Abstract
In this manuscript, we have investigated the transport properties of Ag/Zn2GeO4/Si Schottky diode using temperature dependent current–voltage (I-V) characteristics. The ZnO sample was grown on Si substrate was fabricated by home developed thermal coating unit. The silver (Ag) metal contact of diameters 0.78 mm2 was fabricated on grown Zn2GeO4 and was studied comprehensively using pico meter over temperature range of 120 K–425 K. The I-V data demonstrated that ideality factor decreased from 6.2 to 2.0 and barrier height increased from 0.3 to 0.8 eV as the measurement temperature increased from 120 to 425 K respectively. The data demonstrated the presence of inhomogeneity at the interface of Ag metal and Zn2GeO4 semiconductor. To explain the barrier height inhomogeneity, we have further process the data by plotting different graphs between ideality factor versus barrier height and 1/2kT versus barrier height. The graph between ideality factor and barrier height gives a homogenous barrier height of 0.6 eV. Barrier height versus 1/2kT plot was drawn to obtain the values of mean barrier height for 0.75 eV and standard deviation (δs) 0.016 V at zero bias respectively.
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