Abstract
In this manuscript, we have investigated the transport properties of Ag/Zn2GeO4/Si Schottky diode using temperature dependent current–voltage (I-V) characteristics. The ZnO sample was grown on Si substrate was fabricated by home developed thermal coating unit. The silver (Ag) metal contact of diameters 0.78 mm2 was fabricated on grown Zn2GeO4 and was studied comprehensively using pico meter over temperature range of 120 K–425 K. The I-V data demonstrated that ideality factor decreased from 6.2 to 2.0 and barrier height increased from 0.3 to 0.8 eV as the measurement temperature increased from 120 to 425 K respectively. The data demonstrated the presence of inhomogeneity at the interface of Ag metal and Zn2GeO4 semiconductor. To explain the barrier height inhomogeneity, we have further process the data by plotting different graphs between ideality factor versus barrier height and 1/2kT versus barrier height. The graph between ideality factor and barrier height gives a homogenous barrier height of 0.6 eV. Barrier height versus 1/2kT plot was drawn to obtain the values of mean barrier height for 0.75 eV and standard deviation (δs) 0.016 V at zero bias respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
