This theoretical study investigated the valence-band electronic features in GaAs/GaAsSb/GaAs V-shaped quantum wells. Accordingly, an analytical relation has been extended on the position-dependent effective mass in GaAsSb well region as a function of well geometry. The Finite Element Method and the effective mass approximation have been used to investigate the combined effects due to a non-resonant high-frequency intense laser field and an applied electric field. This study considered the effects of geometric and structural parameters on the laser-dressed confining potential profile, bound states, and the corresponding wave functions. The performed studies have shown that the laser-dressing could convert a V-shaped potential profile to a parabolic-like potential and also a single-well to a double-well. The combined effects of intense laser and electric fields have caused a conversion from a symmetric well to a larger and shallower asymmetric structure. It has been found from the valence-band energy levels that pronounced blueshifts and redshifts were obtained in the electromagnetic energy spectrum with increasing the strength of the intense laser and applied electric fields, respectively. The numerical results have indicated that the electronic properties in valence-band quantum wells were modulated according to the purpose through varying the well half-width and the antimony concentration. Such adjustable valence-band-based features can be beneficial in the design and fabrication of the next generation equipment used in the optoelectronic domain.