Wide-bandgap chalcopyrite materials are attractive candidates for a wide variety of energy conversion devices such as the top cell of tandem-type photovoltaic devices and photoelectrochemical water splitting hydrogen evolution devices. Nevertheless, simultaneous realization of high open circuit voltage (VOC) and high fill factor (FF) values has been challenging, and thus, the photovoltaic performance has been limited. In this article, high VOC and high FF values of wide-gap chalcopyrite CuGaSe2 thin-film solar cells are simultaneously demonstrated using an aluminum-induced back-surface field effect. An independently certified photovoltaic efficiency of 12.25% was obtained from an elemental In-free CuGaSe2:Al (bandgap energy ∼1.7 eV) solar cell (VOC: 0.959 V, short circuit current density: 17.64 mA cm-2, FF: 72.5%). In addition, an over 1 V-VOC CuGaSe2 cell (FF: 74.5%) was obtained even with the use of a conventional CdS buffer layer. Although incorporation of aluminum often leads to degradation of the chalcopyrite solar cell performance, the addition of a small amount of aluminum is found to be effective in enhancing wide-gap chalcopyrite photovoltaic performance.
Read full abstract