Up-conversion Gain Research Articles

Observation of Frequency Up-Conversion Gain in SIS Junctions at W Band

We have developed a test setup to measure frequency up-conversion gain in superconductor–insulator–superconductor (SIS) junctions at W band (75–110 GHz). A conventional SIS mixer with Nb/AlOx/Nb tunnel junctions was used as a frequency up-converter. An up-converted signal is measured by a room-temperature down-converter system. We observed distinct intermediate frequency responses to signal inputs from a continuous microwave source. The measured single-sideband up-conversion gain in SIS junctions was clearly positive (> 0 dB) with input frequency less than 2 GHz, which was well-calibrated by using an input from the continuous-wave source.

Upconverted excitonic photoluminescence from a two-dimensional lead-halide perovskite.

Anti-Stokes photoluminescence (AS-PL) is an interesting optical phenomenon that can cause laser cooling in certain semiconductors where incident laser photons are efficiently converted into photons with higher energy. The underlying upconversion mechanism can be used to realize optical refrigerators, but suited materials need to be developed for actual applications. Here, we investigate the AS-PL properties of a two-dimensional (2D) perovskite PEA2PbI4 single crystal and compare them with those of a three-dimensional (3D) perovskite MAPbI3 single crystal. We find that, in the 2D perovskite PEA2PbI4, which has a large exciton binding energy, the free-exciton PL is dominant and that the measured upconversion gain spectra of both PEA2PbI4 and MAPbI3 crystals are similar. The AS-PL process in these perovskite single crystals is discussed.

Up-converted photoluminescence from CH3NH3PbI3 perovskite semiconductors: Implications for laser cooling

Although optical refrigeration---``laser cooling''---is an interesting physical phenomenon, its practical implementation in solid-state devices is still difficult due to material limitations. Here, the authors investigate the up-converted photoluminescence (anti-Stokes photoluminescence) from optically thin films and thick crystals of CH${}_{3}$NH${}_{3}$PbI${}_{3}$ perovskite. They discuss the competition between the anti-Stokes photoluminescence and the photon reabsorption, and demonstrate that as a result of the high luminescence efficiency, up-conversion gain can occur even in optically thick CH${}_{3}$NH${}_{3}$PbI${}_{3}$ single crystals. The optimal excitation energy for the maximum up-conversion gain in perovskites was determined experimentally. These important physical insights lay the foundations for the perovskite-based devices for optical refrigeration.

A High Conversion Gain 210-GHz InP DHBT Sub-Harmonic Mixer Using Gain-Enhanced Structure

In this paper, we present a novel gain-enhanced sub-harmonic mixer based on 0.5-μm emitter width InGaAs/InP double heterojunction bipolar transistors (InP DHBTs). The proposed mixer consists of a transconductance stage and a gain-enhanced stage. A common-emitter transistor is used in the first stage to realize the sub-harmonic mixing while another common-emitter transistor is used in the second stage to remix the f LO+IF and fIF and also amplify the f 2LO+IF . For further verification, a transconductance mixer and a gain-enhanced mixer were designed and fabricated. Compared with the transconductance mixer, the gain-enhanced mixer exhibits a 6.8-dB higher conversion gain with 2-dB lower LO input power and a peak up-conversion gain of 9 dB at 213 GHz with f IF = 1 GHz, f LO = 106 GHz, and P IF = -26 dBm P LO = 3 dBm. To our best knowledge, the gain-enhanced mixing structure is proposed for the first time.

Investigation of SIS Up-Converters for Use in Multi-pixel Receivers

We propose the use of SIS junctions as a frequency up-converter based on quasiparticle mixing in frequency division multiplexing circuits for multi-pixel heterodyne receivers. Our theoretical calculation showed that SIS junctions have the potential to achieve positive gain and low-noise characteristics in the frequency up-conversion process at local oscillator (LO) frequencies larger than the voltage scale of the dc nonlinearity of the SIS junction. We experimentally observed up-conversion gain in a mixer with four-series Nb-based SIS junctions at the LO frequency of 105 GHz for the first time.

LTCC-based monolithic system-in-package (SiP) module for millimeter-wave applications

A miniature LTCC system-in-package (SiP) module has been presented for millimeter-wave applications. A typical heterodyne 61 GHz transmitter (Tx) has been designed and fabricated in a type of the SiP module as small as 36 × 12 × 0.9 mm3. Five active chips including a mixer, driver amplifier, power amplifier, and two frequency multipliers were mounted on the single LTCC package substrate, in which all passive circuits such as a stripline (SL) BPF, 2 × 2 array patch antenna, surface-mount technology (SMT) pads, and intermediate frequency (IF) feeding lines have been monolithically embedded by using vertical and planar transitions. The embedded SL BPF shows the center frequency of 60.8 GHz, BW of 4.1%, and insertion loss of 3.74 dB. The gain and 3-dB beam width of the fabricated 2 × 2 array patch antenna are 7 dBi and 36 degrees, respectively. The assembled LTCC 61 GHz Tx SiP module achieves an output power of 10.2 dBm and an up-conversion gain of 7.3 dB. Because of the integrated BPF, an isolation level between a local oscillation (LO) and RF signal is below 26.4 dBc and the spurious level is suppressed by lower than 22.4 dBc. By using a 61 GHz receiver (Rx) consisting of off-the-shelf modules, wireless communication test was demonstrated by comparing measured IF spectrums at the Tx and Rx part.

Interview

Professor Junghwan Kim from Sejong University in Korea talks about the research behind his Letter ‘High up-conversion gain optoelectronic mixer using uni-travelling carrier phototransistors’ page 583.

High upconversion gain optoelectronic mixer using uni-travelling carrier phototransistors

The optoelectronic mixing performance of a uni-travelling carrier heterojunction phototransistor (UTC-HPT) was compared with its performance as a photodiode (PD). The upconverted output power in HPT mode was 24 dBm higher than in PD mode.

A homodyne transceiver MMIC using SiGe:C technology for 60 GHz wireless applications

A highly integrated transceiver microwave monolithic integrated circuit (MMIC) manufactured in a 200-GHz SiGe:C production technology is presented, applicable for sensing- and broadband communication applications. To simplify the analog frontend, the fully differential design is based on a homodyne architecture. It comprises an LO signal generation unit based on a wideband 60 GHz fundamental Voltage Controlled Oscillator (VCO) and an on-chip prescaler, covering the full operational frequency band of 57–64 GHz. Within this bandwidth, the upconverter exhibits an upconversion gain of 23.6–26.4 dB and a maximum output-referred 1-dB compression point of 14 dBm. The downconverter provides a Double Sideband (DSB) noise figure of 9–12 dB with a downconversion gain of 37–71 dB. On chip AC-coupling of the receiver IF-output with a lower −3 dB cut-off frequency as low as 16 kHz eliminates mixer DC-offsets and enables on-chip Intermediate Frequency (IF) amplification. The whole transceiver MMIC draws a current of 415 mA from a single 3.3 V supply and requires few components externally to the chip.

A CMOS voltage controlled oscillator topology for suppression of flicker noise up-conversion

A CMOS voltage controlled oscillator (VCO) topology is proposed to suppress the flicker noise up-conversion, thus improving its close-in phase noise performance. The idea is based on a previous work relying on insertion of resistors in series with the conducting channel resistors of the complementary cross coupled pairs. The immunity of the loaded quality factor (Q) to the conducting channel resistors which are modulated by their flicker noise is enhanced, thus reducing the flicker noise up-conversion gain. In the proposed topology, the VCO oscillation amplitude is not degraded and the resistance is never constrained by the threshold voltage, which are problems of the previous topology. Meanwhile the number of resistors is halved, lowering circuit complexity. Two VCOs based on the previous topology and the proposed topology are designed in a 65nm CMOS process. Simulation results show the phase noise of the proposed VCO is improved by more than 4dB at 1kHz offset frequency and 2dB at 10kHz offset frequency over the whole 2.85GHz to 3.75GHz tuning range.

A 55–64 GHz Fully-Integrated Sub-Harmonic Wideband Transceiver in 130 nm CMOS Process

In this letter, a 55-64 GHz compact fully-integrated gigabit transceiver with sub-harmonic pump technique is presented. The transceiver consists of a single-pole-double-throw (SPDT) traveling wave switch, a low-noise amplifier (LNA), a buffer amplifier (BA), and two sub-harmonic resistive mixers for up-conversion and down-conversion, respectively. The transceiver using 130 nm standard CMOS technology achieves an up-conversion gain of 7.4 dB at 62 GHz and down-conversion gain of 7.2 dB at 60 GHz with a compact chip size of 1.2 mm2. The 3 dB frequency bandwidth ranges from 55 to 64 GHz, which can cover the whole frequency band for 802.15.TG3C WPAN applications. For system applications, gigabit BPSK modulation signal test is successfully performed in this work.

A 5-GHz Subharmonic Injection-Locked Oscillator and Self-Oscillating Mixer

This paper presents a multifunctional circuit realizing the functions of oscillation, mixing, amplification, and frequency multiplication at 5 GHz. A theoretical and experimental description of the circuit is given. The proposed circuit, which combines both the injection-locking and mixing processes, uses only one port where both the RF/intermediate frequency signal and the injection signal (IS) are applied. The IS, which is used to stabilize the oscillation, is at a subharmonic of the oscillation frequency (omegaosc/4) having a power level as low as -50 dBm. Calculations of the phase noise and measurements of the mixing properties are reported which indicate a noise improvement, and a high up-conversion gain. The implementation of the circuit exhibits an up-conversion gain of 14 dB, a phase noise of -110 dBc/Hz at 100-kHz offset, a dB of -15 dBm, a third-order intercept point of -2 dBm, and a power consumption of 35 mW. Calculated and measured results are in good agreement for all cases, emphasizing the relevance of the proposed circuit.

Dual‐gate AlGaN/GaN high‐electron‐mobility transistors with short gate length for high‐power mixers

We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured the DC and up-conversion RF characteristics. A device with a T-shaped gate (0.15 µm × 300 µm) exhibits a maximum transconductance of 40 mS, an on-state breakdown voltage of over 30 V, and off-state breakdown voltage of 86 V. The maximum RF output power (PRFout) is 17 dBm, and the up-conversion gain is 7.5 dB at a frequency of 10 GHz when the bias point voltage is 30 V. As the local frequency increases from 2 to 10 GHz, PRFout and the gain decrease by only 2 and 2.6 dB, respectively. Shortening the gate was found to be effective in improving the frequency characteristics of a mixer at frequencies up to and including the X-band. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

AlGaN/GaN dual‐gate high electron mobility transistors on SiC substrates for high‐power mixers

We have demonstrated dual-gate AlGaN/GaN high-electron-mobility transistors on SiC substrates for high-power mixers and examined DC and up-conversion RF measurements with drain-source bias voltages (VDS) to analyze the possible output level. The 0.7 × 300 µm-gate device exhibited the maximum transconductance of 47 mS, maximum RF power of 19.6 dBm and up-conversion gain of 11 dB at 2 GHz when VDS = 15 V. For VDS of over 15 V, the devices occasionally broke down, because, although the device can handle more drain current, but the voltage swing reached the breakdown voltage of about 30 V. These results indicate that a Watt-class output mixer can be easily achieved with this simple dual-gate structure. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

A 2.5-GHz InGaP/GaAs differential cross-coupled self-oscillating mixer (SOM) IC

This letter presents a monolithic differential cross-coupled self-oscillating mixer (SOM). The SOM chip is fabricated using an InGaP/GaAs heterojunction bipolar transistor (HBT) foundry process and operates at 2.5 GHz. The chip provides voltage controlled oscillator (VCO) operation, up- and down-conversion mixing, and injection locking functionalities. The voltage down-conversion gain and the power up-conversion gain of up to 15 and 11.5 dB, respectively, are measured for the circuit. There is a compromise between obtaining a high conversion gain, and the oscillator power (-0.3 dBm for a 5-V supply) and phase noise (-84 dBc/Hz at 100 kHz). However, phase noise improvement of 32dB is observed by injection of a -30-dBm stable reference.

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7×300 µm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

W‐band transmitter module using gallium arsenide mmics

AbstractThis paper describes a high‐gain, single‐sideband, upconverting transmitter module developed for point‐to‐point telecommunications in the 83–87‐GHz band. Four gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs), which can readily be fabricated using standard commercial processes, are used in the multichip module. The transmitter exhibits a typical lower‐sideband up‐conversion gain of 20 dB and a typical output power of +5 dBm (at −1‐dB gain compression) between 83 and 87 GHz. Suppression of the higher sideband is greater than −15 dB. The two‐tone, 3rd‐order intercept point is typically +15 dBm for a tone spacing of 100 MHz at the lower sideband IF input. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 210–213, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20255

A compact LTCC-based Ku-band transmitter module

Presents design, implementation, and measurement of a three-dimensional (3-D)-deployed RF front-end system-on-package (SOP) in a standard multi-layer low temperature co-fired ceramic (LTCC) technology. A compact 14 GHz GaAs MESFET-based transmitter module integrated with an embedded bandpass filter was built on LTCC 951AT tapes. The up-converter MMIC integrated with a voltage controlled oscillator (VCO) exhibits a measured up-conversion gain of 15 dB and an IIP3 of 15 dBm, while the power amplifier (PA) MMIC shows a measured gain of 31 dB and a 1-dB compression output power of 26 dBm at 14 GHz. Both MMICs were integrated on a compact LTCC module where an embedded front-end band pass filter (BPF) with a measured insertion loss of 3 dB at 14.25 GHz was integrated. The transmitter module is compact in size (400 /spl times/ 310 /spl times/ 35.2 mil/sup 3/), however it demonstrated an overall up-conversion gain of 41 dB, and available data rate of 32 Mbps with adjacent channel power ratio (ACPR) of 42 dB. These results suggest the feasibility of building highly SOP integrated RF front ends for microwave and millimeter wave applications.

A low-power-consuming SOM for wireless communications

This paper presents theoretical and experimental results of a low-power-consuming hybrid push-pull self-oscillating mixer (SOM) circuit at the UHF frequency band. The frequency-stable SOM circuit is designed and fabricated using matched-pair Si bipolar junction transistors and high-Q resonators, where measured phase noise of this free-running voltage-controlled oscillator is -101.2 dBc/Hz at 100-kHz offset. A 20-dB up-conversion gain, a compression dynamic range (CDR) of 65 dB/spl middot/MHz, and a spurious-free dynamic range of 50 dB/spl middot/MHz/sup 2/3/ are also measured for the mixer portion of this SOM. Moreover, a down-conversion gain of /spl ap/-2 dB with a CDR of 100 dB/spl middot/MHz is also measured.

Low voltage performance of a microwave CMOS Gilbert cell mixer

This paper demonstrates the low voltage operation of a doubly balanced Gilbert mixer fabricated in a 0.8-/spl mu/m CMOS process and operating as both a down-converter and an up-converter. As a down-converter with an RF input of 1.9 GHz, the mixer has a single sideband noise figure as low as 7.8 dB and achieved down-conversion gain for supply voltages as low as 1.8 V. As an up-converter, the mixer demonstrates 10 dB of conversion gain at an RF frequency of 2.4 GHz with an applied local oscillator (LO) power of -7 dBm and LO-RF/LO-IF isolation of at least 30 dB. Up-conversion gain was achieved over a 5-GHz bandwidth and at supply voltages as low as 1.5 V. The mixer presented demonstrates the lowest single side band noise figure for a CMOS doubly balanced down-converting mixer and the highest frequency of operation for a mixer fabricated in CMOS technology to date.