Variation Of Electrical Characteristics Research Articles

The effects of tangerine peel (Citri reticulatae pericarpium) essential oils as glazing layer on freshness preservation of bream (Megalobrama amblycephala) during superchilling storage

This work was aim to the application of tangerine peel essential oils (TPEOs) as glazing layer on fish preservation. In this paper, essential oils were respectively extracted from the peel of ponkan, bitter orange and sweet orange. Their compositions were analyzed using GC–MS method. Fresh sample of bream was immersed into different TPEO for the formation of glazing layers on the surface and stored at −1 ±0.2 °C for 25-days storage. A thorough study of freshness evaluation was carried out and statistics analysis was performed to analyze the effect of TPEO. The result showed that the glazing layers of TPEO can effectively slow down the degradation process of fish samples and the resulting variations in electrical, moisture, chemical, microbial, sensory and textural characteristics. Additionally, statistical analysis showed that there are significant (most of p is less than 0.05) difference between control and treated sample, but insignificant (most of p is more than 0.05) differences among the samples with glazing layer of different TPEOs.The work indicated TPEOs had remarkable effect in the storage of aquatic products.

Bulk FinFETs with body spacers for improving fin height variation

A novel FinFET structure with body spacers in sub fin (BSSF) is proposed to improve the fin height variation produced in the manufacturing processes. Device simulation results are presented to show the electrical variations improvement. The effective fin height (Heff) of FinFETs with BSSF is well controlled because it only depends on the silicon epi layer thickness (TSi). Taking advantage of the precisely controlled epitaxy process, Heff uniformity of FinFETs with BSSF is much better than conventional bulk FinFETs. Benefit from the smaller Heff variation, FinFETs with BSSF show much smaller electrical characteristics variation. For n-FinFETs, the Ion variation improves from 33.46% for conventional bulk FinFETs to 8.05% for FinFETs with BSSF. Additionally, manufacturing of FinFETs with BSSF is compatible with that of the state-of-the-art bulk FinFETs, promising for its applications in massive production.

Development of Electric Current Sensor for the Device Protecting Electrical Wiring against Sparks

The paper is devoted to the development of electrical current sensor, comparable with one pole of protective-switching apparatus of electric network for the voltage up to 1 kV. It is defined, that variation of mass, dimensions and electrical characteristics of the sensor generates a nominal row of currents of the device, protecting from sparks.

Statistical investigation of the length-dependent deviations in the electrical characteristics of molecular electronic junctions fabricated using the direct metal transfer method

We fabricated and analyzed the electrical transport characteristics of vertical type alkanethiolate molecular junctions using the high-yield fabrication method that we previously reported. The electrical characteristics of the molecular electronic junctions were statistically collected and investigated in terms of current density and transport parameters based on the Simmons tunneling model, and we determined representative current–voltage characteristics of the molecular junctions. In particular, we examined the statistical variations in the length-dependent electrical characteristics, especially the Gaussian standard deviation σ of the current density histogram. From the results, we found that the magnitude of the σ value can be dependent on the individual molecular length due to specific microscopic structures in the molecular junctions. The probable origin of the molecular length-dependent deviation of the electrical characteristics is discussed.

Mapping the process dependent conductivity of carbon nanotube thin-films using a non-invasive contact probing system.

We report on a non-invasive contact probing (NICP) system for measuring the distribution of local surface conductivity of macroscopic thin-films of carbon nanotubes. Using the NICP system, we were able to obtain the local sheet resistance of the conducting thin-films continuously at ∼10 μm resolution over few centimeters which would not have been possible using conventional contact probing methods. Measurements performed on carbon nanotube thin-films with various nanotube densities, physical, and chemical treatments revealed that the local variation in electrical characteristics was not reflected in global conductance measurements. This demonstrated the usefulness of the NICP system for evaluating the effect of processing on the electrical uniformity of conducting thin-films made using nanomaterials.

Mechanical and electrical characteristics of traveling wave ultrasonic motors during the whole life of friction material

It is difficult to evaluate the characteristics of traveling wave ultrasonic motors (TWUSMs) during the whole life of friction material (FM) because the wear of FM is quite slow. To solve this problem, an accelerated life test method was proposed and the mechanical and electrical characteristics of TWUSMs in the whole life of FM were analyzed systematically. The results show that the mechanical characteristics including speed and efficiency have a decline trend after an ascent with the increase of FM thickness, especially when the load torque is great. When the load torque is greater than 0.4 Nm, the optimum range of FM thickness is 0.10–0.20 mm. When the residual FM thickness is less than 0.17 mm, holding torque is greater than stall torque. Electrical characteristics of TWUSM show monotonicity in the whole life of FM. Therefore, the variations of electrical characteristics could be the wear indicator of FM. Based on experiment analysis, mechanism of interactions and couplings in the energy transfer process of the TWUSM system was explored. The energy transfer process of TWUSM was divided into four subprocesses. The wear of FM is in the intermediate subprocess, which has influence on both output performance and drive circuit of TWUSM. The four subprocesses interact and couple with each other closely. Consequently, the mechanical part and electrical part of TWUSM should be not isolated, and not only the forward action, but also the backward action in energy transfer process should be considered for a more realistic theoretical model of TWUSM.

Impacts of the Shell Doping Profile on the Electrical Characteristics of Junctionless FETs

This paper presents the impacts of an advanced shell doping profile (SDP) on the electrical characteristics of a junctionless (JL) FET in terms of OFF-current, subthreshold swing (SS), and ON-current by a numerical simulator. Due to the potential mirroring effect, a special observation stemming from the SDP, the carriers can enter the intrinsic region from the doped surface reducing the series resistance though the junction depth is smaller than 5 nm. The proposed doping profile provides an additional structure parameter for designing a JL FET showing the mitigated short-channel effects, a better SS, and a higher ON/OFF current ratio for sub-20-nm channel length. Compared with traditional devices, a JL FET with the proposed SDP shows a lower OFF-current by decades and less electrical characteristics variation caused by the nanowire diameter variation. The SDP not only reduces the series resistance of a JL FET but also poses a possible solution of avoiding the negative impacts of quantum confinement for advanced technology nodes.

Temperature-dependent charge injection and transport in pentacene thin-film transistors

The electrical characteristics of p-channel pentacene thin-film transistors (TFTs) were analyzed at different operating temperatures ranging from 253 to 353 K. An improvement in the drain current and field-effect mobility of the pentacene TFTs is observed with increasing temperature. From the Arrhenius plots of field-effect mobility extracted at various temperatures, a lower activation energy of 99.34 meV was obtained when the device is operating in the saturation region. Such observation is ascribed to the thermally activated hole transport through the pentacene grain boundaries. On the other hand, it was found that the Au/pentacene contact significantly affects the TFTs electrical characteristics in the linear region, which resulted in a higher activation energy. The activation energy based on the linear field-effect mobility, which increased from 344.61 to 444.70 meV with decreasing temperature, implies the charge-injection-limited electrical behavior of pentacene TFTs at low temperatures. The thermally induced electrical characteristic variations in pentacene TFTs can thus be studied through the temperature dependence of the charge injection and transport processes.

PV 모듈 내 바이패스 다이오드 손상에 의한 열적 전기적 특성 변화 분석

PV 모듈 내 바이패스 다이오드 손상에 의한 열적 전기적 특성 변화 분석

Variation in individual patient electrical characteristics during Multi-Point Pacing (MPP) with Basal - Apical (BA) compared with Basal - Basal (BB) lead positioning

Variation in individual patient electrical characteristics during Multi-Point Pacing (MPP) with Basal - Apical (BA) compared with Basal - Basal (BB) lead positioning

Novel Gated-Multiprobe Method for Measuring a Back Electrode Effect in Amorphous Oxide-Based Thin-Film Transistors

In this paper, we investigated the variations in electrical characteristics of amorphous indium-gallium-zinc-oxide thin-film transistors using a gated-multiprobe method when additional probe electrodes are on the back-channel region. We found that the resistance of the probe region is much smaller than that of the nonprobe region, which can be modeled by a series connection of transistors and resistors indicating that the probe region is independent of V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> and induces a decrease in effective channel length. We also performed technology computer aided design (TCAD) simulations and found that the effective channel length decreases and drain current increases, which is consistent with the experiments.

FIB-induced electro-optical alterations in a DFB InP laser diode

A recent experiment used FIB to induce local modification in a single-mode edge emitting laser operating at 1310nm, and led to a method for estimating gain parameters. In this experiment, the final FIB modification introduced large variation in electrical characteristics that were not analysed in detail, and even seemed to contradict the basic laser model that the experiment itself aimed to confirm. This paper focuses on this puzzling point, and solves it with a circuital hypothesis, a circuit simulation and a direct inspection by XEBIC.

New Voltage-Programmed AMOLED Pixel Circuit to Compensate for Nonuniform Electrical Characteristics of LTPS TFTs and Voltage Drop in Power Line

This paper presents a simple pixel structure that uses the voltage-programmed method to compensate for the electrical characteristic variations in low-temperature polycrystalline-silicon thin-film transistors and the current-resistance ( \(I\) – \(R\) ) voltage drop in the power line for active-matrix organic light-emitting diode displays. Based on the experimental results, the functionality of the pixel circuit can be operated correctly during each operation phase. Moreover, the pixel current exhibits high uniformity against the threshold voltage and mobility variations in the driving TFT.

Temperature dependant electrical properties of formyl-TIPPCu(II)/p-Si heterojunction diode

This paper reports the temperature dependent electrical characterization of formyl- TIPPCu (II)/p- Si heterojunction diode which was fabricated by growing thin films of formyl- TIPPCu (II) on the p-type silicon substrate by thermal sublimation technique. The variation in electrical characteristics of the fabricated devices has been systematically investigated as the function of temperature by using current–voltage (I–V) measurements in the temperature range 299–339 K. The diode parameters like ideality factor, zero bias barrier height and parasitic series resistance have been found to be strongly temperature dependant. The zero bias barrier height increases while ideality factor and series resistance decreases with increasing temperature.

Effect of Trench Depth Variation on Phase Change Memory Operation using Tcad

As one of non-volatile memory devices, the flash memory is widely used in various areas of applications, especially for mobile application. However, it has problems such as physical nano-scale limitation and reliability. Thus, researchers investigated next-generation memory device candidates which can overcome these problems. The phase change memory (PCM) is one of the attractive next-generation non-volatile memory candidates. As a phase change memory device, both keyhole and μ-trench structures are widely used. Thus, it is crucial to examine the electrical characteristic variation by structure modification. So, in this paper, we analyze the electrical effect of upper side trench depth variation on phase change memory operation.

Stress assessment for device performance in three-dimensional IC: linked package-scale/die-scale/feature-scale simulation flow

Potential challenges with managing mechanical stress and the consequent effects on device performance for advanced three-dimensional (3-D) IC technologies are outlined. The growing need in a simulation-based design verification flow capable of analyzing a design of 3-D IC stacks and detecting across-die out-of-spec variations in MOSFET electrical characteristics caused by the die thinning and stacking-induced mechanical stress is addressed. The development of a multiscale simulation methodology for managing mechanical stresses during a sequence of designs of 3-D IC dies, stacks, and packages is focused. A set of physics-based compact models for a multiscale simulation is proposed to assess the mechanical stress across the device layers in silicon chips stacked and packaged with the 2.5D interposer-based, and true 3-D through silicon via-based technology. A simulation flow is developed for the hot-spot checking in different types of devices/circuits such as digital, analog, analog matching, memory, IO, characterized by different sensitivities to the stress-induced mobility variations. A calibration technique based on fitting to measured electrical characteristics of the test-chip devices is presented. The limited characterization or measurement capabilities for 3-D IC stacks and a strict “good die” requirement make this type of analysis critical in order to achieve an acceptable level of functional and parametric yield.

Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor

In this work, the carrier microscopic transport process of biaxial strained Si p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) under γ -ray radiation has been studied. Effect of γ-ray on devices and the relationship between the variation of device electrical characteristics and the total dose are investigated. A model for considering the degradation of threshold voltage and transconductance due to the total dose radiation is established. Based on this model, numerical simulation has been carried out. Results show that the threshold voltage of PMOSFET decreases with increasing radiation dose. At a lower total dose, the threshold voltage decreases linearly. However, at a higher total dose, it becomes saturated. The degradation can be explained by the generation of trapped charges which increase the impact possibility of carriers in the channel and induce the reduction of mobility and transconductance accordingly. Finally, the simulation results are compared with the experimental data. A good agreement is observed, indicating the validation of our proposed model.

Development of On-Line Monitoring System and Aging Characteristics Research of Switchgear

For improving reliable operation of switchgear in power system, an approach for on-line monitoring the insulation characteristic and bus-bar temperature rising of the switchgear is proposed in this paper. Through comparing several existing temperature measurement methods for monitoring temperature rising elevation at bus-bas, a new design of temperature monitoring method is proposed. It adopts quick-magnetic saturated current transformer, temperature sensor and infrared transmission to solve the problem of high voltage isolation. The epoxy resin insulation material which is commonly used in switchgear its aging mechanism data is not complete, seriously restrict on-line monitoring for switchgear, so thousands hours of aging experiment is done on switchgear, systematic study various electrical characteristics variation law on the gradual aging process of epoxy resin insulation materials. Therefore, study on the aging characteristics of switchgearinsulation and its lifetime estimation method is the key technology to understand agingmechanism better, search for new fault diagnostic method and the way to extend theuseful lifetime of switchgear. At last, the system runs in real system and the result shows the on-line monitoring system is stable and reliable which can be provide reference for on-line monitoring system design of switchgear.

The Synthesis of the Fe3O4 Nanoparticles and the Analysis of the Current–Voltage Measurements on Au/Fe3O4/p-Si Schottky Contacts in a Wide Temperature Range

The iron oxide (Fe3O4) magnetic nanoparticles were synthesized via the organic solution phase method and used for the fabrication of the Au/Fe3O4/p-Si rectifying device. The variation in electrical characteristics of the Au/Fe3O4/p-Si Schottky contacts was investigated as a function of temperature using current–voltage (I–V) measurements in the temperature range of 40 K to 370 K (−233 °C to 97 °C). The I–V characteristics of the contacts indicated extremely strong temperature dependence. The double distribution of barrier heights was found in the Fe3O4/p-Si Schottky diodes from the I–V-T measurements. The Schottky barrier height (Φb) increases with the increasing temperature, while the ideality factor n decreases. The nonlinearity in the activation energy plot was observed, which is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the Fe3O4/p-Si interface. The Richardson constant measured from the temperature-dependent I–V characteristics is 2.99 A/K2 cm2, which is lower than the ideal value.

Investigation of electrical properties of organic memristors based on thin polyaniline-graphene films

The possibility of integration of graphene films applying the Langmuir-Schaefer method to the structure of the working channel of the organic memristor is investigated. The variation in electrical characteristics of memristor structures in the presence of graphenes in the working channel of the element is analyzed. New effects such as an increased working voltage range and the S-like shape of current-voltage characteristics are found, which is most probably associated with the charge accumulation in the region of graphene sheets.