FUNDAMENTAL LIMITS FOR THE LENGTH OF CONDUCTION CHANNEL IN THE FET ON TRANSITION METALS DICHALCOGENIDE SINGLE LAYER BASE

Abstract

The modeling of the limits of functionality for the FET with conduction channel on transition metals dichalcogenide single layer base and with different source/drain contacts material was performed in this article. The quantum mechanical transparency of the channel barrier was calculated with allowance for the realistic form of the barrier potential. It is demonstrated, that the FET with 4-nm channel of n-MoS2 and MoS2 (metallic modification) source/drain contacts retains high level of functionality for the range of comparatively low gate and drain voltages (the barrier transparency is lower than ½). The similar FET with Pt source/drain contacts, when Schottky barrier is essentially higher and the barrier transparency is essentially lower, keep it’s functionality for the 2 nm channel as well for all the realistic values of gate and drain voltages. The similar result was obtained for the FET with p-WSe2 channel and Pd contacts as well. The obtained estimations confirm the possibility of the complementary inverter on MoS2 n-type FET and WSe2 p-type FET with ultra-short channels in 2–4 nm range.