ZnSe single crystal of size ∼25mm lengths and ∼10mm diameter was grown by vertical Bridgman technique using two zone tubular furnace from the synthesized polycrystal of the compound. The powder X-ray diffraction analysis confirmed the crystal system of the grown crystal. The optical band gap of the grown crystal was calculated and found to be ∼2.704eV by UV–vis–NIR analysis. The crystalline perfection was assessed by using high-resolution X-ray diffractometer (HRXRD) and chemical etching studies which reveals that the grown crystal has good crystalline perfection. The etch pit dislocation density was calculated and found to be 2×106cm−2. Good crystalline perfection and less dislocation density of the grown crystals makes, it important for optoelectronic device fabrications. The dielectric studies were also done over a wide range of frequency 100Hz to 10MHz at room temperature.