Abstract
Plasma enhanced chemical vapor deposition (PECVD) method has been utilized to fabricate phosphorous-doped hydrogenated nanocrystalline silicon carbide (P-doped nc-SiCx:H) thin films on polyethylene terephthalate (PET) substrate. With the aim at obtaining highly conductive thin films, H2/Ar mixed dilution has been applied for creating plasma during deposition, and the variation of structural, electrical and optical properties with H2/Ar flow ratio RH have been systemically investigated through a series of characterizations. Results show that the highly crystallized P-doped nc-SiCx:H thin film can be prepared while the properties are controllable through adjusting RH. In the case of RH = 0.75, the maximum dark conductivity (6.42 S cm−1) and a wide optical bandgap (1.93 eV) are attained. Finally, detail discussion has been made to illustrate the growth mechanism of the flexible P-doped nc-SiCx:H thin films.
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