Novel Hg3In2Te6 (MIT) single crystals with 30mm in diameter and 110mm in length have been reproducibly grown by the vertical Bridgman (VB) method. The crystalline phase was confirmed by X-ray diffraction to be free of transformation. Rocking curves using a double-crystal X-ray diffractometer showed that the full widths at half maximum of the as-grown MIT crystals were in the range of 150–317arcsec. The electrical resistivity, carrier density and mobility from Hall measurements at room temperature were 1.79×103Ωcm, 1.01×1013cm−3 and 3.44×102cm2V−1s−1, respectively. The existing defects in the as-grown MIT crystals were displayed and the average etch pits density (EPD) using the modified Chen etchant solution was (2–6)×104cm−2 in the whole ingot.