Effect of ultrasonic bonding and lamination on electrical performance of copper indium gallium (de)Selenide CIGS thin film photovoltaic solar panel

Abstract

This paper aims to study the effect of ultrasonic aluminum (Al) bonding and lamination processes on the electrical performance of copper indium gallium (di)selenide (CIGS) thin film photovoltaic (TFPV) solar panels. Ultrasonic Al bonding on the MoSe2 layer of the CIGS TFPV solar panel was performed in three configurations: eight bonds, 16 bonds, and parallel configurations. The lamination process was performed on the Al bonds with MoSe2 layers of the CIGS TFPV solar panel. Ultrasonic bonding and lamination processes significantly affect the electrical performance of CIGS TFPV solar panels. Open circuit voltage, Voc is the least affected electrical characteristic with the application of ultrasonic bonding and lamination processes as compared to short circuit current (Isc), current density (Jsc), maximum power (Pmpp), fill factor (FF), and efficiency. 8-bonds configuration has the highest efficiency, ranging from 11.45% to 13.86% throughout unique connections of I-V measurement, compared to 16-bonds ranging from 7.99% to 10.77%, and parallel configurations, ranging from 9.14% to 11.92%. The notable variations in electrical properties with the processes used to create laminated CIGS TPFV solar panels with ultrasonic Al bonding can be explained by physical examination and lock-in infrared (IR) thermography. The ultrasonic Al bond is best suited to be used as the interconnection mean in the CIGS TFPV solar panel compared to that of conductive adhesive that has been widely applied nowadays.