Effects of hydrogen doping on the phase structure and optoelectronic properties of p-type transparent SnO

Abstract

Hydrogen (H) is a ubiquitous impurity, which can significantly affect the phase structure and the optoelectronic properties of oxide semiconductors. To date, a well-established understanding of the effects of H doping on the properties of p-type transparent SnO is still lacking. Here, we present a comparative study to reveal the role of H in SnO films by magnetron sputtering. We find that in as-grown undoped SnO films, in addition to the tetragonal SnO phase, secondary phases of SnO2 or Sn3O4 are present under certain growth temperatures. In contrast, a small fraction of metallic Sn phase is included in the as-grown H-doped SnO (SnO:H) films, attributed to the partial reduction of SnO by the H2 in the sputtering gas. Effects of post thermal annealing (PTA) on the properties of SnO films are also explored. Results strongly indicate that H doping or PTA facilitates the formation of Sn phase and Sn vacancies related defects, giving rise to the p-type conductivity observed in the undoped or H-doped SnO films. The present study provides a comprehensive understanding of the evolution of phase structures as well as defect properties of SnO films, which is crucial for their future studies and optoelectronic applications.