Urbach Tail Research Articles

Enhanced optoelectronic properties of spray deposited antimony-doped tin oxide thin films

Antimony-doped tin oxide (Sb:SnO2) thin films with varying Sb concentrations were deposited using the spray pyrolysis technique. A comprehensive analysis of the films' elemental, structural, and optoelectronic properties is presented. All films possess a polycrystalline single-phase nature and have a tetragonal rutile structure. As Sb concentration increases, the unit cell shrinks continuously, suggesting proper substitution of Sn4+ by Sb5+. This substitution causes a continuous increase in the concentration of charge carriers and a reduction in electron mobility. X-ray photoelectron spectroscopy investigations revealed the presence of asymmetric Sn 3d core-level peaks distinguished by peak splitting, which increases with increasing carrier concentration. Utilizing the plasmon absorption model, an effective mass value of (0.51 ± 0.07)me for the conduction electron at the fermi level is obtained. With increasing Sb concentration, the optical energy gap increases gradually from 3.84 eV for undoped SnO2 to 4.35 eV for 5.0 at. % Sb. After considering the Urbach tailing phenomenon as well as the Moss–Burstein effect, this increase was attributed to the increase in Moss–Burstein energy due to increased charge carrier concentration. Our study revealed that the film doped with 2.0 at. % Sb has the best optoelectronic properties, with a figure of merit of 4.18 (Ω/cm2)−1.

Effect of Deposition Temperature on Zn Interstitials and Oxygen Vacancies in RF-Sputtered ZnO Thin Films and Thin Film-Transistors

ZnO thin films were deposited using RF sputtering by varying the argon:oxygen gas flow rates and substrate temperatures. Structural, optical and electrical characterization of ZnO thin films were systematically carried out using X-Ray diffraction (XRD), scanning electron microscopy (SEM), UV–visible spectroscopy, X-Ray photoelectron spectroscopy (XPS) and Hall measurements. Film deposited at room temperature and annealed at 300 °C exhibited low O2 incorporation with localized defects and a high percentage of Zn interstitials. A large crystalline size and fewer grain boundaries resulted in a high Hall mobility of 46.09 cm2/V-s Deposition at higher substrate temperatures resulted in improvement in O2 incorporation through the annihilation of localized defects and decrease in oxygen vacancies and Zn interstitials. Urbach tails within the bandgap were identified using the absorption spectrum and compared with the % defects from XPS. Bottom-gate thin-film transistors were subsequently fabricated on a SiO2/p-Si substrate using the combination of RF sputtering, wet etching and photolithography. Variation in the substrate temperature showed performance enhancement in terms of the leakage current, threshold voltage, sub-threshold swing and ION/IOFF ratio. Thin-film transistor (TFT) devices deposited at 300 °C resulted in an O2-rich surface through chemisorption, which led to a reduction in the leakage current of up to 10−12 A and a 10-fold reduction in the sub-threshold swing (SS) from 30 V to 2.8 V. Further TFT optimization was carried out by reducing the ZnO thickness to 50 nm, which resulted in a field-effect mobility of 1.1 cm2/V-s and ION/IOFF ratio of 105.

Urbach tails in indium arsenide studied using nonequilibrium Green’s functions

Urbach tails in indium arsenide studied using nonequilibrium Green’s functions

Characterization and linear / nonlinear optical aspects of polyaniline (PANI) films incorporated with Ethylenediamine for low-cost limiting optical technologies

Polymer composite combined film with Polyaniline (PANI) and Ethylenediamine (EDA) were successfully synthesized via the spin coating technique on a glass substrate followed by different thermal annealing degrees and times. Successful incorporation of EDA into the PANI polymer matrix and the effect of the annealing temperature have been demonstrated by XRD, FTIR, FESEM and TEM. Using UV–Vis optical spectroscopy, we determine the absorption coefficient, band edge, and Urbach energy. The effects of different annealing temperatures and times on linear/nonlinear optical characteristics were investigated. The band gap of EDA-doped PANI films is reduced with the different thermal annealing from 3.43 eV to 3.19 eV, while the Urbach tail of the 100 °C/4h film which is 0.492 eV was decreased to 0.469 eV for 150 °C/1h sample. However, the absorbance and optical conductivity were both increased. Besides, the optical limiting effect assesses their potential to mitigate intense light. It was found from the study that for green wavelength 100 °C/4h film decreases the input power by 16.5 % whereas the 150 °C/1h sample shows superior limiting behavior of 99.96 %. It has been found that thermal annealing of the EDA-doped PANI films enhances the synthetic composite's optical characteristics, making the 150 °C/1h sample of EDA-doped PANI films appropriate for utilization in both energy applications and optoelectronics.

Chromium nano-segregation and intermediate band formation in heavily-doped ZnS:Cr films

X-ray absorption spectroscopy, X-ray diffraction, and UV–Vis spectroscopy were employed to investigate heavily-doped ZnS:Cr films prepared by RF magnetron co-sputtering. EDS indicates ca. 5 at. % Cr incorporation as well as slight S-deficiency. XAS in the Zn K- and Cr K-edges revealed Zn-by-Cr substitution and segregation of Cr nanoclusters which lead to significant lattice distortion. XRD indicates a 44 % increase in the strain, an increase in the lattice parameter, and a decrease in the crystallite size upon Cr incorporation. The presence of Cr nanoclusters contributed to changes in the band gap, a large Urbach tail parameter of 565 meV, and the formation of an intermediate band arising from the Cr 3d spin-up states. The results suggest ZnS:Cr films in the heavily doping regime could lead to applications in photovoltaics and spintronics.

INFLUENCE OF CuO NANOPARTICLES ON THE STRUCTURAL PROPERTIES, SURFACE CHARACTERISTICS, AND OPTICAL BEHAVIOR OF POLY(4-CHLOROANILINE) POLYMERIC FILMS

In this study, the composite P(4ClAni)/CuO, which consists of Poly(4-Chloroaniline) P(4ClAni) and copper oxide (CuO) nanoparticles, was successfully synthesized utilizing a chemically oxidative polymerization approach to be applied in optoelectronics. Both FTIR and EDX analyses showed that CuO has been successfully integrated into the P(4ClAni) matrix. The SEM micrographs reveal uniform loading and distribution of CuO throughout the P(4ClAni) polymeric chains. The UV–Vis absorbance, the Urbach energy, the band edge and a number of carbon clusters were determined. The Tauc relationship was used to determine the band gaps, which revealed a decrease as the CuO concentration increased. The band gap drops from 3.84[Formula: see text]eV for P(4ClAni) to 3.09, 2.85, and 2.64[Formula: see text]eV, correspondingly for P(4ClAni)/CuO-1, P(4ClAni)/CuO-2, and P(4ClAni)/CuO-3. While, the Urbach tail is increased from 1.66[Formula: see text]eV for P(4ClAni) correspondingly to 1.81, 1.85, and 1.93[Formula: see text]eV. The results show composites made of P(4ClAni)/CuO have better optical characteristics than pure polymer P(4ClAni), suggesting that they can use these composites in optoelectronics devices.

High Broadband Optical Absorption and Bandstop Filter Characteristics of Pb/Nb2O5 Interfaces

AbstractIn this study, semitransparent lead films serve as substrates for depositing niobium pentoxide thin films, forming versatile electro‐optical devices. Using vacuum evaporation and ion sputtering techniques at ≈10−5 mbar, stacked layers of crystalline Pb and amorphous Nb2O5 are created. This process reduces free carrier absorption in Nb2O5 and forms Urbach tail states with a width of 0.91 eV. Pb/Nb2O5 thin films exhibit remarkable broadband absorption, exceeding 440% in the visible and 98% in the infrared. Moreover, Pb substrates induce a redshift in Nb2O5’s energy bandgap. Electrical analysis using impedance spectroscopy on Pb/Nb2O5/Ag structures reveals their series/parallel resonance and bandstop filter properties. Notably, the bandstop filters exhibit reflection coefficient minima at a notch frequency of 1.66 GHz, with a bandwidth of 280 MHz, return loss of 26 dB, and voltage standing wave ratio of 1.13. These findings underscore the device's potential for wide‐ranging electro‐optical applications across the electromagnetic spectrum.

The role of Bi incorporation on the optical dispersion parameters of binary Se–In chalcogenide glass films as encouraging materials for photovoltaic implementations

The bulk form of Se78In(22-x)Bix (x = 0, 4, 8, and 12 at.%) was produced with melt-quench technology. Subsequently, thin films of these compositions were produced through the thermal evaporation method under vacuum conditions. Analysis via diffraction of X-rays confirmed the disordered character of the resulting films. The refractive index (n) and extinction coefficient (k) were computed using optical transmission T(λ) and reflection R(λ) data. Analysis of optical constants revealed that the optical energy gap Egopt decreases while the Urbach tail Eu augments as the Bi content increases. Other related constants were determined and investigated in relation to variations in Bi content. The outcomes of our study were compared with those published previously. Non-linear parameters were calculated and discussed for the investigated films.

“Green” Aqueous Synthesis, Structural, and Optical Properties of Quaternary Cu2ZnSnS4 and Cu2NiSnS4 Nanocrystals

Element substitution in Cu2ZnSnS4‐like chalcogenides offers the potential to create alternative low‐cost photovoltaic and thermoelectric materials with tunable properties. In this work, the “green” synthesis of colloidal cation‐substituted Cu–Ni–Sn–S nanocrystals (CNTS NCs) in aqueous solutions using thioglycolic acid as a stabilizer is reported for the first time. The structural and optical properties of CNTS NCs are studied in colloidal solutions and thin films, and are compared with those of Cu–Zn–Sn–S (CZTS) NCs obtained under similar conditions. The NC sizes of both compounds are estimated to be in the range of 1.5–2.5 nm. Both NCs exhibit strongly non‐stoichiometric composition and a structure corresponding to cationically disordered kesterite Cu2ZnSnS4, which are common features of such quaternary metal‐based chalcogenides. The phonon Raman spectra of CNTS and CZTS NCs exhibit very similar lineshapes, but the CNTS phonon band has a larger width and lower frequency, presumably due to stronger cation disorder. The absorption of both types of NCs extends continuously through the visible range with an estimated bandgap of ≈2.2 eV and sub‐bandgap absorption due to an Urbach tail. The absorption coefficient of CNTS is determined to be α > 102 cm−1 at 700 nm and α > 104 cm−1 at 400 nm.

Shedding light on evolution of Raman line shape with probing laser power: Light-induced perturbation in electron-phonon coupling.

The laser power mediated changes in the Raman line shape have been considered in terms of interference between discrete phonon states ρ and the electronic continuum states ϰ contributed by Urbach tail states. The laser-induced effects are treated in terms of the increase in the surface temperature and thereby the scaling of electronic disorder, i.e., Urbach energy, which can further contribute to the electron-phonon interactions. Therefore, the visualization of this effect is attempted analytically as a perturbation term in the Hamiltonian, which clearly accounts for the observed changes with laser power. This has been investigated based on the experimental results of laser power dependent Raman spectra of bulk EuFeO3 and silicon nanowires, which are found to provide convincing interpretations.

Quantification of the strong, phonon-induced Urbach tails in β-Ga2O3 and their implications on electrical breakdown

In ultrawide bandgap (UWBG) nitride and oxide semiconductors, increased bandgap (Eg) correlates with greater ionicity and strong electron–phonon coupling. This limits mobility through phonon scattering, localizes carriers via polarons and self-trapping, broadens optical transitions via dynamic disorder, and modifies the breakdown field. Herein, we use polarized optical transmission spectroscopy from 77 to 633 K to investigate the Urbach energy (Eu) for many orientations of Fe- and Sn-doped β-Ga2O3 bulk crystals. We find Eu values ranging from 60 to 140 meV at 293 K and that static (structural defects plus zero-point phonons) disorder contributes more to Eu than dynamic (finite temperature phonon-induced) disorder. This is evidenced by lack of systematic Eu anisotropy, and Eu correlating more with x-ray diffraction rocking-curve broadening than with Sn-doping. The lowest measured Eu are ∼10× larger than for traditional semiconductors, pointing out that band tail effects need to be carefully considered in these materials for high field electronics. We demonstrate that, because optical transmission through thick samples is sensitive to sub-gap absorption, the commonly used Tauc extraction of a bandgap from transmission through Ga2O3 >1–3 μm thick is subject to errors. Combining our Eu(T) from Fe-doped samples with Eg(T) from ellipsometry, we extract a measure of an effective electron–phonon coupling that increases in weighted second order deformation potential with temperature and a larger value for E||b than E||c. The large electron–phonon coupling in β-Ga2O3 suggests that theories of electrical breakdown for traditional semiconductors need expansion to account not just for lower scattering time but also for impact ionization thresholds fluctuating in both time and space.

Synthesis and study of the impact of calcination duration on the properties of Al4(ZnO)96 nanoparticles

Aluminium doped zinc oxide (Al4(ZnO)96) nanoparticles were synthesized using new sogel method at 40 °C, with zinc acetate dihydrate (Zn(CH3COO)2·2 H2O) and aluminium nitrate nonahydrate (Al(NO3)3·9 H2O) as precursors. The samples underwent analysis using various structural and optical techniques to investigate the effect of calcination duration on the properties. Prolonged calcination durations led to a significant reduction of oxygen at the grain boundaries, influencing particle size and crystallization. According to TEM-histogram analysis, the most probable size for 28.5 % of nanoparticles fell within the range of 15–20 nm, which aligns closely with the estimated particle size determined by XRD analysis. The material displayed a significant direct bandgap of approximately 3.283 eV, which increased with the duration of calcination. The band gap was affected by changes in phase, strain, and particle size, attributed to the presence of defect states and a substantial concentration of localized states. Additionally, the material exhibited excellent chemical stability and a significantly high binding energy. Moreover, the optical bandgap widened as the width of the Urbach tails in the localized states decreased with an increase in the duration of calcination.

Anion and Cation Co-Doping of NiO for Transparent Photovoltaics and Smart Window Applications

Materials engineering based on metal oxides for manipulating the solar spectrum and producing solar energy have been under intense investigation over the last years. In this work, we present NiO thin films double doped with niobium (Nb) and nitrogen (N) as cation and anion dopants (NiO:(Nb,N)) to be used as p-type layers in all oxide transparent solar cells. The films were grown by sputtering a composite Ni-Nb target on room-temperature substrates in plasma containing 50% Ar, 25% O2, and 25% N2gases. The existence of Nb and N dopants in the NiO structure was confirmed by the Energy Dispersive X-Ray and X-Ray Photoelectron Spectroscopy techniques. The nominally undoped NiO film, which was deposited by sputtering a Ni target and used as the reference film, was oxygen-rich, single-phase cubic NiO, having a visible transmittance of less than 20%. Upon double doping with Nb and N the visible transmittance of NiO:(Nb,N) film increased to 60%, which was further improved after thermal treatment to around 85%. The respective values of the direct band gap in the undoped and double-doped films were 3.28 eV and 3.73 eV just after deposition, and 3.67 eV and 3.76 eV after thermal treatment. The changes in the properties of the films such as structural disorder, direct and indirect energy band gaps, Urbach tail states, and resistivity were correlated with the incorporation of Nb and N in their structure. The thermally treated NiO:(Nb,N) film was used to form a diode with a spin-coated two-layer, mesoporous on top of a compact, TiO2 film. The NiO:(Nb,N)/TiO2heterojunction exhibited visible transparency of around 80%, showed rectifying characteristics and the diode’s parameters were deduced using the I-V method. The diode revealed photovoltaic behavior upon illumination with UV light exhibiting a short circuit current density of 0.2 mA/cm2 and open-circuit voltage of 500 mV. Improvements of the output characteristics of the NiO:(Nb,N)/TiO2 UV-photovoltaic by proper engineering of the individual layers and device processing procedures are addressed. Transparent NiO:(Nb,N) films can be potential candidates in all-oxide ultraviolet photovoltaics for tandem solar cells, smart windows, and other optoelectronic devices.

Grain boundaries are not the source of Urbach tails in Cu(In,Ga)Se2 absorbers

The presence of Urbach tails in Cu(In,Ga)Se2 (CIGSe) absorbers has been identified as a limiting factor for the performance of the CIGSe solar cells. The tail states contribute to both radiative and non-radiative recombination processes, ultimately leading to a reduction in the open-circuit voltage and, consequently, decreasing the overall efficiency of CIGSe devices. Urbach tails result from structural and thermal disorders. The Urbach tails can be characterized by the Urbach energy, which is associated with the magnitude of the tail states. Within polycrystalline CIGSe absorbers, grain boundaries can be considered as structural disorder and, therefore, can potentially contribute to the Urbach tails. In fact, it has been proposed that the band bending at grain boundaries contribute significantly to the tail states. This study focuses on examining the correlation between Urbach tails and the band bending at the grain boundaries. The Urbach energies of the CIGSe samples are extracted from photoluminescence (PL) measurements, which reveal that the introduction of Sodium (Na) into the material can lead to a reduction in the Urbach energy, and an even further decrease can be achieved through the RbF post-deposition treatment. The band bending at the grain boundaries is investigated by Kelvin probe force microscopy measurements. A thorough statistical analysis of more than 340 grain boundaries does not show any correlation between Urbach tails and grain boundaries. We measure small band bending values at the grain boundaries, in the range of the thermal energy (26 meV at room temperature). Furthermore, our intensity dependent PL measurements indicate that Urbach tails are, at least in part, a result of electrostatic potential fluctuations. This supports the model that the introduction of alkali elements mainly decreases the magnitude of electrostatic potential fluctuations, resulting in a subsequent reduction in the Urbach energy.

Interplay between the heat treatment and structural and optical properties of Nb2O5 thin films

Thin films of Nb2O5 were synthesized by RF sputtering. The effect of annealing, at different temperatures (100, 150, 200, 250, 300, 350, and 400 °C), on the structural and optical properties was studied. The crystallinity and structural characteristics of the Nb2O5 thin films were examined employing the X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD and SEM analyses showed an amorphous nature for the as-deposited and annealed samples from 100 to 350 °C and crystalline structure for the annealed sample at 400 °C. The high values of the transmittance and low reflection make these films used as a window layer in solar cell systems. Upon increasing annealing temperature, the energy band gap Eg increased from 4.039 to 4.175 eV. Eg high values again make these films suitable to be used as a window layer in solar cell system. Urbach tail, EU, decreased with increasing annealing temperature. The refractive index showed the normal dispersion. The dispersion energies were found to have the same behavior with respect to annealing temperature, besides, the single oscillator energy Eₒ had a lower value compared to the dispersion energy Ed. The plasma frequency ωp\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\omega }_{p}$$\\end{document} was found to increase with annealing temperature. The first and third optical moments had peak values depending on the incident photon energy.

Influence of argon irradiations on modifying the surface properties and optical behavior of polymer composite films

ABSTRACT The composites PVA/CuO, which is made of copper oxide nanoparticles (CuONP) and polyvinyl alcohol (PVA) are created by the solution casting production process. The surface properties of the PVA/CuO composite were then altered using a cold cathode ion source for using these samples in optical devices. The PVA/CuO samples were exposed to argon fluencies of 3 × 1017, 6 × 1017, and 9 × 1017 ions.cm−2. By raising the fluence from 3 × 1017 to 9 × 1017 ions.cm−2, the contact angle is reduced from to 48.43° to 32.52°, while the work of adhesion increased from 119.93 mJ/m to a 132.86 mJ/m. Using the Wemple and Di-Domenico approach, the optical characteristics were computed. The absorption edge is reduced from 2.71 eV for PVA/CuO to 2.56, 1.99, and 1.82 eV, for the samples as exposed to 3 × 1017, 6 × 1017, and 9 × 1017 ions.cm−2 respectively. And the Urbach tail changed from 1.3 eV for the pure film to 1.6, 1.66, and 4.23 eV, and the bandgaps decrease from 3.67 eV to 3.56 eV, 3.48 eV, and 3.32 eV. The obtained results shows the irradiated PVA/CuO films are more applicable for use in optical devices.

Effect of Li2O on dielectric, structural and optical properties of yttrium borosilicate glasses

Composition 55SiO2-30B2O3-(x)Li2O-(15-x)Y2O3 (x = 00, 05, 10, 15) are synthesized using melt-quench technique at higher temperature (1550 °C). As-synthesized samples are sintered to form the crystalline phases at different temperature range, i.e., 800 °C and 850 °C. The density (2.40–1.57 g/cc) and molecular weight (87.79–58.40 g/mol) of samples are decreased with increasing Li2O content. The crystallinity of heat-treated glasses was confirmed by using XRD technique. As the concentration of Y2O3 is replaced by Li2O, the optical bandgap (3.79–3.41 eV) and urbach tail (0.31–0.28 eV) are decreased, while, refractive index (n) is showing increasing trend (2.33–2.42). The dielectric constant of YL- samples lies from (22–55) with losses (2–18) at room temperature. The activation energy is decreased due to conduction phenomena occurred in glass-matrix. In this research, results claimed that the prepared glass-ceramics can be applied in optoelectronics application.

Excited-State Dynamics of MAPbBr3: Coexistence of Excitons and Free Charge Carriers at Ultrafast Times.

Methylammonium lead tribromide perovskite (MAPbBr3) is an important material, for example, for light-emitting applications and tandem solar cells. The relevant photophysical properties are governed by a plethora of phenomena resulting from the complex and relatively poorly understood interplay of excitons and free charge carriers in the excited state. In this study, we combine transient spectroscopies in the visible and terahertz range to investigate the presence and evolution of excitons and free charge carriers at ultrafast times upon excitation at various photon energies and densities. For above- and resonant band-gap excitation, we find that free charges and excitons coexist and that both are mainly promptly generated within our 50-100 fs experimental time resolution. However, the exciton-to-free charge ratio increases upon decreasing the phonon energy toward resonant band gap excitation. The free charge signatures dominate the transient absorption response for above-band-gap excitation and low excitation densities, masking the excitonic features. With resonant band gap excitation and low excitation densities, we find that although the exciton density increases, free charges remain. We show evidence that the excitons localize into shallow trap and/or Urbach tail states to form localized excitons (within tens of picoseconds) that subsequently get detrapped. Using high excitation densities, we demonstrate that many-body interactions become pronounced and effects such as the Moss-Burstein shift, band gap renormalization, excitonic repulsion, and the formation of Mahan excitons are evident. The coexistence of excitons and free charges that we demonstrate here for photoexcited MAPbBr3 at ultrafast time scales confirms the high potential of the material for both light-emitting diode and tandem solar cell applications.

High‐Efficiency Single‐Photon Upconversion Photoluminescence of Perovskite Quantum Dots via Intragap State Regulation

AbstractLead halide perovskite quantum dots (PQDs) have shown remarkable single‐photon upconversion photoluminescence (SPUC‐PL) bringing them a brilliant perspective as the active media for biological imaging, optiag, and upconversion photovoltaics. However, the mechanism of SPUC in PQDs is still in dispute, and the specific strategy for optimizing PQDs toward a higher SPUC performance has yet to be established, which impedes the application of PQDs‐based SPUC‐PL in practice. In this work it is revealed that the PL quantum yield is declined by surface trap states, while the SPUC efficiency is promoted by Urbach tail states. These two types of intragap states can be chemically manipulated by engineering the surface ligand and the growth kinetics of perovskite nanocrystals, bringing on the improvement of light emission efficiency and the promotion of subgap low‐energy photon absorption, respectively. As a proof of concept, utilizing the synergistic effect of the proposed chemical manipulation method, the SPUC‐PL efficiency of PQDs is boosted by more than 40%, which gives rise to a spectral window of optical refrigeration gain as broad as ≈130 meV.

Enhancing the performance of optoelectronic potential of CuO/Al nanoplats in a PVC for medium voltage cables applications

This study investigates the potential of incorporating CuO and Al nanoplates into a polyvinyl chloride (PVC) matrix to enhance the performance of medium voltage cables. The incorporation of nanoparticles into the PVC insulation material aims to improve the electrical, dielectric, and optical properties of the cable. The nanocomposite films were synthesized by dissolving PVC in tetrahydrofuran (THF) solvent and adding a mixture of 5 wt% CuO and Al nanoparticles. Fourier-transform infrared spectroscopy (FTIR) analysis confirmed the successful incorporation of the nanoparticles into the PVC matrix. The optical properties of the PVC/AlNPs and PVC/CuONPs + AlNPs nanocomposite films were characterized, revealing a decrease in band gap energy (4.35 eV) and Urbach tail energy (0.3702 eV) for the PVC/CuONPs + AlNPs film compared to the PVC/AlNPs film (4.5 eV and 0.41816 eV, respectively). Additionally, the PVC/CuONPs + AlNPs film exhibited higher absorption coefficients and increased electron delocalization and conjugation (carbon cluster value of 62.53). The dielectric properties of the CuONPs + AlNPs nanocomposites were investigated, with the sample containing 1.5% AlNPs demonstrating the highest AC conductivity (2.029 × 10−3 S/m), dielectric constant, and dielectric loss across the frequency range. Simulations of electric field distribution revealed that the PVC/CuONPs+1.5% AlNPs nanocomposite cable exhibited a more uniform electric field distribution compared to the PVC market cable, contributing to a reduction in electrostatic tension and a relative permittivity increase from 2.25 to 2.35. The electric potential distribution along the cable radius remained similar for both cable samples. These findings demonstrate the potential of nanocomposite insulation materials in enhancing the performance of medium voltage cables, paving the way for improved reliability, longevity, and efficiency.