AbstractCharge‐transport parameters measured for several single‐crystal CVD‐diamond films are discussed as well as the consequences for the energy‐ and the time resolution of charged‐particle detectors made of these samples. Applying a transient‐current technique, where 241Am α‐particles are used for e–h pair creation, low‐field electron mobility values varying in the range 1300 < µ 0–e [cm2/Vs] < 3100 are obtained, and a common saturation velocity around v sat–e ≈ 1.9 × 107 [cm/s]. Hole data show impressive uniformity with µ 0–h ≈ 2330 [cm2/Vs] and v sat–h ≈ 1.4 × 107 [cm/s]. At detector operation bias (0.3 V/μm < E D < 3 V/μm) the holes drift systematically faster than the electrons. The lifetime of the charge carriers in best samples amounts to τ h ≈ 1 µs for holes and to τ e ∼ 320 ns for electrons. Comparable to the energy resolution of commercial silicon detectors, a ΔE = 17 keV (FWHM) is measured for 5.5 MeV α‐particles and ΔE /E ∼ 1% for heavy ions. Tests of single‐ and polycrystalline detectors with relativistic 27Al ions of 2 AGeV reveal the same intrinsic time resolution of σ (Δt) = 28 ps indicating limitations due to electronic noise. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)