Vacancy-related Defects Research Articles

Correlation of Phase Structure, Defect Relaxation, and Microwave Dielectric Properties in Low-Loss Mgn+1TinO3n+1 Ceramic Systems.

Low-loss microwave dielectrics are of significant importance for the miniaturization and integration of microwave devices. In this paper, the ceramics of nominal composition Mgn+1TinO3n+1 (n = 3-6) are synthesized, and the correlations among their phase compositions, defect behaviors, and microwave dielectric properties are systematically investigated. The analyses indicate that the Mgn+1TinO3n+1 ceramics are a biphasic system consisting of hexagonal ilmenite-structured MgTiO3 and cubic spinel-structured Mg2TiO4. The Rietveld refinement results demonstrate that as the n value increases, the content of the MgTiO3 phase gradually increases, while that of the Mg2TiO4 phase decreases. The results of the thermally stimulated depolarization current (TSDC) indicate that the oxygen vacancy-related defects are considered to be the main types of defects in Mgn+1TinO3n+1. As the value of n increases, the increase of the MgTiO3 phases with a more stable crystal structure leads to a gradual decrease in the concentration of oxygen vacancies. The Mgn+1TinO3n+1 ceramics exhibit excellent microwave dielectric properties at n = 6: εr = 17.55, Q × f = 284,600 GHz, and τf = -46.39 ppm/°C. In addition, the relationship between the dielectric constant and the electric field distribution is solved utilizing high-frequency structure simulator (HFSS) software, and the Q × f values are also predicted. The low-frequency dielectric temperature spectra and direct current pulse charge/discharge tests show that the low-loss Mgn+1TinO3n+1 ceramics can be good candidates for microwave capacitors even when operated under high-temperature conditions.

Amorphous Ga2O3 Semiconductor: A New Solution for Robust X‐Ray Dosimeters

AbstractAs most commonly used miniature solid‐state dosimeter, metal‐oxide‐semiconductor field effect transistors (MOSFETs) have been facing unavoidable gate leakage and robustness problems due to the double‐sided role of traps in oxide insulators. Herein, a new solution for X‐ray dosimeter has been proposed which leverages the conductivity change of amorphous Ga2O3 (a‐Ga2O3) channel instead of charge trapping in oxide insulators. Increasingly negatively‐shifted threshold voltage (Vth) of a‐Ga2O3 thin‐film transistor is recorded together with almost unchanged subthreshold swing (SS) and field‐effect mobility (µFE) after X‐ray irradiations. X‐ray‐induced‐variation of oxygen vacancy (VO) related defects in a‐Ga2O3 is revealed after a combined investigation of X‐ray photoelectron spectroscopy (XPS) and neutron reflectivity (NR) measurements, contributing to the indicative Vth shift related with X‐ray dosage. A functional recovery is realized through an annealing process in air condition, showing the high reliability of a‐Ga2O3 semiconductor. Moreover, the unique merit of no need for power supply during X‐ray irradiations, beneficial from the slow neutralization rate of ionized VO related defects, imparts an offline working capability to the dosimeter. This work provides a potential strategy to monitor X‐ray dosage via utilizing the X‐ray‐induced change of amorphous oxide semiconductor conductivity, hence addressing the reliability and repeatability issues in present MOSFET devices.

Electro-optical and thermal characterization of cadmium doped copper tartrate crystals grown in silica gel

Cadmium doped copper tartrate crystals were grown by Gel Growth technique by single diffusion. Silica gel of optimum specific gravity was set with tartaric acid at optimum pH and aging period for crystal growth. Band gap of cadmium doped copper tartrate crystal is determined using Ultraviolet-Visible Spectroscopy is 5.780 eV. Blue Color of cadmium Copper tartrate crystal and transparency is confirmed using Photoluminescence spectroscopy. Emission originates from Cu2+ vacancy-related defects or their complexes. Dimensions of crystals are found from Powder X-Ray Diffraction data. The edge lengths of unit cell calculated from indexing of PXRD data are, a = 5.47 Å, b =11.76 Å, c =9.20Å and volume of unit cell is, 621.02208 Å3.

A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes

4H-SiC Schottky barrier diodes (SBDs) were exposed to 5.4 MeV alpha particles with fluences of 2.55× 1011 cm−2, 5.11 × 1011 cm−2 and 7.67 × 1011 cm−2, respectively. Transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) was used to determine the structure and cross-sectional elemental composition of the device, while current–voltage and capacitance–voltage profiling were used to determine the primary electrical device-characteristics before and after irradiation. EDS revealed the presence of a <1 μm Ti layer, covered by 5 μm Al layer, in intimate contact with the SiC. Deep level transient spectroscopy (DLTS), performed in the temperature range 15–310 K, revealed one dominant peak around 50 K (Ec - 0.07 eV) in the unirradiated samples. This peak showed asymmetry suggesting that it may consist of more than one defect. Notably, Z1/2, the carbon vacancy-related (Vc) defect commonly observed in as-grown n-type 4H-SiC, was not detected in the unirradiated reference sample. After irradiation, a broad peak emerged around 280 K (at 80 Hz), most likely Z1/2, having a shoulder around 180 K, was detected. Increasing the fluence resulted in a corresponding decrease in the concentration of the electron trap observed around 50 K (Ec - 0.07 eV), while the concentration increases for the defect detected around 280 K. Notably, the concentration of Z1/2 was found to be strongly fluence dependent and linked to what we believe is a related to a silicon vacancy transition, labelled S1/2 in literature. Laplace DLTS confirmed that the peak observed around 50 K is composed of multiple defects.

Impact of In-doping and post-annealing on the properties of SnO2 thin films deposited by magnetron sputtering

SnO2 is a transparent semiconductor that has shown versatile applications in various fields. This study investigates the impact of In-incorporation and post-annealing on the structural, optical and electronical properties of SnO2 thin films deposited via RF magnetron sputtering. Three SnO2 target compositions were employed, with one unintentionally doped (UID), one with 1.0 at% In, and the other with 18.2 at% In. UV–vis spectroscopy reveals the presence of band tails in the as-deposited films, which can be significantly suppressed through annealing, particularly in air. Oxygen vacancy-related defect states below the conduction band minimum are believed to be responsible. Further, film thicknesses, refractive indices, and absorption coefficients were estimated from the UV–vis spectra of the films, employing the irritative Swanepoel method. The resistivities of SnO2:In films exhibit parabolic trends with respect to annealing temperature with minima values at 300 °C, while that of UID-SnO2 increases monotonically. P-type conductivity was found in the 300 °C-annealed SnO2:18.2 at% In films both in air and N2, with the N2-annealing leading to higher mobility (162.7 cm2·V−1·s−1) and lower resistivity (0.57 Ω·cm). The Fermi levels of the SnO2:In films are found to locate deep inside the bandgap, which is beneficial to form homojunctions with SnO2 of shallow Fermi levels.

Modulating vacancy-related defects and hole extraction via a multifunctional additive for high-performance perovskite solar cells

Modulating vacancy-related defects and hole extraction via a multifunctional additive for high-performance perovskite solar cells

Effects of high-temperature annealing on vacancy complexes and luminescence properties in multilayer periodic structures with elastically strained GeSiSn layers

Effects of postgrowth high-temperature annealing on vacancy complexes and photoluminescence (PL) from GeSiSn/Si multiple quantum wells (MQWs) are studied. The series of PL peaks related to the vacancy-tin complexes was observed for as-grown samples including different structures, such as GeSiSn/Si MQWs, multilayer periodic structure with GeSiSn quantum dots (QDs), GeSn cross-structures upon GeSiSn/Si MQWs, and thick GeSiSn layers. The PL band intensity is significantly reduced after annealing at 700 °C corresponding to the reduction in vacancy density, as demonstrated by the positron annihilation spectroscopy (PAS) data. Such annealing also results in the appearance of the PL signal related to the interband optical transitions in GeSiSn/Si MQWs. However, the high temperature could negatively impact the sharpness of heterointerfaces due to Sn diffusion, thus limiting the PL efficiency. To improve the luminescence properties of GeSiSn/Si structures, we proposed a two-stage technique combining both the annealing and subsequent treatment of samples in a hydrogen plasma at 200 °C. The plasma treatment significantly reduces the PL band of vacancy-related defects, whereas annealing at a moderate temperature of ∼600 °C prevents the blurring of heterointerfaces. As a result, we demonstrate an increase in the relative efficiency of interband PL of type II GeSiSn/Si MQW structures emitting in the range of 1.5–2 μm.

Effects of hydrogen doping on the phase structure and optoelectronic properties of p-type transparent SnO

Hydrogen (H) is a ubiquitous impurity, which can significantly affect the phase structure and the optoelectronic properties of oxide semiconductors. To date, a well-established understanding of the effects of H doping on the properties of p-type transparent SnO is still lacking. Here, we present a comparative study to reveal the role of H in SnO films by magnetron sputtering. We find that in as-grown undoped SnO films, in addition to the tetragonal SnO phase, secondary phases of SnO2 or Sn3O4 are present under certain growth temperatures. In contrast, a small fraction of metallic Sn phase is included in the as-grown H-doped SnO (SnO:H) films, attributed to the partial reduction of SnO by the H2 in the sputtering gas. Effects of post thermal annealing (PTA) on the properties of SnO films are also explored. Results strongly indicate that H doping or PTA facilitates the formation of Sn phase and Sn vacancies related defects, giving rise to the p-type conductivity observed in the undoped or H-doped SnO films. The present study provides a comprehensive understanding of the evolution of phase structures as well as defect properties of SnO films, which is crucial for their future studies and optoelectronic applications.

Synergistic effect of electrical bias and proton irradiation on the electrical performance of β-Ga2O3 p–n diode

The synergistic impact of reverse bias stress and 3 MeV proton irradiation on the β-Ga2O3 p–n diode has been studied from the perspective of the defect in this work. The forward current density (JF) is significantly decreased with the increase in proton irradiation fluence. According to the deep-level transient spectroscopy results, the increase in the acceptor-like trap with an energy level of EC-0.75 eV within the β-Ga2O3 drift layer, which is most likely to be Ga vacancy-related defects, can be the key origin of the device degradation. The increase in these acceptor-like traps results in the carrier concentration reduction, which in turn leads to a decrease in JF. Furthermore, compared with the case of proton irradiation with no bias, the introduction of −100 V electrical stress induced a nearly double decrease in JF. Based on the capacitance–voltage (C–V) measurement, with the support of the electric field, the carrier removal rate increased from 335 to 600 cm−1. Similar to the above-mentioned phenomenon, the trap concentration also increased significantly. We propose a hypothesis elucidating the synergistic effect of electrical stress and proton irradiation through the behavior of recoil nuclei under the electric field.

Defect-dependent environmental stability of high mobility transparent conducting In-doped CdO

Highly degenerate n-type CdO with high electron mobility is a promising transparent conducting oxide (TCO) for optoelectronic devices utilizing a spectrum in the Vis-NIR range. In particular, it has been shown that doped CdO thin films can show much superior transparency of &amp;gt;80% in the NIR region compared to conventional transparent conducting oxide (e.g., Sn-doped In2O3) thin films with a similar sheet resistance. However, CdO thin films typically experience rapid degradation in their electron mobilities when exposed to environmental conditions with H2O moisture. Here, we studied the effects of thermal annealing on the environmental stability of In-doped CdO (CdO:In) using a combination of different analytical techniques. CdO:In thin films with different In concentration (0%–8.3%) synthesized by magnetron sputtering were subjected to different post-thermal annealing (PTA) and then aged in different environmental conditions with varying relative humidity (RH) in the range of 0%–85%. Our results reveal that the degradation of CdO:In thin films can be primarily attributed to the oxygen vacancy-related defects at the grain boundaries, which can readily react with the OH− in the moisture. The moisture induced degradation can be mitigated by appropriate PTA at high temperatures (&amp;gt;400 °C) where grain boundary defects, primarily associated with Cd vacancies, can be passivated through hydrogen (H), thus enhancing their environmental stability. The present study provides a comprehensive understanding of the instability mechanisms and defect passivation in transparent conducting CdO:In thin films, which can also be relevant for other wide gap oxides.

Exploration of structural influences on the ferroelectric switching characteristics of ferroelectric thin-film transistors.

In this paper, quantitative analysis was performed focusing on the structural effect on the ferroelectric switching of ferroelectric thin-film transistors (FeTFTs). FeTFTs and ferroelectric capacitor (FeCap) test element groups (TEGs) were designed and fabricated, and positive-up-negative-down (PUND) measurements were performed to analyze the switching characteristics of ferroelectric films in various structures constituting an FeTFT. It was verified that TiN/HZO/a-IGZO/Mo (MFSM, FeTFT source/drain contact) mostly contributed to the memory operation of an FeTFT, while TiN/HZO/a-IGZO (MFS, FeTFT channel) exhibits one-time memory operation with irreversible polarization switching. In addition, the switching characteristics of MFSM and MFS were different from those of MFM, especially after a few cycles, related to the oxygen vacancy migration between a-IGZO channels and HZO films. The extracted 2Pr values for MFS, MFSM and TiN/HZO/Mo (MFM, FeTFT source/drain parasitic capacitor) were 38, 28 and 20 [μC cm-2], respectively. Based on the operation differences according to the device structure, it was found that irreversible switching in the MFS region (channel) causes a rapid decrease in the memory window after the first switching in an FeTFT and degradation of a-IGZO and HZO films in the MFSM region (contact) including oxygen vacancy exchange and related defect generation causes subthreshold slope increases and negative threshold voltage shifts as cycling stress was applied.

Ultraviolet photo-response properties of bush-like ZnO nanorods deposited by chemical bath deposition

“Bush-like zinc oxide nanorods (ZnO NRs) has been deposited on soda-lime glass substrate via two step deposition process: seed layer deposition through Atmospheric chemical vapor deposition (APCVD) followed by chemical bath deposition (CBD) for growing NRs. Depositional parameters were carefully optimized so as to obtain a porous bush-like aggregation of ZnO NRs. X-ray Diffraction confirmed the formation of ZnO and scanning electron microscope showed bush-like aggregation of ZnO NRs. Transmission Electron Microscopy revealed that mostly non-polar {101¯0} and {112¯0} surfaces were exposed to the ambience. Room temperature Photoluminescence spectroscopy indicated the presence of mostly oxygen vacancy (VO) related defect states centered at 2.32 and 2.0 eV. Ultraviolet (UV) photo-response of the specimen was measured in air and nitrogen ambience. Higher photosensitivity (3166 % in nitrogen; 2233 % in air) but slower photo-response were observed under nitrogen ambience. It was found that UV photo-response properties of ZnO NRs were mostly a surface phenomenon dominated by adsorption-desorption mechanism of ambient oxygen molecules on the ZnO surface, mediated by surface defects related to VO, such as singly ionized state of VO. Bush-like aggregation of the ZnO NRs might have aided adsorption-desorption mechanism.”

Synergetic mixed ionic liquid strategy for comprehensive defect passivation and increased carrier mobility in high-performance green perovskite light-emitting diodes

Metal halide perovskites have recently garnered significant attention owing to their potential in light-emitting diode applications. The performance of perovskite light-emitting diodes (PeLEDs) can be significantly influenced by mitigating the halide vacancy-related defects and optimizing the morphology of the perovskite layer. Achieving defect passivation in perovskites often involves the incorporation of electrically insulating long-chain ligands, which can result in the transformation of the three-dimensional perovskite structure to lower-dimensional structures. This enhances its optoelectronic properties, but reduces the interparticle charge transport, thus limiting the performance of the PeLEDs. This study demonstrates a novel approach for passivating defects by utilizing mixed ionic liquid (IL) additives, namely 1-butyl-3-methylimidazolium tetrafluoroborate (BMIMBF4) and 1-benzyl-3-methylimidazolium tetrafluoroborate (BZIMBF4). The BMIMBF4 enhances carrier mobility, whereas BZIMBF4 enhances the film morphology and improves defect passivation within the perovskite active layer. Consequently, the mixed IL strategy enables improved control over the crystal growth kinetics, alteration of crystallographic orientation, superior defect passivation, and adjustment of the energy band levels. Additionally, this IL-based approach maintains the three-dimensional structure of the perovskite, thus preserving good charge transport properties compared to organic ligands. These combined effects result in high-performance green PeLEDs with a maximum external quantum efficiency of 20.03% and a brightness of 57599.36 cd/m2.

Symmetric carbon tetramers forming spin qubits in hexagonal boron nitride

Point defect quantum bits in semiconductors have the potential to revolutionize sensing at atomic scales. Currently, vacancy-related defects are at the forefront of high spatial resolution and low-dimensional sensing. On the other hand, it is expected that impurity-related defect structures may give rise to new features that could further advance quantum sensing in low dimensions. Here, we study the symmetric carbon tetramer clusters in hexagonal boron nitride and propose them as spin qubits for sensing. We utilize periodic-DFT and quantum chemistry approaches to reliably and accurately predict the electronic, optical, and spin properties of the studied defect. We show that the nitrogen-centered symmetric carbon tetramer gives rise to spin state-dependent optical signals with strain-sensitive intersystem crossing rates. Furthermore, the weak hyperfine coupling of the defect to their spin environments results in a reduced electron spin resonance linewidth that can enhance sensitivity.

Defect evolution of iodine vacancy and related strain modulation in all-inorganic halide perovskites

Vacancy related defects play a crucial role in optoelectronic properties and carrier transport for photovoltaic materials, especially for its structural evolution becoming non-radiative defects induced by strain. Thus far, the evolution phenomena of vacancy defects in halide perovskite triggered by energy or strain have not been systematically investigated. Herein, we study the change in defect levels occurred in different inorganic perovskite systems and the situation caused by strain in varied strength based on density functional theory calculations. We discover that VI deep levels are easily transformed from shallow levels due to the formation of Pb–Pb dimers and octahedral distortion in all-inorganic perovskites, especially in CsPbI3. Moreover, strain can be quantitatively applied to control the suppression or enhancement of the formation of dimer in CsBI3 (B = Pb/Ge) perovskites. Eventually, our calculation results unravel that the defect physics of VI defect and the formation mechanism of non-radiative center in all inorganic perovskites, which depends on the strain strength and the accompanying octahedral distortion. The strain modulation and its quantitation effect on defect evolution of dominant vacancy map a pioneering route toward fabricating high performance inorganic photovoltaics.

Correlation between oxygen-related defects and lattice strain in tetragonal phase stabilized doped-zirconia systems

Zirconia (ZrO2) in the tetragonal phase finds a wide variety of applications. Oxygen vacancy and lattice strain are known to play a crucial role in the stabilization of these ceramics in the desired phase. In this article, the intertwining of oxygen-related defect states and relative strain in the host matrix in determining the phase-stability in Ca2+, Y3+, and Gd3+ has been focused on by employing micro-Raman and micro-photoluminescence spectroscopy over a wide temperature range, between 80 K and 675 K. While the temperature-dependent photoluminescence spectra probed the evolution of defect states, the concurrent strain in the lattice could be investigated by temperature-dependent Raman measurements. We correlate the presence of excess vacancy-related defects and oxygen interstitials to tensile and compressive strain in the Ca2+, Y3+, and Gd3+-doped host matrix in the tetragonal phase.

Understanding the effect of morphological change on photocatalytic activity of ZnO nanostructures and reaction mechanism by molecular dynamics

The photocatalytic activity of photocatalysts is often influenced by their particle morphology, dimension, size, exposed facets, porosity, etc. This work aims at gaining insights into the influence of the particle morphology of ZnO nanostructures on their photocatalytic activity. Under hydrothermal conditions, the Zn(NO3)2∙6 H2O:KOH (Zn:KOH) ratio is changed to 1:2, 1:8, and 1:12 to modulate the morphology of ZnO nanostructures. Particularly, the ZnO nanostructures with a nanostar-like morphology, synthesized at the Zn:KOH ratio of 1:8, exhibit the highest photocatalytic activity in comparison to ZnO nanoparticles and nanorods synthesized at the Zn:KOH ratios of 1:2 and 1:12, respectively. The enhanced photocatalytic activity for the degradation of methylene blue (MB) of ZnO nanostructures with a nanostar-like morphology is due to the presence of a large number of oxygen vacancy-related defects, which are preferably formed on the (1 0 1) facet of ZnO. The results from X-ray diffraction and photoluminescence spectroscopy analyses confirm it. Further, molecular dynamics (MD) simulation is involved to explore the interaction of oxygen atoms (as a representative of hydroxyl radical) with methylene blue molecules to understand the mechanism of enhanced MB degradation at the atomic level. The results of the computational study indicate the formation of hydroxyl radicals and the cleavage and the formation of some bonds in the side and central aromatic rings of MB molecules, which ultimately leads to the degradation of MB. Our findings reveal that it is important to control the morphology and facets of nanostructures for achieving high efficiency in the photocatalytic processes to be applied in practical application.

Role of position specific Ga and N vacancy related defects by ion irradiation in tailoring the ferromagnetic properties of thin GaN films: An experimental and first principle-based study

The variation in ferromagnetism caused by position-specific point defects in GaN (100 nm) thin films is reported here. We observe a systematic variation of magnetic properties in GaN films after 300 KeV Xe+ ion irradiation with different fluences, i.e., 5 × 1012, 5 × 1013, and 5 × 1014 ions-cm−2. Metal Organic Chemical Vapor Deposition (MOCVD) grown Pristine GaN thin film contains Ga vacancies and related defects (as analysed by photoluminescence study) and shows a magnetic moment of ∼ 0.99 emu/g at room temperature. The GaN (002) peak intensity in XRD data decreases with increasing irradiation fluences, confirming that both Ga and N have been removed from their lattice sites and that the content of both Ga and N in irradiated samples has been reduced compared to the as-deposited one. It is evident from the PL data that Ga vacancy-type defects are maximum in pristine samples, after ion beam irradiation the appearance of some new peaks in the photoluminescence data indicates the creation of some new types of defects. The XPS data (Ga 3d and N 1s) also reveals that the intensity of the peak corresponding to Ga bonded with N decreases with higher irradiation doses. This reveals that Ga and N content have been decreased after ion irradiation. The orderly decrease of magnetic moment with increasing ion fluence is possibly due to the isolated Ga vacancies in the pristine film as it has the minimum formation energy and maximum magnetic moment as evident from Density Functional Theory (DFT) results. Therefore, the pristine GaN shows the maximum magnetic moment and, after ion beam irradiation, the creation of Ga vacancies at adjacent sites and other point defects is favourable as pristine GaN already contains Ga vacancies at random sites. DFT results further show that the magnetic moment decreases for other defect configurations rather than the isolated Ga vacancies.

The effect of dopant concentration and annealing treatments on N-type Iodine doped CdTe

We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 1017 cm−3 to 1019 cm−3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100 % donor activation (n ≈ 2 ×1018 cm−3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.

Enhanced photocatalytic activity of methylene blue dye by DIFS synthesized pure and Mn doped MgO nanostructures

A simple Direct Injection Flame Synthesis (DIFS) method is employed to prepare magnesium oxide (MgO) and manganese doped magnesium oxide (Mn:MgO) nanoparticles, and their photocatalytic ability against methylene blue (MB) dye was investigated. The prepared samples are characterized through XRD, Raman spectroscopy, UV-Visible spectroscopy, FESEM, photoluminescence (PL), and EDX analysis. XRD studies reveal that MgO and Mn:MgO nanoparticles contain pure cubical phases and their average crystallite size reduces when Mn is doped with MgO. The characteristics vibrations mode of the synthesized nanoparticles are analyzed from the Raman spectroscopic studies. As per the EDX data, the prepared samples are free from impurities. Pure MgO nanoparticles have irregular, nanocubical and nanoclustered formations, whereas Mn:MgO nanoparticles have crystalline, nanocubical, and nanoflakes structures, according to FESEM analysis. Doping Mn slightly increases the bandgap of the Mn:MgO nanoparticles. UV–visible spectroscopy analysis confirmed a red shift in the wavelength dependent absorbance curve. PL analysis confirms the vacancy and oxygen related defects that are generated due to the doping of Mn with MgO, which enhances the degradation of MB dye. The efficiency of MB degradation by MgO is determined to be 86% and Mn:MgO is about 99%. The analysis of the photocatalytic degradation process revealed that OH- and holes (h+) were crucial for the increased photocatalytic activity of Mn:MgO nanoparticles for MB degradation. The effect of catalyst's initial concentration and the catalysts reusability test were evaluated for five times without significantly losing activity each time. As a result, Mn:MgO is a useful and active catalyst that can be activated effectively using UVA-LEDs to break down and mineralize the wastewater's organics.