Valley-polarized quantum anomalous Hall effect is significant for quantum information processing based on the valley degree of freedom, but its implementation in two-dimensional materials is currently challenging. Through first-principle calculations, we investigate the electronic structure, magnetic and topological properties of the TiBrTe monolayer. TiBrTe monolayer is an intrinsic ferrovalley semiconductor with an in-plane easy axis of magnetization and a high Curie temperature of 569 K. The valley polarization in the TiBrTe monolayer can be adjusted or flipped by manipulating the magnetization orientation of the magnetic atoms. The electronic correlation effect can be used to manipulate the different energy gaps of K and -K valleys. A topological phase transition occurs with increasing electronic correlation effect, and valley-polarized quantum anomalous Hall effect can be induced, which originates from the sign-reversible Berry curvature and band inversion between dx2−y2/dxy and dz2 orbitals. These results provide an avenue for the applications of valleytronic quantum devices.