High electron mobility in SiGe/Si n -MODFET structures on sapphire substrates

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For the first time, SiGe/Si n-modulation doped field effect transistor (n-MODFET) structures have been grown on sapphire substrates. A room temperature electron mobility value of 1271 cm2/V-s at an electron carrier density (ne) of 1.6×1012 cm−2 was obtained. At 250 mK, the mobility increases to 13 313 cm2/V-s (ne=1.33×1012 cm−2) and Shubnikov-de Haas oscillations appear, showing excellent confinement of the two-dimensional electron gas.