Variation Of Electrical Properties Research Articles

Amorphous to Polycrystalline Phase Transition of In Situ Annealed Ge Films: Structural, Morphological, Optical, and Electrical Characteristics

AbstractRadio Frequency (RF) sputtered germanium (Ge) thin films were deposited on glass substrate at in situ annealing temperatures of 400, 450, 500, 550, and 600 °C. X‐ray diffraction (XRD) and Raman spectroscopy revealed that the Ge films were initially amorphous but transformed to polycrystalline after annealing at 450 °C. Further annealing up to 600 °C resulted in improved crystallinity. Strain studies of the films using XRD and Raman showed compressive (out‐of‐plane) and tensile (in‐plane) strains, respectively, throughout all the annealing temperatures. The surface morphology of the films was recorded using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM), which showed grain growth with annealing temperatures. The optical energy gap evaluated from absorption spectra for crystalline films decreased with annealing temperature, indicating improvement in crystallinity of films. The resistivity of the films deduced using current‐voltage measurements was found to decrease with annealing temperature, which can be attributed to enhancement in grain size. This study establishes a correlation between strain, grain size, optical energy gap, and electrical resistivity with temperature for Ge films deposited on glass substrates. Thus, the present study provides insights into variation in physical and electrical properties of films with in situ annealing temperature for their applicability in optoelectronic devices.

Effect of gamma and neutron irradiations on the physical, magnetic and electrical properties of Ni–Cu–Cd nano-ferrites

The physical, magnetic and electrical properties variations for the sol-gel auto combustion synthesized Ni0.3Cu0.2Cd0.5Fe2O4 by gamma (γ) and neutron irradiations dose applications are studied in this research. The irradiation have been done through 2.0 × 1011 and 1.9 × 1012 cm−2s−1 per min fast neutron flux and γ rays from the research reactor of TRIGA MARK-II and 64 KCi cylindrical 60Co source respectively within room temperature. The rate of 1 Mrad and 3 Mrad dose is 1.067 Mrad/h. XRD results show greater intensities for the irradiation doses. Due to the redistribution of ions, changes in the lattice constant have been found by the irradiation through the results of XRD and Rietveld Refinement process. The saturated magnetization obtained from the VSM is found to decrease first by the irradiation and then increase drastically. This analysis is performed by the popular pulse field technique of hysteresis loop for nano ferrites and further analyzed by LAS. The frequency dependent characteristics such as dielectric constant, electric modulus, impedance analysis and ac conductivity are inspected for all samples with both types of irradiation process. The electrical modulus Cole-Cole plots insure the dominant property as electric stiffness for investigated ferrties. Extreme decrease has been found in the dielectric natures which also show good agreement in the higher ac conductivity nature at the higher frequencies. Electrical parametric dependent overlapping two semicircles which are not complete have been found in the plots of Cole-Cole for impedance data. The energy of activation for the process of diffusion decreases by the irradiation.

Love wave propagation in a smart composite structure of linear and exponential functionally graded porous piezoelectric material

Functionally graded materials (FGMs) have emerged as a promising avenue for enhancing the performance and longevity of surface acoustic wave (SAW) devices. This importance is gained due to gradual variation in functional properties of FGMs. In this paper, a mathematical model of a piezoelectric layer overlying a functionally graded porous piezoelectric (FGPP) layer resting on the elastic substrate is presented for the study of Love waves. The material parameters of the FGPP layer are considered to vary linearly and exponentially with the thickness of the layer. The solutions of governing equations corresponding to the FGPP layer are obtained by the Wentzel Kramers Brillouin (WKB) method. Dispersion equations are derived for both electrically open and shorted boundaries, linear and exponential gradation in both mechanical and electrical parameters, and for gradation in mechanical parameters alone as well. After numerical computation, dispersion curves are plotted to investigate the influence of wavenumber, type of gradation, extent of gradation, and type of boundaries on the phase and group velocity. The phase velocity decreases with wavenumber and is found more for linear gradation in comparison to exponential gradation. The electromechanical coupling factor is analyzed for different propagating modes of Love waves, in the case when gradation in mechanical properties is considered, the electromechanical coupling factor is greater than that when variation in both mechanical and electrical properties is considered. It is also observed that the tailoring of gradation can help to get the suitable value of the electromechanical coupling factor. The insights obtained from these findings can offer valuable contributions toward advancing the functionality and efficiency of SAW devices, there by bolstering their applicability in various technological domains.

In-situ characterization of dynamic electromechanical properties for PVC gel actuators

PVC gel actuator possesses the advantages including low driving voltage, substantial deformation, and high output force, making it ideal for applications in micro-lenses, assistive rehabilitation, and soft robotics. However, there remains a lack of in-situ characterization and quantitative analysis of plasticizer migration and charge transfer within PVC gel, resulting in an unclear understanding of changes in the plasticizer content, mechanical and electrical properties of the enrichment layer. In this study, we conducted in-situ characterization of plasticizer migration and charge transfer within PVC gel, and analyzed the change of plasticizer content, mechanical and electrical properties. In-situ Raman spectroscopy results revealed that plasticizer migration takes time to reach equilibrium, resulting in a gradient distribution of plasticizer content within the enrichment layer. Furthermore, in-situ broadband impedance analysis demonstrated that stimulation voltage induces changes in the material's electrical properties, transitioning from uniform electrical characteristics to distinct properties between the gel layer and the enrichment layer. Notably, we established a mathematical relationship between modulus and plasticizer content, revealing a gradient distribution of modulus within the enrichment layer. This study not only contributes to understanding the underlying mechanisms of mechanical and electrical properties variations within PVC gel, but also provides valuable insights for optimizing the actuation performance of PVC gel actuators.

Analyzing the variations in electrical, structural and magnetic properties of zinc-doped MnFe2O4 ferrite obtained via co-precipitation

Analyzing the variations in electrical, structural and magnetic properties of zinc-doped MnFe2O4 ferrite obtained via co-precipitation

(Ge2S8)100-xTex chalcogenide glasses: Physico-mechanical study for NIR optical devices

To better understand the variations in physical, mechanical, and electrical properties, (Ge2S8)100-xTex chalcogenide glasses have been synthesized. These glasses encompass a composition range of 0 ≤ x ≤ 12. The mechanical properties have been studied by determining the longitudinal (νL) and transverse (νT) ultrasonic velocities. A network structure evaluation with composition has been performed via parameters like coordination number (<Nr>), crosslinking density (DCL), glass transition temperature (Tg), etc. Also, the elastic parameters trend values have been associated with the decrease in the cohesive energy value of the system. An overall physical analysis of the Ge-S-Te systems reveals that the system's rigidity and the cross-linking density are decreasing. Within the temperature range of 300–420 K, the temperature dependency of the dark conductivity and photoconductivity has been investigated. The intensity-dependent photoconductivity is governed by a power law, with intensity (Iph = Gδ) with δ lying between 0.5 and 1. The photosensitivity values reveal that the glassy system may be suitable for applications in optoelectronic devices. A correlation among the parameters has been established by calculating elastic parameters and conductivity measurements and evaluating the network structure theoretically. The present efforts clarify the composition-structure dependence and relationship in the Ge-S-Te glass series.

Pulsed Force Kelvin Probe Force Microscopy-A New Type of Kelvin Probe Force Microscopy under Ambient Conditions.

Kelvin probe force microscopy (KPFM) is an increasingly popular scanning probe microscopy technique used for nanoscale imaging of surface potential for various materials, such as metals, semiconductors, biological samples, and photovoltaics, to reveal their surface work function and/or local accumulation of charges. This featured review outlines the operation principles and applications of KPFM, including several typical commercially available variants. We highlight the significance of surface potential measurements, present the details of the method operation, and discuss the causes of the limitation on spatial resolution. Then, we present the pulsed force Kelvin probe force microscopy (PF-KPFM) as an innovative improvement to KPFM, which provides an enhanced spatial resolution of <10 nm under ambient conditions. PF-KPFM is promising for the characterization of heterogeneous materials with spatial variations of electrical properties. It will be especially instrumental for investigating emerging perovskite photovoltaics, heterogeneous catalysts, 2D materials, and ferroelectric materials, among others.

Study on irradiation effect and damage mechanism in cascode GaN HEMT irradiated by 10 MeV electron

This study investigated the irradiation effect of cascode-structure GaN HEMT (High Electron Mobility Transistor) devices, employing high-energy electrons with an energy of 10 MeV and irradiation doses ranging from 5 to 80 Mrad(Si). The variation of electrical properties of the device under annealing condition was analyzed. Geant4 and TCAD simulations were used to analyze the irradiation effect and damage mechanisms. The results show that the threshold voltage has obvious negative drift and the drain current increases after irradiation. The threshold voltage deviation amplitude of the device increases with the increase of irradiation dose, and the maximum deviation is 1.41V. Annealing at high temperatures (80 °C, 120 °C and 145 °C) partially restores the electrical properties, with a 0.49 V restoration in threshold voltage at 145 °C. Geant4 simulations reveal that enhanced Si MOSFET is more susceptible to total dose effects. TCAD simulations of enhanced Si MOSFET devices demonstrate an increase in electric field intensity, trapped electron concentration, and hole concentration in Si and SiO2 layers with the increase of irradiation dose. These findings can provide support for the space application and irradiation hardening of cascode GaN HEMT devices.

Modulation on structure and electric properties by tantalum of lead‐free NaNbO3 ceramics

AbstractThe variation of structural and electric properties is investigated via different characterization methods for NaNbO3 ceramics modified with Ta5+ ions. At room temperature, substitution of Ta5+ ions can effectively induce the phase coexistence and transition between orthorhombic antiferroelectric P and orthorhombic ferroelectric Q phase in NaNb1‐xTaxO3 ceramics. Thus, the ferroelectric and piezoelectric properties could be regulated with the maximum value of d33 (~37.3) at x = 0.05. Besides, with increasing temperature, multiple phase transitions are demonstrated through dielectric, XRD, and in situ Raman results. Moreover, the temperature of various phase transitions gradually shifts toward lower temperature with increasing Ta5+ ions. Correspondingly, the modulation mechanism is also discussed based on the evolution of Raman vibration. This work is instructive for regulatable applications of NaNbO3‐based materials.

Fractionation of cassava pectins and their detailed structural analyses using various pectinolytic enzymes

In this study, we analyzed the pectin structure within the pulp of cassava. Cassava pectin, derived from cassava pulp treatment at 120 °C for 90 min, was separated into four fractions (CP-P, CP-SD1, CP-SD2F, and CP-SD2R) based on variations in water solubility, electrical properties, and molecular weights. Sugar composition analysis demonstrated an abundance of homogalacturonan (HG) in CP-P and CP-SD2F, rhamnogalacturonan I (RG-I) in CP-SD2R, and neutral sugars in CP-SD1. Because RG-I possesses a complex structure, we analyzed CP-SD2R using various pectinolytic enzymes. Galactose was the major sugar in CP-SD2R accounting for 49 %, of which 65 % originated from arabinogalactan I, 9 % from galactose and galactooligosaccharides, 5 % from arabinogalactan II, and 11 % from galactoarabinan. Seventy-four percent of arabinose in CP-SD2R was present as galactoarabinan. The methylation (DM) and acetylation (DAc) degrees of cassava pectin were 11 and 15 %, respectively. The HG and RG-I regions exhibited DAc values of 5 and 44 %, respectively, signifying the high DAc of RG-I compared to HG. Information derived from the structural analysis of cassava pectin will enable efficient degradation of pectin and cellulose, leading to the use of cassava pulp as a raw material for biorefineries.

Orientation-dependent Electrical and Optical Characteristics of non-epitaxial Al-doped ZnO thin films

Based on the theory of crystal anisotropy, it is proposed to improve electrical and optical performance by adjusting the orientation growth of Al-doped ZnO thin films. AZO thin films with preferred (002) and (103) orientation were deposited by stress regulation in the magnetic control sputtering system. The electrical and optical performance for (002) and (103) preferred thin films with identical texture strength and film thickness were analysed in detail. Compared to the conventional (002) preferred AZO thin films, (103) preferentially oriented AZO films exhibit lowering 34.2 % resistivity at the cost of reducing 2.1 % visible light transmittance. XPS fitting analysis of the O1s peak reveals that differences in oxygen vacancy concentration between the two orientations are primarily responsible for variations in electrical properties. It's a promising method by adjusting the orientation growth to improve electrical and optical performance of AZO thin films.

Tailoring electrical properties of PVC/PEC/Co3O4 nanocomposites by electron beam irradiation for advanced medium voltage cable applications

This study aimed to investigate the effects of electron beam irradiation on the structural, optical, and electrical properties of polyvinyl chloride/pectin (PVC/PEC) nanocomposites incorporating hexagonal nanoplate Co3O4. Hexagonal nanoplate Co3O4 was synthesized and incorporated into PVC/PEC blends at 5 wt%. The nanocomposites were subjected to electron beam irradiation at varying doses (0, 10, 20, and 30 kGy). Various characterization techniques, including XRD, UV–Vis spectroscopy, AC conductivity, and dielectric measurements, were employed to analyze the irradiated samples. Additionally, electric field distribution simulations were performed for a 33 kV cable model. XRD analysis revealed the retention of Co3O4 crystallinity up to 30 kGy, while the polymer matrix showed degradation above 10 kGy. The optical bandgap decreased from 2.25 eV to 1.90 eV with increasing irradiation dose, indicating changes in the electronic structure. The optimized AC conductivity (37.17 × 10−6 S m−1) and minimum relative permittivity (2.28) were achieved for the 30 kGy irradiated sample with 5 wt% Co3O4. The electric potential distribution gradually decreased from 33,000 V to zero V. The systematic variations in structural, optical, and electrical properties demonstrated controlled tuning of charge transport mechanisms, making these nanocomposites potentially suitable for advanced cable systems. The simulation results showed that the inclusion of Co3O4 at 30 kGy helped maintain a uniform electric field distribution in the 33 kV cable model compared to an unfilled cable.

Variation of electrical properties with temperature for polyethylene oxide doped with 0.1 wt. % iodine

The electrical properties of thin films made of polyethylene oxide (PEO) dispersed with dopants fixed amount of iodine (0.1 wt. %) were studied using the AC impedance technique. The films were prepared by electrically casting method. In this present work, the variation of AC electrical conductivity with temperatures ranging from 30 oC to 55 oC at a frequency of 200 kHz for (PEO) film doped with 0.1wt. % iodine and undoped (PEO) film were studied. Physical quantities and parameters such as AC conductivity, impedance, dielectric constant, and dielectric loss, were determined. The observed values of the impedance (Z), dielectric constant ('), dielectric loss ("), and AC-conductivity (σAC) showed temperature dependence. It was found that the dielectric constant and the dielectric loss of the prepared thin films increased with doped (0.1wt. %) iodine complexes and also increased with the increase of temperature according to the polarization processes.

Electrical and mechanical properties variation of Al2O3–CaO-CNT(3,3) nanomaterial due to Al vacancy and temperature: DFT approach

Al2O3–CaO-CNT(3,3) nanomaterial has demonstrated excellent electrical and mechanical properties in the absence of defects suitable for applications in microelectronics, batteries, and fuel cells. It is impossible to develop materials without the presence of defects. Therefore, this research work was instituted to investigate the electrical and mechanical properties of this nanomaterial in the presence of VAl defect (a defect with lower formation energy in Al2O3) through DFT. The calculations were based on the Perdew, Burke, and Ernzerh (PBE) exchange-correlation functional, which uses the generalized-gradient approximation of an all-electron technique. The nanomaterial's spin-up and spin-down energy gaps (EG) increased due to the defect, from 0.007 eV to 0.000 eV–0.560 eV and 0.129 eV respectively. However, these values are still lower than that of Al2O3, which is widely used as an insulator. The lowest and highest EG recorded was at 0 °C and 60 °C for spin down, and at 0 °C and 80 °C for spin up respectively. The presence of the defect in the nanomaterial also led to the degradation of some of the mechanical properties majorly along (0-10), where the maximum bulk modulus decreases from 48.73 GPa to 8.40 GPa, the compressibility also increases from 56.82 GPa to 90.68 GPa.

Electrical Characterization of Epoxy Nanocomposite under High DC Voltage.

This work studies the direct current breakdown characteristics of unfilled epoxy and epoxy nonconductive nanocomposites (SiO2,MgO and Al2O3). It also examines the variation of electrical properties in epoxy nanocomposites. The novel aspect of this study is that the samples of Epoxy nanocomposite were exposed to high voltages of up to six kilo volts for three hours using field electron microscopy under high vacuum conditions (10-5 mbar). The current emitted from these samples was measured at three different intervals of time. In addition, the influence of high voltage on the permittivity, loss factor (tan(δ)), and conductivity of the epoxy nanocomposite was studied. This evaluation was conducted before and after applying the voltage at room temperature, The frequency range extends from 10-2-10-7 Hz using the Novo Control Alpha-A analyzer. Current-voltage characterization was performed through field electron microscopy. The samples were characterized by scanning electron microscopy-energy dispersive X-ray spectroscopy and Fourier Transform Infrared Spectroscopy. The unfilled epoxy exhibited structural degradation, resulting in the formation of holes when exposed to high voltages of up to six kilo volts, leading to a reduction in electrical properties. Nevertheless, the addition of nanoparticles shows a significant increase in the operational lifetime of the epoxy nanocomposite. The degree of increase in the lifetime of epoxy composite varied depending on several factors such as the type of NPs introduced and their respective sizes. The epoxy/Al2O3 nanocomposite comparing with epoxy/MgO and epoxy/SiO2 nanocomposite showed elevated resistance to direct current breakdown strength and maintaining its dielectric.

Effect of ultrasonic bonding and lamination on electrical performance of copper indium gallium (de)Selenide CIGS thin film photovoltaic solar panel

This paper aims to study the effect of ultrasonic aluminum (Al) bonding and lamination processes on the electrical performance of copper indium gallium (di)selenide (CIGS) thin film photovoltaic (TFPV) solar panels. Ultrasonic Al bonding on the MoSe2 layer of the CIGS TFPV solar panel was performed in three configurations: eight bonds, 16 bonds, and parallel configurations. The lamination process was performed on the Al bonds with MoSe2 layers of the CIGS TFPV solar panel. Ultrasonic bonding and lamination processes significantly affect the electrical performance of CIGS TFPV solar panels. Open circuit voltage, Voc is the least affected electrical characteristic with the application of ultrasonic bonding and lamination processes as compared to short circuit current (Isc), current density (Jsc), maximum power (Pmpp), fill factor (FF), and efficiency. 8-bonds configuration has the highest efficiency, ranging from 11.45% to 13.86% throughout unique connections of I-V measurement, compared to 16-bonds ranging from 7.99% to 10.77%, and parallel configurations, ranging from 9.14% to 11.92%. The notable variations in electrical properties with the processes used to create laminated CIGS TPFV solar panels with ultrasonic Al bonding can be explained by physical examination and lock-in infrared (IR) thermography. The ultrasonic Al bond is best suited to be used as the interconnection mean in the CIGS TFPV solar panel compared to that of conductive adhesive that has been widely applied nowadays.

Smartphone‐based colorimetric determination of some physicochemical properties of polyaniline on flexible cellulose substrate

AbstractPolymer‐based materials are of high potential for application as active materials in contemporary electronic gadgets. The functionality of such materials is highly dependent on their oxidation state and requires fine control during their synthesis. Owing to that, we have designed a cost‐effective, simple, portable, system for calibration and the detection of the optical and electrical properties of polyaniline loaded on a paper substrate using a smartphone‐based colorimetric sensor. The vapor phase polymerization technique was adopted for preparing polyaniline. Colorimetric measurements of polyaniline‐loaded papers were achieved by estimating the hue, saturation and value (HSV) color parameter values using an open‐source smartphone application called “Color Grab (Color Detection)” during synthesis at different time intervals. The proposed sensor relies on the principle of Beer–Lambert law. The rear camera of the smartphone acts as a sensor and captures the light signal from the samples and provides information to the colorimetric app. The colorimetric results showed a promising correlation between the color parameter values with their electrical properties. The optical absorbance results of all polyaniline‐loaded papers are also in accordance with the H parameter values. The proposed sensor can be used as a portable smartphone‐based point‐of‐care testing kit to bring in‐situ control during synthesis.Highlights Conducting polymer on flexible cellulose substrate. Smartphone‐based visual colorimetric sensor. Biodegradable and environment‐friendly electronic material. Variation of electrical properties in terms of hue values. Cheap, portable sensor for point‐of‐care testing.

Fabrication of highly conductive phosphorous-doped nc-SiCx:H thin film on PET

Plasma enhanced chemical vapor deposition (PECVD) method has been utilized to fabricate phosphorous-doped hydrogenated nanocrystalline silicon carbide (P-doped nc-SiCx:H) thin films on polyethylene terephthalate (PET) substrate. With the aim at obtaining highly conductive thin films, H2/Ar mixed dilution has been applied for creating plasma during deposition, and the variation of structural, electrical and optical properties with H2/Ar flow ratio RH have been systemically investigated through a series of characterizations. Results show that the highly crystallized P-doped nc-SiCx:H thin film can be prepared while the properties are controllable through adjusting RH. In the case of RH = 0.75, the maximum dark conductivity (6.42 S cm−1) and a wide optical bandgap (1.93 eV) are attained. Finally, detail discussion has been made to illustrate the growth mechanism of the flexible P-doped nc-SiCx:H thin films.

Self-indicating polymers: a pathway to intelligent materials.

Self-indicating polymers have emerged as a promising class of smart materials that possess the unique ability to undergo detectable variations in their physical or chemical properties in response to various stimuli. This article presents an overview of the most important mechanisms through which these materials exhibit self-indication, including aggregation, phase transition, covalent and non-covalent bond cleavage, isomerization, charge transfer, and energy transfer. Aggregation is a prevalent mechanism observed in self-indicating polymers, where changes in the degree of molecular organization result in variations in optical or electrical properties. Phase transition-induced self-indication relies on the transformation between different phases, such as liquid-to-solid or crystalline-to-amorphous transitions, leading to observable changes in color or conductivity. Covalent bond cleavage-based self-indicating polymers undergo controlled degradation or fragmentation upon exposure to specific triggers, resulting in noticeable variations in their structural or mechanical properties. Isomerization is another crucial mechanism exploited in self-indicating polymers, where the reversible transformation between the different isomeric forms induces detectable changes in fluorescence or absorption spectra. Charge transfer-based self-indicating polymers rely on the modulation of electron or hole transfer within the polymer backbone, manifesting as changes in electrical conductivity or redox properties. Energy transfer is an essential mechanism utilized by certain self-indicating polymers, where energy transfer between chromophores or fluorophores leads to variations in the emission characteristics. Furthermore, this review article highlights the diverse range of applications for self-indicating polymers. These materials find particular use in sensing and monitoring applications, where their responsive nature enables them to act as sensors for specific analytes, environmental parameters, or mechanical stress. Self-indicating polymers have also been used in the development of smart materials, including stimuli-responsive coatings, drug delivery systems, food sensors, wearable devices, and molecular switches. The unique combination of tunable properties and responsiveness makes self-indicating polymers highly promising for future advancements in the fields of biotechnology, materials science, and electronics.

Variations in perpendicular magnetic and electrical transport properties of ferrimagnetic (0 0 1) NiCo2O4 films

We fabricated epitaxial NiCo2O4 films on (001) MgAl2O4 substrates by varying the pulsed-laser energy density from 1.31 to 2.46 J/cm2, while keeping all other parameters fixed. X-ray diffraction measurements revealed that the increase in energy density increased the film deposition rate from 0.022 to 0.078 nm/s, while resulting in the decrease of the full-width at half-maximum of the rocking curve and out-of-plane lattice constant. At room temperature, the films grown at an intermediate energy density range of 1.97–2.13 J/cm2 exhibited more distinctive perpendicular magnetic anisotropy and magnetic domain structure compared to those grown at high or low energy densities. On the other hand, the lower the laser energy density, the more pronounced the perpendicular magnetic anisotropy becomes at low temperatures. In addition, the ferrimagnetic-to-paramagnetic transition temperature of the film increased with the energy density, reaching a maximum of approximately 390 K at energy densities above 2.13 J/cm2. Furthermore, temperature-dependent resistivity indicated that the metallic behavior in the films grown above 2.13 J/cm2 was retained up to ∼ 500 K, which is much higher than the ferrimagnetic transition temperature. These results suggest that pulsed-laser energy density can serve as an alternative parameter for controlling the perpendicular magnetic properties and enhancing the metallic behavior of the (001) NiCo2O4 film.