Abstract
We compared the crystallinity of the Bi-2212 single crystals grown by the horizontal Bridgman (HB) method with those grown by the vertical Bridgman (VB) method in terms of resistivity, ρ. It was clarified that crystals far inside the ingot grown by HB method showed the equivalent crystallinity to crystals grown by VB method, whereas crystals near the surface of the ingot grown by HB method showed the similar crystallinity to crystals grown by TSFZ method, which is sensitive to the growth atmosphere.
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