Abstract
X-ray absorption spectroscopy, X-ray diffraction, and UV–Vis spectroscopy were employed to investigate heavily-doped ZnS:Cr films prepared by RF magnetron co-sputtering. EDS indicates ca. 5 at. % Cr incorporation as well as slight S-deficiency. XAS in the Zn K- and Cr K-edges revealed Zn-by-Cr substitution and segregation of Cr nanoclusters which lead to significant lattice distortion. XRD indicates a 44 % increase in the strain, an increase in the lattice parameter, and a decrease in the crystallite size upon Cr incorporation. The presence of Cr nanoclusters contributed to changes in the band gap, a large Urbach tail parameter of 565 meV, and the formation of an intermediate band arising from the Cr 3d spin-up states. The results suggest ZnS:Cr films in the heavily doping regime could lead to applications in photovoltaics and spintronics.
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