Abstract
Intersubband light absorption measurements have been performed on a series of GaAs/AlAs quantum wells with heavy delta doping of Si atoms in the range 9.0×1011–6.5×1012 cm−2. The increase of intersubband transition energy by as much as 38 meV has been observed, and attributed to the deepening of the V-shaped potential by the Si layer and to the depolarization effects.
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