Values Of Mean Barrier Height Research Articles

Electronic Properties of FLG/InP Schottky Contacts

Graphene (Gr) is of great interest in the development of new electronic, photonic, and composite materials. The physical properties of Gr can vary depending on the number of layers, and this unique property makes it a potential material for different electronic applications. In this study, few-layer graphene (FLG) film was spin-coated onto the InP semiconductor surface and the FLG/n-InP Schottky contact was produced. The properties and quality of the FLG nano-film were determined by using Raman spectroscopy. Parameters such as ideality factor, barrier height, and series resistance of Schottky contacts were calculated using current-voltage (I-V) curves. With the Gaussian distribution, the mean ideality factor of the Gr/InP contacts was found to be =1,47, and the mean barrier height values were found to be =0.68 eV. The standard deviation values were calculated as σ=0.32 for the ideality factor and σ=0.06 eV for the barrier height. In addition, the series resistance values were calculated from the Cheung functions and were found to be in agreement with the literature. Finally, the current conduction mechanisms of the Gr/n-InP structure were revealed by examining the logarithmic I-V characteristics.

The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes

Schottky diodes still attract researchers as they are used in various device applications. This study provides I–V characteristics of Ti/n-GaAs (80–300 K). Higher barrier height (ΦB0) values were obtained for higher temperatures, whereas the ideality factor exhibited the opposite behavior. This was associated with a barrier inhomogeneity at the Ti/GaAs interface, which has a Gaussian distribution (GD). The mean barrier height values calculated from the modified Richardson and ΦB0 - q/2 kT plots were found to be 0.584 eV and 0.575 eV in the temperature range of 80–160 K. They were found as 1.041 eV and 1.033 eV between 180 K and 300 K, respectively. The modified Richardson constant value, on the other hand, was calculated as 22.06 A cm−2 K−2 (80–160 K) and 13.167 A cm−2 K−2 (180–300 K). These values are higher than the theoretical value for n-GaAs, which is 8.16 A cm−2 K−2. This difference may stem from intense inhomogeneity at the Ti/n-GaAs interface.

Temperature dependence of electrical characteristics and interface state densities of Au/n-type Si structures with SnS doped PVC interface

In this study, the electrical properties of Au/(SnS doped PVC)/n–Si structures were investigated in detail using current/voltage (IV) data in wide temperature range (80–340 K by 20 K steps). Some of the basic electrical parameters such as ideality factor (n), saturation current (I 0), and barrier height (Φ bo ) were obtained. When these parameters were extracted using thermionic emission (TE) theory, it was found that the value of n decreases whereas Φ bo increases with increasing temperature. This result can be explained by the barrier height (BH) inhomogeneity. The observed two linear regions in the plots of Φ bo –n, Φ bo –(1/2kT)1 and (n −1–1)–(1/2kT) in temperature regions of 80–160 K and 80–340 K form an evidence to the presence of Double Gaussian distribution (DGD). Using the plot of Φ bo –(1/2kT), the values of mean BH () and standard deviation (σ S) were found as 0.486 eV and 66 mV for first region, and 0.984 eV and 139 mV for second region, respectively. Thus, the effective Richardson constant (A*) was obtained using the interception point of the modified Richardson plot for these regions as 7.013 × 10−6 A.K−2cm−2 and 88.12 A.K−2cm−2, respectively. It is clear that A* value for second region is closer to theoretical value (=112 A.K−2cm−2 for n–Si). Finally, the energy dependent profile of the surface-states (Nss) was extracted using Card-Rhoderick method and Nss was found to range from ∼1012 (at 80 K) to 1013 eV−1 cm−2 (at 340 K).

Analysis of temperature dependent electrical characteristics of Au/GaSe Schottky barrier diode improved by Ce-doping

In this paper, structural and electrical properties of p-type undoped and Ce-doped (0.1 at%) GaSe single crystals grown by using modified Bridgman method were investigated. The XRD analysis showed that both undoped and Ce-doped GaSe single crystals had hexagonal structure with preferred orientation along (004). The Schottky diodes were realized by Au contacts on GaSe wafers. The electrical characteristics of the Ce-doped GaSe device based on the current-voltage were found to be better compared to the undoped GaSe device. The electrical measurements were carried out in the temperature interval of 100-360 K. The temperature dependent ideality factor n, the barrier height Φb, the saturation current I0, the series resistance Rs and the interface states density Nss, were determined by using the thermionic emission (TE) theory. Based on this theory, it was observed that the ideality factor and series resistance decreased while the barrier height and the saturation current increased with increasing temperature. From the plot of Φb vs. 1000/T, temperature dependent I–V characteristics of Au/GaSe:Ce Schottky diode revealed the existence of a double Gaussian distribution with mean barrier height values of 1.35 and 0.83 eV and standard deviation (σ0) of 161 and 96 meV, respectively. The Norde method was used to determine the series resistance and it was observed that the series resistance decreased with increasing temperature.

Temperature dependent current–voltage characteristics of Ag/Zn2GeO4/Si diode grown by thermal evaporation method

In this manuscript, we have investigated the transport properties of Ag/Zn2GeO4/Si Schottky diode using temperature dependent current–voltage (I-V) characteristics. The ZnO sample was grown on Si substrate was fabricated by home developed thermal coating unit. The silver (Ag) metal contact of diameters 0.78 mm2 was fabricated on grown Zn2GeO4 and was studied comprehensively using pico meter over temperature range of 120 K–425 K. The I-V data demonstrated that ideality factor decreased from 6.2 to 2.0 and barrier height increased from 0.3 to 0.8 eV as the measurement temperature increased from 120 to 425 K respectively. The data demonstrated the presence of inhomogeneity at the interface of Ag metal and Zn2GeO4 semiconductor. To explain the barrier height inhomogeneity, we have further process the data by plotting different graphs between ideality factor versus barrier height and 1/2kT versus barrier height. The graph between ideality factor and barrier height gives a homogenous barrier height of 0.6 eV. Barrier height versus 1/2kT plot was drawn to obtain the values of mean barrier height for 0.75 eV and standard deviation (δs) 0.016 V at zero bias respectively.

On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60–400 K

This study presents electrical characteristics of n-GaAs based Schottky barrier diodes (SBDs) with Rhenium (Re) rectifier contacts. The electrical characteristics of the Re/n-GaAs SBDs were investigated utilizing the forward bias current–voltage (IF–VF) data collected in temperature range of 60–400 K. The values of ideality factor (n) and zero-bias barrier height (ΦBo) were found as 9.10 and 0.11 eV for 60 K, and 1.384 and 0.624 eV for 400 K, respectively, on the basis of thermionic-emission theory. The conventional Richardson plot deviated from linearity at low temperatures and the Richardson constant value (A*) was obtained quite lower than the theoretical value for this semiconductor (8.16 A cm−2 K−2). nkT/q–kT/q plot shows that the field-emission may be dominant mechanism at low temperatures as a result of tunneling via surface states since the studied n-GaAs’s doping concentration is on the order of 1018 cm−3, i.e. at high values so leads to tunneling. On the other hand, ΦBo–n, ΦBo–q/2kT and (n−1 − 1)–q/2kT plots exhibit linearity but this linearity is observed for two temperature regions (60–160 K and 180–400 K) due the presence of double Gaussian distribution (GD) of the barrier height. Therefore, the standard deviation value was obtained from the plot of ΦBo–q/2kT and it was used for modifying the conventional Richardson plot into the modified Richardson plot by which the values of mean barrier height and A* were obtained as 0.386 eV and 15.55 A cm−2 K−2 and 0.878 eV and 8.35 A cm−2 K−2 for the low and high temperature regions, respectively. As a result, IF–VF–T characteristics of the Re/n-GaAs SBDs were successfully elucidated by double-GD of barrier height.

Analysis of temperature dependent electrical performance of Al/CuO/ITO Schottky barrier diode and explanation of inhomogeneous barrier heights by double Gaussian distribution

Here temperature dependent electrical properties of two differently synthesized CuO nanoparticles (hydrothermal (CuO (H)) and reflux (CuO (R))) based Schottky barrier diodes (SBDs) have been investigated. Both the materials based devices show an abnormal decrease in the ideality factor (η) and an increase in the barrier height (BH) with the increase in temperature. Experimentally obtained Richardson constant (A*) for both materials based devices show much lower values than the theoretical values. This discrepancy in A* due to the presence of inhomogeneities at the barrier height (BH) of metal-semiconductor (MS) interface has been analyzed by assuming double Gaussian distribution (GD) of the BHs.The mean BH values (ϕb0¯) for CuO (H) based devices obtained as 1.18eV and 1.07eV with standard deviation 0.18V and 0.15 V respectively which are less than the values of its counterpart. The obtained values of A* from the modified plot for both SBDs are in close agreement with the theoretical values. This study portrays a successful explanation of temperature dependent current-voltage characteristics of these two SBDs assuming double GD of the BHs.

Temperature dependent properties of Al/rGO-ZnCdS Schottky diode and analysis of barrier inhomogeneities by double Gaussian distribution

Here we report the temperature dependent performance of Al/rGO-ZnCdS Schottky barrier diode(SBD) in the range of 303K–453K. Ideality factor(n) and Series resistance(Rs) of the SBD decreased, while barrier height (BH)(ϕb0) increased with increasing temperature. Richardson constant (A∗) was obtained as 2×10−8A/cm2K2 and 1.4×10−7A/cm2K2 in the temperature range 303–363K and 378–423K respectively, which are much lower than the theoretical value of 32A/cm2K2. The strong temperature dependence of BH and the large discrepancy in A∗ has been precisely explained by assuming a Gaussian distribution (GD) of the BHs due to BH inhomogeneities at the metal-semiconductor interface. The results reveal the existence of a double GD with mean BH values (ϕb0‾) of 1.47eV and 1.26eV and standard deviations(σs) of 0.22V and 0.18V. The modified activation energy plot of ln(I0/T2)-(q2σ2/2k2T2) yields ϕb0‾ and A∗ values as 1.49 and 1.26eV, and 59.18A/cm2K2 and 32.29A/cm2K2, respectively. Particularly the A∗ value of 32.29A/cm2K2 is extremely close to the theoretical value. The analysis confirmed that temperature dependent I-V characteristics of our SBD can be successfully explained with a double GD of the BHs.

Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity

This study aims to investigate electrical characteristics of identically prepared metal-ferroelectric-semiconductor (MFS) structures. Therefore a total number of 58 diodes were fabricated in the form of Al/Bi4Ti3O12/p-Si structure and then current-voltage (I–V) and admittance-voltage (C–V and G/ω-V) measurements were performed at room temperature. It was found that zero bias barrier height (ΦBo) and ideality factor (n) show diode-to-diode variance. The value of n varied from 2.7 to 5.3 and such high values were attributed to the barrier height (BH) inhomogeneity, interfacial layer and surface states (Nss). Similar behavior was observed for series resistance (Rs) values which were obtained by using Nicollian-Brews method. Other electrical parameters such as doping concentration of acceptor atoms (NA), Fermi energy (EF), and BH (ΦB) were extracted from reverse bias C−2–V characteristics. The experimental values of BH obtained from the forward bias I–V and reverse bias C−2–V characteristics varied from 0.69 to 0.84 eV and 0.75–0.93 eV and statistical analysis revealed mean BH values as 0.716 eV and 0.818 eV, respectively. We believe the variations in the electrical parameters are due to inhomogeneous interfacial layer and BH, non-uniformity of the interfacial traps or dislocations, and grain boundaries.

Thermal sensors based on delafossite film/p-silicon diode for low-temperature measurements

A CuFeO2 film was prepared on p-type silicon wafer to fabricate an Al/CuFeO2/p-Si/Al diode by the sol–gel method. The temperature and frequency dependence of electrical characteristics of Al/CuFeO2/p-Si/Al diode were investigated using current–voltage (I–V) and capacitance/conductance–voltage (C/G–V) measurements. It is found that the ideality factor (n) decreases while zero-bias barrier height (Φ Bo) increases with increasing temperature. The conventional Richardson plot [ln(I o/T 2) vs. 1000/T] shows a linearity above about 200 °K. From the slope and intercept of the linear region, the values of activation energy (E a) and Richardson constant (A*) were found to be 0.15 eV and 1.24 × 10−8 A cm−2 K−2, respectively. Then, the values of mean barrier height and A* were determined from the modified Richardson plot [ln(I 0/T 2)−q 2 σ 0 2 /2k 2 T 2 vs. 1000/T] and found to be 1.06 eV and 33.87 A cm−2 K−2, respectively. The calculated A* value is very close to the theoretical value of 32 A cm−2 K−2 for p-type Si. The obtained results indicate that Al/CuFeO2/p-Si/Al diode can be used as a temperature measurement sensor for low-temperature controlling applications.

Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces

We have grown InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy and studied the temperature dependent electrical transport characteristics. The barrier height (φb) and the ideally factor (η) estimated using thermionic emission model were found to be temperature dependent. The conventional Richardson plot of ln(Js/T2) versus 1/kT showed two temperature regions (region-I: 400–500 K and region-II: 200–350 K) and it provides Richardson constants (A∗) which are much lower than the theoretical value of GaN. The observed variation in the barrier height and the presence of two temperature regions were attributed to spatial barrier inhomogeneities at the heterojunction interface and was explained by assuming a double Gaussian distribution of barrier heights with mean barrier height values 1.61 and 1.21 eV with standard deviation (σs2) of 0.044 and 0.022 V, respectively. The modified Richardson plot of ln(Js/T2) − (q2σs2/2k2T2) versus 1/kT for two temperature regions gave mean barrier height values as 1.61 eV and 1.22 eV with Richardson constants (A∗) values 25.5 Acm−2K−2 and 43.9 Acm−2K−2, respectively, which are very close to the theoretical value. The observed barrier height inhomogeneities were interpreted on the basis of the existence of a double Gaussian distribution of barrier heights at the interface.

Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current–voltage (I–V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303–383 K exhibit excellent rectifying character. From these nonlinear I–V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

Investigation of temperature dependent barrier height of Au/ZnO/Si schottky diodes

In this study, temperature dependent current-voltage (I-V) measurements have been performed to investigate the inhomogeneity in the temperature dependent barrier heights of Au/ZnO/Si Schottky barrier diode in the temperature range 150 – 400K. The room temperature values for ideality factor and barrier height were found to be 2.9 and 0.60 eV respectively indicating the inhomogenity in the barrier heights of grown samples. The Richardson plot and ideality factor verses barrier height graph were also drawn to verified the discontinuity between Au and ZnO. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear Φap (n) plot to n= 1 has given a homogeneous barrier height of approximately 1.1 eV. Φap versus 1/T plot was drawn to obtain the values of mean barrier height for Au/ZnO/Si Schottky diode (1.1 eV) and standard deviation(δs) (0.02 V) at zero bais.

Electrical properties and the double Gaussian distribution of inhomogeneous barrier heights in Se/n-GaN Schottky barrier diode

The temperature dependent electrical characteristics of Se/n-GaN Schottky barrier diode have been investigated in the temperature range of 130–400K in the steps of 30K. The estimated barrier height (ϕbo) and ideality factor n are found to be 0.46eV and 3.83 at 130K, 0.92eV and 1.29 at 400K. The ϕbo and n are found to be strongly temperature dependent and while the ϕbo decreases and the n increase with decreasing temperature. Such behavior of ϕbo and n is attributed to Schottky barrier inhomogeneities, explained by the assumption of Gaussian distribution of barrier heights at the metal/semiconductor interface. Experimental results revealed the existence of a double Gaussian distribution with mean barrier height values of 1.33 and 0.90eV and standard deviations (σo) of 0.0289 and 0.010V, respectively. The modified ln(Io/T2)−(q2σo2/2k2T2) versus 103/T plot gives ϕbo and Richardson constant (A∗) values as 1.30 and 0.88eV, 23.6 and 19.2 A/cm2 K2 at 400 and 130K, respectively without using the temperature coefficient of the barrier height. Further, the barrier height obtained from C–V method decreases with an increase in temperature. It is also noted that the barrier height value estimated from the C–V method is higher than that estimated from the I–V method at various temperatures. Possible explanations for this discrepancy are presented. The interface state density (Nss) is found to be decreased with an increasing temperature. The reverse-bias leakage current mechanism of Se/n-GaN Schottky diode is investigated. Both Poole–Frenkel and Schottky emissions are described and discussed.

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

ABSTRACTIn this work, we have investigated the electrical properties of Au/n‐InP contacts with a thin layer of polyvinyl alcohol (PVA) as an interlayer. The current–voltage (I–V) and capacitance–voltage (C–V) measurements are carried out in the temperature range of 175–425 K. The Au/PVA/n‐InP Schottky structure show nonideal behaviors and indicates the presence of a nonuniform distribution of interface states. The temperature dependent interface states densities (NSS), ideality factor and barrier height are obtained. An abnormal decrease in zero‐bias barrier height (BH) and increase in the ideality factor ( ) with decreasing temperature have been explained on the basis of the thermionic emission theory with Gaussian distribution (GD) of the BHs due to the BH inhomogeneities. The experimental I–V characteristics of Au/PVA/n‐InP Schottky diode has revealed the existence of a double GD with mean BH values of ( ) of 1.246 and 0.899 eV and standard deviation ( ) of 0.176 and 0.137 V, respectively. Consequently, the modified conventional activation energy versus plot gives and Richardson constants ( ) and the values are 1.17 and 0.71 eV and 9.9 and 6.9 A/cm2 K2, respectively, without using the temperature coefficient of the BH. The effective Richardson constant value of 9.9 A/cm2 K2 is very close to the theoretical value of 9.4 A/cm2 K2 for n‐InP. The discrepancy between Schottky barrier heights estimated from I–V and C–V measurements is also discussed. © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014, 131, 39773.

Current–voltage–temperature characteristics of Au/p-InP Schottky barrier diode

In order to evaluate current conduction mechanism in the Au/p-InP Schottky barrier diode (SBD), some electrical parameters such as the barrier height (Φbo) and ideality factor (n) have been obtained from the forward bias current–voltage (I–V) characteristics. The I–V measurements show that n is close to unity at room temperature, indicating that the main mechanism of current flow through the SBD is thermionic emission (TE).On the other hand, the particular contact fabrication process produces a relatively high value of barrier height (0.78eV) at room temperature. The variation of Φbo with temperature has been obtained as 4×10−4eVK−1, which is close to the temperature coefficient of the band-gap of InP. It has been found that Φbo and n values of the SBD are temperature dependent below room temperature by using TE theory. Φbo increases and n decreases with increasing temperature. The assumption of a double Gaussian distribution of the Schottky barrier height has been applied due to barrier inhomogeneities that prevail at the metal–semiconductor interface giving mean barrier heights of 0.98 and 0.84eV and standard deviations of 88 and 53mV for 80–180K and 180–320K temperature regions, respectively. The values of mean barrier height and Richardson constant (A⁎) using the modified Richardson ln(I0/T2)−(q2σs2/2k2T2) plot have been found as 1.00eV, 77.52A/cm2K2 for 80–180K and 0.83eV, 56.76A/cm2K2 for 180–320K, respectively. A⁎values are in close agreement with the value of 60A/cm2K2 known for p-type InP.

Current transport in nonpolar a-plane InN/GaN heterostructures Schottky junction

The temperature dependent current transport properties of nonpolar a-plane (112¯0) InN/GaN heterostructure Schottky junction were investigated. The barrier height (ϕb) and ideally factor (η) estimated from the thermionic emission (TE) model were found to be temperature dependent in nature. The conventional Richardson plot of the ln(Is/T2) versus 1/kT has two regions: the first region (150–300 K) and the second region (350–500 K). The values of Richardson constant (A*) obtained from this plot are found to be lower than the theoretical value of n-type GaN. The variation in the barrier heights was explained by a double Gaussian distribution with mean barrier height values (ϕb¯) of 1.17 and 0.69 eV with standard deviation (σs) of 0.17 and 0.098 V, respectively. The modified Richardson plot in the temperature range 350–500 K gives the Richardson constant which is close to the theoretical value of n-type GaN. Hence, the current mechanism is explained by TE by assuming the Gaussian distribution of barrier height. At low temperature 150–300 K, the absence of temperature dependent tunneling parameters indicates the tunneling assisted current transport mechanism.

Comparative Study of Temperature Dependent Barrier Heights of Pd/ZnO Schottky Diodes Grown along Zn- and O-Faces

In this study, the effect of polar face on Schottky barrier diodes has been investigated. Two samples of ZnO were grown hydrothermally under similar growth conditions. The Palladium (Pd) metal contacts of area 0.78 mm2 were fabricated on both faces and were studied comprehensively using DLS-83 Deep Level Spectrometer over temperature range of 160K330K. The current-voltage (IV) measurements revealed that the ideality factor n and barrier height ϕB were strongly temperature dependent for both faces (Zn and O-face) of ZnO, indicating that the thermionic emission is not the dominant process, which showed the inhomogenity in the barrier heights of grown samples. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear ϕap verses n plot to n = 1 has given a homogeneous barrier height of approximately 0.88±0.01 eV and 0.76±0.01 eV for Zn and O-faces respectively. ϕap versus 1/T plot was drawn to obtain the values of mean barrier height for Zn and O-face (0.88±0.01 eV, 0.76±0.01 eV) and standard deviation (δs) (0.015±0.001 V, 0.014±0.001 V) at zero bais respectively. The value of δs for the Zn-face is larger than O-face, showing that inhomogenity in the barrier heights is more in the sample grown along Zn-face as compared to the sample grown along O-face.

The influence of series resistance and interface states on intersecting behavior of I–V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures

In this study, we have investigated the intersection behavior of the forward bias current–voltage (I–V) characteristics of the Al/TiO2/p-Si (MIS) structures in the temperature range of 100–300 K. The intersection behavior of the I–V curves appears as an abnormality when compared to the conventional behavior of ideal Schottky diodes and MIS structures. This behavior is attributed to the lack of free charge at a low temperature and in the temperature region, where there is no carrier freezing out, which is non-negligible at low temperatures, in particular. The values calculated from the temperature-dependent forward bias I–V data exhibit unusual behavior, where the zero-bias barrier height (ϕb0) and the series resistance (Rs) increase with increasing temperature. Such temperature dependence of ϕb0 and Rs is in obvious disagreement with the reported negative temperature coefficient. An apparent increase in the ideality factor (n) and a decrease in the ϕb0 at low temperatures can be attributed to the inhomogeneities of the barrier height, the thickness of the insulator layer and non-uniformity of the interfacial charges. The temperature dependence of the experimental I–V data of the Al/TiO2/p-Si (MIS) structures has revealed the existence of a double Gaussian distribution with mean barrier height values () of 1.108 eV and 0.649 eV, and standard deviations (σs) of 0.137 V and 0.077 V, respectively. Furthermore, the temperature dependence of the energy distribution of interface state density (Nss) profiles has been determined from forward bias I–V measurements by taking into account the bias dependence of the effective barrier height (ϕe) and n. The fact that the values of Nss increase with increasing temperature has been attributed to the molecular restructuring and reordering at the metal/semiconductor interface under the effect of temperature.

Experimental determination of the laterally homogeneous barrier height of Au/ n-Si Schottky barrier diodes

We have computed the homogeneous barrier height (BH) of Au/ n-Si Schottky diodes (SDs). Thereby, Au/ n-Si/Au–Sb SDs (24 dots) have identically been prepared, and the effective BHs and ideality factors of these diodes have been calculated from their experimental forward bias current–voltage ( I– V) and reverse bias capacitance–voltage ( C– V) characteristics. The BH for the Au/ n-Si/Au–Sb diodes from the I– V characteristics varied from 0.789 to 0.819 eV, the ideality factor n varied from 1.051 to 1.179, and the BH from C −2– V characteristics varied from 0.801 to 0.851 eV. The Gaussian fits of he experimental Schottky BH distributions obtained from the C −2– V and I– V characteristics have yielded a mean BH values of 0.808 and 0.809 eV, respectively, that are in close agreement with value of about 0.805 eV predicted by metal-induced gap states (MIGS) and chemical electronegativity concepts for Au/ n-Si SDs. Furthermore, the lateral homogeneous BH value of approximately 0.834 eV were also computed from the extrapolation of the linear plot of experimental BHs versus ideality factors.