization mass spectrometry (LDI-MS) is a high-throughput platform for metabolites detection, but it is encountered by severe interference from numerous salts in urine samples, because the crystallized urine salt on dried samples could result in poor reproducibility in LDI-MS detection. The present work proposed a tip-contact extraction (TCE) technique to eliminate interference from the urine salt. Vertical silicon nanowire arrays decorated with the fluorinated ethylene propylene film (FEP@VSiNWs) could effectively extract metabolites from the urine sample dropping on its surface. High salt tolerance was observed in the subsequent LDI-MS detection of the metabolites extracted on the tip of FEP@VSiNWs even in the presence of 1 M urea. Stable and reproducible mass spectra for non-target metabolic analysis were obtained in real urine samples with different dilution folds. Urinary metabolites collected from bladder cancer (BC) patients were reliably profiled by the TCE method coupled with negative LDI-MS. Based on this platform, potential metabolic biomarkers that can distinguish BC patients and normal controls were uncovered.

PH Sensitivity Improvement of Vertical Silicon-Nanowire Extended-Gate Ion-Sensitive Field Effect Transistor

The extended-gate ion-sensitive field-effect transistor (EGISFET) is essential to the field of bio-chemical sensing. It has been reported that the nano-textured gate ISFET is suitable for high pH sensitivity. The small distance between each nano-structure results in the high sensitivity. However, due to the difficulties of manufacturing process, the distance between each nano-structure will no longer be shrunk, which means that it will be a challenge to keep improving sensitivity. To address this issue, we turn to make good use of the space above these nano-structures. Thus, a series of vertical silicon nanowire (SiNW) sensing membranes with different heights was developed in EGISFET pH sensors. The vertical SiNW sensing membranes were fabricated using the electroless etching technique called metal-assisted chemical etching (MACE). The ultra-thin Au nanomesh served as a catalyst in MACE process was replicated from a reusable porous anodic aluminium oxide (AAO) membrane. By photo-lithography the sensing area on the SiNW sensing membrane was defined. The transfer characteristics of such vertical SiNW EGISFET pH sensors exhibited a higher sensitivity (75.86 mV/pH) than that of the conventional planar EGISFET pH sensors (38.53 mV/pH) for the different pH solutions (pH 4, pH 7 and pH 10). The scanning electron microscopy images of SiNW with different heights are also presented.

Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs

The low frequency noise performance of Gate-All-Around Nanowire (NW) or Nanosheet (NS) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, taking account of the impact of the device architecture, i.e., junctionless (JL) versus inversion-mode (IM) and process variations for the gate metal. The horizontal devices are characterized by 1/f noise, dominated by the number fluctuation mechanism, so that the power spectral density (PSD) is directly proportional with the trap density in the gate stack. The average 1/f noise PSD is becoming smaller going from single NW transistors on Silicon-on-Insulator substrates, to stacked horizontal NS devices on bulk silicon and, finally, vertical NWFETs with a substrate source contact. At low currents and frequencies below 1 kHz the 1/f noise in the vertical NWs is, in contrast to the horizontal devices, controlled by mobility fluctuations. In these devices white noise is observed above 1 kHz.

Vertical Tip-to-Tip Interconnection p–n Silicon Nanowires for Plasmonic Hot Electron-Enhanced Broadband Photodetectors

A p–n junction photodetector, formed between the tip-to-tip interconnection of vertical silicon nanowire arrays, was fabricated by using a facile and economic process with remarkable performances. ...

Perovskite/Silicon‐Nanowire‐Based Hybrid Heterojunctions for Fast and Broadband Photodetectors

A hybrid photodetector fabricated with a halide perovskite and silicon nanowire (SiNW) heterojunction for broadband detection ranging from near‐ultraviolet to near‐infrared is reported. The device fabrication is conducted by directly coating chemically etched vertical SiNW arrays with perovskite thin films and nanofibers produced from liquid precursors. The optimized perovskite thin film/SiNW heterojunction‐based device under 532 nm illumination exhibits excellent spectral responsivity of 13 A W−1, high specific detectivity reaching 1013 Jones at 0.3 V external bias, and fast rise/fall times of 22.2/17.6 μs. The device shows very good stability under ambient conditions, even after 30 days of storage. Overall, this simple, all‐solution‐based hybrid photodetector offers great potential for the future integrated optoelectronic devices.

Perfluorinated polymer modified vertical silicon nanowires as ultra low noise laser desorption ionization substrate for salivary metabolites profiling

Metabolites in the body fluid are becoming a rich source of disease biomarkers. Developing an effective and high throughput detection and analysis platform of metabolites is of great importance for potential biomarker discovery and validation. Matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF-MS) has been successfully applied in rapid biomolecules detection in large scale. However, non-negligible background interference in low molecule-weight region still constitutes a main challenge even though various nanomaterials have been developed as an alternative to traditional organic matrix. In this work, a novel composite chip, silicon nanowires loaded with fluorinated ethylene propylene (FEP@SiNWs) was fabricated. It can serve as an excellent substrate for nanostructure-initiator mass spectrometry (NIMS) detection with ultra-low background noise in low molecular weight region (<500 Da). Ion desorption efficiency and internal energy transfer of FEP@SiNWs were studied using benzylpyridinium salt and tetraphenylboron salt as thermometer chemicals. The results indicated that a non-thermal desorption mechanism might be involved in the LDI process on FEP@SiNWs. Owing to the higher LDI efficiency and low background interference of this novel substrate, the metabolic fingerprint of complex bio-fluids, such as human saliva, can be sensitively and stably acquired. As a proof of concept, FEP@SiNWs chip was successfully used in the detection of salivary metabolites. With the assistance of multivariate analysis, 22 metabolic candidates (p < 0.05) which can discriminate type 2 diabetes mellitus (2-DM) and healthy volunteers were found and identified. The role of these feature metabolites in the metabolic pathway involved in 2-DM was confirmed by literature mining. This work demonstrates that FEP@SiNWs-based NIMS might be served as an efficient and high throughput platform for metabolic biomarker exploration and clinical diagnosis.