Values Of Gate Voltage Research Articles

Bridging the Reality Gap in Quantum Devices with Physics-Aware Machine Learning

The discrepancies between reality and simulation impede the optimization and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We bridge this gap using physics-aware machine learning, in particular, using an approach combining a physical model, deep learning, Gaussian random field, and Bayesian inference. This approach enables us to infer the disorder potential of a nanoscale electronic device from electron-transport data. This inference is validated by verifying the algorithm’s predictions about the gate-voltage values required for a laterally defined quantum-dot device in AlGaAs/GaAs to produce current features corresponding to a double-quantum-dot regime. Published by the American Physical Society 2024

Controlling spin polarization of gapless states in defected trilayer graphene with a gate voltage

Trilayer graphene exhibits valley-protected gapless states when the stacking order changes from ABC to CBA and a gate voltage is applied to outer layers. Some of these states survive strong distortions of the trilayer. For example, they persist when the outer layers are partially devoid yielding a system of two trilayers of different stacking order connected by a strip of a single graphene layer. Here we investigate how these states respond to another perturbation, i.e., the presence of magnetic defects, which we model as π-vacancies. We show that the gap states hybridize with the defect states and strongly spin-split. More importantly, it is demonstrated that by changing the gate voltage value one can change the spin density of the gap states and the corresponding currents at the Fermi level.

Nonlinearity in surface plasmon polaritons at interface between triple quantum dot and nanocomposite medium

This paper focuses on investigating the generation and manipulation of surface plasmon polaritons (SPPs) at the interfaces between quantum dot (QD) molecules and nanocomposite media. We utilize three different gate voltage values and incident laser field strengths to control the propagation of SPPs. We find a significant improvement in the SPPs' propagation length at the interfaces between the QD molecules and nanocomposite media. Additionally, under the Kerr effect, the gate voltage variation provides opportunities to control the SPPs' propagation. Through modifying the intensity and frequency of the incident probe field, we can manipulate various properties of SPPs at the suggested model's interfaces. Our results indicate a large enhancement in the SPPs' propagation length at the interfaces. Notably, we estimate the skin depth and wavelength of SPPs for three distinct values of the incident probe field and gate voltage applied in the QD molecules.

A simulated fabrication and characterization of a 65 nm floating-gate MOS transistor☆

The aim of this study was to virtual fabricate and characterize a Floating-gate MOS transistor of the 65 nm process. The fabrication process was designed and characterized using the TCAD Silvaco tools. In our work, a detailed flow and the parameters are proposed to virtual fabricate the complete Floating-gate MOS transistor, which has extraordinary performances. The MOS has a large timing window of 4 V, a high gate capacitance ratio parameter of 0.645, and a high Write/Erase speed of 50 ms/70 ms. Interestingly, the results are obtained with a thin thickness of 9 nm of a tunnel oxide layer which is smaller than such layer in other works and low supply voltages in which the control gate, drain, and source voltage values are ± 6 V, 1 V, and 1 V, respectively. In addition, our paper presents the effect of the control gate voltage on the performance of the device when it increases from 6 V to 18 V.

Quantum interference probed by the thermovoltage in Sb-doped Bi2Se3 nanowires

The magnetic-flux-dependent dispersions of sub-bands in topologically protected surface states of a topological insulator nanowire manifest as Aharonov-Bohm oscillations (ABOs) observed in conductance measurements, reflecting the Berry's phase of π because of the spin-helical surface states. Here, we used thermoelectric measurements to probe a variation in the density of states at the Fermi level of the surface state of a topological insulator nanowire (Sb-doped Bi2Se3) under external magnetic fields and an applied gate voltage. The ABOs observed in the magnetothermovoltage showed 180° out-of-phase oscillations depending on the gate voltage values, which can be used to tune the Fermi wave number and the density of states at the Fermi level. The temperature dependence of the ABO amplitudes showed that the phase coherence was kept to T= 15K. We suggest that thermoelectric measurements could be applied for investigating the electronic structure at the Fermi level in various quantum materials.

Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region

AbstractThe measurement of mobility and threshold voltage in thin‐film transistors (TFTs) in which the mobility is a function of gate voltage or carrier density is usually done inaccurately. Herein, accurate mobility calculations within the framework of the gradual channel approximation are described. Conventionally, the derivative of drain current with respect to gate voltage is often used to calculate mobilities in the linear region. This procedure often leads to errors when the mobility is not constant. Using a first‐order finite difference‐based calculations, it is shown how the correct field‐effect mobility can be extracted. The corrected mobility can be smaller than the conventionally calculated field‐effect mobility by up to a factor of 2. It is also shown that the corrected field‐effect mobility is identical to the average mobility. A threshold voltage that is independent of gate voltage value and suitable for disordered semiconductors is used for more accurate mobility calculations. The mobility and threshold voltage calculations are illustrated with experimental data from multiple TFTs with indium gallium zinc oxide, zinc tin oxide, and molybdenum disulfide channel layers.

FUNDAMENTAL LIMITS FOR THE LENGTH OF CONDUCTION CHANNEL IN THE FET ON TRANSITION METALS DICHALCOGENIDE SINGLE LAYER BASE

The modeling of the limits of functionality for the FET with conduction channel on transition metals dichalcogenide single layer base and with different source/drain contacts material was performed in this article. The quantum mechanical transparency of the channel barrier was calculated with allowance for the realistic form of the barrier potential. It is demonstrated, that the FET with 4-nm channel of n-MoS2 and MoS2 (metallic modification) source/drain contacts retains high level of functionality for the range of comparatively low gate and drain voltages (the barrier transparency is lower than ½). The similar FET with Pt source/drain contacts, when Schottky barrier is essentially higher and the barrier transparency is essentially lower, keep it’s functionality for the 2 nm channel as well for all the realistic values of gate and drain voltages. The similar result was obtained for the FET with p-WSe2 channel and Pd contacts as well. The obtained estimations confirm the possibility of the complementary inverter on MoS2 n-type FET and WSe2 p-type FET with ultra-short channels in 2–4 nm range.

Nonequilibrium green function technique for analyzing electron transport through single and two levels of interacting quantum dot

The electron transport through nanoelectronic device, fabricated by coupling a QD into two metallic electrodes, is analyzed theoretically using Non-equilibrium Green function formalism. The considered QD has one quantum level with one-site coulomb interaction (two-channel for transportation). The spectra function of this QD is obtained by using Feynman diagram technique for single-level model and the equation of motion method for two-level model. Analytical approximations of electric current through this device are presented at low temperature and at finite temperature. Depending on the analytical approaches, we will analyze the dependency of nano-device current on the QD size, level width, and temperature. Finally, the dependency of current on the applied voltages is analyzed with respect to coulomb-blocked diamonds. The current-applied voltages characteristics help us to understand the behavior of nano-devices that has two channels of transport. We will show where and why the two-channel nano-device shows two and one current steps depending on the chosen value of gate voltage.

Novel pH Sensor Based on out-of-Equilibrium Body Potential Monitored in Silicon on Insulator with Metal Contacts

In the field of bio-chemical sensors, the ISFETs (Ion Sensing Field Effect Transistors) occupy an important position since 1972 [1]. ISFETs are based on the conductivity modulation when charges are placed close to the conductive channel or on the gate of the transistor. The majority of chemical and biochemical FET sensors monitor a change in the device current at constant gate voltage (VG) or a threshold voltage (VT) shift [2]. In both cases, the device is considered to be in a static state and its electrical response in “quasi-equilibrium”, even though the bio-chemical environment is modified in real-time. The originality of our work is to demonstrate the possibility of detection based on a measurement in out-of-equilibrium state of the device. Such out-of-equilibrium phenomena were already studied in silicon on insulator (SOI) devices and their presence is due to the fact that the body of the transistor is floating. When sweeping fast the device from accumulation to inversion or vice-versa, an SOI transistor shows an out-of-equilibrium body potential [3], which was exploited for memory applications [3]. The same phenomenon was shown in SOI substrates measured with metallic probes placed on the top silicon film and in which the substrate is used as back gate; DNA detection in this configuration was successfully demonstrated in [4].This paper shows the possibility to detect pH with a simple fabricated SOI structure with metal contacts deposited on the top, using the out-of-equilibrium body potential measurement. The out-of-equilibrium body potential (VB) is related to the absence of carriers in the Si film, while the VG is swept [5]. When the carriers are injected, the device reaches an equilibrium state and VB sharply drops to the “static” value. Interestingly, VB appears for low absolute gate-voltage values in which the current through the device is almost zero. Additionally, the out-of-equilibrium region is related to the VT value of the device, which is modulated by the presence of charges on the top Si, as in an ISFET. Hence the return to equilibrium will occur for different VG values, depending on the quantity of charges to-be-detected.Square mesas were etched on SOI wafers with 70nm silicon thickness and 30nm buried oxide (BOX) thickness. A lithography step allowed to define contact areas, where, the native silicon oxide was removed and a 300nm chromium (Cr) layer was deposited by sputtering at 120oC. The contact patterns were revealed after a lift-off step.The devices used for this study have two Cr pads on the edges (Fig.a). The pads were used as source (grounded) and as drain (for current measurement) or body contact. For the detection, a PDMS chamber with a 3mm diameter opening was placed in the center of each device. Initially, a reference curve without any solution was traced. Then the chamber was filled with solutions of pH values of 4, 7 or 10. The potential of the liquid was set to zero volts with an Ag/AgCl pseudo-reference electrode (RE), inserted through the upper limit of the liquid in the pH solution.Figure b and c show the drain current ID and the out-of-equilibrium VB versus VG of the samples under test when the solution was in contact with their top surface. Figure d illustrates the VT values extracted from the ID-VG curves and the VG values when VB=0.5V during the sharp drop. The results indicate a VB shift with various pH values. VB shift seems to be stronger than VT probably because it is traced when the device is depleted and hence the free carriers have an exponential dependence on the voltage. Additionally, the strong VB response occurs for low VG values (under the threshold), in a region where ID is small and more difficult to measure. This promises a more power-efficient detection method (VB based) compared to the commonly used modulation of conductance or VT shift. Explanation of the phenomena involved and more experimental results including a benchmark with wafers with thinner Si will be presented in the conference.In conclusion, devices based on SOI with Cr contacts are promising candidates for detection based on the out-of-equilibrium body potential reading. The dynamic reading method provides a robust voltage signature for lower operation voltages compared to the presently used “static” current measurements. The preliminary results imply a more pronounced shift to the presence of charges. In addition, the studied devices, which require very few and low temperature process steps, provide a naturally large sensing area, ideal for direct placement of charged species. Finally, the proximity of the charges to the conductive channel enhances the sensitivity of the devices.

Effect of Extrinsic Disorder on the Magnetoresistance Response of Gated Single-Layer Graphene Devices.

Analogous to the case of classical metal oxide semiconductor field-effect transistors, transport properties of graphene-based devices are determined by scattering from adventitious charged impurities that are invariably present. The presence of charged impurities renders experimental graphene samples "extrinsic" in that their electrical performances also depend on the environment in which graphene operates. While the role of such an extrinsic disorder component has been studied for conventional charge transport in graphene, its impact on the magnetotransport remains unexplored. Here, we show that single-layer graphene transistors with a low density of extrinsic disorder feature a larger magnetoresistance (MR) than those with a high density. Importantly, in gated single-layer devices with a low density of charged impurities, we find that MR peaks at gate voltage values far from the charge neutrality point not only at a low temperature but also at room temperature; in particular, MR approaches 800% at room temperature and 1400% at 50 K in such devices. In addition, dynamic measurements of MR on devices with a low degree of extrinsic disorder lead to stable and reliable single-layer graphene magnetosensors endowed with an ultralow power consumption of 2.5 nW. Our work indicates that the initial value of the minimum conductivity σ0 at room temperature along with carrier mobility must be looked at to select the most promising devices for magnetosensing.

On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

In this article, we present the results of on-wafer short-term (24 h) stress tests carried out on 0.25-μm AlGaN/GaN HEMTs. Devices on-wafer were submitted to 24-h dc tests, at various gate and drain voltage values corresponding to dissipated power densities PD up to 40 W/mm, with estimated channel temperature ~=375 °C. GEN1 devices adopted a Ni/Pt/Au gate metallization and conventional plasma-enhanced chemical vapor deposition (PE-CVD) SiN passivation; in GEN2 devices, a modified gate metallization and a two-layer SiN passivation were adopted. When tested at P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> > 25 W/mm, a substantial decrease of drain current ID and transconductance gm was measured in GEN1 HEMTs, without any significant shift of threshold voltage. Failure analysis revealed that Au and O interdiffusion took place from the sidewalls; Au gradually substituted Ni as a Schottky contact, while O, in the presence of high electric field, high temperature, and high current, promoted (Al)GaN oxidation and pitting. On the contrary, negligible degradation was found after high temperature storage of GEN1 devices without applied bias, up to 450 °C. In GEN2, process modification was effective in reducing the impact of this failure mechanism, resulting in only 5% gm decrease after 24 h at a junction temperature of 375 °C with P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> = 38 W/mm. Results demonstrate the effectiveness of the adopted on-wafer screening methodology in identifying potentially dangerous failure mechanisms.

Effect of Latitudinal and Longitudinal Grain Boundaries on the Characteristics of Polycrystalline Silicon MOSFET Devices

The MOSFETs, Complementary MOS-ICs are the core switch devices of current which also critically affects the ICs. For higher IC performance the present era has shifted to the device scaling to sub-50nm range TFT (thin film transistor) based MOSFET which involves complex fabrication process. The presence of grain boundaries greatly affects the characteristics of these devices. Present paper describes dependence of output characteristics inpolycrystalline silicon MOSFET devices on the longitudinal and latitudinal grain boundaries (GBs) have been investigated theoretically. It is observed that in both latitudinal and longitudinal GBs, the GB scattering potential ‘qφ’ and the GB distribution parameter ‘s’ are equally involved. At all values of gate voltages the contribution in drain current of the device is more due to latitudinal GBs in comparison to longitudinal GBs. However, at high gate voltages longitudinal GBs play a significant role in the drain current of the device.The theoretical computations of the model are synonymous to the experimental work.

Electronic Properties Simulation of Guanine Molecule

This work studies, theoretically, electronic properties of DNA-based guanine molecule. General formula for the transmission probability for electron transfer through Guanine Molecule is derived. Guanine molecule is assumed to be as one active region connected between two leads. In the transmission calculation, three different locations of the onsite energy were noticed due to the change of the gate voltages applied on the molecule. Also, the (I-V) curve characteristics of Guanine was obtained by using tight binding model and steady state. The current as a function of gate voltage, that is varying between -4 to 4 eV, is also investigated. It is found that the current arises and vanishes at different gate voltage values to show gate switching states. Further, the relationship between different gate voltage values and different bias voltage values was presented to show the logic gate behavior. Moreover, conductance as a function of temperature study was stated. It shows two current behaviors, independent and strong dependence on temperature value, that changes the leads energy. These properties can be effectively used for molecular electronic devices.

Influence of the Biomaterial Thickness in a Dielectrically Charged Modulated Fringing Field Bio-Tunnel-FET Device

The biosensor market is expected to increase more than 40% in 5 years ( 2019 to 2024) due to the versatile of these devices (1). Many research groups are studying new types and optimizations of these devices and the tunnel field-effect transistors (TFET) have attracted the interest due to the many advantages of these devices (2).Figure 1 shows the Bio-TFET cross section which has been simulated with TCAD Sentaurus (3). The proposed device has a gate length (LG), equivalent gate oxide thickness (tox) and channel silicon thickness (tSi) of 40 nm, 1 nm and 10 nm. The drain underlap (LUD) is variable in the range of 1 to 100 nm. The uniform doping profile of the device consists of a source and drain doping concentration of 1020 atom/cm3 of boron and arsenic, respectively. An intrinsic channel with 1015 atom/cm3 of boron. The gate electrode has a workfunction of 4.7 eV. The main models incorporated in the simulation were the bandgap narrowing (BGN), Shockley Read Hall recombination (SRH) and the nonlocal band-to-band tunneling (BTBT). In the drain underlap region is deposited a biomaterial for biosensing purposes. This material has a dielectric constant (k, where ε=k*ε0) of 1 (air), 2.1 (Streptavidin), 3.57 (APTES), 8 (Anti-Iris antibody) and 10 (Isoquinoline) (4).Figure 2 shows the Bio-TFET transfer characteristics. The ambipolar region is a parasitic tunneling current that occurs for negative gate bias (VG) for nTFET at drain to channel region. In order to decrease this effect a drain underlap (LUD) is performed at the device (5). However, when the biomaterial dielectric constant (k) increases, the ambipolar current also increases orders of magnitude, meaning that the device is very susceptible to k variation in the biomaterial region and can be used for biosensing of different types of biomolecules with a distinct k. In order to quantify the influence of change in k in the biomaterial region the equation in terms of ID: Sensitivity = ΔID/ID(Ref.) was used. Where ΔID represents the difference between the drain current of biosensing (output), e.g., the drain current with the presence of biomaterial ID(Bio) and the drain current of reference ID (Ref.) (input), e.g., drain current without biomaterial ID (k=1) . Both for a fixed value of gate voltage (VG = -2 V) in the ambipolar region. Fig.3 shows the sensitivity of the device as a function of LUD for different k values. The maximum sensitivity occurs for a LUD = 30 nm for all range of k values. The sensitivity increases for higher k as reported in (6). Another parameter that is important for sensing is the dimension of the target. Many biomolecules have different types, e.g., spherical, ellipsoidal or elongated (7). Therefore, the study of the parameter is fundamental for the functional operation of the device. In Fig.4 the sensitivity is analyzed as a function of biomaterial thickness (tBio) for a fixed value of LUD=30nm. With the rising of tBio and k the sensitivity increases, i.e., exceeding 2 orders of magnitude comparing tBio = 10nm and tBio = 30 nm for k = 10. This increment on sensitivity is due to the tunneling length lowering, as can be noticed in Fig.5. The tunneling length decrease from 5.7 nm (tBio= 10 nm) to 9.5 nm (tBio = 30 nm), both for k = 10 and fixed energy of - 1 eV. The lowering of the tunneling length increases the ambipolar current ID(Bio) that enhances the sensitivity of the device. An important consideration for the biosensing process is the charge on the biomaterial that affect the tunneling current and therefore affect the sensitivity of the device. In Fig. 6, the sensitivity is studied as in the function of positive fixed charges in the range of 1010 to 1012 cm-2. The sensitivity increases for thicker values of tBio. This is due to the higher effect of the fringing field in the region. As tBio increase the effect of fringing field increases in the biomaterial region and as consequence, the device becomes more sensible with the presence of charges.The study of charges and biomaterial thickness in a dielectrically modulated fringing field Bio-TFET was performed in this work. The device shows high sensitivity with the increase of tBio in the range studied in this work. Although, the effect of fixed charges is more notable for thicker tBio. Then, the tBio thickness shows a high impact in the sensing of the device. Figure 1

Josephson Field-Effect Transistors Based on All-Metallic Al/Cu/Al Proximity Nanojunctions.

We demonstrate proximity-based all-metallic mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature Tc down to 50 mK in the presence of both electric and magnetic fields. The ability of a static electric field-applied by means of a lateral gate electrode-to suppress the critical current Is in a proximity-induced superconductor is proven for both positive and negative gate voltage values. Is reached typically about one-third of its initial value, saturating at high gate voltages. The transconductance of our SNS-FETs obtains values as high as 100 nA/V at 100 mK. On the fundamental physics side, our results suggest that the mechanism at the basis of the observed phenomenon is quite general and does not rely on the existence of a true pairing potential, but rather the presence of superconducting correlations is enough for the effect to occur. On the technological side, our findings widen the family of materials available for the implementation of all-metallic field-effect transistors to synthetic proximity-induced superconductors.

Spin-filter transport and magnetic properties in a binuclear Cu(ii) expanded porphyrin based molecular junction.

Although the magnetic and transport properties of molecular junction systems composed of metalled porphyrins or phthalocyanines have been broadly studied in recent years, to date no studies have been devoted to evaluate the aforementioned properties in junction systems featuring metalled expanded porphyrins as active elements. The present work reports a detailed theoretical study of the magnetic and electronic transport properties of the recently synthesized dinuclear Cu(ii)-naphthoisoamethyrin complex (PyCu2). This is the first work on performing these kinds of studies using a magnetically coupled metallic expanded porphyrin as a molecular kernel. DFT and wave function-based methods have been used to determine the nature of the magnetic interaction between the metallic centres, characterized by the exchange coupling constant J, showing that although this was found to be weakly antiferromagnetic, after an exhaustive analysis it turns out that the coupling has a ferromagnetic nature with a value of J = 14.2 cm-1. Once the magnetic ground state of PyCu2 was rigorously established, the spin resolved transport properties of the device composed of the expanded porphyrin attached to two gold nano-wires were studied by means of the combination of DFT and the nonequilibrium Green's function formalism, in order to explore PyCu2 prospects as a possible spintronic device.

Metallic supercurrent field-effect transistor.

In their original formulation of superconductivity, the London brothers predicted1 the exponential suppression of an electrostatic field inside a superconductor over the so-called London penetration depth2-4, λL. Despite a few experiments indicating hints of perturbation induced by electrostatic fields5-7, no clue has been provided so far on the possibility to manipulate metallic superconductors via the field effect. Here, we report field-effect control of the supercurrent in all-metallic transistors made of different Bardeen-Cooper-Schrieffer superconducting thin films. At low temperature, our field-effect transistors show a monotonic decay of the critical current under increasing electrostatic field up to total quenching for gate voltage values as large as ±40 V in titanium-based devices. This bipolar field effect persists up to ~85% of the critical temperature (~0.41 K), and in the presence of sizable magnetic fields. A similar behaviour is observed in aluminium thin-film field-effect transistors. A phenomenological theory accounts for our observations, and points towards the interpretation in terms of an electric-field-induced perturbation propagating inside the superconducting film. In our understanding, this affects the pairing potential and quenches the supercurrent. These results could represent a groundbreaking asset for the realization of all-metallic superconducting field-effect electronics and leading-edge quantum information architectures8,9.

Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.

Giant Magnetoresistance in Carbon Nanotubes with Single-Molecule Magnets TbPc2.

We present experimental results and a theoretical model for the gate-controlled spin-valve effect in carbon nanotubes with side-attached single-molecule magnets TbPc2 (Terbium(III) bis-phthalocyanine). These structures show a giant magnetoresistance up to 1000% in experiments on single-wall nanotubes that are tunnel-coupled to the leads. The proposed theoretical model combines the spin-dependent Fano effect with Coulomb blockade and predicts a spin-spin interaction between the TbPc2 molecules, mediated by conducting electrons via the charging effect. This gate-tuned interaction is responsible for the stable magnetic ordering of the inner spins of the molecules in the absence of magnetic field. In the case of antiferromagnetic arrangement, electrons with either spin experience the scattering by the molecules, which results in blocking the linear transport. In strong magnetic fields, the Zeeman energy exceeds the effective antiferromagnetic coupling and one species of electrons is not scattered by molecules, which leads to a much lower total resistance at the resonant values of gate voltage, and hence to a supramolecular spin-valve effect.

A Novel ${{V}}_{\textsf {DSAT}}$ Extraction Method for Tunnel FETs and Its Implication on Analog Design

This brief investigates for the first time, a method to extract the value of saturation drain voltage for a tunnel FET. The saturation in output characteristics of a TFET is found to take place when the difference in conduction band energy ( $\Delta {\textsf {E}}_{{\textsf {C}}}$ ) of channel ( ${{E}_{\text{CC}}}$ ) and drain ( ${{E}_{\text{CD}}}$ ) is a few ${{K}_{B}}{T}$ . As the drain voltage ( ${{V}_{\text{DS}}}$ ) increases, it is found that the device initially enters in a soft saturation state and subsequently into deep saturation. For any given value of gate voltage ( ${{V}_{\text{GS}}}$ ), the onset of soft and deep saturation happens for a constant difference in ${{V}_{\text{GS}}}$ and ${{V}_{\text{DS}}}$ . We propose a novel method to extract this voltage difference ${{V}_{\text{GD}}}$ , which is explained using a phenomenological approach. We have also validated our results with published experimental data. It is found that the output resistance ( ${{R}_{o}}$ ), transconductance ( ${{g}_{{m}}}$ ), and intrinsic gain ( ${{g}_{{m}}}\times {{R}_{{o}}}$ ) increase when the device enters in a soft saturation and attain a maximum value in deep saturation regime. Furthermore, a common source amplifier biased in soft saturation is also demonstrated to have a comparable voltage gain and bandwidth to the one biased in deep saturation.