We investigated three pathways of energy transfer between Ni2+ sensitizers and Er3+ emitters in broadband-sensitive La(Ga0.5Sc0.5)O3:Er,Ni,Nb upconverters emitting at 0.98µm for crystalline silicon solar cells. The results were interpreted based on simplified models of the emission mechanisms. A high efficiency close to unity was successfully achieved for the Ni2+→Er3+ (4I13/2) energy transfer, meaning efficient sensitization. Energy dissipation caused by the Er3+ (4I13/2)→Ni2+ back transfer was minor. However, detrimental impact of another back transfer from the initial state of the upconversion emission Er3+ (4I11/2) competed against improvements in the absorbance and energy transfer upconversion with increasing Ni2+ and Er3+ concentrations, which limited the upconversion efficiency. Precise tuning of the Ni2+ absorption band to suppress the second back transfer can improve the upconversion performance.
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