Ga-doped ZnO (GZO) nanocrystals were synthesized via the hot-injection method for the first time. The characterizations of its structure, composition, morphology, and absorption properties were conducted by using powder X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and UV–vis absorption spectroscopy. The results indicated that GZO nanocrystals were single phase polycrystalline within a range of 5―10 nm. Optical measurements illustrated that GZO nanocrystals have a tunable band gap from 3.35 to 3.81 eV, depending on the Ga doping level. GZO nanocrystals were dispersed in nonpolar solvents to form a nanocrystal ink which could remain stable after a month of storage. The GZO thin film was fabricated by spin coating the GZO nanocrystal ink and annealing in air. The electrical resistivity of the film was measured to be 7.5 × 10 −2 Ω cm. This method, which eliminated the requirement of high vacuum and high temperature, was a promising alternative for transparent conducting oxide (TCO) fabrication.