Abstract
In this study, temperature dependent current-voltage (I-V) measurements have been performed to investigate the inhomogeneity in the temperature dependent barrier heights of Au/ZnO/Si Schottky barrier diode in the temperature range 150 – 400K. The room temperature values for ideality factor and barrier height were found to be 2.9 and 0.60 eV respectively indicating the inhomogenity in the barrier heights of grown samples. The Richardson plot and ideality factor verses barrier height graph were also drawn to verified the discontinuity between Au and ZnO. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear Φap (n) plot to n= 1 has given a homogeneous barrier height of approximately 1.1 eV. Φap versus 1/T plot was drawn to obtain the values of mean barrier height for Au/ZnO/Si Schottky diode (1.1 eV) and standard deviation(δs) (0.02 V) at zero bais.
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