Abstract
Achieving optimal efficiency in perovskite solar cells (PSCs) necessitates the creation of a light-absorbing layer with superior crystallization, minimal defect concentration, exceptional stability and better energy level alignment. In this context, the active layer of the PSCs comprises (Cs0.15FA0.81MA0.04PbBr0.14I2.86), incorporating MAPbBr3 quantum dots doped with toluene as an anti-solvent to enhance device performance, achieving a Photovoltaic Conversion Efficiency (PCE) of 18.9 %. Furthermore, GuBr is introduced at the interface between NiOx and photovoltaic active layer for effective interface modification. These improvements lead to optimized devices, particularly with GuBr modification at doping amount of 3 mg/ml, showcasing an impressive PCE of 20.6 %. Noteworthy attributes of these devices include a short-circuit current density of 24.7 mA/cm2 and an open-circuit voltage (Voc) value of 1.02 V. Significantly, the altered film retained more than 81 % of its original effectiveness for a prolonged duration surpassing 10 days. The conclusive findings underscore the successful attainment of high efficiency and high stability through the employed design strategy in PSCs.
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