High-power AlGaN∕GaN dual-gate high electron mobility transistor mixers on SiC substrates

Abstract

The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7×300 µm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.